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1. 发明授权

US08580131B2 Plasma etching method 有权
标题翻译：等离子蚀刻法
公开(公告)号：US08580131B2
公开(公告)日：2013-11-12
申请号：US13363488
申请日：2012-02-01
申请人： Tomoyuki Watanabe , Mamoru Yakushiji , Michikazu Morimoto , Tetsuo Ono
发明人： Tomoyuki Watanabe , Mamoru Yakushiji , Michikazu Morimoto , Tetsuo Ono
IPC分类号： B44C1/22 , C23F1/00 , C03C15/00 , C03C25/68
CPC分类号： H01L21/31116
摘要： It is an object of the present invention to provide a plasma etching method that can improve a selection ratio of a film to be etched to a film different from the film to be etched than that in the related art. The present invention provides a plasma etching method for selectively etching a film to be etched with respect to another film different from the film to be etched, the plasma etching method including etching, using gas that can generate a deposited film containing components same as components of the another film different from the film to be etched, the film on which generation of the deposited film is suppressed.
摘要翻译：本发明的目的是提供一种等离子体蚀刻方法，其可以提高与要蚀刻的膜相比不同于待蚀刻的膜的膜的选择比，而不是现有技术。本发明提供了一种等离子体蚀刻方法，用于相对于不同于待蚀刻的膜的另一膜选择性地蚀刻待蚀刻的膜，该等离子体蚀刻方法包括蚀刻，使用可产生含有与与被蚀刻的膜不同的另一膜，抑制了沉积膜的一代的膜。

2. 发明申请

US20130109184A1 PLASMA ETCHING METHOD 有权
标题翻译：等离子体蚀刻法
公开(公告)号：US20130109184A1
公开(公告)日：2013-05-02
申请号：US13363488
申请日：2012-02-01
申请人： Tomoyuki WATANABE , Mamoru Yakushiji , Michikazu Morimoto , Tetsuo Ono
发明人： Tomoyuki WATANABE , Mamoru Yakushiji , Michikazu Morimoto , Tetsuo Ono
IPC分类号： H01L21/306
CPC分类号： H01L21/31116
摘要： It is an object of the present invention to provide a plasma etching method that can improve a selection ratio of a film to be etched to a film different from the film to be etched than that in the related art. The present invention provides a plasma etching method for selectively etching a film to be etched with respect to another film different from the film to be etched, the plasma etching method including etching, using gas that can generate a deposited film containing components same as components of the another film different from the film to be etched, the film on which generation of the deposited film is suppressed.
摘要翻译：本发明的目的是提供一种等离子体蚀刻方法，其可以提高与要蚀刻的膜相比不同于待蚀刻的膜的膜的选择比，而不是现有技术。本发明提供了一种等离子体蚀刻方法，用于相对于不同于待蚀刻的膜的另一膜选择性地蚀刻待蚀刻的膜，该等离子体蚀刻方法包括蚀刻，使用可产生含有与与被蚀刻的膜不同的另一膜，抑制了沉积膜的一代的膜。

3. 发明授权

US08801951B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US08801951B2
公开(公告)日：2014-08-12
申请号：US13210490
申请日：2011-08-16
申请人： Yoshiharu Inoue , Michikazu Morimoto , Tsuyoshi Matsumoto , Tetsuo Ono , Tadamitsu Kanekiyo , Mamoru Yakushiji , Masakazu Miyaji
发明人： Yoshiharu Inoue , Michikazu Morimoto , Tsuyoshi Matsumoto , Tetsuo Ono , Tadamitsu Kanekiyo , Mamoru Yakushiji , Masakazu Miyaji
IPC分类号： C03C15/00
CPC分类号： H01L21/31116
摘要： In a plasma processing method for conducting etching on an object to be processed by generating plasma from depositional gas introduced into a processing chamber and exposing the object to be processed to the plasma in a state in which radio frequency power is applied, the object to be processed is etched under etching conditions that a deposit film on an inner wall of the processing chamber becomes amorphous by repeating a first period during which the object to be processed is exposed to plasma and a second period during which the object to be processed is exposed to plasma and an etching rate is lower as compared with the first period. Consequently, particles due to increase in the number of processed sheets of the object to be processed can be suppressed.
摘要翻译：在等离子体处理方法中，通过在施加射频电力的状态下，通过从引入到处理室中的沉积气体产生等离子体并将待处理物体暴露于等离子体，对待处理对象进行蚀刻，在处理室的内壁上的沉积膜通过重复将被处理物暴露于等离子体的第一期间和第二期间，使被处理室的暴露于等离子体和蚀刻速率比第一阶段低。因此，能够抑制由于加工对象物的加工张数而增加的粒子。

4. 发明授权

US09305803B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US09305803B2
公开(公告)日：2016-04-05
申请号：US13185598
申请日：2011-07-19
申请人： Michikazu Morimoto , Yasuo Ohgoshi , Yuuzou Oohirabaru , Tetsuo Ono
发明人： Michikazu Morimoto , Yasuo Ohgoshi , Yuuzou Oohirabaru , Tetsuo Ono
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01L21/311 , H01L21/67 , H01J37/32 , H01L21/66 , H01L21/3065 , H01L21/762
CPC分类号： H01L21/67069 , H01J37/32146 , H01J37/32192 , H01J37/32935 , H01J2237/3348 , H01L21/3065 , H01L21/31116 , H01L21/76232 , H01L22/10
摘要： Provided are a plasma processing apparatus with a radio-frequency power supply supplying temporally modulated intermittent radio-frequency power which can be controlled with high precision in a wide repetition frequency band, and a plasma processing method using the plasma processing apparatus.A plasma processing apparatus includes: a vacuum vessel; a plasma generating section plasma in the vacuum vessel; a stage installed in the vacuum vessel and mounted with a sample; and a radio-frequency power supply applying temporally modulated intermittent radio-frequency power to the stage, wherein the radio-frequency power supply has two or more different frequency bands and temporally modulates the radio-frequency power by a repetition frequency which has the same range of analog signals used in each of the frequency band.
摘要翻译：提供一种等离子体处理装置，其具有提供可在宽重复频带中高精度地控制的时间调制的间歇射频功率的射频电源，以及使用等离子体处理装置的等离子体处理方法。一种等离子体处理装置，包括：真空容器; 真空容器中的等离子体产生部等离子体; 安装在真空容器中并安装有样品的阶段; 以及向所述载波台施加临时调制的间歇射频功率的射频电源，其中，所述射频电源具有两个以上的不同频带，并且通过具有相同范围的重复频率对所述射频功率进行时间调制在每个频带中使用的模拟信号。

5. 发明授权

US08828254B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US08828254B2
公开(公告)日：2014-09-09
申请号：US13363415
申请日：2012-02-01
申请人： Yoshiharu Inoue , Tetsuo Ono , Michikazu Morimoto , Masaki Fujii , Masakazu Miyaji
发明人： Yoshiharu Inoue , Tetsuo Ono , Michikazu Morimoto , Masaki Fujii , Masakazu Miyaji
IPC分类号： C03C15/00 , H01L21/3213 , H01J37/32
CPC分类号： H01J37/32266 , H01J37/32192 , H01J37/3266 , H01J37/32935 , H01J2237/2485 , H01J2237/334 , H01L21/3065 , H01L21/32137 , H01L21/67069 , H01L22/26
摘要： A plasma processing method and a plasma processing apparatus in which a stable process region can be ensured in a wide range, from low microwave power to high microwave power. The plasma processing method includes making production of plasma easy in a region in which production of plasma by continuous discharge is difficult, and plasma-processing an object to be processed, with the generated plasma, wherein the plasma is produced by pulsed discharge in which ON and OFF are repeated, radio-frequency power for producing the pulsed discharge, during an ON period, is a power to facilitate production of plasma by continuous discharge, and a duty ratio of the pulsed discharge is controlled so that an average power of the radio-frequency power per cycle is power in the region in which production of plasma by continuous discharge is difficult.
摘要翻译：一种等离子体处理方法和等离子体处理装置，其中可以从低微波功率到高微波功率的宽范围内确保稳定的处理区域。等离子体处理方法包括通过连续放电难以制造等离子体的区域以及通过所产生的等离子体等离子体处理被处理物的区域容易地制造等离子体，其中通过脉冲放电产生等离子体，其中ON 和OFF），在ON期间产生脉冲放电的射频功率是通过连续放电促进等离子体生产的功率，并且控制脉冲放电的占空比使得无线电的平均功率每个循环的频率功率是在难以通过连续放电产生等离子体的区域中的功率。

6. 发明申请

US20080020495A1 SEMICONDUCTOR FABRICATING APPARATUS WITH FUNCTION OF DETERMINING ETCHING PROCESSING STATE 有权
标题翻译：具有确定蚀刻加工状态功能的半导体制造装置
公开(公告)号：US20080020495A1
公开(公告)日：2008-01-24
申请号：US11840514
申请日：2007-08-17
申请人： Tatehito Usui , Motohiko Yoshigai , Kazuhiro Jyouo , Tetsuo Ono
发明人： Tatehito Usui , Motohiko Yoshigai , Kazuhiro Jyouo , Tetsuo Ono
IPC分类号： H01L21/00
CPC分类号： H01J37/32935 , H01L21/67069 , H01L21/67253
摘要： A semiconductor fabricating method including: placing the semiconductor wafer having a film thereon inside of a chamber; generating plasma; detecting a quantity of interference lights for each of at least two wavelengths obtained from a surface of the wafer for a predetermined time period during the etching of the wafer; detecting a first time point at which the detected quantity of interference lights for one of the two wavelengths becomes a maximum and a second time point at which the detected quantity of interference lights for the other wavelength becomes a minimum; determining a state of etching based on a result of comparing a predetermined value with an interval between the first and second time points, wherein both time points are detected by using outputs of a detector for detecting a quantity of the interference lights; and controlling etching in accordance with the determining.
摘要翻译：一种半导体制造方法，包括：将其上具有膜的半导体晶片放置在室内; 产生等离子体在晶片的蚀刻期间，在从晶片表面获得的每个至少两个波长的预定时间段内检测干涉光量; 检测所述检测到的两个波长中的一个波长的干扰光的检测量成为最大的第一时间点和所述其他波长的所检测的干涉光量成为最小的第二时间点; 基于将预定值与第一和第二时间点之间的间隔进行比较的结果来确定蚀刻状态，其中通过使用用于检测干涉光量的检测器的输出来检测两个时间点; 以及根据该确定来控制蚀刻。

7. 发明申请

US20060077397A1 Semiconductor fabricating apparatus with function of determining etching processing state 有权
标题翻译：具有确定蚀刻处理状态功能的半导体制造装置
公开(公告)号：US20060077397A1
公开(公告)日：2006-04-13
申请号：US11289394
申请日：2005-11-30
申请人： Tatehito Usui , Motohiko Yoshigai , Kazuhiro Jyouo , Tetsuo Ono
发明人： Tatehito Usui , Motohiko Yoshigai , Kazuhiro Jyouo , Tetsuo Ono
IPC分类号： G01B11/02
CPC分类号： H01J37/32935 , H01L21/67069 , H01L21/67253
摘要： A semiconductor fabricating apparatus for etching a semiconductor wafer, which is placed in a chamber and which has a multiple-layer film composed of a first film formed on a surface thereof and a second film formed on the first film, using plasma generated in the chamber. The semiconductor fabricating apparatus includes a light detector that detects a change in an amount of light with a plurality of wavelengths obtained from the surface of the wafer for a predetermined time during which the second film is etched, and a detection unit that detects a thickness of the first film based on a specific waveform obtained from an output of the detector.
摘要翻译：一种用于蚀刻半导体晶片的半导体制造装置，该半导体制造装置被放置在腔室中，并且具有由在其表面上形成的第一膜构成的多层膜和在第一膜上形成的第二膜，。半导体制造装置包括：光检测器，其在第二膜被蚀刻的预定时间内检测从晶片的表面获得的多个波长的光量的变化;以及检测单元，其检测厚度基于从检测器的输出获得的特定波形的第一胶片。

8. 发明授权

US06759253B2 Process monitoring methods in a plasma processing apparatus, monitoring units, and a sample processing method using the monitoring units 失效
标题翻译：等离子体处理装置中的过程监视方法，监视单元以及使用监视单元的样本处理方法
公开(公告)号：US06759253B2
公开(公告)日：2004-07-06
申请号：US09788629
申请日：2001-02-16
申请人： Tatehito Usui , Tetsuo Ono , Ryoji Nishio , Kazue Takahashi , Nobuyuki Mise
发明人： Tatehito Usui , Tetsuo Ono , Ryoji Nishio , Kazue Takahashi , Nobuyuki Mise
IPC分类号： H01L21302
CPC分类号： H01L22/34 , C23C16/50 , C23C16/52 , G01N21/73 , H01J37/32935 , H01L21/67253 , H01L2924/0002 , H01L2924/00
摘要： The intensity of the light emitted from the light-emitting diode on wafer is measured and then the potential difference between the terminals of the light-emitting element, and the plasma current flowing thereinto are derived from measured light intensity. Since the use of a camera enables non-contact measurement of emitted light intensity, the lead-in terminals for lead wires that are always required in conventional probing methods become unnecessary. In addition, since the target wafer does not require lead wire connection, wafers can be changed in the same way as performed for etching.
摘要翻译：测量从晶片上的发光二极管发射的光的强度，然后从测量的光强度导出发光元件的端子与其中流动的等离子体电流之间的电位差。由于使用相机能够非接触地测量发射的光强度，所以在常规探测方法中始终需要的导线的引入端子变得不必要。此外，由于目标晶片不需要引线连接，因此可以以与蚀刻相同的方式来改变晶片。

9. 发明授权

US6033481A Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US6033481A
公开(公告)日：2000-03-07
申请号：US225971
申请日：1999-01-06
申请人： Ken'etsu Yokogawa , Tetsuo Ono , Kazunori Tsujimoto , Naoshi Itabashi , Masahito Mori , Shinichi Tachi , Keizo Suzuki
发明人： Ken'etsu Yokogawa , Tetsuo Ono , Kazunori Tsujimoto , Naoshi Itabashi , Masahito Mori , Shinichi Tachi , Keizo Suzuki
IPC分类号： C23C16/00 , H01J37/32
CPC分类号： H01J37/3222 , H01J37/32082 , H01J37/32678 , H01J2237/3341
摘要： A plasma processing apparatus in which power consumption is reduced, which can generate uniform plasma in a large range and in which minute processing in high etching selectivity and in high aspect ratio is enabled is disclosed. High density plasma is generated in a vacuum vessel housing a processed sample utilizing an electron cyclotron resonance phenomenon caused by an electromagnetic wave in an ultra-high frequency band and a magnetic field and the surface of the processed sample is etched using this plasma. An electromagnetic wave in an ultra-high frequency band for generating plasma is radiated from a planar conductive plate consisting of graphite or silicon which is arranged opposite to the surface of the processed sample into space inside the vacuum vessel. High density plasma in the low degree of dissociation can be generated by using an electromagnetic wave in an ultra-high frequency band and as a result, the controllability of etching reaction can be enhanced. Further, a radical effective in etching can be increased by reaction between the surface of a planar conductive plate for radiating an electromagnetic wave and plasma.
摘要翻译：公开了能够在大范围内产生均匀的等离子体并能够实现高蚀刻选择性和高纵横比的微小加工的功耗降低的等离子体处理装置。利用由超高频带和磁场中的电磁波引起的电子回旋共振现象，在容纳加工样品的真空容器中产生高密度等离子体，并且使用该等离子体蚀刻处理样品的表面。用于产生等离子体的超高频带中的电磁波从由石墨或硅组成的平面导电板辐射，该导电板与被处理样品的表面相对地设置在真空容器内部的空间中。通过在超高频带中使用电磁波可以产生低解离度的高密度等离子体，结果可以提高蚀刻反应的可控性。此外，通过用于辐射电磁波的平面导电板的表面与等离子体之间的反应可以增加蚀刻中有效的自由基。

10. 发明授权

US5895586A Plasma processing apparatus and plasma processing method in which a part of the processing chamber is formed using a pre-fluorinated material of aluminum 失效
标题翻译：等离子体处理装置和等离子体处理方法，其中使用铝的预氟化材料形成处理室的一部分
公开(公告)号：US5895586A
公开(公告)日：1999-04-20
申请号：US737520
申请日：1996-11-12
申请人： Tetsunori Kaji , Saburo Kanai , Satoshi Ito , Ryoji Hamasaki , Tetsuo Ono , Tatehito Usui , Kazue Takahashi , Kazutami Tago
发明人： Tetsunori Kaji , Saburo Kanai , Satoshi Ito , Ryoji Hamasaki , Tetsuo Ono , Tatehito Usui , Kazue Takahashi , Kazutami Tago
IPC分类号： H01J37/32 , B23K10/00
CPC分类号： H01J37/32467 , H01J37/32477 , Y10S156/914
摘要： There are provided a plasma processing apparatus and a plasma processing method which are suitable for processing a processed substance using a gas plasma containing fluorine atoms.Structural materials used for a high vacuum processing chamber of a plasma processing apparatus are aluminum, aluminum having an anodic oxide coating processed surface and a material having a film of aluminum oxide or a film having aluminum oxide as a main component. A part or the whole of the inner surfaces of the processing chamber is constructed with a pre-fluorinated material.When plasma processing of a processed substance is performed using a gas plasma containing fluorine atoms in the processing chamber having the pre-fluorinated inner surfaces, time-varying processing characteristic can be suppressed.
摘要翻译： PCT No.PCT / JP95 / 00935 Sec。 371日期：1996年11月12日 102（e）日期1996年11月12日PCT提交1995年5月17日PCT公布。出版物WO95 / 31822 日期：1995年11月23日提供了适用于使用含有氟原子的气体等离子体处理物质的等离子体处理装置和等离子体处理方法。用于等离子体处理装置的高真空处理室的结构材料是具有阳极氧化物涂覆处理表面的铝，具有氧化铝膜或具有氧化铝作为主要成分的膜的材料。处理室的内表面的一部分或全部由预氟化材料构成。使用具有预氟化内表面的处理室中含有氟原子的气体等离子体进行处理物质的等离子体处理时，可以抑制时变处理特性。

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