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    • 1. 发明授权
    • Curable silicone resin composition
    • 可固化硅树脂组合物
    • US07294682B2
    • 2007-11-13
    • US10942837
    • 2004-09-17
    • Tomoyuki GotoEiichi TabeiAkira Yamamoto
    • Tomoyuki GotoEiichi TabeiAkira Yamamoto
    • G08G77/20
    • G03F7/0757C08G77/12C08G77/16C08G77/18C08G77/20C08G77/70C08K5/54C08K5/5403C08K2201/014C08L83/04C08L83/00
    • A curable silicone resin composition is provided. It includes (A) an aromatic ring-containing hydrocarbon compound containing at least 2 silicon-bonded hydrogen atoms, in which the silicon atoms are bonded to the hydrocarbon skeleton; (B) an organopolysiloxane with a branched or three dimensional network structure, and with a viscosity at 25° C. of at least 1,000 mPa·s, having an average composition formula (1): R1xSiO{(4−x)/2}  (1) wherein, R1 independently represent a substituted or unsubstituted monovalent hydrocarbon group, a substituted or unsubstituted hydrocarbyloxy group, or a hydroxyl group, provided from 0.1 to 80 mol % of all the R1 groups are alkenyl groups, and x represents a positive number that satisfies 1≦x
    • 提供可固化的有机硅树脂组合物。 它包括(A)含有至少2个与硅键合的氢原子的含芳环的烃化合物,其中硅原子键合到烃骨架上; (B)具有支链或三维网状结构的有机聚硅氧烷,并且在25℃下的粘度为至少1,000mPa.s,具有平均组成式(1):<?in-line-formula description =“ (1-x)/ 2)(1)式(1)其中, 式中,R 1独立地表示取代或未取代的单价烃基,取代或未取代的烃氧基,或 提供0.1〜80摩尔%的全部R 1基团的羟基是烯基,x表示满足1≤x≤2的正数; 和(C)氢化硅烷化反应催化剂。 该组合物产生透明的固化产物并显示出优异的硬度和弯曲强度。
    • 4. 发明授权
    • Light emitting element driving circuit
    • 发光元件驱动电路
    • US09137868B2
    • 2015-09-15
    • US13495618
    • 2012-06-13
    • Feng XuShuhei KawaiTomoyuki Goto
    • Feng XuShuhei KawaiTomoyuki Goto
    • H05B37/00H05B33/08
    • H05B33/0824H05B33/0851
    • In accordance with an embodiment, a light emitting element driving circuit includes a comparator having an input connected to smoothing circuit and an output connected to a voltage-dividing circuit through a transistor. A drain-to-source resistance of the transistor is connected in parallel with a portion of the voltage dividing circuit. An output signal of the voltage dividing circuit is connected to another comparator that generates a drive transistor drive signal. The drive transistor is connected to one or more light emitting elements. In accordance with another embodiment, a reference voltage is generated in response to a rectified signal and compared with a sense voltage to generate a drive signal that is used to drive the drive transistor. Light is emitted from the one or more light emitting elements in response to the drive signal and the rectified voltage being greater than the forward voltage drops of the one or more light emitting elements.
    • 根据实施例,发光元件驱动电路包括具有连接到平滑电路的输入的比较器和通过晶体管连接到分压电路的输出。 晶体管的漏极 - 源极电阻与分压电路的一部分并联连接。 分压电路的输出信号连接到产生驱动晶体管驱动信号的另一个比较器。 驱动晶体管连接到一个或多个发光元件。 根据另一实施例,响应于整流信号产生参考电压并与感测电压进行比较以产生用于驱动驱动晶体管的驱动信号。 响应于驱动信号而从一个或多个发光元件发射光,并且整流电压大于一个或多个发光元件的正向电压降。
    • 5. 发明授权
    • Semiconductor device for protecting secondary battery, battery pack, and electronic device using same
    • 用于保护二次电池,电池组和使用其的电子装置的半导体装置
    • US09048677B2
    • 2015-06-02
    • US13729331
    • 2012-12-28
    • Tomoyuki Goto
    • Tomoyuki Goto
    • H01M10/48H02J7/00
    • H02J7/007H01M10/48H02J7/0031H02J2007/0037H02J2007/0039H02J2007/004
    • A battery pack includes a secondary battery, a discharge-control transistor, a charge-control transistor connected in series with the discharge-control transistor between a negative power source terminal of the secondary battery and a terminal of a load or a negative power source terminal of a charger, and a battery protection semiconductor device including a detection circuit that detects at least one of excessively charged, excessive discharging, overcurrent, short-circuit, and overheating states of the secondary battery, a control circuit that turns on and off the discharge-control transistor and the charge-control transistor, and a charge prevention circuit that prevents the secondary battery from being charged by turning off the charge-control transistor when a voltage of the secondary battery is not greater than a predetermined low-voltage criterial voltage variable by trimming a portion of the charge prevention circuit. The charge prevention circuit includes first and second inverter circuits.
    • 电池组包括二次电池,放电控制晶体管,与放电控制晶体管串联连接在二次电池的负电源端子与负载端子或负电源端子之间的充电控制晶体管 充电器的电池保护半导体装置,以及包括检测电路的电池保护半导体装置,其检测二次电池的过充电,过放电,过电流,短路和过热状态中的至少一个,导通和关断放电的控制电路 控制晶体管和充电控制晶体管;以及充电防止电路,其防止在二次电池的电压不大于预定的低电压标准电压变量时通过关闭充电控制晶体管而对二次电池进行充电 通过修整电荷预防电路的一部分。 充电防止电路包括第一和第二反相器电路。
    • 6. 发明申请
    • SEMICONDUCTOR DEVICE FOR PROTECTING SECONDARY BATTERY, BATTERY PACK, AND ELECTRONIC DEVICE USING SAME
    • 用于保护二次电池的电子设备,电池组和使用该电池的电子设备
    • US20130154564A1
    • 2013-06-20
    • US13729331
    • 2012-12-28
    • Tomoyuki Goto
    • Tomoyuki Goto
    • H02J7/00
    • H02J7/007H01M10/48H02J7/0031H02J2007/0037H02J2007/0039H02J2007/004
    • A battery pack includes a secondary battery, a discharge-control transistor, a charge-control transistor connected in series with the discharge-control transistor between a negative power source terminal of the secondary battery and a terminal of a load or a negative power source terminal of a charger, and a battery protection semiconductor device including a detection circuit that detects at least one of excessively charged, excessive discharging, overcurrent, short-circuit, and overheating states of the secondary battery, a control circuit that turns on and off the discharge-control transistor and the charge-control transistor, and a charge prevention circuit that prevents the secondary battery from being charged by turning off the charge-control transistor when a voltage of the secondary battery is not greater than a predetermined low-voltage criterial voltage variable by trimming a portion of the charge prevention circuit. The charge prevention circuit includes first and second inverter circuits.
    • 电池组包括二次电池,放电控制晶体管,与放电控制晶体管串联连接在二次电池的负电源端子与负载端子或负电源端子之间的充电控制晶体管 充电器的电池保护半导体装置和包括检测电路的电池保护半导体装置,其检测二次电池的过充电,过放电,过电流,短路和过热状态中的至少一个,导通和关断放电的控制电路 控制晶体管和充电控制晶体管;以及充电防止电路,其防止在二次电池的电压不大于预定的低电压标准电压变量时通过关闭充电控制晶体管而对二次电池进行充电 通过修整电荷预防电路的一部分。 充电防止电路包括第一和第二反相器电路。