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1. 发明申请

US20110186982A1 SURFACE MOUNT DIODE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：表面安装二极管及其制造方法
公开(公告)号：US20110186982A1
公开(公告)日：2011-08-04
申请号：US13016239
申请日：2011-01-28
申请人： Tomoyuki KITANI , Akira TOJO , Takao NOGI , Kazuhito HIGUCHI , Tomohiro IGUCHI , Masako FUKUMITSU , Susumu OBATA , Yusaku ASANO
发明人： Tomoyuki KITANI , Akira TOJO , Takao NOGI , Kazuhito HIGUCHI , Tomohiro IGUCHI , Masako FUKUMITSU , Susumu OBATA , Yusaku ASANO
IPC分类号： H01L23/48 , H01L21/782
CPC分类号： H01L21/782 , H01L23/48 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a surface mount diode including a diode chip including a first main surface and a second main surface, a cathode electrode including a first internal electrode portion on the first main surface and a first external electrode portion on the first internal electrode portion, an anode electrode including a second internal electrode portion on the second main surface and a second external electrode portion on the second internal electrode portion, a thickness of the second external electrode portion being the same as a thickness of the first external electrode portion, a first covering member covering a periphery surface of one of the internal electrode portions and a periphery surface of the diode chip, and a second covering member covering a periphery surface of the other of the internal electrode portions, the second covering member being different in color from the first covering member.
摘要翻译：根据一个实施例，一种表面贴装二极管，其包括具有第一主表面和第二主表面的二极管芯片，在第一主表面上包括第一内部电极部分的第一内部电极部分和第一内部电极部分上的第一外部电极部分包括第二主表面上的第二内部电极部分和第二内部电极部分上的第二外部电极部分的阳极电极，第二外部电极部分的厚度与第一外部电极部分的厚度相同，覆盖所述内部电极部分中的一个的周边表面和所述二极管芯片的外围表面的第一覆盖部件和覆盖所述另一个所述内部电极部分的周边表面的第二覆盖部件，所述第二覆盖部件的颜色不同于第一个覆盖成员。

2. 发明申请

US20110215427A1 SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件
公开(公告)号：US20110215427A1
公开(公告)日：2011-09-08
申请号：US13009212
申请日：2011-01-19
申请人： Susumu OBATA , Takahiro Sogou , Yusaku Asano , Takeshi Miyagi
发明人： Susumu OBATA , Takahiro Sogou , Yusaku Asano , Takeshi Miyagi
IPC分类号： H01L29/84
CPC分类号： H01L29/84 , H01L2224/11
摘要： According to one embodiment, a semiconductor device includes: a substrate; an organic insulating film provided on the substrate; an inorganic insulating film formed thinner than the organic insulating film on the organic insulating film; a hollow sealing structure that is formed on the inorganic insulating film, and seals a MEMS element in an inside while ensuring a space between the hollow sealing structure itself and the MEMS element; a through hole formed so as to penetrate the organic insulating film and the inorganic insulating film; and a conductive member that is filled into the through hole, and electrically connects the MEMS element and an electrode formed by being filled into the through hole.
摘要翻译：根据一个实施例，半导体器件包括：衬底; 设置在基板上的有机绝缘膜; 无机绝缘膜比有机绝缘膜上的有机绝缘膜薄; 形成在无机绝缘膜上的中空密封结构，并且在确保空心密封结构本身和MEMS元件之间的空间的同时将MEMS元件密封在内部; 形成为穿透有机绝缘膜和无机绝缘膜的通孔; 以及填充到通孔中的导电构件，并且将MEMS元件和由填充形成的电极电连接到通孔中。

3. 发明申请

US20130082294A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20130082294A1
公开(公告)日：2013-04-04
申请号：US13607480
申请日：2012-09-07
申请人： Toshiya NAKAYAMA , Kazuhito HIGUCHI , Hiroshi KOIZUMI , Hideo NISHIUCHI , Susumu OBATA , Akiya KIMURA , Yoshiaki SUGIZAKI , Akihiro KOJIMA , Yosuke AKIMOTO
发明人： Toshiya NAKAYAMA , Kazuhito HIGUCHI , Hiroshi KOIZUMI , Hideo NISHIUCHI , Susumu OBATA , Akiya KIMURA , Yoshiaki SUGIZAKI , Akihiro KOJIMA , Yosuke AKIMOTO
IPC分类号： H01L33/50
CPC分类号： H01L33/56 , H01L27/15 , H01L33/502 , H01L33/505 , H01L33/508 , H01L33/54 , H01L2933/0041
摘要： According to one embodiment, a light-emitting unit which emits light, a wavelength conversion unit which includes a phosphor and which is provided on a main surface of the light-emitting unit, and a transparent resin which is provided on top of the wavelength conversion unit, are prepared. The transparent resin has a greater modulus of elasticity and/or a higher Shore hardness than the wavelength conversion unit.
摘要翻译：根据一个实施例，发射光的发光单元，包括荧光体并设置在发光单元的主表面上的波长转换单元和设置在波长转换器顶部的透明树脂单位，准备。透明树脂具有比波长转换单元更大的弹性模量和/或更高的肖氏硬度。

4. 发明申请

US20130015483A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：US20130015483A1
公开(公告)日：2013-01-17
申请号：US13547777
申请日：2012-07-12
申请人： Kazuo SHIMOKAWA , Kazuhito HIGUCHI , Susumu OBATA
发明人： Kazuo SHIMOKAWA , Kazuhito HIGUCHI , Susumu OBATA
IPC分类号： H01L33/60
CPC分类号： H01L33/46 , H01L24/96 , H01L33/54 , H01L2224/04105 , H01L2224/12105 , H01L2224/73265 , H01L2224/73267
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked body, a first electrode, a second electrode, a reflective layer, a first metal pillar, a second metal pillar, and a sealing unit. The stacked body includes first and second semiconductor layers, and a light emitting unit. The light emitting unit is provided between the second portion and the second semiconductor layer. The first electrode is provided on the first semiconductor layer. The second electrode is provided on the second semiconductor layer. The reflective layer covers a side surface of the stacked body and insulative and reflective. The first metal pillar is electrically connected to the first electrode. The second metal pillar is electrically connected to the second electrode. The sealing unit seals the first and second metal pillars to leave end portions of the first and second metal pillars exposed.
摘要翻译：根据一个实施例，半导体发光器件包括层叠体，第一电极，第二电极，反射层，第一金属柱，第二金属柱和密封单元。层叠体包括第一和第二半导体层，以及发光单元。发光单元设置在第二部分和第二半导体层之间。第一电极设置在第一半导体层上。第二电极设置在第二半导体层上。反射层覆盖层叠体的侧面并具有绝缘性和反射性。第一金属柱与第一电极电连接。第二金属柱与第二电极电连接。密封单元密封第一和第二金属柱，以使第一和第二金属柱的端部露出。

5. 发明申请

US20080308919A1 HOLLOW SEALING STRUCTURE AND MANUFACTURING METHOD FOR HOLLOW SEALING STRUCTURE 有权
标题翻译：中空密封结构的中空密封结构和制造方法
公开(公告)号：US20080308919A1
公开(公告)日：2008-12-18
申请号：US12129361
申请日：2008-05-29
申请人： Susumu OBATA , Tatsuya Ohguro
发明人： Susumu OBATA , Tatsuya Ohguro
IPC分类号： H01L23/02 , H01L21/00
CPC分类号： B81C1/00293 , B81C2203/0136 , H01L21/565 , H01L23/315 , H01L2924/0002 , H01L2924/00
摘要： A manufacturing method for a hollow sealing structure, includes, a process for filling a recessed portion in a principal surface of a substrate with a first sacrificial layer, a process for forming a functional element portion on the principal surface of the substrate, a process for forming a second sacrificial layer on the functional element portion so as to be connected to a part of the first sacrificial layer, a process for forming a covering portion over respective surfaces of the first and second sacrificial layers, a process for circulating a fluid for sacrificial layer removal through an opening in the covering portion in contact with the first sacrificial layer, thereby removing the first and second sacrificial layers, and a process for closing the opening.
摘要翻译：一种中空密封结构体的制造方法，其特征在于，包括：利用第一牺牲层填充基板的主面的凹部的工序，在所述基板的主面上形成功能元件部的工序，在所述功能元件部分上形成第二牺牲层，以便连接到所述第一牺牲层的一部分;在所述第一和第二牺牲层的各个表面上形成覆盖部分的工艺，通过与第一牺牲层接触的覆盖部分中的开口去除层，从而去除第一和第二牺牲层以及关闭开口的过程。

6. 发明申请

US20110148045A1 HOLLOW SEALING STRUCTURE AND MANUFACTURING METHOD FOR HOLLOW SEALING STRUCTURE 有权
标题翻译：中空密封结构的中空密封结构和制造方法
公开(公告)号：US20110148045A1
公开(公告)日：2011-06-23
申请号：US13041562
申请日：2011-03-07
申请人： Susumu OBATA , Tatsuya Ohguro
发明人： Susumu OBATA , Tatsuya Ohguro
IPC分类号： F16J15/16
CPC分类号： B81C1/00293 , B81C2203/0136 , H01L21/565 , H01L23/315 , H01L2924/0002 , H01L2924/00
摘要： A manufacturing method for a hollow sealing structure, includes, a process for filling a recessed portion in a principal surface of a substrate with a first sacrificial layer, a process for forming a functional element portion on the principal surface of the substrate, a process for forming a second sacrificial layer on the functional element portion so as to be connected to a part of the first sacrificial layer, a process for forming a covering portion over respective surfaces of the first and second sacrificial layers, a process for circulating a fluid for sacrificial layer removal through an opening in the covering portion in contact with the first sacrificial layer, thereby removing the first and second sacrificial layers, and a process for closing the opening.
摘要翻译：一种中空密封结构体的制造方法，其特征在于，包括：利用第一牺牲层填充基板的主面的凹部的工序，在所述基板的主面上形成功能元件部的工序，在所述功能元件部分上形成第二牺牲层，以便连接到所述第一牺牲层的一部分;在所述第一和第二牺牲层的各个表面上形成覆盖部分的工艺，通过与第一牺牲层接触的覆盖部分中的开口去除层，从而去除第一和第二牺牲层以及关闭开口的过程。

7. 发明申请

US20080297992A1 HOLLOW SEALING STRUCTURE AND MANUFACTURING METHOD FOR HOLLOW SEALING STRUCTURE 审中-公开
标题翻译：中空密封结构的中空密封结构和制造方法
公开(公告)号：US20080297992A1
公开(公告)日：2008-12-04
申请号：US12128956
申请日：2008-05-29
申请人： Susumu OBATA , Michinobu Inoue , Takeshi Miyagi
发明人： Susumu OBATA , Michinobu Inoue , Takeshi Miyagi
IPC分类号： H05K7/00 , H01L21/00
CPC分类号： B81C1/00333 , B81C2203/0136 , B81C2203/0145 , H01L29/84
摘要： A hollow sealing structure includes, a substrate, a functional element portion disposed on a principal surface of the substrate, and a covering portion disposed over the principal surface of the substrate to form a hollow portion in which the covering portion covers the functional element portion, the covering portion including a first covering structure portion having a plurality of openings, second covering structure portions disposed individually on imaginary straight lines which connect the functional element portion and the openings, and a sealing structure portion which seals gaps defined between the first covering structure portion and the second covering structure portions.
摘要翻译：中空密封结构包括：基板，设置在基板的主表面上的功能元件部分和设置在基板的主表面上的覆盖部分，以形成覆盖部分覆盖功能元件部分的中空部分，所述覆盖部分包括具有多个开口的第一覆盖结构部分，分别设置在连接所述功能元件部分和所述开口的假想直线上的第二覆盖结构部分和密封结构部分，所述密封结构部分密封限定在所述第一覆盖结构部分和第二覆盖结构部分。

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