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1. 发明申请

US20060245459A1 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US20060245459A1
公开(公告)日：2006-11-02
申请号：US11410048
申请日：2006-04-25
申请人： Toshikazu Onishi , Kazutoshi Onozawa , Tetsuzo Ueda
发明人： Toshikazu Onishi , Kazutoshi Onozawa , Tetsuzo Ueda
IPC分类号： H01S5/00
CPC分类号： H01S5/18358 , B82Y20/00 , H01S5/18311 , H01S5/2009 , H01S5/3211 , H01S5/34313 , H01S2301/176
摘要： A semiconductor laser device includes: an active layer formed on a substrate and including an AlGaAs layer; and an upper spacer layer formed at least one of above and below the active layer and including AlaGabIn1-a-bP (where 0≦a≦1, 0≦b≦1, and 0≦a+b≦1). The upper spacer layer has a composition enough to serve as a barrier layer against electrons injected into the active layer.
摘要翻译：半导体激光器件包括：形成在衬底上并包括AlGaAs层的有源层; 以及形成在有源层的上方和下方中的至少一个并且包括Al-1-ab P（其中第一个和第二个）的上隔离层 0 <= a <= 1，0 <= b <= 1，0 <= a + b <= 1）。上间隔层具有足以用作抵抗注入有源层的电子的阻挡层的组成。

2. 发明授权

US07391798B2 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US07391798B2
公开(公告)日：2008-06-24
申请号：US11410048
申请日：2006-04-25
申请人： Toshikazu Onishi , Kazutoshi Onozawa , Tetsuzo Ueda
发明人： Toshikazu Onishi , Kazutoshi Onozawa , Tetsuzo Ueda
IPC分类号： H01S5/00
CPC分类号： H01S5/18358 , B82Y20/00 , H01S5/18311 , H01S5/2009 , H01S5/3211 , H01S5/34313 , H01S2301/176
摘要： A semiconductor laser device includes: an active layer formed on a substrate and including an AlGaAs layer; and an upper spacer layer formed at least one of above and below the active layer and including AlaGabIn1-a-bP (where 0≦a≦1, 0≦b≦1, and 0≦a+b≦1). The upper spacer layer has a composition enough to serve as a barrier layer against electrons injected into the active layer.
摘要翻译：半导体激光器件包括：形成在衬底上并包括AlGaAs层的有源层; 以及形成在有源层的上方和下方中的至少一个并且包括Al-1-ab P（其中第一个和第二个）的上隔离层 0 <= a <= 1，0 <= b <= 1，0 <= a + b <= 1）。上间隔层具有足以用作抵抗注入有源层的电子的阻挡层的组成。

3. 发明申请

US20050152430A1 Laser device 失效
标题翻译：激光设备
公开(公告)号：US20050152430A1
公开(公告)日：2005-07-14
申请号：US11023419
申请日：2004-12-29
申请人： Toshikazu Onishi , Kazutoshi Onozawa , Shinji Yoshida , Daisuke Ueda
发明人： Toshikazu Onishi , Kazutoshi Onozawa , Shinji Yoshida , Daisuke Ueda
IPC分类号： H01S3/105 , G01N21/84 , H01S3/08 , H01S5/068 , H01S5/10 , H01S5/183
CPC分类号： H01S5/18394 , H01S5/1046 , H01S5/18319 , H01S5/1835
摘要： According to the present invention, a first p-side electrode 7A made of metal which is provided with regularly arranged holes 10 having a diameter smaller than a laser oscillation wavelength and a second p-side electrode 7B arranged around the periphery of the first p-type electrode 7A are used as a p-side mirror of a surface-emitting laser. Light in a resonator formed of a p-side electrode 7 and an n-type mirror 2 is first converted to a surface plasmon and then reconverted to the light by the p-side electrode 7A, and then emitted outside the resonator. This improves the light transmittance, thereby permitting use of metal which is considered to have inherently low light transmittance as a material for the p-side electrode 7. If the p-side electrode 7 is made of metal, operating voltage is reduced and heat dissipation improves, without causing a spike in a valence band, which occurs when a semiconductor layer is used. Further, due to the nonlinear effect of the mirror, optical feedback to the inside of the resonator is controlled, whereby a laser device with excellent noise characteristic is obtained.
摘要翻译：根据本发明，由金属制成的第一p侧电极7A，其具有规则排列的直径小于激光振荡波长的孔10，第二p侧电极7B布置在第一 p型电极7A用作表面发射激光器的p侧反射镜。首先将由p侧电极7和n型反射镜2形成的谐振器中的光转换为表面等离子体，然后通过p侧电极7A再次转换为光，然后发射到谐振器外部。这提高了透光率，从而允许使用被认为具有固有的低透光率的金属作为p侧电极7的材料。如果p侧电极7由金属制成，则工作电压降低，散热改善，而不会在使用半导体层时发生价带的尖峰。此外，由于反射镜的非线性效应，对谐振器内部的光反馈被控制，从而获得具有优异噪声特性的激光器件。

4. 发明授权

US07436874B2 Laser device 失效
标题翻译：激光设备
公开(公告)号：US07436874B2
公开(公告)日：2008-10-14
申请号：US11023419
申请日：2004-12-29
申请人： Toshikazu Onishi , Kazutoshi Onozawa , Shinji Yoshida , Daisuke Ueda
发明人： Toshikazu Onishi , Kazutoshi Onozawa , Shinji Yoshida , Daisuke Ueda
IPC分类号： H01S3/00 , H01S3/08
CPC分类号： H01S5/18394 , H01S5/1046 , H01S5/18319 , H01S5/1835
摘要： According to the present invention, a first p-side electrode 7A made of metal which is provided with regularly arranged holes 10 having a diameter smaller than a laser oscillation wavelength and a second p-side electrode 7B arranged around the periphery of the first p-type electrode 7A are used as a p-side mirror of a surface-emitting laser. Light in a resonator formed of a p-side electrode 7 and an n-type mirror 2 is first converted to a surface plasmon and then reconverted to the light by the p-side electrode 7A, and then emitted outside the resonator.
摘要翻译：根据本发明，由金属制成的第一p侧电极7A，其具有规则排列的直径小于激光振荡波长的孔10，第二p侧电极7B布置在第一 p型电极7A用作表面发射激光器的p侧反射镜。首先将由p侧电极7和n型反射镜2形成的谐振器中的光转换为表面等离子体，然后通过p侧电极7A再次转换为光，然后发射到谐振器外部。

5. 发明授权

US07538357B2 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US07538357B2
公开(公告)日：2009-05-26
申请号：US11195639
申请日：2005-08-03
申请人： Toshikazu Onishi , Tatsuya Tanigawa , Tetsuzo Ueda
发明人： Toshikazu Onishi , Tatsuya Tanigawa , Tetsuzo Ueda
IPC分类号： H01L29/207
CPC分类号： H01S5/18394 , H01L33/105 , H01L33/465 , H01L33/54 , H01S5/06226 , H01S5/18311 , H01S5/18319 , H01S5/18355 , H01S5/18358 , H01S5/18386
摘要： A semiconductor light emitting device includes: a cavity including a mesa formed over a substrate, the mesa having an active layer and being isolated by a recess formed around the mesa; and a resin layer with which the recess is filled. On the upper surface of the cavity, which is a light output surface through which light emitted from the active layer is output, a metal film having an opening whose diameter is smaller than the emission wavelength of the emitted light is formed.
摘要翻译：一种半导体发光器件包括：包括形成在衬底上的台面的空腔，所述台面具有有源层，并且通过围绕所述台面形成的凹部隔离; 以及填充有凹部的树脂层。在作为输出从有源层发射的光的光输出面的空腔的上表面形成具有直径小于发射光的发射波长的开口的金属膜。

6. 发明申请

US20070058982A1 Surface emitting laser, photodetector and optical communication system using the same 有权
标题翻译：表面发射激光，光电检测器和光通信系统使用相同
公开(公告)号：US20070058982A1
公开(公告)日：2007-03-15
申请号：US11519973
申请日：2006-09-13
申请人： Toshikazu Onishi , Tetsuzo Ueda , Daisuke Ueda
发明人： Toshikazu Onishi , Tetsuzo Ueda , Daisuke Ueda
IPC分类号： H04B10/00
CPC分类号： H01S5/18355 , B82Y20/00 , H01L31/035281 , H01L31/105 , H01S5/02284 , H01S5/0425 , H01S5/18311 , H01S5/18319 , H01S5/18344 , H01S5/18358 , H01S5/18386 , H01S5/3432 , H01S5/423 , Y02E10/50
摘要： A surface emitting laser includes a plurality of light-emitting portions for emitting laser light beams in different linearly polarized light directions. The light-emitting portions are formed on the substrate and located close to each other. The light-emitting portions include metal opening arrays through which light beams in different linearly polarized light directions respectively pass.
摘要翻译：表面发射激光器包括用于在不同的线偏振光方向上发射激光束的多个发光部分。发光部分形成在基板上并且彼此靠近。发光部分包括分别通过不同线偏振光方向的光束的金属开口阵列。

7. 发明授权

US07873090B2 Surface emitting laser, photodetector and optical communication system using the same 有权
标题翻译：表面发射激光，光电检测器和光通信系统使用相同
公开(公告)号：US07873090B2
公开(公告)日：2011-01-18
申请号：US11519973
申请日：2006-09-13
申请人： Toshikazu Onishi , Tetsuzo Ueda , Daisuke Ueda
发明人： Toshikazu Onishi , Tetsuzo Ueda , Daisuke Ueda
IPC分类号： H01S5/068 , H01S5/183 , H01S5/02 , H01S5/42
CPC分类号： H01S5/18355 , B82Y20/00 , H01L31/035281 , H01L31/105 , H01S5/02284 , H01S5/0425 , H01S5/18311 , H01S5/18319 , H01S5/18344 , H01S5/18358 , H01S5/18386 , H01S5/3432 , H01S5/423 , Y02E10/50
摘要： A surface emitting laser includes a plurality of light-emitting portions for emitting laser light beams in different linearly polarized light directions. The light-emitting portions are formed on the substrate and located close to each other. The light-emitting portions include metal opening arrays through which light beams in different linearly polarized light directions respectively pass.
摘要翻译：表面发射激光器包括用于在不同的线偏振光方向上发射激光束的多个发光部分。发光部分形成在基板上并且彼此靠近。发光部分包括分别通过不同线偏振光方向的光束的金属开口阵列。

8. 发明授权

US07459719B2 Superlattice optical semiconductor device where each barrier layer has high content of group III elements in center portion and low content near well layer 失效
标题翻译：超晶格光半导体器件，其中每个阻挡层在中心部分具有高含量的III族元素，在阱层附近具有低含量
公开(公告)号：US07459719B2
公开(公告)日：2008-12-02
申请号：US11304816
申请日：2005-12-16
申请人： Jun Shimizu , Tetsuzo Ueda , Toshikazu Onishi
发明人： Jun Shimizu , Tetsuzo Ueda , Toshikazu Onishi
IPC分类号： H01L29/06
CPC分类号： B82Y20/00 , H01S5/18311 , H01S5/3406 , H01S5/3407 , H01S5/34313 , H01S5/34373 , H01S2301/176
摘要： An optical semiconductor device includes an active layer having a quantum well structure including alternately stacked well layers and barrier layers with a larger band gap than the well layers. The band gap of each of the well layers and the barrier layers is constant, each well layer is uniformly provided with compression strain and each barrier layer is provided with large extension strain in a center portion thereof along the thickness direction and small extension strain in portions thereof in the vicinity of the well layers.
摘要翻译：光学半导体器件包括具有量子阱结构的有源层，其包括具有比阱层更大的带隙的交替堆叠的阱层和势垒层。每个阱层和阻挡层的带隙是恒定的，每个阱层均匀地具有压缩应变，并且每个阻挡层在其中心部分沿着厚度方向具有大的延伸应变，并且部分地具有小的延伸应变在阱层附近。

9. 发明申请

US20060056473A1 Semiconductor light emitting element and method for fabricating the same 审中-公开
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US20060056473A1
公开(公告)日：2006-03-16
申请号：US11195625
申请日：2005-08-03
申请人： Tatsuya Tanigawa , Toshikazu Onishi , Tetsuzo Ueda
发明人： Tatsuya Tanigawa , Toshikazu Onishi , Tetsuzo Ueda
IPC分类号： H01S5/00
CPC分类号： H01S5/18347 , H01S5/0425 , H01S5/18311 , H01S5/18358 , H01S5/2063 , H01S2301/166 , H01S2301/176
摘要： A surface emitting laser element includes a mesa structure of a semiconductor multilayer film formed to have a convex cross section. A first insulating film of an inorganic material is formed on a side surface of the mesa structure, and on the first insulating film, a resin layer is formed to fill a space surrounding the mesa structure. A second insulating film of an inorganic material is formed on the resin layer, and an upper contact electrode with an electrode opening exposing part of the top surface of the mesa structure is formed on the second insulating film and the mesa structure. With this construction, oxidation and alteration of the resin layer during fabrication of the element can be suppressed to bury the mesa structure with no gap created. Therefore, a semiconductor light-emitting element with high reliability can be provided.
摘要翻译：表面发射激光元件包括形成为具有凸形横截面的半导体多层膜的台面结构。无机材料的第一绝缘膜形成在台面结构的侧面上，在第一绝缘膜上形成树脂层以填充台面结构周围的空间。在树脂层上形成无机材料的第二绝缘膜，在第二绝缘膜和台面结构上形成具有露出台面结构的顶面部分的电极开口的上接触电极。利用这种结构，可以抑制元件制造过程中的树脂层的氧化和改变，以便不产生间隙而埋入台面结构。因此，可以提供高可靠性的半导体发光元件。

10. 发明申请

US20060038191A1 Semiconductor light emitting device 失效
公开(公告)号：US20060038191A1
公开(公告)日：2006-02-23
申请号：US11195639
申请日：2005-08-03
申请人： Toshikazu Onishi , Tatsuya Tanigawa , Tetsuzo Ueda
发明人： Toshikazu Onishi , Tatsuya Tanigawa , Tetsuzo Ueda
IPC分类号： H01L33/00
CPC分类号： H01S5/18394 , H01L33/105 , H01L33/465 , H01L33/54 , H01S5/06226 , H01S5/18311 , H01S5/18319 , H01S5/18355 , H01S5/18358 , H01S5/18386
摘要： A semiconductor light emitting device includes: a cavity including a mesa formed over a substrate, the mesa having an active layer and being isolated by a recess formed around the mesa; and a resin layer with which the recess is filled. On the upper surface of the cavity, which is a light output surface through which light emitted from the active layer is output, a metal film having an opening whose diameter is smaller than the emission wavelength of the emitted light is formed.

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