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1. 发明授权

US06602112B2 Dissolution of metal particles produced by polishing 失效
标题翻译：通过抛光产生的金属颗粒的溶解
公开(公告)号：US06602112B2
公开(公告)日：2003-08-05
申请号：US09764817
申请日：2001-01-18
申请人： Tony Quan Tran , Vikas Sachan , David Gettman , Terence M. Thomas , Craig D. Lack , Peter A. Burke
发明人： Tony Quan Tran , Vikas Sachan , David Gettman , Terence M. Thomas , Craig D. Lack , Peter A. Burke
IPC分类号： B24B100
CPC分类号： B24B37/013 , B24B31/16 , B24B37/042 , B24B49/04 , B24B49/12
摘要： A method for polishing a surface of metal on a semiconductor substrate by using a polishing pad and hydrogen peroxide, and removing particles of metal from the semiconductor substrate by polishing, and dissolving the particles in the quantity of hydrogen peroxide.
摘要翻译：一种通过使用抛光垫和过氧化氢在半导体衬底上抛光金属表面的方法，并且通过抛光从半导体衬底去除金属颗粒，并将该颗粒溶解在过氧化氢中。

2. 发明授权

US06616717B2 Composition and method for polishing in metal CMP 有权
标题翻译：金属CMP抛光的组成和方法
公开(公告)号：US06616717B2
公开(公告)日：2003-09-09
申请号：US09859147
申请日：2001-05-16
申请人： Vikas Sachan , Elizabeth A. (Kegerise) Langlois , Qianqiu (Christine) Ye , Keith G. Pierce , Craig D. Lack , Terence M. Thomas , Peter A. Burke , David Gettman , Sarah Lane
发明人： Vikas Sachan , Elizabeth A. (Kegerise) Langlois , Qianqiu (Christine) Ye , Keith G. Pierce , Craig D. Lack , Terence M. Thomas , Peter A. Burke , David Gettman , Sarah Lane
IPC分类号： C09G102
CPC分类号： H01L21/3212 , C09G1/02 , H01L21/31053
摘要： A composition is provided in the present invention for polishing a composite semiconductor structure containing a metal layer (such as tungsten, aluminum, or copper), a barrier layer (such as tantalum, tantalum nitride, titanium, or titanium nitride), and an insulating layer (such as SiO2). The composition comprises an aqueous medium, an oxidant, an organic polymer that attenuates removal of the oxide film. The composition may optionally comprise a complexing agent and/or a dispersant.
摘要翻译：在本发明中提供一种组合物，用于研磨包含金属层（例如钨，铝或铜），阻挡层（例如钽，氮化钽，钛或氮化钛）的绝缘体的复合半导体结构层（如SiO2）。组合物包含水性介质，氧化剂，有机聚合物，其减弱氧化膜的去除。组合物可任选地包含络合剂和/或分散剂。

3. 发明授权

US06699299B2 Composition and method for polishing in metal CMP 有权
标题翻译：金属CMP抛光的组成和方法
公开(公告)号：US06699299B2
公开(公告)日：2004-03-02
申请号：US10393074
申请日：2003-03-20
申请人： Vikas Sachan , Elizabeth A. (Kegerise) Langlois , Qianqiu (Christine) Ye , Keith G. Pierce , Craig D. Lack , Terence M. Thomas , Peter A. Burke , David Gettman , Sarah Lane
发明人： Vikas Sachan , Elizabeth A. (Kegerise) Langlois , Qianqiu (Christine) Ye , Keith G. Pierce , Craig D. Lack , Terence M. Thomas , Peter A. Burke , David Gettman , Sarah Lane
IPC分类号： B24B100
CPC分类号： H01L21/3212 , C09G1/02 , H01L21/31053
摘要： A composition is provided in the present invention for polishing a composite semiconductor structure containing a metal layer (such as tungsten, aluminum, or copper), a barrier layer (such as tantalum, tantalum nitride, titanium, or titanium nitride), and an insulating layer (such as SiO2). The composition comprises an aqueous medium, an oxidant, an organic polymer that attenuates removal of the oxide film. The composition may optionally comprise a complexing agent and/or a dispersant.
摘要翻译：在本发明中提供一种组合物，用于研磨包含金属层（例如钨，铝或铜），阻挡层（例如钽，氮化钽，钛或氮化钛）的绝缘体的复合半导体结构层（如SiO2）。组合物包含水性介质，氧化剂，有机聚合物，其减弱氧化膜的去除。组合物可任选地包含络合剂和/或分散剂。

4. 发明授权

US06331134B1 Composition and method for polishing in metal CMP 有权
标题翻译：金属CMP抛光的组成和方法
公开(公告)号：US06331134B1
公开(公告)日：2001-12-18
申请号：US09329225
申请日：1999-06-10
申请人： Vikas Sachan , Elizabeth A. (Kegerise) Langlois , Qianqiu (Christine) Ye , Keith G. Pierce , Craig D. Lack , Terence M. Thomas , Peter A. Burke , David Gettman , Sarah Lane
发明人： Vikas Sachan , Elizabeth A. (Kegerise) Langlois , Qianqiu (Christine) Ye , Keith G. Pierce , Craig D. Lack , Terence M. Thomas , Peter A. Burke , David Gettman , Sarah Lane
IPC分类号： B24B100
CPC分类号： H01L21/3212 , C09G1/02 , H01L21/31053
摘要： A composition is provided in the present invention for polishing a composite composite semiconductor structure containing a metal layer (such as tungsten, aluminum, or copper), a barrier layer (such as tantalum, tantalum nitride, titanium, or titanium nitride), and an insulating layer (such as SiO2). The composition comprises an aqueous medium, an abrasive, an oxidant, an organic polymer that attenuates removal of the oxide film having a degree of polymerization of at least 5 and having a plurality of moieties having affinity to surface groups contained on silicon dioxide surfaces. The composition may optionally comprise a complexing agent and/or a dispersant.
摘要翻译：在本发明中提供了一种用于抛光含有金属层（例如钨，铝或铜），阻挡层（例如钽，氮化钽，钛或氮化钛）的复合复合半导体结构的组合物，以及绝缘层（如SiO2）。该组合物包含水性介质，研磨剂，氧化剂，有机聚合物，其减弱具有至少5聚合度的氧化物膜的去除并具有与二氧化硅表面上所含表面基团亲和性的多个部分。组合物可任选地包含络合剂和/或分散剂。

5. 发明授权

US06447373B1 Chemical mechanical polishing slurries for metal 失效
标题翻译：金属化学机械抛光浆料
公开(公告)号：US06447373B1
公开(公告)日：2002-09-10
申请号：US09598377
申请日：2000-06-21
申请人： Craig D. Lack , Qiuliang Luo , Qianqiu (Christine) Ye , Vikas Sachan , Terence M. Thomas , Peter A. Burke
发明人： Craig D. Lack , Qiuliang Luo , Qianqiu (Christine) Ye , Vikas Sachan , Terence M. Thomas , Peter A. Burke
IPC分类号： B24B100
CPC分类号： C09G1/02 , C09K3/1436 , C09K3/1463
摘要： A slurry for use in chemical-mechanical polishing of a metal layer comprising particles dispersed in an aqueous medium. The slurry particles will tend to agglomerate when the slurry is at rest and will de-agglomerate with simple stirring. Such metastable slurry systems have been found to be particularly advantageous for metal polishing, particularly the polishing of metal layers during the manufacture of semiconductor devices.
摘要翻译：用于金属层的化学机械抛光的浆料，其包含分散在水性介质中的颗粒。当浆料静止时，浆料颗粒将趋于聚集，并且在简单的搅拌下将会聚集。已经发现，这种亚稳态浆料体系对于金属抛光特别有利于在制造半导体器件期间金属层的抛光。

6. 发明授权

US07270762B2 Polishing compositions for noble metals 有权
标题翻译：贵金属抛光组合物
公开(公告)号：US07270762B2
公开(公告)日：2007-09-18
申请号：US10393071
申请日：2003-03-20
申请人： Hongyu Wang , Terence M. Thomas , Qianqiu Ye , Heinz F. Reinhardt , Vikas Sachan
发明人： Hongyu Wang , Terence M. Thomas , Qianqiu Ye , Heinz F. Reinhardt , Vikas Sachan
IPC分类号： H01L21/302
CPC分类号： H01L21/3212 , C09G1/02 , C23F3/06
摘要： The polishing composition of this invention is useful for chemical-mechanical polishing of substrates containing noble metals such as platinum and comprises up to about 50% by weight of a adjuvant wherein said adjuvant is s elected from a group consisting of a metal-anion compound, a metal-cation compound or mixtures thereof; abrasive particles at about 0.5% to about 55% by weight of the polishing composition; and water-soluble organic additives up to about 10% by weight of the polishing composition. The abrasive particles are selected from the group consisting of alumina, ceria, silica, diamond, germania, zirconia, silicon carbide, boron nitride, boron carbide or mixtures thereof. The organic additives generally improve dispersion of the abrasive particles and also enhance metal removal rates and selectivity for metal removal by stabilizing the pH of the polishing composition and suppressing the dielectric removal rate.
摘要翻译：本发明的抛光组合物可用于化学机械抛光含有贵金属如铂的底物，并包含至多约50重量％的佐剂，其中所述佐剂选自金属 - 阴离子化合物，金属阳离子化合物或其混合物; 磨料颗粒为抛光组合物重量的约0.5％至约55％; 和高达约10重量％的抛光组合物的水溶性有机添加剂。磨料颗粒选自氧化铝，二氧化铈，二氧化硅，金刚石，氧化锗，氧化锆，碳化硅，氮化硼，碳化硼或其混合物。有机添加剂通常改善磨料颗粒的分散性，并通过稳定抛光组合物的pH并抑制介电去除速率来提高金属去除速率和金属去除选择性。

7. 发明授权

US06693035B1 Methods to control film removal rates for improved polishing in metal CMP 失效
标题翻译：控制膜去除速率以改善金属CMP抛光的方法
公开(公告)号：US06693035B1
公开(公告)日：2004-02-17
申请号：US09420682
申请日：1999-10-19
申请人： Vikas Sachan , Peter A. Burke , Elizabeth A. (Kegerise) Langlois , Keith G. Pierce
发明人： Vikas Sachan , Peter A. Burke , Elizabeth A. (Kegerise) Langlois , Keith G. Pierce
IPC分类号： H01L21302
CPC分类号： H01L21/31053 , C09G1/02 , H01L21/3212
摘要： A method for chemical mechanical planarization of a semiconductor structure comprised of a conductive metal interconnect layer, a barrier or liner film, and an underlying dielectric layer using a two-step polishing process is provided. In the first step, the conducting metal overburden is substantially removed with little removal of the barrier or liner layer or the underlying dielectric structure. In the second step, the barrier layer is removed with little removal of the underlying dielectric layer. Five different methods and associated slurry compositions are described for the second polishing step, each adjusted to the state of the wafer following the first step of polishing. By using the appropriate method, the integrity of the remaining semiconductor structure can be substantially retained.
摘要翻译：提供了使用两步抛光工艺的由导电金属互连层，阻挡层或衬里膜以及下层介电层构成的半导体结构的化学机械平面化方法。在第一步骤中，导电金属覆盖层基本上被除去，几乎没有去除阻挡层或衬里层或下面的介电结构。在第二步骤中，去除阻挡层，几乎不去除下面的介电层。对于第二抛光步骤描述了五种不同的方法和相关的浆料组合物，每种调整至第一抛光步骤后的晶片状态。通过使用适当的方法，可以基本上保持剩余半导体结构的完整性。

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