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1. 发明申请

US20110109893A1 MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS 有权
标题翻译：微波投影曝光装置
公开(公告)号：US20110109893A1
公开(公告)日：2011-05-12
申请号：US13007039
申请日：2011-01-14
申请人： Toralf Gruner , Alexander Epple , Markus Degünther
发明人： Toralf Gruner , Alexander Epple , Markus Degünther
IPC分类号： G03F7/20 , G03B27/54 , G03B27/72
CPC分类号： G03F7/70108 , G03F7/70141 , G03F7/70191
摘要： A projection exposure apparatus has a projection lens with an object plane, an image plane, an optical axis and a non-telecentric entrance pupil. The apparatus further comprises an illumination system having an intermediate field plane and a field stop. The field stop is positioned in or in close proximity to the intermediate field plane and defines an illuminated field in the object plane that does not contain the optical axis of the projection lens. The illumination system is configured such that, in the object plane, a mean of the angles formed between all principal rays emanating from the intermediate field plane on the one hand and the optical axis of the projection lens on the other hand differs from 0°.
摘要翻译：投影曝光装置具有物镜面，像面，光轴和非远心入射光瞳的投影透镜。该装置还包括具有中间场平面和场停止的照明系统。场停止件位于中间场平面中或紧邻中间场平面，并且在物平面中限定不包含投影透镜的光轴的照明场。照明系统被配置为使得在物平面中，从一方面从中间场平面发射的所有主光线与另一方面的投影透镜的光轴之间形成的角度的平均值不同于0°。

2. 发明授权

US09046787B2 Microlithographic projection exposure apparatus 有权
标题翻译：微光刻投影曝光装置
公开(公告)号：US09046787B2
公开(公告)日：2015-06-02
申请号：US13007039
申请日：2011-01-14
申请人： Toralf Gruner , Alexander Epple , Markus Degünther
发明人： Toralf Gruner , Alexander Epple , Markus Degünther
IPC分类号： G03B27/42 , G03F7/20
CPC分类号： G03F7/70108 , G03F7/70141 , G03F7/70191
摘要： A projection exposure apparatus has a projection lens with an object plane, an image plane, an optical axis and a non-telecentric entrance pupil. The apparatus further comprises an illumination system having an intermediate field plane and a field stop. The field stop is positioned in or in close proximity to the intermediate field plane and defines an illuminated field in the object plane that does not contain the optical axis of the projection lens. The illumination system is configured such that, in the object plane, a mean of the angles formed between all principal rays emanating from the intermediate field plane on the one hand and the optical axis of the projection lens on the other hand differs from 0°.
摘要翻译：投影曝光装置具有物镜面，像面，光轴和非远心入射光瞳的投影透镜。该装置还包括具有中间场平面和场停止的照明系统。场停止件位于中间场平面中或紧邻中间场平面，并且在物平面中限定不包含投影透镜的光轴的照明场。照明系统被配置为使得在物平面中，从一方面从中间场平面发射的所有主光线与另一方面的投影透镜的光轴之间形成的角度的平均值不同于0°。

3. 发明申请

US20080192224A1 Microlithographic Projection Exposure Apparatus 审中-公开
标题翻译：微光刻投影曝光装置
公开(公告)号：US20080192224A1
公开(公告)日：2008-08-14
申请号：US11814928
申请日：2005-02-12
申请人： Toralf Gruner , Alexander Epple , Markus Degünther
发明人： Toralf Gruner , Alexander Epple , Markus Degünther
IPC分类号： G03B27/72 , G03B27/54
CPC分类号： G03F7/70108 , G03F7/70141 , G03F7/70191
摘要： A projection exposure apparatus has a projection lens (10) with an object plane (34), an image plane, an optical axis (28) and a non-telecentric entrance pupil (32). The apparatus further comprises an illumination system (12) having an intermediate field plane (80) and a field stop (36; 36). The field stop is positioned in or in close proximity to the intermediate field plane (80) and defines an illuminated field (14) in the object plane (34) that does not contain the optical axis (28) of the projection lens (24). The illumination system (12) is configured such that, in the object plane (34), a mean of the angles formed between all principal rays (42) emanating from the intermediate field plane (80) on the one hand and the optical axis (28) of the projection lens (24) on the other hand differs from 0°.
摘要翻译：投影曝光装置具有具有物平面（34），像平面，光轴（28）和非远心入射光瞳（32）的投影透镜（10）。该装置还包括具有中间场平面（80）和场停止（36; 36）的照明系统（12）。场停止件位于中间场平面（80）中或紧邻中间场平面（80），并且在物平面（34）中限定不包含投影透镜（24）的光轴（28）的照明场（14）。照明系统（12）被配置为使得在物平面（34）中，一方面从中间场平面（80）发射的所有主光线（42）和光轴（42）之间形成的平均角另一方面，投影透镜（24）的光圈28（28）不同于0°。

4. 发明申请

US20110075121A1 CATADIOPTRIC PROJECTION OBJECTIVE 有权
标题翻译：目标投影目标
公开(公告)号：US20110075121A1
公开(公告)日：2011-03-31
申请号：US12748862
申请日：2010-03-29
申请人： Alexander Epple , Toralf Gruner , Ralf Mueller
发明人： Alexander Epple , Toralf Gruner , Ralf Mueller
IPC分类号： G03B27/72 , G02B17/06
CPC分类号： G02B13/143 , G02B17/0892 , G03F7/70225
摘要： Catadioptric projection objective (1) for microlithography for imaging an object field (3) in an object plane (5) onto an image field (7) in an image plane (9), including a first partial objective (11) imaging the object field onto a first real intermediate image (13), a second partial objective (15) imaging the first intermediate image onto a second real intermediate image (17) and a third partial objective (19) imaging the second intermediate image onto the image field (7). The second partial objective (15) has exactly one concave mirror (21) and at least one lens (23). The minimum distance between an optically utilized region of the concave mirror (21) and an optically utilized region of a surface (25)—facing the concave mirror—of a lens (23) adjacent to the concave mirror is greater than 10 mm.
摘要翻译：用于微光刻的反折射投影物镜（1），用于将物平面（5）中的物场（3）成像到图像平面（9）中的图像场（7），包括对物场进行成像的第一部分物镜（11）到第一实际中间图像（13），将第一中间图像成像到第二实际中间图像（17）上的第二部分目标（15）和将第二中间图像成像到图像场（7）上的第三部分目标（19））。第二部分物镜（15）具有正好一个凹面镜（21）和至少一个透镜（23）。凹面镜（21）的光学利用区域与与凹面镜相邻的透镜（23）的凹面镜的表面（25）的光学利用区域之间的最小距离大于10mm。

5. 发明申请

US20100265478A1 PROJECTION LENS SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE INSTALLATION 有权
标题翻译：微波投影曝光安装投影镜头系统
公开(公告)号：US20100265478A1
公开(公告)日：2010-10-21
申请号：US12825001
申请日：2010-06-28
申请人： Helmut Beierl , Sascha Bleidistel , Wolfgang Singer , Toralf Gruner , Alexander Epple , Norbert Wabra , Susanne Beder , Jochen Weber , Heiko Feldmann , Bärbel Schwaer , Olaf Rogalsky , Arif Kazi
发明人： Helmut Beierl , Sascha Bleidistel , Wolfgang Singer , Toralf Gruner , Alexander Epple , Norbert Wabra , Susanne Beder , Jochen Weber , Heiko Feldmann , Bärbel Schwaer , Olaf Rogalsky , Arif Kazi
IPC分类号： G03B27/68
CPC分类号： G03F7/70341 , G03F7/70891
摘要： A microlithographic projection exposure apparatus comprises a projection objective which images an object onto an image plane and has a lens with a curved surface. In the projection objective there is a liquid or solid medium which directly adjoins the curved surface over a region which is usable for imaging the object. The projection exposure apparatus also has an adjustable manipulator for reducing an image field curvature which is caused by heating of the medium during the projection operation.
摘要翻译：微光刻投影曝光装置包括将物体成像到平面上并具有弯曲表面的透镜的投影物镜。在投影物镜中，存在液体或固体介质，其直接邻接可用于成像物体的区域上的曲面。投影曝光装置还具有可调节的操纵器，用于降低在投影操作期间由介质的加热引起的图像场曲率。

6. 发明申请

US20090115986A1 Microlithography projection objective 审中-公开
标题翻译：微光刻投影物镜
公开(公告)号：US20090115986A1
公开(公告)日：2009-05-07
申请号：US11916162
申请日：2006-05-23
申请人： Heiko Feldmann , Daniel Kraehmer , Jean-Claude Perrin , Julian Kaller , Aurelian Dodoc , Vladimir Kamenov , Olaf Conradi , Toralf Gruner , Thomas Okon , Alexander Epple
发明人： Heiko Feldmann , Daniel Kraehmer , Jean-Claude Perrin , Julian Kaller , Aurelian Dodoc , Vladimir Kamenov , Olaf Conradi , Toralf Gruner , Thomas Okon , Alexander Epple
IPC分类号： G03F7/20 , G02B17/08
CPC分类号： G03F7/70225 , G02B17/08 , G03F7/702 , G03F7/70283 , G03F7/70941
摘要： Microlithography projection objectives for imaging into an image plane a pattern arranged in an object plane are described with respect to suppressing false light in such projection objectives.
摘要翻译：关于在这样的投影物镜中抑制假光，描述用于成像到平面中的布置在物体平面中的图案的微光刻投影物镜。

7. 发明申请

US20070165198A1 Projection objective for a microlithographic projection exposure apparatus 审中-公开
标题翻译：微光刻投影曝光装置的投影物镜
公开(公告)号：US20070165198A1
公开(公告)日：2007-07-19
申请号：US10597806
申请日：2004-12-27
申请人： Bernhard Kneer , Norbert Wabra , Toralf Gruner , Alexander Epple , Susanne Beder , Wolfgang Singer
发明人： Bernhard Kneer , Norbert Wabra , Toralf Gruner , Alexander Epple , Susanne Beder , Wolfgang Singer
IPC分类号： G03B27/00
CPC分类号： G03F7/70225 , G03F7/70241 , G03F7/70341 , G03F7/70958 , G03F7/70966
摘要： A projection objective of a microlithographic projection exposure apparatus (110) is designed for immersion operation in which an immersion liquid (134) adjoins a photosensitive layer (126). The refractive index of the immersion liquid is greater than the refractive index of a medium (L5; 142; L205; LL7; LL8; LL9). that adjoins the immersion liquid on the object side of the projection objective (120; 120′; 120″). The projection objective is designed such that the immersion liquid (134) is convexly curved towards the object plane (122) during immersion operation.
摘要翻译：微光刻投影曝光装置（110）的投影物镜被设计用于浸没操作，其中浸没液体（134）邻接感光层（126）。浸没液的折射率大于介质的折射率（L 5; 142; L 205; LL 7; LL 8; LL 9）。其邻接在投影物镜（120; 120'; 120“）的物体侧的浸没液体。投影物镜被设计成使得浸入液体（134）在浸入操作期间朝向物平面（122）凸形弯曲。

8. 发明授权

US08319944B2 Projection lens system of a microlithographic projection exposure installation 有权
标题翻译：投影透镜系统的微光刻投影曝光装置
公开(公告)号：US08319944B2
公开(公告)日：2012-11-27
申请号：US12825001
申请日：2010-06-28
申请人： Helmut Beierl , Sascha Bleidistel , Wolfgang Singer , Toralf Gruner , Alexander Epple , Norbert Wabra , Susanne Beder , Jochen Weber , Heiko Feldmann , Baerbel Schwaer , Olaf Rogalsky , Ari Kazi
发明人： Helmut Beierl , Sascha Bleidistel , Wolfgang Singer , Toralf Gruner , Alexander Epple , Norbert Wabra , Susanne Beder , Jochen Weber , Heiko Feldmann , Baerbel Schwaer , Olaf Rogalsky , Ari Kazi
IPC分类号： G03B27/42 , G03B27/52
CPC分类号： G03F7/70341 , G03F7/70891
摘要： A microlithographic projection exposure apparatus comprises a projection objective which images an object onto an image plane and has a lens with a curved surface. In the projection objective there is a liquid or solid medium which directly adjoins the curved surface over a region which is usable for imaging the object. The projection exposure apparatus also has an adjustable manipulator for reducing an image field curvature which is caused by heating of the medium during the projection operation.
摘要翻译：微光刻投影曝光装置包括将物体成像到平面上并具有弯曲表面的透镜的投影物镜。在投影物镜中，存在液体或固体介质，其直接邻接可用于成像物体的区域上的曲面。投影曝光装置还具有可调节的操纵器，用于降低在投影操作期间由介质的加热引起的图像场曲率。

9. 发明申请

US20120134016A1 METHOD OF MANUFACTURING A PROJECTION OBJECTIVE AND PROJECTION OBJECTIVE 有权
标题翻译：制作投影目标和投影目标的方法
公开(公告)号：US20120134016A1
公开(公告)日：2012-05-31
申请号：US13364565
申请日：2012-02-02
申请人： Heiko Feldmann , Toralf Gruner , Alexander Epple
发明人： Heiko Feldmann , Toralf Gruner , Alexander Epple
IPC分类号： G02B17/08
CPC分类号： G03F7/70891 , G03F7/70225 , G03F7/70275 , G03F7/705 , G03F7/70983
摘要： The disclosure relates to a method of manufacturing a projection objective, and a projection objective, such as a projection objective configured to be used in a microlithographic process. The method can include defining an initial design for the projection objective and optimizing the design using a merit function. The method can be used in the manufacturing of projection objectives which may be used in a microlithographic process of manufacturing miniaturized devices.
摘要翻译：本公开涉及一种制造投影物镜的方法，以及投影物镜，例如被配置为在微光刻工艺中使用的投影物镜。该方法可以包括定义投影物镜的初始设计，并使用优值函数优化设计。该方法可用于制造可用于制造小型化装置的微光刻工艺中的投影物镜。

10. 发明授权

US06806942B2 Projection exposure system 有权
标题翻译：投影曝光系统
公开(公告)号：US06806942B2
公开(公告)日：2004-10-19
申请号：US10434952
申请日：2003-05-08
申请人： Karl-Heinz Schuster , Wilhelm Ulrich , Toralf Gruner , Daniel Kraehmer , Wolfgang Singer , Alexander Epple , Helmut Beierl , Reiner Garreis
发明人： Karl-Heinz Schuster , Wilhelm Ulrich , Toralf Gruner , Daniel Kraehmer , Wolfgang Singer , Alexander Epple , Helmut Beierl , Reiner Garreis
IPC分类号： G03B2754
CPC分类号： G03F7/70241 , G02B13/143 , G02B13/24
摘要： A projection exposure system is proposed which is positionable between a first object and a second object for imaging the first object in a region of the second object with light of a wavelength band having a width &dgr;&lgr; about a central working wavelength &lgr;, wherein a relative width &dgr;&lgr;/&lgr; of the wavelength band is larger than 0.002, in particular, larger than 0.005, for example, of the Hg-I-line. The projection exposure system is a so-called three-bulge system comprising three bulges having, as a whole, a positive refractive power and two waists having, as a whole, a negative refractive power. By applying suitable measures, in particular, by suitably selecting the material for the lenses forming the projection exposure system, the long-term stability of the system is increased.
摘要翻译：提出了一种投影曝光系统，其可定位在第一物体和第二物体之间，用于在具有围绕中心工作波长λ的宽度偏差的波长带的光的第二物体的区域内成像第一物体，其中相对宽度波长带的偏差λ/λ大于0.002，特别是大于0.005，例如Hg-I线。投影曝光系统是所谓的三凸起系统，其包括总体上具有正屈光力的三个凸起，以及整体上具有负屈光力的两个凸起。通过适当的措施，特别是通过适当选择形成投影曝光系统的透镜的材料，可以提高系统的长期稳定性。

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