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1. 发明授权

US08283252B2 Method of manufacturing semiconductor wafer 有权
标题翻译：制造半导体晶片的方法
公开(公告)号：US08283252B2
公开(公告)日：2012-10-09
申请号：US12585400
申请日：2009-09-14
申请人： Toru Taniguchi , Etsuro Morita , Satoshi Matagawa , Seiji Harada , Isoroku Ono , Mitsuhiro Endo , Fumihiko Yoshida
发明人： Toru Taniguchi , Etsuro Morita , Satoshi Matagawa , Seiji Harada , Isoroku Ono , Mitsuhiro Endo , Fumihiko Yoshida
IPC分类号： H01L21/302
CPC分类号： B24B37/08 , B24B37/042 , B24B37/24 , B24B37/28
摘要： A method of manufacturing a semiconductor wafer, including a step of differentiating the glossiness of a front surface from that of a rear surface of the wafer by holding the semiconductor wafer in a wafer holding hole formed in a carrier plate, and simultaneously polishing a front and back surface of said semiconductor wafer by driving said carrier plate to make a circular motion associated with no rotation on its own axis within a plane parallel with a surface of said carrier plate between a pair of polishing members disposed to face to each other, by using an abrasive body with a semiconductor wafer sink rate different in polishing from that of an abrasive body for one of a polishing member on an upper surface plate and a polishing member on a lower surface plate so as to simultaneously polish both the front and rear surfaces of the semiconductor wafer, or differentiating by differentiating the rotating speed of the upper surface plate from that of the lower surface plate.
摘要翻译：一种制造半导体晶片的方法，包括通过将半导体晶片保持在形成在载板上的晶片保持孔中，将前表面的光泽度与晶片的后表面的光泽度区分开的步骤，所述半导体晶片的后表面通过驱动所述承载板而形成圆周运动，所述圆周运动与平行于所述承载板的表面的平面之间在其自身轴线上不旋转，所述平面布置在彼此面对的一对抛光构件之间，通过使用具有与用于上表面板上的抛光构件和下表面板上的抛光构件之一的研磨体的抛光不同的半导体晶片沉降速率的研磨体，以同时抛光前表面和后表面半导体晶片，或者通过区分上表面板的转速与下表面板的转速来区分。

2. 发明申请

US20100009605A1 Method of manufacturing semiconductor wafer 有权
标题翻译：制造半导体晶片的方法
公开(公告)号：US20100009605A1
公开(公告)日：2010-01-14
申请号：US12585400
申请日：2009-09-14
申请人： Toru Taniguchi , Etsuro Morita , Satoshi Matagawa , Seiji Harada , Isoroku Ono , Mitsuhiro Endo , Fumihiko Yoshida
发明人： Toru Taniguchi , Etsuro Morita , Satoshi Matagawa , Seiji Harada , Isoroku Ono , Mitsuhiro Endo , Fumihiko Yoshida
IPC分类号： H01L21/463
CPC分类号： B24B37/08 , B24B37/042 , B24B37/24 , B24B37/28
摘要： A method of manufacturing a semiconductor wafer, including a step of differentiating the glossiness of a front surface from that of a rear surface of the wafer by holding the semiconductor wafer in a wafer holding hole formed in a carrier plate, and simultaneously polishing a front and back surface of said semiconductor wafer by driving said carrier plate to make a circular motion associated with no rotation on its own axis within a plane parallel with a surface of said carrier plate between a pair of polishing members disposed to face to each other, by using an abrasive body with a semiconductor wafer sink rate different in polishing from that of an abrasive body for one of a polishing member on an upper surface plate and a polishing member on a lower surface plate so as to simultaneously polish both the front and rear surfaces of the semiconductor wafer, or differentiating by differentiating the rotating speed of the upper surface plate from that of the lower surface plate.
摘要翻译：一种制造半导体晶片的方法，包括通过将半导体晶片保持在形成在载板上的晶片保持孔中，将前表面的光泽度与晶片的后表面的光泽度区分开的步骤，所述半导体晶片的后表面通过驱动所述承载板而形成圆周运动，所述圆周运动与平行于所述承载板的表面的平面之间在其自身轴线上不旋转，所述平面布置在彼此面对的一对抛光构件之间，通过使用具有与用于上表面板上的抛光构件和下表面板上的抛光构件之一的研磨体的抛光不同的半导体晶片沉降速率的研磨体，以同时抛光前表面和后表面半导体晶片，或者通过区分上表面板的转速与下表面板的转速来区分。

3. 发明授权

US07589023B2 Method of manufacturing semiconductor wafer 有权
标题翻译：制造半导体晶片的方法
公开(公告)号：US07589023B2
公开(公告)日：2009-09-15
申请号：US10258282
申请日：2001-04-23
申请人： Toru Taniguchi , Etsuro Morita , Satoshi Matagawa , Seiji Harada , Isoroku Ono , Mitsuhiro Endo , Fumihiko Yoshida
发明人： Toru Taniguchi , Etsuro Morita , Satoshi Matagawa , Seiji Harada , Isoroku Ono , Mitsuhiro Endo , Fumihiko Yoshida
IPC分类号： H01L21/302
CPC分类号： B24B37/08 , B24B37/042 , B24B37/24 , B24B37/28
摘要： A method of manufacturing a semiconductor wafer, comprising the step of differentiating the glossiness of a front surface from that of a rear surface of the wafer by using an abrasive cloth with a semiconductor wafer sink rate different in polishing from that of the other abrasive cloth for one of a polishing cloth (14) on an upper surface plate (12) and a polishing cloth (15) on a lower surface plate (13) so as to simultaneously polish both the front and rear surfaces of the semiconductor wafer (W), or differentiating by differentiating the rotating speed of the upper surface plate from that of the lower surface plate.
摘要翻译：一种半导体晶片的制造方法，其特征在于，通过使用具有与其它研磨布不同的半导体晶片沉降速率的研磨布，将前表面的光泽度与晶片的后表面的光泽度区分开的步骤，在上表面板（12）上的抛光布（14）和下表面板（13）上的抛光布（15）之一，以同时抛光半导体晶片（W）的前表面和后表面，或通过区分上表面板的转速与下表面板的转速来区分。

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