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    • 4. 发明申请
    • Grommet
    • 索环
    • US20060201710A1
    • 2006-09-14
    • US11353064
    • 2006-02-14
    • Tomoyasu Murakami
    • Tomoyasu Murakami
    • H02G3/18
    • H02G3/22B60R16/0222Y10T16/05
    • A grommet includes a cylindrical portion that operable to fit on an outer circumference of an electric wire which passes through a trough hole in a panel, a panel fitting portion on which an inner circumferential edge of the through hole in the panel is fitted, and a connecting portion that connects the cylindrical portion and the panel fitting portion. The panel fitting portion includes a seal projection that is brought into press contact with the panel, and a seal protection wall is provided on the panel fitting portion for reducing the influence to the panel fitting portion caused by a flow of injected water from external.
    • 索环包括可操作以装配在通过面板中的槽孔的电线的外圆周上的圆柱形部分,面板装配部分,面板中的通孔的内周边缘在其上装配,以及 连接部分,其连接圆柱形部分和面板装配部分。 面板装配部分包括与面板压接的密封突起,并且在面板装配部分上设有密封保护壁,用于减少由外部注入的水流引起的对面板装配部分的影响。
    • 6. 发明授权
    • Semiconductor device fabrication method
    • 半导体器件制造方法
    • US5569628A
    • 1996-10-29
    • US535323
    • 1995-09-27
    • Kousaku YanoTomoyasu MurakamiMasayuki EndoNoboru Nomura
    • Kousaku YanoTomoyasu MurakamiMasayuki EndoNoboru Nomura
    • H01L21/28H01L21/768H01L21/465
    • H01L21/76841H01L21/76843
    • A silicon dioxide film is partly etched away to form an opening thereby exposing a silicon substrate. The surface of the opening, which is almost entirely covered with Si-OH, is coated with hexamethyldisilazane (HMDS) to bring about a silylation reaction. This causes the silicon substrate surface to be covered with a molecular film formed by replacing the hydrogen part in Si-OH with Si((CH.sub.3).sub.3. Atoms of aluminum are ejected by a sputtering process. The ejected aluminum atoms collide with the molecular film. Although some hydrocarbons (CH.sub.x) are sputtered or ejected due to such collision, a SiO.sub.x C.sub.y H.sub.z film 12' transformed from the molecular film is left between an aluminum film deposited and the silicon substrate. This SiO.sub.x C.sub.y H.sub.z film 12' acts as a barrier metal. The presence of the SiO.sub.x C.sub.y H.sub.z film prevents the occurrence of counter diffusion in the Al-Si system. No spikes are formed as a result.
    • 部分地蚀刻掉二氧化硅膜以形成开口,从而暴露硅衬底。 几乎完全用Si-OH覆盖的开口的表面涂覆有六甲基二硅氮烷(HMDS)以进行甲硅烷基化反应。 这导致硅衬底表面被用Si((CH 3)3代替Si-OH中的氢部分而形成的分子膜覆盖,铝的原子通过溅射工艺喷射,喷射的铝原子与分子膜碰撞 虽然由于这种碰撞而使一些烃类(CHx)溅射或喷射,但是从分子膜转化的SiO x C y H z膜12'留在沉积的铝膜和硅基板之间,该SiOxCyHz膜12'作为阻挡金属, SiOxCyHz膜的存在防止了在Al-Si系统中产生反向扩散,结果不形成尖峰。
    • 8. 发明授权
    • Method and apparatus for polishing semiconductor substrate
    • 用于研磨半导体衬底的方法和装置
    • US5866480A
    • 1999-02-02
    • US697509
    • 1996-08-26
    • Tomoyasu MurakamiMikio Nishio
    • Tomoyasu MurakamiMikio Nishio
    • B24B37/04H01L21/304
    • B24B37/04B24B57/02
    • A polishing pad is adhered to the top surface of a flat polishing pad holder of a platen. A substrate holding head for holding and rotating a semiconductor substrate is provided above the platen. The semiconductor substrate is rotated and pressed against the polishing pad on the platen. A slurry is supplied in a prescribed amount from a slurry supply pipe onto the polishing pad. A slat-like slurry pushing member for pushing the slurry to a central portion of the platen is provided slidably over the polishing pad. The slurry pushing member is fixed so that an inner portion thereof in a radial direction of the platen is downstream of an outer portion thereof in the radial direction of the platen in the direction of rotation of the platen during polishing.
    • 抛光垫粘附到压板的平坦抛光垫保持器的顶表面上。 用于保持和旋转半导体衬底的衬底保持头设置在压板上方。 将半导体衬底旋转并压靠在压板上的抛光垫上。 从浆料供给管将规定量的浆料供给到研磨垫上。 用于将浆料推送到压板的中心部分的板条浆料推动构件可滑动地设置在抛光垫上。 浆料推动构件被固定,使得其在压板的径向方向上的内部部分在压板的径向方向上在压板的径向方向上在抛光期间在压板的旋转方向上在其下方。