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    • 6. 发明授权
    • Semiconductor device
    • 半导体器件
    • US06747297B2
    • 2004-06-08
    • US10219298
    • 2002-08-16
    • Mitsuru Tanabe
    • Mitsuru Tanabe
    • H01L2348
    • H01L29/7784
    • An undoped In0.52Al0.48As buffer layer (thickness: 500 nm), an undoped In0.53Ga0.47As channel layer (thickness: 30 nm), an n-type delta doped layer for shortening the distance between the channel layer and a gate electrode and attaining a desired carrier density, an undoped In0.52Al0.48As Schottky layer, and an n-type In0.53Ga0.47As cap layer doped with Si (thickness: 50 nm) are formed in this order on the principal surface of an Fe-doped InP semi-insulating substrate. An n-type GaAs protective layer doped with Si (thickness: 7.5 nm) is formed between the cap layer and source/drain electrodes for protecting the cap layer.
    • 未掺杂的In0.52Al0.48As缓冲层(厚度:500nm),未掺杂的In0.53Ga0.47As沟道层(厚度:30nm),n型δ掺杂层,用于缩短沟道层和栅极之间的距离 电极并获得所需的载流子密度,掺杂有Si(厚度:50nm)的未掺杂的In0.52Al0.48As肖特基层和n型In 0.53 Ga 0.47 As覆盖层依次形成在 Fe掺杂InP半绝缘基板。 在盖层和源极/漏极之间形成掺杂有Si(厚度:7.5nm)的n型GaAs保护层,用于保护盖层。
    • 7. 发明授权
    • Splitter
    • 分流器
    • US09100105B2
    • 2015-08-04
    • US14237591
    • 2012-08-10
    • Yasuko YamamotoMitsuru TanabeMitsuru MaedaKenji Kuniyoshi
    • Yasuko YamamotoMitsuru TanabeMitsuru MaedaKenji Kuniyoshi
    • H04B3/00H04L25/00H04B3/56H04B3/54
    • H04B3/56H04B3/54H04B2203/5425H04B2203/5483H04B2203/5491
    • A splitter includes, in parallel between trunk terminals and branch terminals, a signal branching circuit that blocks distributed power and passes a PLC communication signal and a power branching circuit that blocks the communication signal and passes the distributed power. In the signal branching circuit, impedance viewed from the branch terminal side is matched with characteristic impedance of a power line and impedance viewed from the trunk terminal side is higher than impedance viewed from the branch terminal side, in the frequency band of the communication signal. In the power branching circuit, input/output impedance is set to be sufficiently higher than the impedance of the signal branching circuit viewed from the trunk terminal side, in the frequency band of the communication signal.
    • 分路器在中继线端子和分支端子之间并联包括阻塞分布式电力并通过PLC通信信号的信号分支电路和阻塞通信信号并通过分布式电力的功率分支电路。 在信号分支电路中,在通信信号的频带中,从分支端子侧观察的阻抗与电力线的特性阻抗匹配,并且从主体侧端子侧观察的阻抗高于从分支端子侧观察到的阻抗。 在功率分支电路中,在通信信号的频带中,输入/输出阻抗被设定为足够高于从主体端子侧观察的信号分支电路的阻抗。
    • 9. 发明授权
    • Phase shifting device
    • 相移装置
    • US07282979B2
    • 2007-10-16
    • US11226295
    • 2005-09-15
    • Takatoshi TanakaMitsuru TanabeShigeru Kataoka
    • Takatoshi TanakaMitsuru TanabeShigeru Kataoka
    • H03H11/16
    • H03L7/0812H03H7/20H03H11/20H03K2005/00286
    • A phase shifting device includes a signal source; a variable phase shifter; first and second doubling circuits; and a 90-degree phase comparator. An output from the signal source is connected to an input of the variable phase shifter and to an input of the second doubling circuit, an output from the variable phase shifter is connected to an input of the first doubling circuit, an output from the first doubling circuit serves as a first output signal, and an output from the second doubling circuit serves as a second output signal. The first output signal and the second output signal are inputted to the 90-degree phase comparator. The amount of phase shift rotation of the variable phase shifter is changed by a phase shift control signal outputted from the 90-degree phase comparator. By this, an exact 90-degree phase shift is obtained.
    • 相移装置包括信号源; 可变移相器 第一和第二加倍电路; 和90度相位比较器。 来自信号源的输出连接到可变移相器的输入端和第二倍频电路的输入端,可变移相器的输出端连接到第一倍频电路的输入端,第一倍频输出端 电路用作第一输出信号,并且来自第二倍频电路的输出用作第二输出信号。 第一输出信号和第二输出信号被输入到90度相位比较器。 可变移相器的相移旋转量由从90度相位比较器输出的相移控制信号改变。 由此可以得到精确的90度相移。