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1. 发明授权

US4417153A High frequency switching circuit 失效
标题翻译：高频开关电路
公开(公告)号：US4417153A
公开(公告)日：1983-11-22
申请号：US349094
申请日：1982-02-16
申请人： Toshihiro Onodera , Youichi Masuda , Akira Nakajima , Yoshio Takamura , Seiji Kajiwara , Shoichi Higo
发明人： Toshihiro Onodera , Youichi Masuda , Akira Nakajima , Yoshio Takamura , Seiji Kajiwara , Shoichi Higo
IPC分类号： H03K17/64 , H02M3/28 , H02M3/335 , H01H47/00
CPC分类号： H02M3/33538 , Y10T307/944
摘要： A single-ended switching circuit is constituted by a primary winding of a transformer, a switching circuit connected between the primary winding and a DC power supply and on-off operated with a predetermined cycle and also with a predetermined "on" period and a resonance capacitor connected in parallel with the primary winding. A magnetic amplifier, a rectifying element and a choke coil are connected in series between a secondary side circuit of the transformer and the load. The magnetic amplifier includes a saturable reactor which is held saturated during a half cycle of the voltage induced in a secondary winding of the transformer and remains unsaturated during the other half cycle of the voltage.
摘要翻译：单端开关电路由变压器的初级绕组，连接在初级绕组和直流电源之间的开关电路和以预定的周期运行的开关电路以及预定的“开”周期和共振电容器与初级绕组并联连接。磁放大器，整流元件和扼流线圈串联连接在变压器的次级侧电路和负载之间。磁放大器包括可饱和电抗器，其在变压器的次级绕组中感应的电压的半周期期间保持饱和，并且在电压的另一半周期期间保持不饱和。

2. 发明授权

US4401902A High frequency switching circuit 失效
标题翻译：高频开关电路
公开(公告)号：US4401902A
公开(公告)日：1983-08-30
申请号：US349091
申请日：1982-02-16
申请人： Toshihiro Onodera , Youichi Masuda , Akira Nakajima , Yoshio Takamura , Seiji Kajiwara , Shoichi Higo
发明人： Toshihiro Onodera , Youichi Masuda , Akira Nakajima , Yoshio Takamura , Seiji Kajiwara , Shoichi Higo
IPC分类号： H03K17/64 , H02M3/28 , H02M3/335 , H03K17/16 , H03K3/49 , H03K17/60 , H03K19/16
CPC分类号： H02M3/33538
摘要： A switching element is connected between a power supply and the primary winding of a transformer, and it is on-off controlled with a predetermined cycle and with a predetermined conducting period. The secondary winding of the transformer is connected to a parallel circuit of a filtering capacitor and a load via a rectifier diode and a choke coil. A closed circuit, to which the reflux current of the choke coil flows through the parallel circuit of the filtering capacitor and load, is formed by a reflux diode.
摘要翻译：开关元件连接在电源和变压器的初级绕组之间，并以预定的周期和预定的导通周期进行开关控制。变压器的次级绕组通过整流二极管和扼流线圈连接到滤波电容器和负载的并联电路。扼流线圈的回流通过滤波电容器的并联电路和负载的闭合电路由回流二极管形成。

3. 发明授权

US4399376A High frequency switching circuit 失效
标题翻译：高频开关电路
公开(公告)号：US4399376A
公开(公告)日：1983-08-16
申请号：US349093
申请日：1982-02-16
申请人： Toshihiro Onodera , Koichiro Inomata , Michio Hasegawa , Yoshio Takamura , Seiji Kajiwara , Shoichi Higo
发明人： Toshihiro Onodera , Koichiro Inomata , Michio Hasegawa , Yoshio Takamura , Seiji Kajiwara , Shoichi Higo
IPC分类号： H03K17/64 , H02M3/28 , H02M3/335 , H03K3/49 , H03K17/60 , H03K19/16
CPC分类号： H02M3/33538
摘要： A switching element, a transformer having a primary winding connected through said switching element to a DC power supply and a resonance capacitor connected in parallel with the primary winding of said transformer constitute a single-ended switching circuit. A magnetic amplifier is connected between the secondary side circuit of the transformer of the single-ended switching circuit and a rectifying/smoothing circuit, thus forming a high frequency switching circuit.
摘要翻译：开关元件，具有通过所述开关元件连接到DC电源的初级绕组的变压器和与所述变压器的初级绕组并联连接的谐振电容器构成单端开关电路。在单端开关电路的变压器的次级侧电路和整流/平滑电路之间连接有磁放大器，从而形成高频开关电路。

4. 发明授权

US08309469B2 Method of fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08309469B2
公开(公告)日：2012-11-13
申请号：US12372191
申请日：2009-02-17
申请人： Seiji Kajiwara
发明人： Seiji Kajiwara
IPC分类号： H01L21/461
CPC分类号： H01L21/823456 , H01L27/11521 , H01L27/11526 , H01L27/11543
摘要： A method of fabricating a semiconductor device includes forming core material patterns comprising first films separated from another above a substrate; modifying surfaces of core material patterns so a second film is formed, selectively etchable, with first films internally remaining, the second film not covering a base layer of core material patterns between core material patterns; covering an upper surface and sides of the second film and forming a third film on the substrate; etching back the third film to expose an upper surface of the second film and the base layer of core material patterns between the patterns, causing the third film to selectively remain; removing the second film more rapidly than the first and third films; and patterning the base layer with the first and third films remaining on the base layer serving as a mask after the second film has been removed, forming a base layer pattern.
摘要翻译：制造半导体器件的方法包括：形成芯材图案，其包括在衬底上方与另一膜分离的第一膜; 修改芯材图案的表面，从而形成可选择性蚀刻的第二膜，其中内部保留有第一膜，第二膜不覆盖芯材图案之间的芯材图案的基层; 覆盖第二膜的上表面和侧面并在基板上形成第三膜; 蚀刻第三膜以暴露第二膜的上表面和芯图案的基层之间的图案之间的图案，导致第三膜选择性地保留; 比第一和第三膜更快地去除第二膜; 以及在去除所述第二膜之后，将所述基底层图案化成残留在所述基底层上的所述第一和第三膜作为掩模，形成基底图案。

5. 发明授权

US4637489A Electroacoustic transducer 失效
标题翻译：电声换能器
公开(公告)号：US4637489A
公开(公告)日：1987-01-20
申请号：US772535
申请日：1985-09-04
申请人： Masaya Iwanaka , Seiji Kajiwara
发明人： Masaya Iwanaka , Seiji Kajiwara
IPC分类号： H04R1/08 , H04R1/22 , H04R1/28 , H04R19/04 , G10K13/00
CPC分类号： H04R1/22
摘要： An electroacoustic transducer has a front air chamber in front of the diaphragm that vibrates upon receiving sound waves or produces sound waves upon vibration and a back air chamber provided in the rear of the diaphragm. The electroacoustic transducer of the present invention further includes an auxiliary air chamber that is provided in the rear of the back air chamber that is coupled thereto by through holes. The auxiliary air chamber is divided into at least two smaller air chambers which are coupled to each other by a small orifice.
摘要翻译：电声换能器具有在隔膜前面的前空气室，其在接收到声波时振动或在振动时产生声波，以及设置在隔膜后部的后气室。本发明的电声换能器还包括辅助空气室，其设置在通过通孔与其连接的后空气室的后部。辅助空气室被分成至少两个较小的空气室，它们通过小孔彼此连接。

6. 发明申请

US20090298274A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20090298274A1
公开(公告)日：2009-12-03
申请号：US12372191
申请日：2009-02-17
申请人： Seiji Kajiwara
发明人： Seiji Kajiwara
IPC分类号： H01L21/28 , H01L21/77
CPC分类号： H01L21/823456 , H01L27/11521 , H01L27/11526 , H01L27/11543
摘要： A method of fabricating a semiconductor device includes forming core material patterns comprising first films separated from each other above a substrate, modifying surfaces of the core material patterns so that a second film is formed so as to be selectively etchable with the first films internally remaining, covering an upper surface and sides of the second film and forming a third film on the substrate, etching back the third film so that an upper surface of the second film is exposed and a base layer of the core material patterns is exposed between the patterns, and causing the third film to selectively remain, removing the second film more rapidly than the first and third films, and patterning the base layer with the first and third films remaining on the base layer serving as a mask after the second film has been removed, thereby forming a base layer pattern.
摘要翻译：一种制造半导体器件的方法包括形成芯材图案，其包括在基板上方彼此分离的第一膜，修改芯材图案的表面，使得形成第二膜以便可以内部保留第一膜的可选择性蚀刻，覆盖第二膜的上表面和侧面并在基板上形成第三膜，蚀刻第三膜，使得第二膜的上表面露出，芯材图案的基层在图案之间露出，并且使所述第三膜选择性地保留，并且比所述第一和第三膜更快地除去所述第二膜，并且在所述第二膜被去除之后，使所述基底层上残留有作为掩模的第一膜和第三膜图案化，从而形成基层图案。

7. 发明授权

US08551875B2 Pattern forming method 有权
标题翻译：图案形成方法
公开(公告)号：US08551875B2
公开(公告)日：2013-10-08
申请号：US13364624
申请日：2012-02-02
申请人： Seiji Kajiwara
发明人： Seiji Kajiwara
IPC分类号： H01L21/3205
CPC分类号： H01L21/28273 , H01L21/0337 , H01L21/0338 , H01L21/32139 , H01L27/11519 , H01L27/11524
摘要： According to one embodiment, an opening pattern is formed in the core film above a processing target, and a mask film is conformably formed above the processing target. Next, etch-back of the mask film is performed so that the mask film remains on a side surface of the core film. After that, line-and-space shaped core patterns, made of the core film, is formed in an area other than an area forming the opening pattern. Next, sidewall patterns are formed around the core patterns, and the core patterns are removed. Next, the processing target is patterned by using the mask film and the sidewall patterns.
摘要翻译：根据一个实施例，在加工对象上方的芯膜中形成开口图案，并且掩模膜顺应地形成在加工对象上方。接下来，进行掩模膜的回蚀，使得掩模膜保留在芯膜的侧表面上。之后，形成由芯膜制成的线空间形状的芯图案，形成在除了形成开口图案的区域之外的区域中。接下来，围绕芯图案形成侧壁图案，并且去除芯图案。接下来，通过使用掩模膜和侧壁图案对处理对象进行图案化。

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