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1. 发明授权

US08459561B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08459561B2
公开(公告)日：2013-06-11
申请号：US12204320
申请日：2008-09-04
申请人： Tomoyuki Aoki , Takuya Tsurume , Hiroki Adachi , Nozomi Horikoshi , Hisashi Ohtani
发明人： Tomoyuki Aoki , Takuya Tsurume , Hiroki Adachi , Nozomi Horikoshi , Hisashi Ohtani
IPC分类号： G06K19/06
CPC分类号： H01L23/29 , G06K19/07749 , H01L21/563 , H01L23/145 , H01L23/295 , H01L23/3121 , H01L23/60 , H01L23/66 , H01L27/1214 , H01L27/1266 , H01L27/13 , H01L2223/6677 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/09701 , H01L2924/12032 , H01L2924/12044 , H01L2924/19041 , H01L2924/3025 , Y10T428/31522 , H01L2924/00
摘要： A separation layer and a semiconductor element layer including a thin film transistor are formed. A conductive resin electrically connected to the semiconductor element layer is formed. A first sealing layer including a fiber and an organic resin layer is formed over the semiconductor element layer and the conductive resin. A groove is formed in the first sealing layer, the semiconductor element layer, and the separation layer. A liquid is dropped into the groove to separate the separation layer and the semiconductor element layer. The first sealing layer over the conductive resin is removed to form an opening. A set of the first sealing layer and the semiconductor element layer is divided into a chip. The chip is bonded to an antenna formed over a base material. A second sealing layer including a fiber and an organic resin layer is formed so as to cover the antenna and the chip.
摘要翻译：形成包括薄膜晶体管的分离层和半导体元件层。形成与半导体元件层电连接的导电树脂。包含纤维和有机树脂层的第一密封层形成在半导体元件层和导电树脂上。在第一密封层，半导体元件层和分离层中形成凹槽。将液体滴入槽中以分离分离层和半导体元件层。去除导电树脂上的第一密封层以形成开口。一组第一密封层和半导体元件层被分成芯片。芯片结合到形成在基材上的天线。形成包括纤维和有机树脂层的第二密封层，以覆盖天线和芯片。

2. 发明授权

US07759788B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07759788B2
公开(公告)日：2010-07-20
申请号：US12230484
申请日：2008-08-29
申请人： Tomoyuki Aoki , Takuya Tsurume , Hiroki Adachi , Hisashi Ohtani
发明人： Tomoyuki Aoki , Takuya Tsurume , Hiroki Adachi , Hisashi Ohtani
IPC分类号： H01L23/14
CPC分类号： H01L23/49855 , H01L2924/0002 , H01L2924/09701 , H01L2924/12044 , H01L2924/00
摘要： A highly reliable semiconductor device which is not damaged by local pressing force from the outside and in which unevenness of a portion where an antenna and an element overlap with each other is reduced. The semiconductor device includes a chip and an antenna. The chip includes a semiconductor element layer including a thin film transistor; a conductive resin electrically connected to the semiconductor element layer; and a sealing layer. The sealing layer in which a fiber body is impregnated with an organic resin covers the semiconductor element layer and the conductive resin, and has a thickness of 10 to 100 μm. The antenna has a depressed portion and is electrically connected to the semiconductor element layer through the conductive resin. The chip is embedded inside the depressed portion. The thickness of the chip is equal to the depth of the depressed portion.
摘要翻译：不会受到来自外部的局部按压力的损害，天线和元件相互重叠的部分的不均匀性降低的高度可靠的半导体装置。半导体器件包括芯片和天线。该芯片包括：包括薄膜晶体管的半导体元件层; 电连接到半导体元件层的导电树脂; 和密封层。纤维体浸渍有机树脂的密封层覆盖半导体元件层和导电性树脂，其厚度为10〜100μm。天线具有凹部，并且通过导电树脂与半导体元件层电连接。芯片嵌入凹陷部分内。芯片的厚度等于凹陷部分的深度。

3. 发明申请

US20090057875A1 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US20090057875A1
公开(公告)日：2009-03-05
申请号：US12230484
申请日：2008-08-29
申请人： Tomoyuki Aoki , Takuya Tsurume , Hiroki Adachi , Hisashi Ohtani
发明人： Tomoyuki Aoki , Takuya Tsurume , Hiroki Adachi , Hisashi Ohtani
IPC分类号： H01L23/14
CPC分类号： H01L23/49855 , H01L2924/0002 , H01L2924/09701 , H01L2924/12044 , H01L2924/00
摘要： A highly reliable semiconductor device which is not damaged by local pressing force from the outside and in which unevenness of a portion where an antenna and an element overlap with each other is reduced. The semiconductor device includes a chip and an antenna. The chip includes a semiconductor element layer including a thin film transistor; a conductive resin electrically connected to the semiconductor element layer; and a sealing layer. The sealing layer in which a fiber body is impregnated with an organic resin covers the semiconductor element layer and the conductive resin, and has a thickness of 10 to 100 μm. The antenna has a depressed portion and is electrically connected to the semiconductor element layer through the conductive resin. The chip is embedded inside the depressed portion. The thickness of the chip is equal to the depth of the depressed portion.
摘要翻译：不会受到来自外部的局部按压力的损害，天线和元件相互重叠的部分的不均匀性降低的高度可靠的半导体装置。半导体器件包括芯片和天线。该芯片包括：包括薄膜晶体管的半导体元件层; 电连接到半导体元件层的导电树脂; 和密封层。纤维体浸渍有机树脂的密封层覆盖半导体元件层和导电性树脂，其厚度为10〜100μm。天线具有凹部，并且通过导电树脂与半导体元件层电连接。芯片嵌入凹陷部分内。芯片的厚度等于凹陷部分的深度。

4. 发明授权

US07632740B2 Layer having functionality, method for forming flexible substrate having the same, and method for manufacturing semiconductor device 有权
标题翻译：具有功能的层，具有该层的柔性基板的形成方法以及半导体装置的制造方法
公开(公告)号：US07632740B2
公开(公告)日：2009-12-15
申请号：US11592249
申请日：2006-11-03
申请人： Tomoyuki Aoki , Takuya Tsurume
发明人： Tomoyuki Aoki , Takuya Tsurume
IPC分类号： H01L21/46 , H01L21/469 , H01L21/31 , H01L21/84 , H01L21/205 , H01L21/331 , H01L21/336
CPC分类号： H01Q7/00 , G02F1/133305 , G02F1/1362 , G02F2001/13613 , H01L24/97 , H01L2224/16225 , H01L2224/97 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/0101 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01056 , H01L2924/01057 , H01L2924/01058 , H01L2924/0106 , H01L2924/01067 , H01L2924/01068 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/07811 , H01L2924/09701 , H01L2924/10253 , H01L2924/10329 , H01L2924/12041 , H01L2924/12044 , H01L2924/13091 , H01L2924/14 , H01L2924/15787 , H01L2924/15788 , H01L2924/19041 , H01L2924/19043 , H01L2924/30107 , H01L2924/3025 , H01Q1/38 , H05K3/207 , H05K3/28 , H05K2203/016 , H05K2203/0531 , H01L2224/81 , H01L2924/00
摘要： It is an object of the present invention to provide a method for forming a layer having functionality including a conductive layer and a colored layer and a flexible substrate having a layer having functionality with a high yield. Further, it is an object of the present invention to provide a method for manufacturing a semiconductor device that is small-sized, thin, and lightweight. After coating a substrate having heat resistance with a silane coupling agent, a layer having functionality is formed. Then, after attaching an adhesive to the layer having functionality, the layer having functionality is peeled from the substrate. Further, after coating a substrate having heat resistance with a silane coupling agent, a layer having functionality is formed. Then, an adhesive is attached to the layer having functionality. Thereafter, the layer having functionality is peeled from the substrate, and a flexible substrate is attached to the layer having functionality.
摘要翻译：本发明的目的是提供一种形成具有包括导电层和着色层的功能的层的方法和具有具有高产率功能的层的柔性基板。此外，本发明的目的是提供一种小型，薄型和轻量化的半导体器件的制造方法。用硅烷偶联剂涂布具有耐热性的基材后，形成具有官能团的层。然后，在将粘合剂粘贴到具有官能团的层上之后，将具有官能团的层从基材上剥离。此外，在用硅烷偶联剂涂布具有耐热性的基材之后，形成具有官能团的层。然后，将粘合剂附着到具有功能性的层上。此后，具有功能性的层从基板剥离，并且柔性基板附着到具有功能的层。

5. 发明授权

US08436354B2 Layer having functionality, method for forming flexible substrate having the same, and method for manufacturing semiconductor device 有权
公开(公告)号：US08436354B2
公开(公告)日：2013-05-07
申请号：US13232011
申请日：2011-09-14
申请人： Tomoyuki Aoki , Takuya Tsurume
发明人： Tomoyuki Aoki , Takuya Tsurume
IPC分类号： H01L29/04 , H01L31/20 , H01L21/331 , H01L21/336
CPC分类号： H01Q7/00 , G02F1/133305 , G02F1/1362 , G02F2001/13613 , H01L24/97 , H01L2224/16225 , H01L2224/97 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/0101 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01056 , H01L2924/01057 , H01L2924/01058 , H01L2924/0106 , H01L2924/01067 , H01L2924/01068 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/07811 , H01L2924/09701 , H01L2924/10253 , H01L2924/10329 , H01L2924/12041 , H01L2924/12044 , H01L2924/13091 , H01L2924/14 , H01L2924/15787 , H01L2924/15788 , H01L2924/19041 , H01L2924/19043 , H01L2924/30107 , H01L2924/3025 , H01Q1/38 , H05K3/207 , H05K3/28 , H05K2203/016 , H05K2203/0531 , H01L2224/81 , H01L2924/00
摘要： It is an object of the present invention to provide a method for forming a layer having functionality including a conductive layer and a colored layer and a flexible substrate having a layer having functionality with a high yield. Further, it is an object of the present invention to provide a method for manufacturing a semiconductor device that is small-sized, thin, and lightweight. After coating a substrate having heat resistance with a silane coupling agent, a layer having functionality is formed. Then, after attaching an adhesive to the layer having functionality, the layer having functionality is peeled from the substrate. Further, after coating a substrate having heat resistance with a silane coupling agent, a layer having functionality is formed. Then, an adhesive is attached to the layer having functionality. Thereafter, the layer having functionality is peeled from the substrate, and a flexible substrate is attached to the layer having functionality.

6. 发明授权

US08030178B2 Layer having functionality, method for forming flexible substrate having the same, and method for manufacturing semiconductor device 有权
标题翻译：具有功能的层，具有该层的柔性基板的形成方法以及半导体装置的制造方法
公开(公告)号：US08030178B2
公开(公告)日：2011-10-04
申请号：US12618956
申请日：2009-11-16
申请人： Tomoyuki Aoki , Takuya Tsurume
发明人： Tomoyuki Aoki , Takuya Tsurume
IPC分类号： H01L21/46 , H01L21/469 , H01L21/31 , H01L21/84 , H01L21/205 , H01L21/331 , H01L21/336
CPC分类号： H01Q7/00 , G02F1/133305 , G02F1/1362 , G02F2001/13613 , H01L24/97 , H01L2224/16225 , H01L2224/97 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/0101 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01056 , H01L2924/01057 , H01L2924/01058 , H01L2924/0106 , H01L2924/01067 , H01L2924/01068 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/07811 , H01L2924/09701 , H01L2924/10253 , H01L2924/10329 , H01L2924/12041 , H01L2924/12044 , H01L2924/13091 , H01L2924/14 , H01L2924/15787 , H01L2924/15788 , H01L2924/19041 , H01L2924/19043 , H01L2924/30107 , H01L2924/3025 , H01Q1/38 , H05K3/207 , H05K3/28 , H05K2203/016 , H05K2203/0531 , H01L2224/81 , H01L2924/00
摘要： It is an object of the present invention to provide a method for forming a layer having functionality including a conductive layer and a colored layer and a flexible substrate having a layer having functionality with a high yield. Further, it is an object of the present invention to provide a method for manufacturing a semiconductor device that is small-sized, thin, and lightweight. After coating a substrate having heat resistance with a silane coupling agent, a layer having functionality is formed. Then, after attaching an adhesive to the layer having functionality, the layer having functionality is peeled from the substrate. Further, after coating a substrate having heat resistance with a silane coupling agent, a layer having functionality is formed. Then, an adhesive is attached to the layer having functionality. Thereafter, the layer having functionality is peeled from the substrate, and a flexible substrate is attached to the layer having functionality.
摘要翻译：本发明的目的是提供一种形成具有包括导电层和着色层的功能的层的方法和具有具有高产率功能的层的柔性基板。此外，本发明的目的是提供一种小型，薄型和轻量化的半导体器件的制造方法。用硅烷偶联剂涂布具有耐热性的基材后，形成具有官能团的层。然后，在将粘合剂粘贴到具有官能团的层上之后，将具有官能团的层从基材上剥离。此外，在用硅烷偶联剂涂布具有耐热性的基材之后，形成具有官能团的层。然后，将粘合剂附着到具有功能性的层上。此后，具有功能性的层从基板剥离，并且柔性基板附着到具有功能的层。

7. 发明申请

US20100062569A1 LAYER HAVING FUNCTIONALITY, METHOD FOR FORMING FLEXIBLE SUBSTRATE HAVING THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：具有功能的层，用于形成具有该功能的柔性基板的方法以及制造半导体器件的方法
公开(公告)号：US20100062569A1
公开(公告)日：2010-03-11
申请号：US12618956
申请日：2009-11-16
申请人： Tomoyuki Aoki , Takuya Tsurume
发明人： Tomoyuki Aoki , Takuya Tsurume
IPC分类号： H01L21/60 , C09D5/20 , B05D5/10
CPC分类号： H01Q7/00 , G02F1/133305 , G02F1/1362 , G02F2001/13613 , H01L24/97 , H01L2224/16225 , H01L2224/97 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/0101 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01056 , H01L2924/01057 , H01L2924/01058 , H01L2924/0106 , H01L2924/01067 , H01L2924/01068 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/07811 , H01L2924/09701 , H01L2924/10253 , H01L2924/10329 , H01L2924/12041 , H01L2924/12044 , H01L2924/13091 , H01L2924/14 , H01L2924/15787 , H01L2924/15788 , H01L2924/19041 , H01L2924/19043 , H01L2924/30107 , H01L2924/3025 , H01Q1/38 , H05K3/207 , H05K3/28 , H05K2203/016 , H05K2203/0531 , H01L2224/81 , H01L2924/00
摘要： It is an object of the present invention to provide a method for forming a layer having functionality including a conductive layer and a colored layer and a flexible substrate having a layer having functionality with a high yield. Further, it is an object of the present invention to provide a method for manufacturing a semiconductor device that is small-sized, thin, and lightweight. After coating a substrate having heat resistance with a silane coupling agent, a layer having functionality is formed. Then, after attaching an adhesive to the layer having functionality, the layer having functionality is peeled from the substrate. Further, after coating a substrate having heat resistance with a silane coupling agent, a layer having functionality is formed. Then, an adhesive is attached to the layer having functionality. Thereafter, the layer having functionality is peeled from the substrate, and a flexible substrate is attached to the layer having functionality.
摘要翻译：本发明的目的是提供一种形成具有包括导电层和着色层的功能的层的方法和具有具有高产率功能的层的柔性基板。此外，本发明的目的是提供一种小型，薄型和轻量化的半导体器件的制造方法。用硅烷偶联剂涂布具有耐热性的基材后，形成具有官能团的层。然后，在将粘合剂粘贴到具有官能团的层上之后，将具有官能团的层从基材上剥离。此外，在用硅烷偶联剂涂布具有耐热性的基材之后，形成具有官能团的层。然后，将粘合剂附着到具有功能性的层上。此后，具有功能性的层从基板剥离，并且柔性基板附着到具有功能的层。

8. 发明授权

US07875530B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07875530B2
公开(公告)日：2011-01-25
申请号：US11602261
申请日：2006-11-21
申请人： Tomoko Tamura , Tomoyuki Aoki , Takuya Tsurume , Koji Dairiki
发明人： Tomoko Tamura , Tomoyuki Aoki , Takuya Tsurume , Koji Dairiki
IPC分类号： H01L21/00 , H01L21/46 , H01L21/30
CPC分类号： H01L27/1266 , H01L27/1214
摘要： First semiconductor integrated circuits and second semiconductor integrated circuits arranged over a first substrate so that each of the second semiconductor integrated circuits is adjacent to one of the first semiconductor integrated circuits are transferred to additional substrates through multiple transfer operations. After the first semiconductor integrated circuits and the second semiconductor integrated circuits formed over the first substrate are transferred to the additional substrates (a fourth substrate and a fifth substrate) respectively, the circuits are divided into a semiconductor device corresponding to each semiconductor integrated circuit. The first semiconductor integrated circuits are arranged while keeping a distance from each other over the fourth substrate, and the second semiconductor integrated circuits are arranged while keeping a distance from each other over the fifth substrate. Thus, a large division margin of each of the fourth substrate and the fifth substrate can be obtained.
摘要翻译：第一半导体集成电路和第二半导体集成电路布置在第一基板上，使得第二半导体集成电路中的每一个与第一半导体集成电路之一相邻，通过多次传送操作被传送到附加的基板。在第一半导体集成电路和形成在第一衬底上的第二半导体集成电路分别转移到附加衬底（第四衬底和第五衬底）之后，将电路分成对应于每个半导体集成电路的半导体器件。第一半导体集成电路在第四衬底上彼此保持距离的同时被布置，并且第二半导体集成电路被布置成在第五衬底上彼此保持距离。因此，可以获得第四基板和第五基板中的每一个的大分割裕度。

9. 发明授权

US07713836B2 Method for forming conductive layer and substrate having the same, and method for manufacturing semiconductor device 失效
标题翻译：用于形成导电层的方法和具有该导电层的基板，以及用于制造半导体器件的方法
公开(公告)号：US07713836B2
公开(公告)日：2010-05-11
申请号：US11902799
申请日：2007-09-25
申请人： Tomoyuki Aoki , Takuya Tsurume , Daiki Yamada
发明人： Tomoyuki Aoki , Takuya Tsurume , Daiki Yamada
IPC分类号： H01L21/30
CPC分类号： H05K3/207 , H01L24/97 , H01L2224/05001 , H01L2224/05008 , H01L2224/05022 , H01L2224/05024 , H01L2224/05568 , H01L2224/05572 , H01L2224/16225 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/0101 , H01L2924/01013 , H01L2924/01018 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01051 , H01L2924/01056 , H01L2924/01058 , H01L2924/0106 , H01L2924/01067 , H01L2924/01068 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/07811 , H01L2924/10253 , H01L2924/10329 , H01L2924/12044 , H01L2924/13091 , H01L2924/14 , H01L2924/15787 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H05K1/0393 , H05K3/386 , H05K2201/0239 , H05K2203/016 , H05K2203/0531 , H01L2924/00 , H01L2224/05599 , H01L2224/05099
摘要： A separation layer is formed over a substrate having a depressed portion, using a silane coupling agent; a conductive layer and an insulating layer that covers the conductive layer are formed in the depressed portion over the separation layer; and a sticky member is attached to the insulating layer, then the conductive layer and the insulating layer are separated from the substrate. Alternatively, after these steps, a flexible substrate is attached to the conductive layer and the insulating layer.
摘要翻译：使用硅烷偶联剂在具有凹陷部的基板上形成分离层; 覆盖导电层的导电层和绝缘层形成在分离层上的凹陷部分中; 并且将粘性构件附接到绝缘层，然后将导电层和绝缘层与基板分离。或者，在这些步骤之后，将柔性基板附着到导电层和绝缘层。

10. 发明授权

US07504317B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07504317B2
公开(公告)日：2009-03-17
申请号：US11600070
申请日：2006-11-16
申请人： Tomoyuki Aoki , Tomoko Tamura , Takuya Tsurume , Koji Dairiki
发明人： Tomoyuki Aoki , Tomoko Tamura , Takuya Tsurume , Koji Dairiki
IPC分类号： H01L21/46
CPC分类号： H01L27/1266 , H01L21/78 , H01L27/1214
摘要： It is an object to provide a manufacturing method of a semiconductor device with high reliability. A plurality of first semiconductor integrated circuits, a plurality of second semiconductor integrated circuits each of which is arranged to be adjacent to one of the first semiconductor integrated circuits, a plurality of third semiconductor integrated circuits each of which is arranged to be adjacent to one of the first semiconductor integrated circuits and one of the second semiconductor integrated circuits, and a plurality of fourth semiconductor integrated circuits each of which is arranged to be adjacent to one of the first semiconductor integrated circuits, one of the second semiconductor integrated circuits, and one of the third semiconductor integrated circuits are formed over a first substrate. The first semiconductor integrated circuits are transferred to a second substrate. A first protective layer is formed to cover the first semiconductor integrated circuits and a surface of the second substrate in the periphery of the first semiconductor integrated circuits. The second substrate and the first protective layer are divided so that the plurality of the first semiconductor integrated circuits is divided into individual pieces and part of the second substrate remains in the periphery of the first semiconductor integrated circuits. Accordingly, a semiconductor device having the first semiconductor integrated circuit is manufactured.
摘要翻译：本发明的目的是提供一种高可靠性的半导体器件的制造方法。多个第一半导体集成电路，多个第二半导体集成电路，每个第二半导体集成电路被布置为与第一半导体集成电路之一相邻，多个第三半导体集成电路被布置为与第一半导体集成电路和第二半导体集成电路之一，以及多个第四半导体集成电路，每个第四半导体集成电路被布置为与第一半导体集成电路之一相邻，第二半导体集成电路之一和第二半导体集成电路之一第三半导体集成电路形成在第一基板上。第一半导体集成电路被转移到第二衬底。形成第一保护层以覆盖第一半导体集成电路和第一半导体集成电路的周边中的第二基板的表面。第二基板和第一保护层被分割成使得多个第一半导体集成电路被分成单独的部分，并且第二基板的一部分保留在第一半导体集成电路的周围。因此，制造具有第一半导体集成电路的半导体器件。

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