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1. 发明专利

JP2008284556A Structure welding method 有权
标题翻译：结构焊接方法
公开(公告)号：JP2008284556A
公开(公告)日：2008-11-27
申请号：JP2007128976
申请日：2007-05-15
申请人： Toshiba Corp , 株式会社東芝
发明人： SUMIYA RIE , SAITO TOSHIYUKI , KUBO TATSUYA , ASANO MASAYUKI , OBATA MINORU , KIKUCHI MASAAKI , ITO KIICHI , HAYASHI TAKAHIRO
IPC分类号： B23K31/00 , B23K9/00 , B23K9/028 , B23K9/095 , B23K9/23
摘要： PROBLEM TO BE SOLVED: To provide a structure welding method which is performed by calculating through an analytical method, a welding condition causing residual stress in a proximity to a weld zone to be compressive residual stress, before actual welding is implemented.
SOLUTION: A structure is welded by the structure welding method which comprises: a step S1 of setting a plurality of parts to be welded that are less than the number of the total welding passes, and performing a residual stress analysis from analytical conditions for which a thermal effect during the welding of each part to be welded is simulated; a step S2 of selecting the optimum analytical condition in each part to be welded from the result of the residual stress analysis, and developing the selected analytical condition to the analytical condition of the welding pass around each part to be welded; a step S3 of performing total pass analysis through the residual stress analysis based on the developed analytical condition; and a step S4 of specifying the analytical condition in which the result of the residual stress analysis obtained from the total pass analysis causes the residual stress produced in the assessment part near the weld zone of the structure to be compressive residual stress, and setting this analytical condition as the actual welding condition.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供通过分析方法计算进行的结构焊接方法，在实施焊接之前，使得在焊接区附近使残余应力的焊接条件成为压缩残余应力。解决方案：通过结构焊接方法对结构进行焊接，该方法包括：将要焊接的多个部件设置为小于总焊接次数的步骤S1，并且从分析条件进行残余应力分析模拟焊接每个焊接部件的焊接过程中的热效应; 从剩余应力分析的结果中选择要焊接的每个部件中的最佳分析条件的步骤S2，以及将所选择的分析条件发展成围绕每个待焊接部分的焊接通过的分析条件; 通过基于所开发的分析条件的残余应力分析进行总通过分析的步骤S3; 以及规定从全通分析得到的残余应力分析的结果的分析条件的步骤S4导致在结构的焊接区附近的评价部产生的残余应力为压缩残余应力，并且将该分析条件作为实际焊接条件。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2008036682A Method of repairing nuclear reactor structure 审中-公开
标题翻译：修复核反应堆结构的方法
公开(公告)号：JP2008036682A
公开(公告)日：2008-02-21
申请号：JP2006215515
申请日：2006-08-08
申请人： Toshiba Corp , 株式会社東芝
发明人： OBATA MINORU , SUMIYA RIE , KAWANO SHOHEI , ITO KIICHI , ASANO MASAYUKI
IPC分类号： B23K31/00 , B23K9/00 , B23K9/095 , B23K9/12 , B23K26/00 , B23K26/08 , B23K26/20 , G21C19/02 , G21D1/00
CPC分类号： Y02E30/40
摘要： PROBLEM TO BE SOLVED: To reduce a residual tensile stress generated in a boundary between a member to be repaired and a repair weld zone or convert the stress into the residual tensile stress suitably without increasing cost. SOLUTION: This method of repairing a nuclear reactor structure by welding damage caused on the surface of a nuclear reactor structure. Of the welding starting part 13 and the welding completing part 14 that form a boundary between the member 11 to be repaired and the repair weld zone 12 of the nuclear rector structure; the welding is performed in the manner that, in the welding starting part 13, a welding heat input is continuously raised to a prescribed value and that, in the welding completing part 14, the welding heat input is continuously degraded from the prescribed value. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了减少在要修理的构件和修补焊接区之间的边界中产生的残余拉伸应力或者将应力适当地转换成残余拉伸应力而不增加成本。解决方案：这种通过在核反应堆结构的表面上引起的焊接损坏来修复核反应堆结构的方法。焊接起始部13和形成待修理构件11与核反应器结构的修补焊接区12之间的边界的焊接完成部14; 以焊接起动部13将焊接热输入连续提高到规定值，焊接完成部14中的焊接热输入从规定值连续劣化的方式进行焊接。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2007190580A Welding method for cylindrical structure 审中-公开
标题翻译：圆柱结构焊接方法
公开(公告)号：JP2007190580A
公开(公告)日：2007-08-02
申请号：JP2006009880
申请日：2006-01-18
申请人： Toshiba Corp , 株式会社東芝
发明人： ITAYA MASAO , ASANO MASAYUKI , KIKUCHI MASAAKI , SAITO TOSHIYUKI , TANAKA NORIHIKO , OBATA MINORU , SUMIYA RIE , KAWANO SHOHEI , KUBO TATSUYA
IPC分类号： B23K31/00 , B23K9/00 , B23K9/235 , B23K101/06 , B23K101/12
摘要： PROBLEM TO BE SOLVED: To provide a welding method for a cylindrical structure with less residual stress exerted therein.
SOLUTION: The welding method for a cylindrical structure comprises: (1) an internal pressure loading step of loading the internal pressure on cylinders 1a, 1b to constitute a cylindrical structure and expanding the cylinders in the radial direction; (2) a welding step of welding the cylinders; and (3) an internal pressure relieving step of relieving the internal pressure after completing the welding.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种在其中施加较少残余应力的圆柱形结构的焊接方法。解决方案：一种圆柱形结构的焊接方法，包括：（1）将内部压力加载到气缸1a，1b上以构成圆柱形结构并沿径向膨胀气缸的内部压力加载步骤; （2）焊接气缸的焊接步骤; 和（3）在完成焊接之后减轻内部压力的内部减压步骤。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2006253721A Ta MATERIAL FOR MAGNETRON SPUTTERING APPARATUS 有权
标题翻译：用于MAGNETRON SPUTTERING设备的材料
公开(公告)号：JP2006253721A
公开(公告)日：2006-09-21
申请号：JP2006158874
申请日：2006-06-07
申请人： Toshiba Corp , 株式会社東芝
发明人： ISHIGAMI TAKASHI , SATO MICHIO , OBATA MINORU , MIYAUCHI MASAMI , KAWAI MITSUO , YAMANOBE TAKASHI , MAKI TOSHIHIRO , YAGI NORIAKI , ANDO SHIGERU , KOBANAWA YOSHIKO
IPC分类号： H01L21/285 , C23C14/34 , H01L21/28
摘要： PROBLEM TO BE SOLVED: To provide a high purity Ta material for obtaining a high reliability semiconductor element by employing a film composed of a high melting point metal, an alloy of high melting point metal, a silicide of high melting point metal, or a nitride of Ti, Ta, W, or Ti-W alloy in a contact barrier layer, a gate electrode or the like thereby suppressing leak current of a semiconductor element.
SOLUTION: In the high purity Ta material for magnetron sputtering apparatus, content of Al in the contact barrier layer composed of a Ta nitride in a semiconductor element having a junction depth of 0.1-0.3 μm in the source-drain region is 1×10
17 /cm
3 or less in atomic number, content of heavy metal elements other than Ta is 1×10
17 /cm
3 or less, content of alkaline metal is 3×10
16 /cm
3 or less, and concentration of Al is 1 ppm or less.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种用于通过使用由高熔点金属，高熔点金属的合金，高熔点金属的硅化物构成的膜来获得高可靠性半导体元件的高纯度Ta材料，或Ti，Ta，W或Ti-W合金的氮化物，从而抑制半导体元件的漏电流。解决方案：在用于磁控溅射装置的高纯度Ta材料中，源极 - 漏极区域中结晶深度为0.1-0.3μm的半导体元件中的Ta氮化物的接触阻挡层中的Al含量为1 ×10 17 / cm 3 以下，重金属元素除Ta以外的含量为1×10 17 / SP > 3 以下，碱金属的含量为3×10 16 / cm 3 / SP> 3以下，Al浓度为1ppm以下。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2006253720A PROCESS FOR PRODUCING HIGH PURITY Ti MATERIAL FOR MAGNETRON SPUTTERING APPARATUS 有权
标题翻译：用于制造磁性溅射装置的高纯Ti材料的方法
公开(公告)号：JP2006253720A
公开(公告)日：2006-09-21
申请号：JP2006158873
申请日：2006-06-07
申请人： Toshiba Corp , 株式会社東芝
发明人： ISHIGAMI TAKASHI , SATO MICHIO , OBATA MINORU , MIYAUCHI MASAMI , KAWAI MITSUO , YAMANOBE TAKASHI , MAKI TOSHIHIRO , YAGI NORIAKI , ANDO SHIGERU , KOBANAWA YOSHIKO
IPC分类号： H01L21/285 , C23C14/34 , H01L21/28
摘要： PROBLEM TO BE SOLVED: To provide a production process of a high purity Ti material for obtaining a high reliability semiconductor element by employing a film composed of a Ti nitride in a contact barrier layer, a gate electrode or the like thereby suppressing leak current of a semiconductor element.
SOLUTION: In the production process of a high purity Ti material for magnetron sputtering apparatus, Al is removed from a Ti material with its concentration held to 3 ppm or less by electron beam dissolution process in order to form the contact barrier layer composed of a Ti nitride in a semiconductor element having a junction depth of 0.1-0.3 μm in the source-drain region with atomic number of 1×10
18 /cm
3 or less.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供高纯Ti材料的制造方法，用于通过在接触阻挡层，栅电极等中使用由Ti氮化物构成的膜来获得高可靠性的半导体元件，从而抑制泄漏半导体元件的电流。解决方案：在用于磁控溅射装置的高纯度Ti材料的制造方法中，通过电子束溶解工艺将Al浓度保持在3ppm以下的Ti材料中去除Al，以形成接触阻挡层在原子序数为1×10 18 / cm 3 / SP> 3的源极 - 漏极区域中具有0.1-0.3μm的结深度的半导体元件中的Ti氮化物。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2005351805A Prediction method for neutron irradiated quantity distribution of reactor structure 审中-公开
标题翻译：反应器结构中性辐射量分布预测方法
公开(公告)号：JP2005351805A
公开(公告)日：2005-12-22
申请号：JP2004174245
申请日：2004-06-11
申请人： Toshiba Corp , 株式会社東芝
发明人： KAWANO SHOHEI , OBATA MINORU , TANAKA SHIGEAKI , SAKAMOTO HIROSHI , KUROSAWA MASAHIKO
IPC分类号： G21C17/00 , G21C17/003
摘要： PROBLEM TO BE SOLVED: To provide a method for accurately estimating distribution of neutron irradiation quantity that reactor structure receives.
SOLUTION: The method is constituted of an analysis process S1 for numerically analyzing neutron irradiation quantity of reactor structure receiving or having received neutron irradiation, a selection process S2 for selecting a sampling position of a specimen of reactor structure, based on the analyzed neutron irradiation distribution; a sampling process S3 for obtaining a sample from the reactor structure; an investigation process S4 for investigating the neutron irradiation quantity of the sample obtained, a correction process S5, for correcting the neutron irradiation quantity distribution analyzed from the investigated neutron irradiation quantity, and an estimation process S6 for estimating the actual neutron irradiation distribution quantity from the corrected neutron irradiation quantity distribution.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种精确估计反应堆结构接收的中子辐射量分布的方法。解决方案：该方法由用于数字分析接收或接收中子辐射的反应堆结构的中子辐射量的分析过程S1，基于分析的反应器结构的样品的取样位置的选择过程S2 中子辐射分布; 用于从反应器结构获得样品的采样过程S3; 用于调查所获得的样品的中子照射量的调查处理S4，用于校正从所研究的中子辐射量分析的中子辐射量分布的校正处理S5以及用于从所研究的中子辐射量估计中子辐射分布量的估计处理S6 校正中子辐射量分布。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2005338097A Repair device and machining device for structure 有权
标题翻译：维修装置和结构加工装置
公开(公告)号：JP2005338097A
公开(公告)日：2005-12-08
申请号：JP2005196354
申请日：2005-07-05
申请人： Toshiba Corp , 株式会社東芝
发明人： ITO ARATA , SHIMIZU MITSUKO , AOKI NOBUTADA , MUKAI SHIGEHIKO , OBATA MINORU , SATO KATSUHIKO
IPC分类号： G21C19/02 , B23K26/00 , B23K26/08 , B23K26/12 , B23K101/12 , G21D1/00
CPC分类号： Y02E30/40
摘要： PROBLEM TO BE SOLVED: To suppress stress corrosion damage to structural material to increase a service life of equipment by improving a stress state of the surface of a structure inside reactor water inside a nuclear reactor pressure vessel. SOLUTION: A vertically movable and rotatable folding arm 13 is suspended from an upper part of the nuclear reactor pressure vessel 7 by wires 8, is passed through an upper lattice plate opening part 11, and is installed in an upper lattice plate lower chamber 28. An installation base 20 of the arm 13 is installed with a laser irradiation device. The installation base 20 is provided with a repair work device 14 for delivery, and pulse laser light of visible light is irradiated by the laser irradiation device while scanning a prescribed range by a prescribed range, so as to apply laser machining to the inner face of a shroud 15. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：通过改善核反应堆压力容器内的反应堆内的结构的表面的应力状态，抑制对结构材料的应力腐蚀损伤，从而延长设备的使用寿命。解决方案：垂直移动和可旋转的折叠臂13通过导线8从核反应堆压力容器7的上部悬挂，穿过上格栅板开口部分11，并安装在下格栅板下部臂13的安装基座20安装有激光照射装置。安装基座20设置有用于输送的修理工作装置14，并且在将规定范围扫描规定范围的同时，由激光照射装置照射可见光的脉冲激光，以对激光照射装置的内表面进行激光加工版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2005012237A MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT, AND Ta MATERIAL FOR MAGNETRON SPUTTERING APPARATUS 审中-公开
标题翻译：半导体元件的制造方法和磁控溅射装置的材料
公开(公告)号：JP2005012237A
公开(公告)日：2005-01-13
申请号：JP2004246805
申请日：2004-08-26
申请人： Toshiba Corp , 株式会社東芝
发明人： ISHIGAMI TAKASHI , SATO MICHIO , OBATA MINORU , MIYAUCHI MASAMI , KAWAI MITSUO , YAMANOBE TAKASHI , MAKI TOSHIHIRO , YAGI NORIAKI , ANDO SHIGERU , KOBANAWA YOSHIKO
IPC分类号： C23C14/14 , C23C14/34 , H01L21/28 , H01L21/285 , H01L21/336 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/78 , H01L29/861
摘要： PROBLEM TO BE SOLVED: To provide a high reliability semiconductor element which uses a film made of refractory metal, alloy made of refractory metal, silicide of refractory metal, and nitride of Ti, Ta, W, and Ti-W alloy, for a contact barrier layer, a gate electrode or the like, and reduces a leakage current of itself.
SOLUTION: The manufacturing method of semiconductor element includes steps of : removing Al from a Ta raw material to prepare a Ta material for magnetron sputtering apparatus, of which Al concentration is 1ppm or less; using the Ta material to form a contact barrier or gate electrode layer of which Al content is 1×10
18 atoms/cm
3 , where the depth of junction of a source/drain region is 0.3 μm or shallower.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供使用由难熔金属制成的膜，耐火金属制的合金，难熔金属的硅化物和Ti，Ta，W和Ti-W合金的氮化物的高可靠性的半导体元件，用于接触阻挡层，栅电极等，并且减少其自身的漏电流。解决方案：半导体元件的制造方法包括以下步骤：从Ta原料中去除Al，制备Al浓度为1ppm以下的磁控溅射装置用Ta材料; 使用Ta材料形成其中Al含量为1×10 -6原子/ cm 3 SP / 3的接触屏障或栅极电极层，其中源极/ 漏极区域为0.3μm或更浅。版权所有（C）2005，JPO＆NCIPI

9. 发明专利

JP2012240059A Weld portion repairing method 审中-公开
标题翻译：焊接部维修方法
公开(公告)号：JP2012240059A
公开(公告)日：2012-12-10
申请号：JP2011109660
申请日：2011-05-16
申请人： Toshiba Corp , 株式会社東芝
发明人： FUKUDA TAKESHI , KONO WATARU , TAMURA MASAKI , OBATA MINORU , MORISHIMA YASUO
IPC分类号： B23K26/34 , B23K9/00 , B23K9/028 , B23K26/12 , B23K26/20 , B23K31/00 , B23K103/18 , G21C19/02
摘要： PROBLEM TO BE SOLVED: To provide a weld portion repairing method which enables high-quality padding welding hardly generating melting shortage, undercut, and poor fusion to efficiently be performed when repairing the weld portion wherein members having different materials are welded and joined each other.SOLUTION: In the weld portion repairing method for repairing the weld portion wherein a first member 1 requiring temper bead welding and a second member 2 not requiring the temper bead welding are joined each other, there are included a cutting process of forming a groove section by cutting sections containing a part of the weld portion, and a padding welding process of performing multi-layered padding welding to the groove section. The padding welding process includes a temper bead multi-layered padding welding process to the first member 1, and thickness of a padding layer based the temper bead multi-layered padding welding process is thinner at a lower layer section rather than that of an upper layer section.
摘要翻译：要解决的问题：为了提供焊接部分修复方法，其能够在修补其中具有不同材料的部件被焊接和接合的焊接部分时有效地进行难以产生熔化不足，底切和不良熔合的高质量焊接焊接彼此。解决方案：在用于修理焊接部分的焊接部分修复方法中，其中需要回火焊珠的第一部件1和不需要回火焊珠的第二部件2彼此接合，包括形成通过切割包含焊接部分的一部分的切割部分的凹槽部分以及对槽部进行多层填充焊接的填充焊接工艺。衬垫焊接工艺包括对第一构件1进行回火珠多层填充焊接工艺，并且基于回火焊珠多层填充焊接工艺的衬垫层的厚度在下层部分而不是上层部分的厚度较薄部分。版权所有（C）2013，JPO＆INPIT

10. 发明专利

JP2012187614A Welding method, and structure 审中-公开
标题翻译：焊接方法和结构
公开(公告)号：JP2012187614A
公开(公告)日：2012-10-04
申请号：JP2011054525
申请日：2011-03-11
申请人： Toshiba Corp , 株式会社東芝
发明人： FUJITA YOSHIHIRO , ISHIZAKI YOSHIKI , ASAI SATORU , MORISHIMA YASUO , OBATA MINORU
IPC分类号： B23K9/23 , B23K9/00 , B23K9/04 , B23K9/167 , B23K35/30 , C22C19/05 , G21C19/02
摘要： PROBLEM TO BE SOLVED: To provide a welding method that prevents both of a stress corrosion cracking and a weld cracking, and to provide a structure.SOLUTION: The welding method includes the steps of: welding a base material with a first welding material comprising an Ni-based heat resistant super alloy that is formed chiefly Ni of 25 mass% or less Cr to form a welded part; and welding over the welded part with a second welding material comprising an Ni-based heat resistant super alloy that is formed chiefly Ni of more than 30 mass% Cr to cover the welded part.

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