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    • 1. 发明申请
    • Holding Member, Mounting Structure Having The Holding Member Mounted In Electric Circuit Board, and Electronic Part Having the Holding Member
    • 保持构件,具有安装在电路板中的保持构件的安装结构以及具有保持构件的电子部件
    • US20100288546A1
    • 2010-11-18
    • US12845363
    • 2010-07-28
    • Toshiaki Hayashi
    • Toshiaki Hayashi
    • H05K1/18H05K1/00
    • H01R12/7064H01R12/58H01R12/707H05K7/12
    • A holding member includes a base section, a pair of leg sections, and inclined sections positioned along tip portions of the pair of leg sections. The base section is plate-like shape. The pair of leg sections extend in approximately equal directions to each other, and are configured to fit into a through hole of an electronic circuit board and contact an inner surface of the through hole. The inclined sections are positioned along respective tip portions of the pair of leg sections and extend in directions approaching each other and facing in opposite directions, while being inclined relative to a width direction of the base section. Furthermore, the inclined sections contact and press each other so that a tip of at least one of the pair of leg sections advances along the axis which is angled relative to the width direction of the base section when the pair of leg sections are pushed into the through hole and contact the inner surface of the through hole.
    • 保持构件包括基部,一对腿部和沿着该对腿部的尖端部分定位的倾斜部。 基部是板状的。 所述一对腿部部分在大致相同的方向上相互延伸,并且被配置成装配到电子电路板的通孔中并与通孔的内表面接触。 倾斜部分沿着该对腿部的各个尖端部分定位,并且在相对于基部的宽度方向倾斜的同时相对于彼此接近并且相反方向的方向延伸。 此外,倾斜部分接触并相互按压,使得一对腿部部分中的至少一个的尖端沿着相对于基部的宽度方向成角度的轴线前进,当一对腿部被推入 通孔并与通孔的内表面接触。
    • 3. 发明授权
    • Squib-type electrical connector with multiple engagement means
    • 具有多个接合装置的柱状电连接器
    • US07303423B2
    • 2007-12-04
    • US11370969
    • 2006-03-08
    • Toshiaki HayashiAtsushi NishidaMasato Minakata
    • Toshiaki HayashiAtsushi NishidaMasato Minakata
    • H01R13/62
    • H01R13/6272H01R13/641H01R13/7031
    • An electrical connector includes a connector housing having a contact engaging section with contacts which engage mating contacts, and a wire holder holding wires connected to the contacts. The connector cover is capable of moving between partially engaged position and fully engaged position. The partially engaged position is the position in which a rear end of the wire holder is housed in and the fully engaged position is the position in which the rear end of the wire holder projects from a rear end opening. The connector housing has a first engaging section engaging a mating connector in the partially engaged position. The connector cover has a second engaging section engaging the first engaging section and restraining disengagement of the first engaging section from the mating connector in the fully engaged position.
    • 电连接器包括连接器壳体,该连接器壳体具有触头接合部分,该触头接合部分具有接合配合触点的触点,以及保持连接到该触点的导线的线 连接器盖能够在部分接合位置和完全接合位置之间移动。 部分接合位置是电线保持器的后端容纳在其中的位置,并且完全接合位置是线保持器的后端从后端开口突出的位置。 连接器壳体具有在部分接合位置接合配合连接器的第一接合部分。 连接器盖具有接合第一接合部分的第二接合部分,并且将第一接合部分与匹配连接器在完全接合位置的约束分离。
    • 8. 发明授权
    • Ferromagnetic double quantum well tunnel magneto-resistance device
    • 铁磁双量子阱隧道磁阻器件
    • US06456523B1
    • 2002-09-24
    • US09762804
    • 2001-02-13
    • Masaaki TanakaToshiaki Hayashi
    • Masaaki TanakaToshiaki Hayashi
    • G11C1100
    • H01L43/08B82Y10/00B82Y25/00G01R33/06G01R33/093G01R33/098G11B5/3903G11B5/3909G11B2005/3996G11C11/16H01F10/3213H01F10/3254H01F10/3281H01L27/228
    • A ferromagnetic double quantum well tunneling magnetoresistance device is disclosed that utilizes a two-dimensional electron (positive hole) system to obtain an infinitely great magnetoresistance ratio. Also disclosed are a sensitive magnetic sensor and a nonvolatile storage device derived from that device. In structural terms of the device, a first and a second quantum well layer of ferromagnetic material (4, 8) in each of which the quantum confinement for carriers is established in a two-dimensional electron (positive hole) state are each sandwiched between a pair of barrier layers of nonmagnetic material (2, 6, 10) through which the carriers can tunnel. The first and second quantum well layers (4, 8) have a difference in coercive force so that when an external magnetic field is applied thereto only one of them may be reversed in the direction of magnetization. As a result, if magnetizations of the two quantum wells are parallel to each other, tunneling is allowed to occur, and if they are antiparallel to each other, tunneling is inhibited. A infinitely great tunneling magnetoresistance ratio is thereby obtained.
    • 公开了一种利用二维电子(空穴)系统获得无限大的磁阻比的铁磁双量子阱隧穿磁阻器件。 还公开了一种敏感磁传感器和从该装置衍生的非易失性存储装置。 在器件的结构方面,在二维电子(空穴)状态下建立载流子的量子限制的铁磁材料(4,8)的第一和第二量子阱层分别夹在 一对非磁性材料(2,6,10)的阻挡层,载体可穿过这些阻挡层。 第一和第二量子阱层(4,8)具有矫顽力的差异,使得当施加外部磁场时,只有其中一个可以在磁化方向上反转。 结果,如果两个量子阱的磁化彼此平行,则允许发生隧穿,并且如果它们彼此反平行,则隧道被抑制。 由此获得无限大的隧道磁阻比。