专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20070049237A1 Semiconductor integrated circuit device and high frequency power amplifier module 有权
标题翻译：半导体集成电路器件和高频功率放大器模块
公开(公告)号：US20070049237A1
公开(公告)日：2007-03-01
申请号：US11511300
申请日：2006-08-29
申请人： Toshihiro Miura , Hitoshi Akamine , Yasushi Shigeno , Akishige Nakajima , Masahiro Tsuchiya
发明人： Toshihiro Miura , Hitoshi Akamine , Yasushi Shigeno , Akishige Nakajima , Masahiro Tsuchiya
IPC分类号： H04B1/44 , H04B1/28
CPC分类号： H04B1/48
摘要： Switching characteristics in an SPDT switch are improved to reduce the rise delay in a low power slot following after a high power slot. Control terminals of an SPDT switch are respectively provided with backflow prevention circuits. The backflow prevention circuit is configured to have two transistors and a diode. In a transmission mode, for example, when a time slot where a high power passes through transistors is followed by a time slot where a low power passes through, the electric charges accumulated in the gates of the transistors are blocked. In the case where the transistors are in the OFF state, the electric charges accumulated in the gates of the transistors are immediately discharged to allow the transistors to be completely turned OFF.
摘要翻译： SPDT开关中的开关特性得到改善，可以降低高功率插槽后的低功率插槽的上升延时。 SPDT开关的控制端子分别设有防回流电路。防回流电路被配置为具有两个晶体管和二极管。在传输模式中，例如，当高功率通过晶体管的时隙之后是低功率通过的时隙时，积聚在晶体管的栅极中的电荷被阻断。在晶体管处于截止状态的情况下，立即放电晶体管的栅极中累积的电荷，使晶体管完全截止。

2. 发明授权

US07650133B2 Semiconductor integrated circuit device and high frequency power amplifier module 有权
标题翻译：半导体集成电路器件和高频功率放大器模块
公开(公告)号：US07650133B2
公开(公告)日：2010-01-19
申请号：US11511300
申请日：2006-08-29
申请人： Toshihiro Miura , Hitoshi Akamine , Yasushi Shigeno , Akishige Nakajima , Masahiro Tsuchiya
发明人： Toshihiro Miura , Hitoshi Akamine , Yasushi Shigeno , Akishige Nakajima , Masahiro Tsuchiya
IPC分类号： H04B1/16
CPC分类号： H04B1/48
摘要： Switching characteristics in an SPDT switch are improved to reduce the rise delay in a low power slot following after a high power slot. Control terminals of an SPDT switch are respectively provided with backflow prevention circuits. The backflow prevention circuit is configured to have two transistors and a diode. In a transmission mode, for example, when a time slot where a high power passes through transistors is followed by a time slot where a low power passes through, the electric charges accumulated in the gates of the transistors are blocked. In the case where the transistors are in the OFF state, the electric charges accumulated in the gates of the transistors are immediately discharged to allow the transistors to be completely turned OFF.
摘要翻译： SPDT开关中的开关特性得到改善，可以降低高功率插槽后的低功率插槽的上升延时。 SPDT开关的控制端子分别设有防回流电路。防回流电路被配置为具有两个晶体管和二极管。在传输模式中，例如，当高功率通过晶体管的时隙之后是低功率通过的时隙时，积聚在晶体管的栅极中的电荷被阻断。在晶体管处于截止状态的情况下，立即放电晶体管的栅极中累积的电荷，使晶体管完全截止。

3. 发明授权

US08115234B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08115234B2
公开(公告)日：2012-02-14
申请号：US12564939
申请日：2009-09-23
申请人： Akishige Nakajima , Yasushi Shigeno , Hitoshi Akamine , Tsutomu Kobori , Izumi Arai , Kazuto Tajima , Tomoyuki Ishikawa , Jyun Funaki
发明人： Akishige Nakajima , Yasushi Shigeno , Hitoshi Akamine , Tsutomu Kobori , Izumi Arai , Kazuto Tajima , Tomoyuki Ishikawa , Jyun Funaki
IPC分类号： H01L29/778 , H01L29/80
CPC分类号： H01L29/7783 , H01L27/0207 , H01L29/41758 , H01L29/42316 , H01L29/4238 , H01L29/7833 , H04B1/48 , H04B7/0831
摘要： There is provided a technique for reducing the occurrence of higher harmonics which occur from a field effect transistor, particularly a field effect transistor configuring a switching element of an antenna switch. In a transistor having a meander structure, the gate width of a partial transistor closest to a gate input side is increased. More specifically, a comb-like electrode is made longer than the other comb-like electrodes. In other words, a finger length is made greater than any other finger length. In particular, the comb-like electrode has the greatest length in all the comb-like electrodes.
摘要翻译：提供了一种用于减少由场效应晶体管，特别是构成天线开关的开关元件的场效应晶体管发生的高次谐波的发生的技术。在具有曲折结构的晶体管中，最靠近栅极输入侧的部分晶体管的栅极宽度增加。更具体地，使梳状电极比其他梳状电极长。换句话说，使手指长度大于任何其他手指长度。特别地，梳状电极在所有梳状电极中具有最大的长度。

4. 发明申请

US20060066398A1 High frequency power amplifier circuit and electric component for high frequency power amplifier 有权
标题翻译：高频功率放大器电路和高频功率放大器电气元件
公开(公告)号：US20060066398A1
公开(公告)日：2006-03-30
申请号：US11227109
申请日：2005-09-16
申请人： Hitoshi Akamine , Masahiro Tsuchiya , Kyoichi Takahashi , Kazuhiro Koshio
发明人： Hitoshi Akamine , Masahiro Tsuchiya , Kyoichi Takahashi , Kazuhiro Koshio
IPC分类号： H03G3/20
CPC分类号： H03F3/191 , H03F1/30 , H03F1/32 , H03G1/007 , H03G3/004 , H03G3/3047 , H03G2201/103 , H03G2201/206 , H03G2201/307 , H03G2201/40
摘要： In a high frequency power amplifier circuit in which bias voltages are applied to the transistors for amplification by current mirroring, this invention enables preventing waveform distortion near the peak output power level by allowing sufficient idle currents to flow through the transistors for amplification, while enhancing the power efficiency in a low output power region. The power amplifier includes a detection circuit comprising a transistor for detection which receives the AC component of an input signal to the last-stage transistor for amplification at its control terminal, a current mirror circuit which mirrors current flowing through that transistor, and a current-voltage conversion means which converts current flowing in the slave side of the current mirror circuit into a voltage. In the detection circuit, a voltage from a bias circuit for generating the bias voltages for the transistors for amplification is applied to the control terminal of the transistor for detection and output of the detection circuit is applied to the control terminal of the last-stage transistor for amplification.
摘要翻译：在通过电流镜像将偏置电压施加到晶体管以进行放大的高频功率放大器电路中，本发明能够通过允许足够的空闲电流流过晶体管进行放大，从而防止峰值输出功率电平附近的波形失真，同时增强低输出功率区域的功率效率。功率放大器包括检测电路，该检测电路包括用于检测的晶体管，其将用于在其控制端子处放大的最后级晶体管的输入信号的AC分量接收;反射电流流过该晶体管的电流镜电路，电压转换装置，其将在电流镜电路的从侧中流动的电流转换成电压。在检测电路中，用于产生用于放大的晶体管的偏置电压的偏置电路的电压被施加到用于检测的晶体管的控制端，并且检测电路的输出被施加到最后级晶体管的控制端用于扩增。

5. 发明授权

US06919762B2 High frequency power amplifier electric parts and radio telecommunication system 失效
标题翻译：高频功率放大器电器零件和无线电通信系统
公开(公告)号：US06919762B2
公开(公告)日：2005-07-19
申请号：US10722532
申请日：2003-11-28
申请人： Hitoshi Akamine , Kyoichi Takahashi , Masahiro Tsuchiya
发明人： Hitoshi Akamine , Kyoichi Takahashi , Masahiro Tsuchiya
IPC分类号： H03F3/68 , H03F1/02 , H03F1/32 , H03F3/24 , H03G3/30 , H03G5/16
CPC分类号： H03G3/3047 , H03F1/0272 , H03F2200/294 , H03F2200/372
摘要： The present invention provides a high frequency power amplifier of a multi-stage configuration in which a plurality of transistors for power amplification are cascaded, with reduced distortion of a signal in a region where an output power level is low and improved power efficiency. In a high frequency power amplifier electric part in which a plurality of transistors for power amplification are cascaded, a transistor for output level detection is provided whose gate terminal receives a gate input of a transistor for power amplification in the final stage via a resistive element of which resistance value is 100 Ω or less. Current detected by the transistor is converted to voltage. The voltage is compared with output control voltage by an error amplifier. Voltage according to the potential difference is applied to the gate terminals of the transistors for power amplification in the amplification stages to thereby pass idle current.
摘要翻译：本发明提供一种多级配置的高频功率放大器，其中用于功率放大的多个晶体管级联，降低输出功率电平低的区域中的信号失真并提高功率效率。在用于功率放大的多个晶体管级联的高频功率放大器电气部件中，提供用于输出电平检测的晶体管，其栅极端子经由电阻元件的电阻元件在最终级中接收用于功率放大的晶体管的栅极输入该电阻值为100Ω以下。由晶体管检测的电流转换为电压。通过误差放大器将电压与输出控制电压进行比较。根据电位差的电压被施加到放大级中用于功率放大的晶体管的栅极端子，从而使空闲电流通过。

6. 发明授权

US07395036B2 Semiconductor integrated circuit for high frequency power amplifier and electric components with the semiconductor integrated circuit 有权
标题翻译：半导体集成电路用于高频功率放大器和电子元件与半导体集成电路
公开(公告)号：US07395036B2
公开(公告)日：2008-07-01
申请号：US11216061
申请日：2005-09-01
申请人： Hitoshi Akamine , Masahiro Tsuchiya , Kyoichi Takahashi , Kazuhiro Koshio
发明人： Hitoshi Akamine , Masahiro Tsuchiya , Kyoichi Takahashi , Kazuhiro Koshio
IPC分类号： H01Q11/12
CPC分类号： H03G3/3047 , H03G3/3042
摘要： In a high frequency power amplifier circuit in which bias voltages are applied to the transistors for amplification by current mirroring, The power amplifier includes a detection circuit including a transistor for detection which receives the AC component of an input signal to the last-stage transistor for amplification at its control terminal, a current mirror circuit which mirrors current flowing through that transistor, and a current-voltage converter which converts current flowing in the slave side of the current mirror circuit into a voltage. In the detection circuit, a voltage from a bias circuit for generating the bias voltages for the transistors for amplification is applied to the control terminal of the transistor for detections, and output of the detection circuit is applied to the control terminal of the last-stage transistor for amplification.
摘要翻译：在通过电流镜像将偏置电压施加到晶体管以进行放大的高频功率放大器电路中，功率放大器包括检测电路，该检测电路包括用于检测的晶体管，该晶体管接收到最后级晶体管的输入信号的AC分量，在其控制端子放大电流镜电路，其反射流过该晶体管的电流;以及电流 - 电压转换器，其将在电流镜电路的从侧中流动的电流转换为电压。在检测电路中，用于产生用于放大的晶体管的偏置电压的偏置电路的电压被施加到用于检测的晶体管的控制端，并且检测电路的输出被施加到最后级的控制端晶体管用于放大。

7. 发明授权

US07271662B2 High frequency power amplifier circuit and electric component for high frequency power amplifier 有权
标题翻译：高频功率放大器电路和高频功率放大器电气元件
公开(公告)号：US07271662B2
公开(公告)日：2007-09-18
申请号：US11227109
申请日：2005-09-16
申请人： Hitoshi Akamine , Masahiro Tsuchiya , Kyoichi Takahashi , Kazuhiro Koshio
发明人： Hitoshi Akamine , Masahiro Tsuchiya , Kyoichi Takahashi , Kazuhiro Koshio
IPC分类号： H03G5/16 , H03F3/68
CPC分类号： H03F3/191 , H03F1/30 , H03F1/32 , H03G1/007 , H03G3/004 , H03G3/3047 , H03G2201/103 , H03G2201/206 , H03G2201/307 , H03G2201/40
摘要： In a high frequency power amplifier circuit in which bias voltages are applied to the transistors for amplification by current mirroring, this invention enables preventing waveform distortion near the peak output power level by allowing sufficient idle currents to flow through the transistors for amplification, while enhancing the power efficiency in a low output power region. The power amplifier includes a detection circuit comprising a transistor for detection which receives the AC component of an input signal to the last-stage transistor for amplification at its control terminal, a current mirror circuit which mirrors current flowing through that transistor, and a current-voltage conversion means which converts current flowing in the slave side of the current mirror circuit into a voltage. In the detection circuit, a voltage from a bias circuit for generating the bias voltages for the transistors for amplification is applied to the control terminal of the transistor for detection and output of the detection circuit is applied to the control terminal of the last-stage transistor for amplification.
摘要翻译：在通过电流镜像将偏置电压施加到晶体管以进行放大的高频功率放大器电路中，本发明能够通过允许足够的空闲电流流过晶体管进行放大，从而防止峰值输出功率电平附近的波形失真，同时增强低输出功率区域的功率效率。功率放大器包括检测电路，该检测电路包括用于检测的晶体管，其将用于在其控制端子处放大的最后级晶体管的输入信号的AC分量接收;反射电流流过该晶体管的电流镜电路，电压转换装置，其将在电流镜电路的从侧中流动的电流转换成电压。在检测电路中，用于产生用于放大的晶体管的偏置电压的偏置电路的电压被施加到用于检测的晶体管的控制端，并且检测电路的输出被施加到最后级晶体管的控制端用于扩增。

8. 发明申请

US20060066404A1 Semiconductor integrated circuit for high frequency power amplifier and electric components with the semiconductor integrated circuit 有权
标题翻译：半导体集成电路用于高频功率放大器和电子元件与半导体集成电路
公开(公告)号：US20060066404A1
公开(公告)日：2006-03-30
申请号：US11216061
申请日：2005-09-01
申请人： Hitoshi Akamine , Masahiro Tsuchiya , Kyoichi Takahashi , Kazuhiro Koshio
发明人： Hitoshi Akamine , Masahiro Tsuchiya , Kyoichi Takahashi , Kazuhiro Koshio
IPC分类号： H03G3/10
CPC分类号： H03G3/3047 , H03G3/3042
摘要： In a high frequency power amplifier circuit in which bias voltages are applied to the transistors for amplification by current mirroring, The power amplifier includes a detection circuit including a transistor for detection which receives the AC component of an input signal to the last-stage transistor for amplification at its control terminal, a current mirror circuit which mirrors current flowing through that transistor, and a current-voltage converter which converts current flowing in the slave side of the current mirror circuit into a voltage. In the detection circuit, a voltage from a bias circuit for generating the bias voltages for the transistors for amplification is applied to the control terminal of the transistor for detection, and output of the detection circuit is applied to the control terminal of the last-stage transistor for amplification.
摘要翻译：在通过电流镜像将偏置电压施加到晶体管以进行放大的高频功率放大器电路中，功率放大器包括检测电路，该检测电路包括用于检测的晶体管，该晶体管接收到最后级晶体管的输入信号的AC分量，在其控制端子放大电流镜电路，其反射流过该晶体管的电流;以及电流 - 电压转换器，其将在电流镜电路的从侧中流动的电流转换为电压。在检测电路中，将用于产生用于放大的晶体管的偏置电压的偏置电路的电压施加到用于检测的晶体管的控制端，并且将检测电路的输出施加到最后级的控制端晶体管用于放大。

9. 发明授权

US07439622B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07439622B2
公开(公告)日：2008-10-21
申请号：US11581587
申请日：2006-10-17
申请人： Hitoshi Akamine , Masashi Suzuki , Masao Yamane , Tetsuaki Adachi
发明人： Hitoshi Akamine , Masashi Suzuki , Masao Yamane , Tetsuaki Adachi
IPC分类号： H01L23/48 , H01L23/52 , H01R11/00
CPC分类号： H01L27/0207 , H01L23/4824 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/16 , H01L27/088 , H01L29/0696 , H01L29/1083 , H01L29/4175 , H01L29/41758 , H01L29/4238 , H01L29/7835 , H01L2223/6644 , H01L2223/6688 , H01L2224/05599 , H01L2224/45099 , H01L2224/49111 , H01L2224/85399 , H01L2924/00014 , H01L2924/13091 , H01L2924/19041 , H01L2924/19105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H03F3/189 , H03F3/211 , H03F3/601 , H03F3/68 , H03F3/72 , H03F2200/294 , H03F2200/372 , H01L2224/45015 , H01L2924/207
摘要： The present invention provides a semiconductor device comprising a semiconductor substrate, and transistors formed on the semiconductor substrate, wherein control electrode terminals constituting external electrode terminals of the transistors, and first electrode terminals which transmit output signals, are provided on a main surface of the semiconductor substrate, wherein the control electrode terminals are provided at least one, and a plurality of the first electrode terminals are arranged on one side and a plurality of the first electrode terminals are arranged on the other side with the control electrode terminals being interposed therebetween, wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on one side of the control electrode terminals constitute a first transistor portion, and wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on the other side of the control electrode terminals constitute a second transistor portion. The semiconductor device is quadrangular.
摘要翻译：本发明提供一种半导体器件，包括半导体衬底和形成在半导体衬底上的晶体管，其中构成晶体管的外部电极端子的控制电极端子和传输输出信号的第一电极端子设置在半导体的主表面上基板，其中控制电极端子设置为至少一个，并且多个第一电极端子布置在一侧，并且多个第一电极端子布置在另一侧，其中控制电极端子插入其间，其中包括控制电极端子和位于控制电极端子一侧的多个第一电极端子的部分构成第一晶体管部分，并且其中包括控制电极端子和位于第一晶体管部分上的多个第一电极端子的部分另一边的控制电极端子构成第二晶体管部分。半导体器件是四边形。

10. 发明授权

US07145394B2 High frequency power amplifier module, and wireless communication system 失效
标题翻译：高频功率放大器模块和无线通信系统
公开(公告)号：US07145394B2
公开(公告)日：2006-12-05
申请号：US11098454
申请日：2005-04-05
申请人： Masahito Numanami , Hitoshi Akamine , Tsuyoshi Shibuya , Tetsuaki Adachi , Masatoshi Morikawa , Yasuhiro Nunogawa
发明人： Masahito Numanami , Hitoshi Akamine , Tsuyoshi Shibuya , Tetsuaki Adachi , Masatoshi Morikawa , Yasuhiro Nunogawa
IPC分类号： H03F3/16
CPC分类号： H01L29/7835 , H01L29/1045 , H01L29/4175 , H01L29/7831 , H01L2924/0002 , H03F1/02 , H03F1/223 , H03F3/24 , H03F3/601 , H03F3/72 , H03F2203/7206 , H03G1/007 , H04B2001/045 , H01L2924/00
摘要： A high frequency power amplifier module of a multistage amplifier construction comprising: an input terminal; an output terminal; a control terminal; and a mode switching terminal. The first amplification stage includes a dual gate FET, and a bias voltage according to a signal is applied to the first gate and the second gate of the dual gate FET from the control terminal and the mode switching terminal, and a radio signal from the input terminal is applied to the second gate such as the source of the dual gate FET. In dependence upon the signal from the mode switching terminal, the mode of the high frequency power amplifier module is for the GSM (i.e., for a non-linear amplifying action) and for the EDGE (for a linear amplifying action).
摘要翻译：一种多级放大器结构的高频功率放大器模块，包括：输入端; 输出端子; 一个控制终端; 和模式切换终端。第一放大级包括双栅极FET，并且根据信号的偏置电压从控制端子和模式切换端子施加到双栅极FET的第一栅极和第二栅极，以及来自输入端的无线电信号端子施加到第二栅极，例如双栅极FET的源极。根据来自模式切换端子的信号，高频功率放大器模块的模式用于GSM（即，用于非线性放大动作）和EDGE（用于线性放大动作）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式