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    • 1. 发明授权
    • Apparatus and method for generating memory access signals, and memory accessed using said signals
    • 用于产生存储器访问信号的装置和方法,以及使用所述信号访问的存储器
    • US06944088B2
    • 2005-09-13
    • US10262500
    • 2002-09-30
    • Toru AsanoSang Hoo DhongJoel Abraham SilbermanOsamu Takahashi
    • Toru AsanoSang Hoo DhongJoel Abraham SilbermanOsamu Takahashi
    • G06F9/355G06F12/08G11C8/10G11C8/00
    • G06F9/355G06F12/0895G11C8/10
    • A sum decoder is disclosed including multiple sum predecoders, a carry generator, and multiple rotate logic units. Each sum predecoder receives multiple bit pairs of non-overlapping segments of a first and second address signal, and produces an input signal dependent upon the bit pairs. The carry generator receives a lower-ordered portion of the first and second address signals, and generates multiple carry signals each corresponding to a different one of the sum predecoders. Each rotate logic unit receives the input signal produced by a corresponding sum predecoders and a corresponding one of the carry signals, rotates the bits of the input signal dependent upon the carry signal, and produces either the input signal or the rotated input signal as an output signal. A memory is described including the sum decoder, a final decode block, and a data array. The final decode block performs logical operations on the output signals of the sum decoder to produce selection signals. Each of the selection signals activates a word line of the data array. A method is disclosed for producing signals for accessing a memory. Highest ordered portions of the first and second address signals are divided into multiple non-overlapping segments. An input signal (i.e., an I term) is generated for each of the segments, as is a carry signal. For each of the segments, when the corresponding carry signal is set, the corresponding I term is rotated one bit position. The I terms are produced as the signals.
    • 公开了一种和解解码器,其包括多个和预测解码器,进位发生器和多个旋转逻辑单元。 每个和预解码器接收第一和第二地址信号的非重叠段的多个比特对,并且根据比特对产生输入信号。 进位发生器接收第一和第二地址信号的低阶部分,并且产生每个对应于预测解码器中的不同一个的多个进位信号。 每个旋转逻辑单元接收由相应的和预测码器和相应的一个进位信号产生的输入信号,根据进位信号旋转输入信号的位,并产生输入信号或旋转的输入信号作为输出 信号。 描述包括和解码器,最终解码块和数据阵列的存储器。 最终解码块对和解码器的输出信号执行逻辑运算以产生选择信号。 每个选择信号激活数据阵列的字线。 公开了一种用于产生访问存储器的信号的方法。 第一和第二地址信号的最高有序部分被分成多个非重叠段。 对于每个段产生输入信号(即I项),进位信号也是如此。 对于每个段,当相应的进位信号被设置时,对应的I项被旋转一位位置。 我的条款是作为信号产生的。
    • 4. 发明授权
    • Subarray control and subarray cell access in a memory module
    • 存储器模块中的子阵列控制和子阵列单元访问
    • US06850456B2
    • 2005-02-01
    • US10606585
    • 2003-06-26
    • Toru AsanoSang Hoo DhongTakaaki NakazatoOsamu Takahashi
    • Toru AsanoSang Hoo DhongTakaaki NakazatoOsamu Takahashi
    • G11C7/22G11C8/08G11C8/18G11C8/00
    • G11C7/22G11C8/08G11C8/18
    • The present invention provides a subarray control apparatus and method. The subarray control includes a wordline driver configured to generate a wordline activation signal, and a write/read control signal generator configured to generate a write/read enable signal. In addition, the subarray control includes a timing generator configured to generate a wordline timing signal input to the wordline driver and a write/read timing signal input to the write/read control signal generator. The wordline activation signal is based on enable data captured by a first transparent latching circuit and the wordline timing signal generated within the subarray. The write/read enable signal is based on enable data captured by a second transparent latching circuit and the write/read timing signal generated within the subarray. Accessing subarray cells in a memory module and a memory module incorporating the subarray control are also disclosed.
    • 本发明提供了一种子阵列控制装置和方法。 子阵列控制包括被配置为产生字线激活信号的字线驱动器,以及被配置为产生写/读使能信号的写/读控制信号发生器。 此外,子阵列控制包括定时发生器,其被配置为产生输入到字线驱动器的字线定时信号和输入到写/读控制信号发生器的写/读定时信号。 字线激活信号基于由第一透明锁存电路捕获的使能数据和在子阵列内生成的字线定时信号。 写/读使能信号基于由第二透明锁存电路捕获的使能数据和在子阵列内生成的写/读定时信号。 还公开了存储器模块中的子阵列单元和并入子阵列控制的存储器模块。
    • 8. 发明授权
    • SOI sense amplifier with cross-coupled body terminal
    • 具有交叉耦合体端子的SOI读出放大器
    • US07053668B2
    • 2006-05-30
    • US10852863
    • 2004-05-25
    • Takaaki NakazatoToru AsanoOsamu TakahashiSang Dhong
    • Takaaki NakazatoToru AsanoOsamu TakahashiSang Dhong
    • G01R19/00G11C7/00H03F3/45
    • H03K3/012G11C7/065H03K3/356139
    • Systems and methods for increasing the amount of current that can flow through the data line pull-down transistors in a sense amplifier by tying the bodies of these transistors to a voltage other than ground. In one embodiment, the bodies of the data line pull-down transistors in a sense amplifier are tied to the intermediate nodes on the opposing side of the sense amplifier to increase the current flow through the data line pull-down transistors, and also to reduce the voltage at the intermediate node that will be pulled low by the action of the bit line transistors. In one embodiment, the sense amplifier also includes pre-charge circuits which pre-charge the intermediate nodes to a predetermined voltage that is not reduced by the threshold voltage of the pull-down transistors.
    • 用于通过将这些晶体管的主体连接到除地之外的电压来增加可以流过读出放大器中的数据线下拉晶体管的电流量的系统和方法。 在一个实施例中,读出放大器中的数据线下拉晶体管的主体被连接到读出放大器的相对侧上的中间节点,以增加通过数据线下拉晶体管的电流,并且还减少 通过位线晶体管的动作将中间节点处的电压拉低。 在一个实施例中,读出放大器还包括将中间节点预充电到未被下拉晶体管的阈值电压降低的预定电压的预充电电路。
    • 9. 发明申请
    • SOI sense amplifier with pre-charge
    • 具有预充电的SOI读出放大器
    • US20050264322A1
    • 2005-12-01
    • US10852868
    • 2004-05-25
    • Takaaki NakazatoToru AsanoOsamu TakahashiSang Dhong
    • Takaaki NakazatoToru AsanoOsamu TakahashiSang Dhong
    • G11C11/419G11C7/06G11C7/12H03F3/45H03K3/356H03K19/0948
    • G11C7/065G11C7/12H03F3/45183H03F2203/45318
    • Systems and methods for pre-charging opposing nodes in a sense amplifier to substantially the same voltage in order to reduce or eliminate malfunctions arising from differences in threshold voltages of transistors coupled to the opposing nodes. One embodiment is a method including providing a silicon-on-insulator (SOI) sense amplifier having intermediate nodes between the transistors coupling each output data line to the corresponding input bit line and pre-charging each intermediate node to a predetermined voltage while the sense amplifier is not enabled. In one embodiment, the intermediate nodes are pre-charged by coupling them to a voltage source through pre-charge paths that do not include the data line pull-down transistors. In one embodiment, the method also includes decoupling the pre-charge paths after pre-charging the intermediate nodes and then enabling the sense amplifier.
    • 用于将读出放大器中的相对节点预充电到基本相同的电压的系统和方法,以便减少或消除由耦合到相对节点的晶体管的阈值电压的差异引起的故障。 一个实施例是一种方法,包括提供绝缘体上硅(SOI)读出放大器,该晶体管在晶体管之间具有中间节点,每个晶体管将每个输出数据线耦合到相应的输入位线,并将每个中间节点预充电到预定电压,而读出放大器 未启用 在一个实施例中,中间节点通过不包括数据线下拉晶体管的预充电路径将其耦合到电压源进行预充电。 在一个实施例中,该方法还包括在对中间节点预充电然后启用读出放大器之后去耦合预充电路径。