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1. 发明申请

US20070169805A1 Substrate for thin-film solar cell, method for producing the same, and thin-film solar cell employing it 有权
标题翻译：薄膜太阳能电池用基板，其制造方法以及使用该薄膜太阳能电池的薄膜太阳能电池
公开(公告)号：US20070169805A1
公开(公告)日：2007-07-26
申请号：US10588708
申请日：2005-03-15
申请人： Toshiaki Sasaki , Yohei Koi , Yuko Tawada , Kenji Yamamoto
发明人： Toshiaki Sasaki , Yohei Koi , Yuko Tawada , Kenji Yamamoto
IPC分类号： H01L31/00
CPC分类号： H01L31/03921 , H01L31/022466 , H01L31/022483 , H01L31/02363 , H01L31/02366 , H01L31/1884 , Y02E10/50
摘要： An inexpensive substrate for thin film solar cells having improved performance of a thin film solar cell, and a manufacturing method thereof are provided by increasing light trapping effect due to effective increase in unevenness of a substrate for thin film solar cells. Furthermore, a thin film solar cell having improved performance using the substrate is provided. A substrate for thin film solar cells of the present invention has a transparent insulating substrate and a transparent electrode layer deposited thereon including at least zinc oxide (ZnO), the transparent insulating substrate has a fine surface unevenness having a root-mean-square deviation of the surface (RMS) 5 to 50 nm in an interface by a side of the transparent electrode layer, a projected area thereof consists of a curved surface, and furthermore a haze ratio or a ratio of a diffuse transmittance to a total transmittance as an index of unevenness of a substrate may be set at not less than 20% measured using a C light source. And thereby light trapping effect may effectively occur to improve performance of the thin film solar cell.
摘要翻译：通过提高薄膜太阳能电池基板的不均匀性的增加的光捕获效果，提供薄膜太阳能电池的性能提高的薄膜太阳能电池的便宜的基板，及其制造方法。此外，提供了使用该基板具有改进的性能的薄膜太阳能电池。本发明的薄膜太阳能电池用基板具有透明绝缘性基板和至少含有氧化锌（ZnO）的淀积的透明电极层，透明绝缘性基板具有平均值偏差为通过透明电极层的一侧的界面中的5〜50nm的面（RMS），其投影面积由曲面构成，此外，雾度比或漫透射率与总透射率的比率为指标可以将基板的不平坦度设定为使用C光源测量的不小于20％。从而可以有效地发生光捕获效应，以改善薄膜太阳能电池的性能。

2. 发明授权

US07781668B2 Substrate for thin-film solar cell, method for producing the same, and thin-film solar cell employing it 有权
标题翻译：薄膜太阳能电池用基板，其制造方法以及使用该薄膜太阳能电池的薄膜太阳能电池
公开(公告)号：US07781668B2
公开(公告)日：2010-08-24
申请号：US10588708
申请日：2005-03-15
申请人： Toshiaki Sasaki , Yohei Koi , Yuko Tawada , Kenji Yamamoto
发明人： Toshiaki Sasaki , Yohei Koi , Yuko Tawada , Kenji Yamamoto
IPC分类号： H01L25/00
CPC分类号： H01L31/03921 , H01L31/022466 , H01L31/022483 , H01L31/02363 , H01L31/02366 , H01L31/1884 , Y02E10/50
摘要： An inexpensive substrate for thin film solar cells having improved performance of a thin film solar cell, and a manufacturing method thereof are provided by increasing light trapping effect due to effective increase in unevenness of a substrate for thin film solar cells. Furthermore, a thin film solar cell having improved performance using the substrate is provided. A substrate for thin film solar cells of the present invention has a transparent insulating substrate and a transparent electrode layer deposited thereon including at least zinc oxide (ZnO), the transparent insulating substrate has a fine surface unevenness having a root-mean-square deviation of the surface (RMS) 5 to 50 nm in an interface by a side of the transparent electrode layer, a projected area thereof consists of a curved surface, and furthermore a haze ratio or a ratio of a diffuse transmittance to a total transmittance as an index of unevenness of a substrate may be set at not less than 20% measured using a C light source. And thereby light trapping effect may effectively occur to improve performance of the thin film solar cell.
摘要翻译：通过提高薄膜太阳能电池基板的不均匀性的增加的光捕获效果，提供薄膜太阳能电池的性能提高的薄膜太阳能电池的便宜的基板，及其制造方法。此外，提供了使用该基板具有改进的性能的薄膜太阳能电池。本发明的薄膜太阳能电池用基板具有透明绝缘性基板和至少含有氧化锌（ZnO）的淀积的透明电极层，透明绝缘性基板具有平均值偏差为通过透明电极层的一侧的界面中的5〜50nm的面（RMS），其投影面积由曲面构成，此外，雾度比或漫透射率与总透射率的比率为指标可以将基板的不平坦度设定为使用C光源测量的不小于20％。从而可以有效地发生光捕获效应，以改善薄膜太阳能电池的性能。

3. 发明申请

US20080185036A1 Substrate For Thin Film Photoelectric Conversion Device and Thin Film Photoelectric Conversion Device Including the Same 审中-公开
标题翻译：薄膜光电转换装置及薄膜光电转换装置用基板
公开(公告)号：US20080185036A1
公开(公告)日：2008-08-07
申请号：US11791754
申请日：2005-11-09
申请人： Toshiaki Sasaki , Yohei Koi , Yuko Tawada , Takashi Suezaki , Kenji Yamamoto
发明人： Toshiaki Sasaki , Yohei Koi , Yuko Tawada , Takashi Suezaki , Kenji Yamamoto
IPC分类号： H01L31/04
CPC分类号： H01L31/076 , H01L31/02168 , H01L31/03529 , H01L31/0392 , Y02E10/548
摘要： An object of the present invention is to provide a substrate for a thin film photoelectric conversion device, in which its properties are not deteriorated when its surface unevenness is effectively increased, and then provide the thin film photoelectric conversion device having its performance improved by using the substrate.According to the present invention, by setting the surface area ratio of a transparent electrode layer in the substrate for the thin film photoelectric conversion device to at least 55% and at most 95%, the surface unevenness are effectively increased to increase the optical confinement effect, while deterioration in properties due to sharpening of the surface level variation is suppressed, whereby making it possible to provide a substrate for a thin film photoelectric conversion device, which can enhance output properties of the thin film photoelectric conversion device.
摘要翻译：本发明的目的是提供一种用于薄膜光电转换装置的基板，其特征在其表面不均匀性有效提高时不劣化，然后提供其性能得到改善的薄膜光电转换装置基质。根据本发明，通过将薄膜光电转换元件用基板中的透明电极层的表面积比设定为至少55％以上且95％以下，能够有效地增加表面不均匀性，提高光学限制效果，同时由于表面水平变化的锐化而导致的性能劣化被抑制，从而可以提供可以提高薄膜光电转换装置的输出特性的薄膜光电转换装置用基板。

4. 发明授权

US07847186B2 Silicon based thin film solar cell 有权
标题翻译：硅基薄膜太阳能电池
公开(公告)号：US07847186B2
公开(公告)日：2010-12-07
申请号：US10563009
申请日：2004-07-12
申请人： Toru Sawada , Yohei Koi , Toshiaki Sasaki , Masashi Yoshimi , Masahiro Goto , Kenji Yamamoto
发明人： Toru Sawada , Yohei Koi , Toshiaki Sasaki , Masashi Yoshimi , Masahiro Goto , Kenji Yamamoto
IPC分类号： H01L31/00
CPC分类号： H01L31/077 , H01L31/056 , H01L31/075 , H01L31/076 , Y02E10/52 , Y02E10/548
摘要： According to the present invention, sufficient light trapping effect can be exhibited and series resistance can be kept small, by sequentially forming a silicon based low refractive index layer and a thin silicon based interface layer on a backside of a photoelectric conversion layer observed from a light incident side, and as a result a silicon based thin film solar cell may be provided efficiently and at low cost.
摘要翻译：根据本发明，通过从光线观察到的光电转换层的背面顺序地形成硅基低折射率层和薄硅基界面层，可以发挥足够的光捕获效果并且串联电阻较小因此，可以以低成本有效地提供硅基薄膜太阳能电池。

5. 发明授权

US07550665B2 Stacked photoelectric converter 有权
标题翻译：堆叠光电转换器
公开(公告)号：US07550665B2
公开(公告)日：2009-06-23
申请号：US10530283
申请日：2004-07-15
申请人： Toshiaki Sasaki , Yohei Koi , Kenji Yamamoto , Masashi Yoshimi , Mitsuru Ichikawa
发明人： Toshiaki Sasaki , Yohei Koi , Kenji Yamamoto , Masashi Yoshimi , Mitsuru Ichikawa
IPC分类号： H01L31/00 , H02N6/00
CPC分类号： H01L31/077 , H01L31/056 , H01L31/076 , Y02E10/52 , Y02E10/548
摘要： In a stacked-layer type photoelectric conversion device, a plurality of photoelectric conversion units are stacked on a substrate, each of which includes a one conductivity-type layer, a photoelectric conversion layer of substantially intrinsic semiconductor and an opposite conductivity-type layer in this order from a light-incident side. At least one of the opposite conductivity-type layer in a front photoelectric conversion unit arranged relatively closer to the light-incident side and the one conductivity-type layer in a back photoelectric conversion unit arranged adjacent to the front photoelectric conversion unit includes a silicon composite layer at least in a part thereof. The silicon composite layer has a thickness of more than 20 nm and less than 130 nm and an oxygen concentration of more than 25 atomic % and less than 60 atomic %, and includes silicon-rich phase parts in an amorphous alloy phase of silicon and oxygen.
摘要翻译：在堆叠层型光电转换装置中，在基板上层叠多个光电转换单元，每个基板包括一个导电型层，本质上为半导体的光电转换层和相反的导电型层从光线一方的命令。在与前光电转换单元相邻布置的背光电转换单元中相对靠近光入射侧的前光电转换单元中的至少一个导电类型层和一个导电型层中的至少一个包括硅复合物至少在其一部分。硅复合层的厚度大于20nm且小于130nm，氧浓度大于25原子％且小于60原子％，并且包括在硅和氧的非晶合金相中的富硅相部分。

6. 发明申请

US20060043517A1 Stacked photoelectric converter 有权
公开(公告)号：US20060043517A1
公开(公告)日：2006-03-02
申请号：US10530283
申请日：2004-07-15
申请人： Toshiaki Sasaki , Yohei Koi , Kenji Yamamoto , Masashi Yoshimi , Mitsuru Ichikawa
发明人： Toshiaki Sasaki , Yohei Koi , Kenji Yamamoto , Masashi Yoshimi , Mitsuru Ichikawa
IPC分类号： H01L31/105
CPC分类号： H01L31/077 , H01L31/056 , H01L31/076 , Y02E10/52 , Y02E10/548
摘要： In a stacked-layer type photoelectric conversion device, a plurality of photoelectric conversion units are stacked on a substrate, each of which includes a one conductivity-type layer, a photoelectric conversion layer of substantially intrinsic semiconductor and an opposite conductivity-type layer in this order from a light-incident side. At least one of the opposite conductivity-type layer in a front photoelectric conversion unit arranged relatively closer to the light-incident side and the one conductivity-type layer in a back photoelectric conversion unit arranged adjacent to the front photoelectric conversion unit includes a silicon composite layer at least in a part thereof. The silicon composite layer has a thickness of more than 20 nm and less than 130 nm and an oxygen concentration of more than 25 atomic % and less than 60 atomic %, and includes silicon-rich phase parts in an amorphous alloy phase of silicon and oxygen.

7. 发明授权

US07678992B2 Thin-film photoelectric converter 有权
标题翻译：薄膜光电转换器
公开(公告)号：US07678992B2
公开(公告)日：2010-03-16
申请号：US10543516
申请日：2004-05-28
申请人： Takashi Suezaki , Masashi Yoshimi , Toshiaki Sasaki , Yuko Tawada , Kenji Yamamoto
发明人： Takashi Suezaki , Masashi Yoshimi , Toshiaki Sasaki , Yuko Tawada , Kenji Yamamoto
IPC分类号： H01L31/00
CPC分类号： H01L31/076 , H01L31/046 , Y02E10/548
摘要： A thin film photoelectric converter, especially an integrated thin film photoelectric converter having improved photoelectric conversion efficiency is provided by controlling an open-circuit voltage and a fill factor so as not be small in a thin film photoelectric converter including a crystalline silicon photoelectric conversion unit. The thin film photoelectric converter by the present invention has at least a transparent electrode film, a crystalline silicon photoelectric conversion unit, and a back electrode film formed sequentially on one principal surface of a transparent substrate, and the converter has a whitish discoloring area on a part of a surface of the converter after formation of the crystalline silicon photoelectric conversion unit. A percentage of dimensions of the whitish discoloring area preferably is not more than 5% of a dimension of the photoelectric conversion area. A thin film photoelectric converter of the present invention is preferably an integrated thin film photoelectric converter.
摘要翻译：通过在包括晶体硅光电转换单元的薄膜光电转换器中控制开路电压和填充因子以不小而提供薄膜光电转换器，特别是具有改进的光电转换效率的集成薄膜光电转换器。本发明的薄膜光电转换器至少在透明基板的一个主表面上依次形成透明电极膜，晶体硅光电转换单元和背面电极膜，并且转换器具有白色变色区域形成晶体硅光电转换单元后的转换器表面的一部分。白色变色区域的尺寸的百分比优选不大于光电转换区域的尺寸的5％。本发明的薄膜光电转换器优选为集成薄膜光电转换器。

8. 发明申请

US20060097259A1 Thin-film photoelectric converter 有权
标题翻译：薄膜光电转换器
公开(公告)号：US20060097259A1
公开(公告)日：2006-05-11
申请号：US10543516
申请日：2004-05-28
申请人： Takashi Suezaki , Masashi Yoshimi , Toshiaki Sasaki , Yuko Tawada , Kenji Yamamoto
发明人： Takashi Suezaki , Masashi Yoshimi , Toshiaki Sasaki , Yuko Tawada , Kenji Yamamoto
IPC分类号： H01L29/76 , H01L29/10
CPC分类号： H01L31/076 , H01L31/046 , Y02E10/548
摘要： A thin film photoelectric converter, especially an integrated thin film photoelectric converter having improved photoelectric conversion efficiency is provided by controlling an open-circuit voltage and a fill factor so as not be small in a thin film photoelectric converter including a crystalline silicon photoelectric conversion unit. The thin film photoelectric converter by the present invention has at least a transparent electrode film, a crystalline silicon photoelectric conversion unit, and a back electrode film formed sequentially on one principal surface of a transparent substrate, and the converter has a whitish discoloring area on a part of a surface of the converter after formation of the crystalline silicon photoelectric conversion unit. A percentage of dimensions of the whitish discoloring area preferably is not more than 5% of a dimension of the photoelectric conversion area. A thin film photoelectric converter of the present invention is preferably an integrated thin film photoelectric converter.
摘要翻译：通过在包括晶体硅光电转换单元的薄膜光电转换器中控制开路电压和填充因子以不小而提供薄膜光电转换器，特别是具有改进的光电转换效率的集成薄膜光电转换器。本发明的薄膜光电转换器至少在透明基板的一个主表面上依次形成透明电极膜，晶体硅光电转换单元和背面电极膜，并且转换器具有白色变色区域形成晶体硅光电转换单元后的转换器表面的一部分。白色变色区域的尺寸的百分比优选不大于光电转换区域的尺寸的5％。本发明的薄膜光电转换器优选为集成薄膜光电转换器。

9. 发明申请

US20090165853A1 Stacked-Type Photoelectric Conversion Device 有权
标题翻译：堆叠式光电转换装置
公开(公告)号：US20090165853A1
公开(公告)日：2009-07-02
申请号：US12087067
申请日：2006-12-19
申请人： Toru Sawada , Yuko Tawada , Takashi Suezaki , Kenji Yamamoto
发明人： Toru Sawada , Yuko Tawada , Takashi Suezaki , Kenji Yamamoto
IPC分类号： H01L31/00
CPC分类号： H01L31/076 , H01L31/046 , Y02E10/548
摘要： The present invention makes it possible to provide a stacked-type thin-film photoelectric conversion device having high photostability, at a high yield rate and significantly reduced production costs. In a stacked-type photoelectric conversion device having an amorphous silicon-based photoelectric conversion unit and a crystalline silicon-based photoelectric conversion unit stacked thereon or vice versa, an amorphous photoelectric conversion layer included in the amorphous photoelectric conversion unit has a thickness of at least 0.03 μm and less than 0.17 μm, a crystalline photoelectric conversion layer included in the crystalline photoelectric conversion unit has a thickness of at least 0.2 μm and less than 1.0 μm, and a silicon oxide layer of a first conductivity type included in the amorphous photoelectric conversion unit and a silicon layer of a second conductivity type included in the crystalline photoelectric conversion unit make a junction.
摘要翻译：本发明使得可以以高产率提供具有高光稳定性的堆叠型薄膜光电转换装置并显着降低生产成本。在具有非晶硅基光电转换单元和层叠在其上的晶体硅基光电转换单元的叠层型光电转换装置中，反之亦然，非晶型光电转换单元中包含的非晶型光电转换层至少具有至少 0.03μm以上且小于0.17μm的结晶光电转换层的结晶光电转换层的厚度为0.2μm以上且小于1.0μm，并且包含在非晶光电转换中的第一导电类型的氧化硅层单元和包括在晶体光电转换单元中的第二导电类型的硅层形成结。

10. 发明授权

US07851695B2 Stacked-type photoelectric conversion device 有权
标题翻译：堆叠式光电转换装置
公开(公告)号：US07851695B2
公开(公告)日：2010-12-14
申请号：US12087067
申请日：2006-12-19
申请人： Toru Sawada , Yuko Tawada , Takashi Suezaki , Kenji Yamamoto
发明人： Toru Sawada , Yuko Tawada , Takashi Suezaki , Kenji Yamamoto
IPC分类号： H01L31/00 , H02N6/00
CPC分类号： H01L31/076 , H01L31/046 , Y02E10/548
摘要： The present invention makes it possible to provide a stacked-type thin-film photoelectric conversion device having high photostability, at a high yield rate and significantly reduced production costs. In a stacked-type photoelectric conversion device having an amorphous silicon-based photoelectric conversion unit and a crystalline silicon-based photoelectric conversion unit stacked thereon or vice versa, an amorphous photoelectric conversion layer included in the amorphous photoelectric conversion unit has a thickness of at least 0.03 μm and less than 0.17 μm, a crystalline photoelectric conversion layer included in the crystalline photoelectric conversion unit has a thickness of at least 0.2 μm and less than 1.0 μm, and a silicon oxide layer of a first conductivity type included in the amorphous photoelectric conversion unit and a silicon layer of a second conductivity type included in the crystalline photoelectric conversion unit make a junction.
摘要翻译：本发明使得可以以高产率提供具有高光稳定性的堆叠型薄膜光电转换装置并显着降低生产成本。在具有非晶硅基光电转换单元和层叠在其上的晶体硅基光电转换单元的叠层型光电转换装置中，反之亦然，非晶型光电转换单元中包含的非晶型光电转换层至少具有至少 0.03μm以上且小于0.17μm的结晶光电转换层的结晶光电转换层的厚度为0.2μm以上且小于1.0μm，并且具有第一导电类型的氧化硅层包括在非晶形光电转换单元和包括在晶体光电转换单元中的第二导电类型的硅层形成结。

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