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1. 发明专利

JP2011129690A Method for manufacturing semiconductor device and semiconductor device 审中-公开
标题翻译：制造半导体器件和半导体器件的方法
公开(公告)号：JP2011129690A
公开(公告)日：2011-06-30
申请号：JP2009286484
申请日：2009-12-17
申请人： Toshiba Corp , 株式会社東芝
发明人： KUBOTA HIROSHI
IPC分类号： H01L21/3205 , H01L23/52
CPC分类号： H01L23/53295 , H01L21/76801 , H01L21/76804 , H01L21/76816 , H01L21/76843 , H01L23/5226 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To certainly form a seed film on a side wall of a wiring groove in forming a damascene interconnect. SOLUTION: A plasma silicon nitride film 2 and a plasma TEOS oxide film 3 are formed on a substrate insulating film 1. The plasma TEOS oxide film 3 is formed by a two-frequency excitation plasma CVD device using a high-frequency power supply and a low-frequency power supply such that a film density thereof decreases toward an upper part. After forming a wiring groove by an RIE method, a part having a low film density is quickly etched by wet etching to form a wiring groove 3a having a tapered shape. Thereby, in forming a barrier metal film 4 by sputtering, the barrier metal film can be certainly formed on a side wall of the wiring groove 3a, and plating of a copper film 5 can be formed without causing a void. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了在形成大马士革互连件中在布线槽的侧壁上肯定地形成种子膜。解决方案：在衬底绝缘膜1上形成等离子体氮化硅膜2和等离子体TEOS氧化物膜3.等离子体TEOS氧化物膜3由使用高频电力的双频激发等离子体CVD装置形成电源和低频电源，使得其密度降低到上部。在通过RIE法形成布线槽之后，通过湿蚀刻快速蚀刻具有低膜密度的部分，以形成具有锥形形状的布线槽3a。由此，在通过溅射形成阻挡金属膜4时，可以在布线槽3a的侧壁上可靠地形成阻挡金属膜，并且可以形成铜膜5的电镀而不产生空隙。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2010047818A Semiconductor manufacturing equipment and semiconductor manufacturing method 审中-公开
标题翻译：半导体制造设备和半导体制造方法
公开(公告)号：JP2010047818A
公开(公告)日：2010-03-04
申请号：JP2008215249
申请日：2008-08-25
申请人： Toshiba Corp , 株式会社東芝
发明人： KUBOTA HIROSHI
IPC分类号： C23C16/56 , C23C16/26 , C23C16/455 , H01L21/205 , H01L21/31
CPC分类号： H01L21/6708 , C23C16/01 , C23C16/042 , C23C16/26 , C23C16/505 , H01J37/32091 , H01J37/3244 , H01J37/32449 , H01L21/02087 , H01L21/02115 , H01L21/02274 , H01L21/0337 , H01L21/31122 , H01L21/3146
摘要： PROBLEM TO BE SOLVED: To provide semiconductor manufacturing equipment and a semiconductor manufacturing method for removing a carbon CVD film deposited on the bevel part of a wafer by dry etching, and preventing production of dust, considerable drop of the throughput or the like. SOLUTION: The semiconductor manufacturing equipment 1 for depositing the carbon CVD film on the wafer 5 by using the PE-CVD (Plasma Enhanced Chemical Vapor Deposition) method comprises a stage 4 provided inside an equipment body 2 to place the wafer 5 thereon, a shower head 3 for closing the upper opening part of the equipment body 2, and a gas supply system having a center gas introduction unit 9 for introducing gas from the center part of the shower head 3 toward the center part of the wafer 5 and an outer circumferential gas introduction unit 10 for introducing gas from the outer circumferential part of the shower head 3 toward the bevel part of the wafer 5. When depositing the carbon CVD film on the wafer 5, the etching gas for executing the etching removal of the carbon CVD film deposited on the bevel part of the wafer 5 is activated outside the equipment body 2, and fed from the outer circumferential gas introduction unit 10 toward the bevel part of the wafer 5. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供半导体制造设备和通过干法蚀刻去除沉积在晶片的斜面部分上的碳CVD膜的半导体制造方法，并且防止灰尘的产生，生产量等的显着降低。解决方案：通过使用PE-CVD（等离子体增强化学气相沉积）方法将碳CVD膜沉积在晶片5上的半导体制造设备1包括设置在设备主体2内部以将晶片5放置在其上的台架4 ，用于封闭设备主体2的上部开口部的喷头3以及具有中心气体引入单元9的气体供给系统，该中心气体引入单元9用于将来自喷淋头3的中心部分的气体引导到晶片5的中心部分，用于将来自喷淋头3的外周部分的气体朝向晶片5的斜面部分引入的外周气体引入单元10.当将碳CVD膜沉积在晶片5上时，用于执行蚀刻去除的蚀刻气体沉积在晶片5的斜面部分上的碳CVD膜在设备主体2的外部被启动，并从外周气体导入单元10朝向晶片5的斜面部分供给。版权所有：（C）2010，JPO＆INPIT

3. 发明专利

JP2010040754A Semiconductor device and method of manufacturing the same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2010040754A
公开(公告)日：2010-02-18
申请号：JP2008201871
申请日：2008-08-05
申请人： Toshiba Corp , 株式会社東芝
发明人： KUBOTA HIROSHI
IPC分类号： H01L21/76 , H01L21/8247 , H01L27/10 , H01L27/115 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To prevent a crystal defect failure due to dislocation.
SOLUTION: A device isolation groove 3 is formed on a semiconductor substrate 2, an O
3 -TEOS film 4a whose top is partially open is formed along an internal surface of the device isolation groove 3, and a polysilazane film 4b is formed on the O
3 -TEOS film 4a.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：防止由于位错导致的晶体缺陷故障。解决方案：在半导体衬底2上形成器件隔离槽3，沿着器件隔离沟槽3的内表面形成顶部部分开放的O 3 SBE-SOS膜4a，并在O 3 SBE膜4a上形成聚硅氮烷膜4b。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2009229103A Quantification method of metal colloid 审中-公开
标题翻译：金属胶体的量化方法
公开(公告)号：JP2009229103A
公开(公告)日：2009-10-08
申请号：JP2008071575
申请日：2008-03-19
申请人： Toshiba Corp , 株式会社東芝
发明人： IKEDA SHIGERU , KUBOTA HIROSHI , KUDO YUKI
IPC分类号： G01N15/14 , G01N15/06
CPC分类号： G01N21/554 , G01N15/1463
摘要： PROBLEM TO BE SOLVED: To provide a method for quantifying metal colloid particles, on which a detection target molecule is supported in a specimen sample.
SOLUTION: The method for quantifying the metal colloid particles, on which the detection target molecule is supported, includes a material preparing process for developing a solution containing the metal colloid particles on a substrate to prepare an observation sample, an image data generating process for photographing the sample in a magnified state to form a plurality of image data with respect to the same visual field, a removing process for comparatively operating a plurality of the generated image data to remove the signal component, which originates from impurities present on the substrate, from the image data, and a measuring process for measuring the number of the metal colloid particles from the image data from which the signal component originating from impurities is removed.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于量化金属胶体颗粒的方法，其上将检测目标分子支撑在样品样品中。解决方案：用于定量检测对象分子负载的金属胶体颗粒的方法包括在基板上显影含有金属胶体颗粒的溶液以制备观察样品的材料制备方法，产生图像数据用于以放大状态拍摄样本以形成相对于相同视野的多个图像数据的处理，用于相对操作多个所生成的图像数据以去除信号分量的去除处理，该信号分量源自存在于基板，以及用于从除去来自杂质的信号分量的图像数据中测量金属胶体颗粒的数量的测量过程。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2008311310A Semiconductor manufacturing apparatus 审中-公开
标题翻译：半导体制造设备
公开(公告)号：JP2008311310A
公开(公告)日：2008-12-25
申请号：JP2007155582
申请日：2007-06-12
申请人： Toshiba Corp , 株式会社東芝
发明人： KUBOTA HIROSHI , FUKUHARA SEITA , SHIBA KATSUIKU
IPC分类号： H01L21/205 , C23C16/44 , C23C16/507 , H01L21/3065 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus capable of stably being operated for a long period of time. SOLUTION: The semiconductor manufacturing apparatus includes a container 11 whose interior can be depressurized, a susceptor 13 which supports a work substrate 12 housed in the container 11, copper tube coils 14 arranged along the outer wall of the container 11, a power source 15 which supplies ac power to the coils 14 to generate plasma in the container 11, a circulating water system 16 which supplies a cooling fluid to one end 14a of each coil 14 and discharges the cooling fluid from the other end 14b of the coil 14 to circulate the cooling fluid through the copper tube of the coil 14, and a coat 17 which is formed on the interior wall of the copper tube of each coil 14 to prevent the corrosion of the coil 14 by the cooling fluid. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供能够长时间稳定地操作的半导体制造装置。解决方案：半导体制造装置包括其内部可以减压的容器11，支撑容纳在容器11中的工作基板12的基座13，沿着容器11的外壁布置的铜管线圈14，源15，其向线圈14提供交流电力以在容器11中产生等离子体;循环水系统16，其将冷却流体供应到每个线圈14的一端14a，并且从线圈14的另一端14b排出冷却流体使冷却流体循环通过线圈14的铜管，以及形成在每个线圈14的铜管的内壁上的涂层17，以防止冷却流体对线圈14的腐蚀。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2008192191A Signal processing method and optical disk drive 审中-公开
标题翻译：信号处理方法和光盘驱动
公开(公告)号：JP2008192191A
公开(公告)日：2008-08-21
申请号：JP2007022257
申请日：2007-01-31
申请人： Toshiba Corp , 株式会社東芝
发明人： KUBOTA HIROSHI
IPC分类号： G11B7/09
CPC分类号： G11B7/0945 , G11B7/0941 , G11B2007/0013
摘要： PROBLEM TO BE SOLVED: To provide an optical disk drive and a signal processing method capable of preventing focusing control from becoming unstable due to an undesirable focusing servo gain fluctuation due to disk defects or recording layer materials.
SOLUTION: The optical disk drive of this invention has a signal processing circuit 21 to calculate the amount of light reflected on the recording layer of the recording medium by using the output summation of the optical detector 14 when moving the objective lens 11 to make a distance between the recording layer of the optical disk 100 and the lens equal to the focal length of the lens, and to limit the change to use as a reflection amount within a predetermined extent when correcting the servo signals pursuing to match the distance between the recording layer of the recording medium and the lens and the focal length of the lens in the output of the optical detector by using an equation: servo error signal after normalization=servo error signal before normalization/reflection amount.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种光盘驱动器和信号处理方法，其能够防止聚焦控制由于由于盘缺陷或记录层材料引起的不期望的聚焦伺服增益波动而变得不稳定。解决方案：本发明的光盘驱动器具有信号处理电路21，用于通过在将物镜11移动到物镜11时使用光学检测器14的输出相加来计算在记录介质的记录层上反射的光量在光盘100的记录层和透镜的距离等于透镜的焦距之间的距离，并且在校正伺服信号时，将改变用作预定范围内的反射量，记录介质的记录层和透镜，以及光学检测器的输出中的透镜的焦距通过使用以下等式：归一化后的伺服误差信号=归一化前的伺服误差信号/反射量。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2008076361A Microscopic apparatus and analyzer 审中-公开
标题翻译： MICROSCOPIC设备和分析仪
公开(公告)号：JP2008076361A
公开(公告)日：2008-04-03
申请号：JP2006259368
申请日：2006-09-25
申请人： Toshiba Corp , 株式会社東芝
发明人： ISHIDA KUNIO , KUBOTA HIROSHI
IPC分类号： G01N21/64 , G01N21/65 , G02B21/06 , G02B21/18
摘要： PROBLEM TO BE SOLVED: To provide a microscopic apparatus for matching a plurality of irradiation locations of a plurality of pulse lights in response to an irregularity in the surface of an analyzed object.
SOLUTION: An analyzer is provided with: light sources 21, 23, 41 for generating a plurality of the beams of pulse laser light P12, P14' including different wavelength components; an optical system 35 for irradiating the analyzed object 60 with the beams of pulse laser light P12, P14'; a first detecting section 62 for detecting first light P15 emitted from the analyzed object 60 by irradiating a plurality of the pulse laser lights P12, P14'; a second detecting section 61 for detecting second light P16 emitted from the analyzed object 60 by irradiating a plurality of the beams of pulse laser light P12, P14'; and adjusting sections 65, 31 for matching the irradiation locations of a plurality of the beams of pulse laser light P12, P14' based on an intensity of the second light P16 detected by the second detecting section 61.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于响应于所分析对象的表面中的不规则性而匹配多个脉冲光的多个照射位置的微观装置。解决方案：分析器设有：用于产生包括不同波长分量的多个脉冲激光束P12，P14'的光源21,23,41; 用于对分析对象物体60照射脉冲激光P12，P14'的光学系统35; 第一检测部62，用于通过照射多个脉冲激光P12，P14'来检测从分析对象60发射的第一光P15; 第二检测部分61，用于通过照射多个脉冲激光束P12，P14'来检测从分析对象物60发射的第二光P16; 以及基于由第二检测部61检测到的第二光P16的强度来匹配多个脉冲激光P12，P14'的照射位置的调整部65,31。（C） 2008年，日本特许厅和INPIT

8. 发明专利

JP2006278135A Superconducting current limiter 有权
标题翻译：超导电流限制
公开(公告)号：JP2006278135A
公开(公告)日：2006-10-12
申请号：JP2005095374
申请日：2005-03-29
申请人： Toshiba Corp , 株式会社東芝
发明人： KUBOTA HIROSHI , KUDO YUKI
IPC分类号： H01H9/54 , H01H33/00 , H01H33/59 , H02H9/02
CPC分类号： Y02E40/69
摘要： PROBLEM TO BE SOLVED: To provide a superconducting current limiter not blocking system coordination even at current limiting operation.
SOLUTION: The superconducting current limiter is composed of a first serial circuit including a first superconducting current limiting module and a first serial circuit closed at ordinary operation and opened at current limiting operation; a second serial circuit connected in parallel with the first serial circuit, including a second superconducting current limiting module and a second serial circuit opened at ordinary operation and closed at current limiting operation; and an external resistor connected in parallel with the first serial circuit and the second serial circuit.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供即使在限流操作时也不阻塞系统协调的超导限流器。解决方案：超导限流器由包括第一超导电流限制模块和第一串联电路的第一串联电路组成，在正常操作下闭合并在限流操作下断开; 与第一串联电路并联连接的第二串联电路，包括第二超导电流限制模块和在常规操作下打开并在限流操作时闭合的第二串联电路; 以及与第一串行电路和第二串行电路并联连接的外部电阻器。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2005063838A Optical device and organic el display device 审中-公开
标题翻译：光学装置和有机EL显示装置
公开(公告)号：JP2005063838A
公开(公告)日：2005-03-10
申请号：JP2003293111
申请日：2003-08-13
申请人： Toshiba Corp , Toshiba Matsushita Display Technology Co Ltd , 東芝松下ディスプレイテクノロジー株式会社 , 株式会社東芝
发明人： OKUYA SATOSHI , UEMURA TSUYOSHI , KUBOTA HIROSHI , OKADA NAOTADA , TONOTANI JUNICHI , SUZUKI HIROYUKI , OKAWA HIDEKI
IPC分类号： G02B5/18 , G09F9/30 , H01L27/32 , H01L51/50 , H01L51/52 , H05B33/00 , H05B33/02 , H05B33/12 , H05B33/14 , H05B33/24
CPC分类号： H01L51/5268 , H01L27/3211 , H01L27/3244 , H01L51/5275
摘要： PROBLEM TO BE SOLVED: To improve the luminous efficiency of a self-light-emitting device and an organic EL display device. SOLUTION: The optical device consists of a light-transmitting insulating layer 10, a back electrode 43 arranged at the back side of the light-transmitting insulating layer 10, a light-transmitting front electrode 41 intercalated between the light-transmitting insulating layer 10 and the back electrode 43, a self-light-emitting element 40 intercalated between the front electrode 41 and the back electrode 43 and equipped with a light-activated layer 42 including a light-emitting layer 42a, and a diffraction grating 30 arranged on a light path on which light emitted by the self-light-emitting layer 42a is irradiated from the light-activated layer 42 and reaches the light-transmitting insulating layer 10. A grating constant of the diffraction grating 30 is so set that a primary diffraction light generated as light of the maximum intensity out of the light emitted by the self-light-emitting element 40 and repeatedly reflecting and interfering at a further rear face side than the light-transmitting insulating layer 10 and passing on to a film face direction enters the diffraction grating 30 can be irradiated from the light-transmitting insulating layer 10. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提高自发光装置和有机EL显示装置的发光效率。解决方案：光学器件由透光绝缘层10，布置在透光绝缘层10背面的背面电极43，插入在透光绝缘层10之间的透光前电极41组成。层10和背面电极43，插入在前电极41和背电极43之间并配备有包括发光层42a的光活化层42的自发光元件40和布置成在自发光层42a发射的光被照射到光激发层42并到达透光绝缘层10的光路上。衍射光栅30的光栅常数设定为主作为由自发光元件40发出的光中的最大强度的光产生的衍射光，并且在比光tr的另一个背面侧反复反射和干涉可以从透光绝缘层10照射绝缘层10并且进入膜面方向进入衍射光栅30。版权所有（C）2005，JPO＆NCIPI

10. 发明专利

JP2004303811A Superconductive current limiting apparatus 有权
公开(公告)号：JP2004303811A
公开(公告)日：2004-10-28
申请号：JP2003092355
申请日：2003-03-28
申请人： Toshiba Corp , 株式会社東芝
发明人： KUBOTA HIROSHI , YOSHINO HISASHI
IPC分类号： H01L39/04 , H01L39/16 , H02H9/02
CPC分类号： Y02E40/69
摘要： PROBLEM TO BE SOLVED: To provide a compact superconductive current limiting apparatus which can suppress that generation of a great quantity of gas continues at the time of a current limiting operation.
SOLUTION: The superconductive current limiting apparatus is provided with a cryostat, an overcurrent suppression part which is arranged in the cryostat in the state that connection is performed to power grid and performs current limiting operation wherein currentcarrying of high current is suppressed by using superconductivity/usual state conduction dislocation of superconductor, cryogenic liquid which is accommodated in the cryostat and in which the overcurrent suppression part is dipped and cooled at the time of usual conduction, and a means which prevents the cryogenic liquid from coming into contact with the overcurrent suppression part at the time of usual state conduction dislocation of the overcurrent suppression part.
COPYRIGHT: (C)2005,JPO&NCIPI

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