专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2012034335A Power detector circuit and radio device 审中-公开
标题翻译：电力检测电路和无线电设备
公开(公告)号：JP2012034335A
公开(公告)日：2012-02-16
申请号：JP2011017110
申请日：2011-01-28
申请人： Toshiba Corp , 株式会社東芝
发明人： TERAGUCHI TAKAYUKI , KOTAKI YOSHIKATSU , HOSOI SHIGEHIRO , HASEGAWA MASAHIRO , NAKAGAWA TAKAHIRO
IPC分类号： H03D1/18 , H03F3/343
CPC分类号： G01R21/10
摘要： PROBLEM TO BE SOLVED: To provide a power detector circuit and a radio device of wide dynamic range.SOLUTION: A power detector circuit 1 includes a reference voltage generating circuit 2, a square signal generating circuit 3, a detection circuit 4, and an output circuit 5. The reference voltage generating circuit 2 is inputted with a bias voltage and generates a reference voltage. The square signal generating circuit 3 is inputted with a voltage obtained by multiplexing the bias voltage with a high frequency input voltage, and outputs a signal containing a voltage which is a square of the high frequency input voltage and a high frequency signal. The detection circuit 4 includes a first calculation amplification circuit which amplifies a difference between an average value of output signal and the reference voltage by way of a first low pass filter from the output signal from the square signal generating circuit 3 and outputs it as a control voltage, and a feedback transistor which feeds back a feedback current according to the control voltage to the square signal generating circuit. The electric power of high frequency is detected based on the feedback current. The output circuit 5 outputs a voltage according to the control voltage.
摘要翻译：要解决的问题：提供功率检测器电路和宽动态范围的无线电设备。解决方案：功率检测电路1包括参考电压产生电路2，方波信号发生电路3，检测电路4和输出电路5.参考电压产生电路2被输入偏置电压并产生参考电压。向平方信号发生电路3输入通过将偏置电压与高频输入电压进行多路复用而得到的电压，并输出包含高频输入电压和高频信号的平方的电压的信号。检测电路4包括：第一计算放大电路，通过来自方波信号发生电路3的输出信号，通过第一低通滤波器放大输出信号的平均值与参考电压之间的差值，并输出作为控制电压和反馈晶体管，反馈晶体管根据控制电压向平方信号发生电路反馈反馈电流。基于反馈电流检测高频电力。输出电路5根据控制电压输出电压。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2001274171A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001274171A
公开(公告)日：2001-10-05
申请号：JP2000086851
申请日：2000-03-27
申请人： TOSHIBA CORP
发明人： KOTAKI YOSHIKATSU
IPC分类号： H01L29/73 , H01L21/331 , H01L23/12
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which can be reduced in size by improving the high-frequency characteristic of the device by reducing the input-output inductance of the device. SOLUTION: This semiconductor device is provided with a semiconductor substrate 11, having an active first division 13 in which a collector layer 15, a base layer 16, and an emitter layer 17 are formed, at least one nonactive second division 14 electrically insulated from the division 13, and a collector electrode C, a base electrode B, and an emitter electrode E which are independently provided on the collector layer 15, base layer 16, and emitter layer 17, respectively. The base electrode B is electrically connected to the second division 14 of the substrate 11.

3. 发明专利

JPH04294621A LIMITER CIRCUIT 失效
公开(公告)号：JPH04294621A
公开(公告)日：1992-10-19
申请号：JP6035391
申请日：1991-03-25
申请人： TOSHIBA CORP
发明人： OZAKI JUICHI , KOTAKI YOSHIKATSU
IPC分类号： H03G11/00
摘要： PURPOSE:To suppress the dispersion in a limiting characteristic even when dispersion takes place in the matching state of transistor(TR) element input output by setting a bias point of the TR element in the vicinity of pinch-off. CONSTITUTION:When a microwave signal is fed to an input signal input terminal 12, a bias point moves on an AC load line periodically. As an input signal level increases, a drain current of a field effect TR (FET) 19 flows through a filter circuit 20 as a short-circuit current of a harmonic wave component of the input signal frequency. Thus, the matching state of the FET 11, for example, differs from each lot of a microwave monolithic circuit MMIC, since the DC component of the drain is large, the dispersion in the input signal level subject to limiting is suppressed, then the yield in the MMIC manufacture is improved.

4. 发明专利

JP2003109840A CAPACITOR AND ITS MANUFACTURING METHOD 审中-公开
公开(公告)号：JP2003109840A
公开(公告)日：2003-04-11
申请号：JP2001302681
申请日：2001-09-28
申请人： TOSHIBA CORP
发明人： KOTAKI YOSHIKATSU
IPC分类号： H01G4/255
摘要： PROBLEM TO BE SOLVED: To provide a capacitor capable of obtaining a prescribed capacity value and its manufacturing method. SOLUTION: In the capacitor provided with a dielectric board 11, an upper electrode 12 formed on one face of the dielectric board 11 and a lower electrode 13 formed on the other face of the dielectric board 11, a slit 14 without forming the upper electrode 12 is provided in an inside of the upper electrode 12.

5. 发明专利

JP2002280482A SEMICONDUCTOR DEVICE FOR MICROWAVE 失效
公开(公告)号：JP2002280482A
公开(公告)日：2002-09-27
申请号：JP2001078619
申请日：2001-03-19
申请人： TOSHIBA CORP
发明人： KOTAKI YOSHIKATSU
IPC分类号： H01L23/12 , H01L23/02
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device for a microwave having small unevenness of characteristics of elements and capable of improving operability and productivity. SOLUTION: The semiconductor device for the microwave comprises an electric elements such as bipolar transistors 17 or the like in a package 12. The semiconductor device further comprises a first semiconductor energizing substrate 18 having an upper electrode formed on the upper surface of the semiconductor substrate and a lower electrode formed on the lower surface, and a second semiconductor energizing substrate 19 having a lower electrode connected to a land pattern 16 or a ground pattern 15 in the package 12.

6. 发明专利

JP2001044717A MICROWAVE SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001044717A
公开(公告)日：2001-02-16
申请号：JP21531799
申请日：1999-07-29
申请人： TOSHIBA CORP
发明人： KOTAKI YOSHIKATSU
IPC分类号： H01L23/12 , H01L21/60 , H01P5/02 , H01P5/08 , H03F3/60
摘要： PROBLEM TO BE SOLVED: To provide a microwave semiconductor device that has an excellent electric characteristic and is easily miniaturized. SOLUTION: A 1st conductor film 20 is formed on a front side of a board 19 and a 2nd conductor film is formed on the rear side to configure a matching circuit 16. The microwave semiconductor device is provided with the matching circuit 16 and a strip line 15 connected to one side end of the 1st conductor film 20 configuring this matching circuit 16 with a plurality of metallic wires W. The width of one side end of the 1st conductor film 20 differs from the width of the other side end.

7. 发明专利

JPH11330085A POWER SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH11330085A
公开(公告)日：1999-11-30
申请号：JP12730598
申请日：1998-05-11
申请人： TOSHIBA CORP
发明人： KOTAKI YOSHIKATSU , KURODA MASAHIRO
IPC分类号： H01L29/417 , H01L21/331 , H01L21/338 , H01L29/73 , H01L29/812
摘要： PROBLEM TO BE SOLVED: To provide a power semiconductor device for microwave which is superior in power resistance. SOLUTION: In a wiring pattern with a bus line electrode 13 connecting finger electrodes 11, 12 and a pad electrode 14 projecting to a part of the bus line electrode 13, at least both ends of all the bus line electrodes are provided with a pad electrode and when a distance between pad electrode centers is (a) (mm) and one wavelength effect electric length is λg (mm), (a) is selected to satisfy a/λg

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式