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1. 发明专利

JP2013070099A Method for manufacturing semiconductor light-emitting element 审中-公开
标题翻译：制造半导体发光元件的方法
公开(公告)号：JP2013070099A
公开(公告)日：2013-04-18
申请号：JP2013001205
申请日：2013-01-08
申请人： Toshiba Corp , 株式会社東芝
发明人： TACHIBANA KOICHI , NAKO HAJIME , SAITO SHINJI , NUNOE SHINYA , HATAKOSHI GENICHI
IPC分类号： H01L33/32 , H01L21/205 , H01L33/22 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To enable reduction in operation voltage without damage to an active layer.SOLUTION: A method for manufacturing a semiconductor light-emitting element includes: forming an n-type layer composed of a group III-V nitride semiconductor on a substrate in which a first inclination angle in a direction from a {0001} face is 0° or more and 45° or less, a second inclination angle in a direction is 0° or more and 10° or less, and at least one of the first inclination angle and the second inclination angle is not 0°; forming an active layer composed of the group III-V nitride semiconductor on the n-type layer; forming a p-type first layer composed of the group III-V nitride semiconductor on the active layer; forming an uneven layer including the group III-V nitride semiconductor containing at least Al and having an uneven shape on its top face, on the p-type first layer; and forming a p-type contact layer composed of the group III-V nitride semiconductor on the uneven layer. The uneven layer has a p-type impurity concentration lower than that of the p-type contact layer.
摘要翻译：要解决的问题：能够降低工作电压而不损坏有源层。解决方案：一种制造半导体发光元件的方法包括：在基板上形成由III-V族氮化物半导体构成的n型层，其中沿<1-100>方向的第一倾斜角从 ä0001}面为0°以上且45°以下，在<11-20>方向上的第二倾斜角为0°以上且10°以下，第一倾斜角和第二倾斜角中的至少一个倾角不为0°; 在n型层上形成由III-V族氮化物半导体构成的有源层; 在有源层上形成由III-V族氮化物半导体构成的p型第一层; 在p型第一层上形成包含至少包含Al且在其顶面上具有不均匀形状的III-V族氮化物半导体的不均匀层; 以及在所述凹凸层上形成由III-V族氮化物半导体构成的p型接触层。不均匀层的p型杂质浓度比p型接触层低。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2012069982A Nitride semiconductor light-emitting element 有权
标题翻译：氮化物半导体发光元件
公开(公告)号：JP2012069982A
公开(公告)日：2012-04-05
申请号：JP2011252895
申请日：2011-11-18
申请人： Toshiba Corp , 株式会社東芝
发明人： TACHIBANA KOICHI , NAKO HAJIME , HIKOSAKA TOSHITERU , NUNOUE SHINYA
IPC分类号： H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting element that can prevent degradation in quantum efficiency caused by injection current dependence and has high optical output and high efficiency.SOLUTION: A nitride semiconductor light-emitting diode comprises p-type and n-type GaN layers, and an active layer of a single quantum well structure or a multiple quantum well structure sandwiched between the GaN layers. The active layer includes a quantum well layer 4a and a pair of barrier layers 4b sandwiching the quantum well layer 4a therebetween, having a larger band gap than the quantum well layer 4a. Each of the pair of barrier layers 4b has a multilayer structure including a first sub-barrier layer 4b1 composed of InGaN, a second sub-barrier layer 4b2 composed of InGaN, and a third sub-barrier layer 4b3 composed of InGaN in this order from the quantum well layer side, and the following relationships are satisfied: 0
摘要翻译：解决的问题：提供能够防止由注入电流依赖性引起的量子效率劣化的氮化物半导体发光元件，具有高的光输出和高效率。解决方案：氮化物半导体发光二极管包括p型和n型GaN层，以及夹在GaN层之间的单量子阱结构或多量子阱结构的有源层。有源层包括量子阱层4a和夹在其间的量子阱层4a的一对势垒层4b，其具有比量子阱层4a更大的带隙。一对势垒层4b中的每一个具有多层结构，该多层结构包括由第一子阻挡层4b1和第二子阻挡层4b1构成的第一子阻挡层4b1， SB> N，由In y2 N组成的第二子阻挡层4b2，以及第三子阻挡层4b2，从量子阱层侧按顺序由In y3 Ga 1-y3 N组成的阻挡层4b3，满足：0

3. 发明专利

JP2012039151A Method for manufacturing semiconductor light emitting element 有权
标题翻译：制造半导体发光元件的方法
公开(公告)号：JP2012039151A
公开(公告)日：2012-02-23
申请号：JP2011244330
申请日：2011-11-08
申请人： Toshiba Corp , 株式会社東芝
发明人： NAKO HAJIME , TACHIBANA KOICHI , HIKOSAKA TOSHITERU , NUNOUE SHINYA
IPC分类号： H01L33/32 , H01L21/205 , H01L33/22 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor light-emitting element capable of growing a uniform crystal on a substrate having unevenness.SOLUTION: The method for manufacturing the semiconductor light-emitting element comprises a step for growing up the crystal of nitride semiconductor on a principal plane of the substrate having the principal plane in which the unevenness is prepared. A buffer layer including GaAlN (0.1≤x
摘要翻译：解决的问题：提供一种能够在具有不平坦的基板上生长均匀晶体的半导体发光元件的制造方法。解决方案：半导体发光元件的制造方法包括在具有准备不平坦的主面的基板的主面上使氮化物半导体的晶体长大的工序。包含厚度为20nm以上的缓冲层，包括Ga（SB）=“POST”> 1-x N（0.1≤x<0.5）并且以0.1μm/ h以下的速度在主面上沉积50nm以下，并且在缓冲层的沉积中，包含氮化物半导体的晶体在缓冲层上以高于衬底的温度生长。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2003329662A Chromatograph analysis system, server device and method of providing method of coping with abnormality 审中-公开
标题翻译：色谱分析系统，服务器装置和提供异常方法的方法
公开(公告)号：JP2003329662A
公开(公告)日：2003-11-19
申请号：JP2002133486
申请日：2002-05-09
申请人： Toshiba Corp , 株式会社東芝
发明人： NAKO HAJIME
IPC分类号： G01N30/86 , G06F17/30 , G06Q50/00 , G06Q50/10 , G06F17/60
摘要： PROBLEM TO BE SOLVED: To provide a method having high possibility of coping with an abnor mality when the abnormality is caused in analysis result. SOLUTION: When analysis result of chemical analysis by an analysis processing part 20 of a chromatograph analyzer 2-1 shows abnormality, a free sentence showing the abnormality is input and the free sentence is subjected to document analysis. A table made to correspond the words or sentences showing the contents of abnormality in a designated form to the coping method information showing a coping method having the possibility of correcting the abnormality is retrieved by document analysis result of the free sentence to extract the coping method information, and the coping method information is presented to the chromatograph analyzer 2-1. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种在分析结果中引起异常时具有应对异常的高可能性的方法。解决方案：当色谱分析仪2-1的分析处理部分20的化学分析的分析结果显示异常时，输入显示异常的自由句子，并对自由句进行文件分析。将表示指定形式的异常内容的单词或句子对应于表示具有校正异常的可能性的应对方法的应对方法信息的表通过自由句的文档分析结果来检索，以提取应对方法信息，并将应对方法信息提供给色谱仪分析仪2-1。版权所有（C）2004，JPO

5. 发明专利

JP2008243904A Semiconductor light-emitting element, manufacturing method therefor, and light-emitting device 有权
标题翻译：半导体发光元件及其制造方法及发光器件
公开(公告)号：JP2008243904A
公开(公告)日：2008-10-09
申请号：JP2007078719
申请日：2007-03-26
申请人： Toshiba Corp , 株式会社東芝
发明人： NAKO HAJIME , TACHIBANA KOICHI , ZAIMA KOTARO , SAITO SHINJI , NUNOGAMI SHINYA , OKA TOSHIYUKI
IPC分类号： H01L33/06 , H01L33/08 , H01L33/32 , H01L33/40 , H01L33/50 , H01L33/56 , H01L33/62 , H01S5/343
CPC分类号： H01L33/32 , F21K9/00 , H01L27/156 , H01L33/16 , H01L2224/05568 , H01L2224/05573 , H01L2224/05639 , H01L2224/05644 , H01L2224/05666 , H01L2224/05669 , H01L2224/16 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element of high color rendition, along with its manufacturing method and a light-emitting device.
SOLUTION: The semiconductor light-emitting element comprises a semiconductor substrate 2 consisting of, on its surface; a protruding part 2a whose upper surface is a slope 2a1 and a recess 2b which is formed on both sides of the protruding part and is narrower in width than the protruding part, with its bottom surface being positioned deeper than the upper surface of the protruding part; and a light-emitting layer 4 consisting of a nitride semiconductor that is so formed as to cover at least the protruding part above the semiconductor substrate.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供高色彩的半导体发光元件及其制造方法和发光装置。解决方案：半导体发光元件包括半导体衬底2，在其表面上包括：上表面是斜面2a1的突出部2a和形成在突出部的两侧并且宽度比突出部窄的凹部2b，其底面位于比突出部的上表面更深的位置 ; 以及由形成为至少覆盖半导体基板上方的突出部的氮化物半导体构成的发光层4。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2006035218A Soil treating apparatus 有权
标题翻译：土壤处理设备
公开(公告)号：JP2006035218A
公开(公告)日：2006-02-09
申请号：JP2005237609
申请日：2005-08-18
申请人： Toshiba Corp , 株式会社東芝
发明人： TODOROKI TOMOHIRO , GOTANDA TAKESHI , YOSHIKAWA TOMOKO , NAKO HAJIME
IPC分类号： B09C1/06 , B01D53/70 , B09B3/00
CPC分类号： Y02W30/20
摘要： PROBLEM TO BE SOLVED: To provide an apparatus that can efficiently extract organic halogen compounds such as PCBs (perchlorobiphenyls) and dioxins from a contaminated soil and, at the same time, uses steam for stably decomposing the organic halogen compounds into a hydrogen halide and carbon dioxide for rendering the compound harmless. SOLUTION: This treating apparatus is equipped with a first heating chamber for storing the soil, a heating means for indirectly heating the first heating chamber, a second heating chamber for storing gas components produced from the first heating chamber, and a heating means for indirectly heating the second heating chamber. When the soil contaminated with the organic halogen compounds is indirectly heated to vaporize the organic halogen compounds and to react the vaporized organic halogen compounds with steam in an indirectly heated system, thereby the organic halogen compounds are decomposed into the hydrogen halide and carbon dioxide. At the same time, while regulating the amount of steam according to the concentration of carbon monoxide in gas being produced, heating is indirectly carried out to reliably decompose the organic halogen compounds contained in the soil. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够从受污染的土壤中有效提取有机卤素化合物如PCB（全氯代联苯）和二恶英的装置，同时使用蒸汽将有机卤素化合物稳定地分解成氢卤化物和二氧化碳，使化合物无害化。解决方案：该处理装置配备有用于储存土壤的第一加热室，用于间接加热第一加热室的加热装置，用于存储由第一加热室产生的气体成分的第二加热室和加热装置用于间接加热第二加热室。当被有机卤素化合物污染的土壤被间接加热以蒸发有机卤素化合物并使蒸发的有机卤素化合物与间接加热的系统中的蒸汽反应时，有机卤素化合物被分解成卤化氢和二氧化碳。同时，在根据生产气体中一氧化碳浓度调节蒸汽量的同时，间接进行加热以可靠地分解土壤中含有的有机卤素化合物。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2005161315A Method for treating contaminant 审中-公开
标题翻译：处理污染物的方法
公开(公告)号：JP2005161315A
公开(公告)日：2005-06-23
申请号：JP2005023686
申请日：2005-01-31
申请人： Toshiba Corp , 株式会社東芝
发明人： GOTANDA TAKESHI , YOSHIKAWA TOMOKO , TODOROKI TOMOHIRO , NAKO HAJIME , HANAKADA YOSHIO
IPC分类号： A62D3/40 , A62D101/22 , A62D101/24 , A62D101/26 , A62D101/28 , B09B3/00 , B09C1/06
摘要： PROBLEM TO BE SOLVED: To provide a method for treating a contaminant in soil, by which the contaminated soil can be decontaminated efficiently without causing the contaminant to leak to the outside while saving expenditures and labor.
SOLUTION: This treating method is that the contaminant and an organic carbon compound in the contaminated soil are vaporized by heating the soil, a gas containing the vaporized contaminant and organic carbon compound is heated in an oxygen-lowered atmosphere so that the organic carbon compound is carbonized to produce carbon particles, and the produced carbon particles are collected and the contaminant adsorbed on the collected carbon particles is recovered. Otherwise, the soil is heated and the contaminant contained in the soil is gasified and is then cooled to obtain a condensation liquid, from which the contaminant is eliminated. The contaminant is recovered from the obtained condensate, namely, the condensate is separated into a hydrophilic phase and an oleophilic phase, the dust contained in the hydrophilic phase is separated and the contaminant is removed from the hydrophilic phase by making the hydrophilic phase pass through a separation membrane.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种处理土壤中的污染物的方法，通过该方法可以有效地净化污染的土壤，而不会使污染物泄漏到外部，同时节省费用和劳动。解决方案：该处理方法是通过加热土壤将污染土壤中的污染物和有机碳化合物汽化，将含有蒸发污染物和有机碳化合物的气体在氧气降低的气氛中加热，使得有机物将碳化合物碳化以产生碳颗粒，并收集生成的碳颗粒并回收吸收在收集的碳颗粒上的污染物。否则，土壤被加热，并且土壤中所含的污染物被气化，然后被冷却以获得冷凝液体，从中排出污染物。从所获得的冷凝物中回收污染物，即将冷凝物分离成亲水相和亲油相，亲水相中包含的粉尘被分离，并且通过使亲水相通过一个亲水相将污染物从亲水相中除去分离膜。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2005081234A Decomposition apparatus for contaminant gas and treatment apparatus for contaminated soil 有权
标题翻译：用于污染土壤的污染物和处理装置的分解装置
公开(公告)号：JP2005081234A
公开(公告)日：2005-03-31
申请号：JP2003315734
申请日：2003-09-08
申请人： Tanabe Kogyo Kk , Toshiba Corp , 株式会社東芝 , 田辺工業株式会社
发明人： SATO TAKESHI , TODOROKI TOMOHIRO , GOTANDA TAKESHI , YOSHIKAWA TOMOKO , NAKO HAJIME , NIIZAWA YUKIHIKO
IPC分类号： F23G7/06 , B01D53/70 , B09C1/06
摘要： PROBLEM TO BE SOLVED: To provide a decomposition apparatus for a contaminant gas and a treatment apparatus for contaminated soil, both capable of decomposing a contaminant gas certainly without discharging a large amount of an exhaust gas. SOLUTION: The decomposition apparatus for a contaminant gas is equipped with a first heating furnace (10) for elevating the temperature of the contaminant gas, a second heating furnace (20) for maintaining the contaminant gas at a temperature after the temperature elevation and reacting the contaminant gas with an oxidizer gas, a plurality of radiant tube heaters (13, 23) installed in the first and second heating furnaces (10, 20), and heat insulating materials (12, 22) for covering the first and second heating furnaces (10, 20). COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供用于污染气体的分解装置和污染土壤的处理装置，两者都能够在不排出大量废气的情况下肯定地分解污染气体。解决方案：用于污染气体的分解装置装备有用于提高污染气体的温度的第一加热炉（10），用于将污染气体维持在温度升高之后的温度的第二加热炉（20）并使污染气体与氧化剂气体反应，安装在第一和第二加热炉（10,20）中的多个辐射管加热器（13,23）和用于覆盖第一和第二加热炉的隔热材料（12,22）加热炉（10,20）。版权所有（C）2005，JPO＆NCIPI

9. 发明专利

JP2012080139A Semiconductor light-emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：JP2012080139A
公开(公告)日：2012-04-19
申请号：JP2012012637
申请日：2012-01-25
申请人： Toshiba Corp , 株式会社東芝
发明人： TACHIBANA KOICHI , HIKOSAKA TOSHITERU , KIMURA SHIGEYA , NAKO HAJIME , NUNOUE SHINYA
IPC分类号： H01L33/04 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element having high internal quantum efficiency and high light-extraction efficiency.SOLUTION: A semiconductor light-emitting element comprises: an n-type semiconductor layer 10 containing a nitride semiconductor; a p-type semiconductor layer containing a nitride semiconductor; and a light-emitting portion 30 that is provided between the n-type semiconductor layer and the p-type semiconductor layer and has a plurality of barrier layers 31 and a plurality of well layers 32 that are alternately stacked. The composition ratio wn of the n-side end well layer nearest the n-type semiconductor layer and the composition ratio wp of the p-side end well layer nearest the p-type semiconductor layer 20 are larger than the composition ratio bn of the n-side end barrier layer nearest the n-type semiconductor layer and the composition ratio bp of the p-side end barrier layer nearest the p-type semiconductor layer. The p-side end average In composition ratios of the well layer and the barrier layer nearest the p-type semiconductor layer are larger than the n-side end average In composition ratios of the well layer and the barrier layer nearest the n-type semiconductor layer, and are less than five times of the n-side end average In composition ratios.
摘要翻译：要解决的问题：提供具有高的内部量子效率和高的光提取效率的半导体发光元件。解决方案：半导体发光元件包括：含有氮化物半导体的n型半导体层10; 含有氮化物半导体的p型半导体层; 以及设置在n型半导体层和p型半导体层之间并且具有交替层叠的多个势垒层31和多个阱层32的发光部30。最靠近n型半导体层的n侧端阱层的组成比wn和最靠近p型半导体层20的p侧端阱层的组成比wp大于n型半导体层20的组成比bn 最靠近n型半导体层的端侧阻挡层和最靠近p型半导体层的p侧端势垒层的组成比bp。阱层和最靠近p型半导体层的势垒层的p侧端平均In组成比大于最靠近n型半导体的阱层和阻挡层的n侧端平均In组成比并且小于n侧端平均In组成比的5倍。版权所有（C）2012，JPO＆INPIT

10. 发明专利

JP2011187622A Semiconductor light-emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：JP2011187622A
公开(公告)日：2011-09-22
申请号：JP2010050391
申请日：2010-03-08
申请人： Toshiba Corp , 株式会社東芝
发明人： KIMURA SHIGEYA , NAKO HAJIME , OKA TOSHIYUKI , TACHIBANA KOICHI , HIKOSAKA TOSHITERU , NUNOGAMI SHINYA
IPC分类号： H01L33/06 , H01L33/32
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/04 , H01L33/06 , H01S5/3216 , H01S5/34333
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device which is improved in luminous efficiency and lowered in driving voltage, and to provide a method for manufacturing the same. SOLUTION: The semiconductor light-emitting device includes an n-type semiconductor layer including a nitride semiconductor, a p-type semiconductor layer including a nitride semiconductor, a light-emitting portion 40, and a laminate 30. The light-emitting portion 40 is provided between the n-type and p-type semiconductor layers and includes a well layer 42 including a nitride semiconductor and a barrier layer 41 including a nitride semiconductor. The laminate 30 is provided between the light-emitting portion 40 and the n-type semiconductor layer and includes a first layer 31 and a second layer 32 differing in In composition ratio. An average thickness of the barrier layer 41 is ≤10 nm, and p>0.4q is satisfied, where (p) represents an In composition ratio of the laminate 30 and (q) represents an In composition ratio of the light-emitting portion 40. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种提高发光效率和降低驱动电压的半导体发光器件，并提供其制造方法。解决方案：半导体发光器件包括包括氮化物半导体的n型半导体层，包括氮化物半导体的p型半导体层，发光部分40和层压体30。发光部分40设置在n型和p型半导体层之间，并且包括包括氮化物半导体的阱层42和包括氮化物半导体的势垒层41。层叠体30设置在发光部40和n型半导体层之间，并且包括第一层31和In的组成比不同的第二层32。阻挡层41的平均厚度为≤10nm，p> 0.4q，其中（p）表示层叠体30的In组成比，（q）表示发光部40的In组成比版权所有（C）2011，JPO＆INPIT

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