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    • 4. 发明申请
    • Film Forming Method
    • 成膜方法
    • US20130011943A1
    • 2013-01-10
    • US13635201
    • 2011-02-28
    • Rena TsuruokaHisao IkedaTakuya TsurumeTohru SonodaSatoshi Inoue
    • Rena TsuruokaHisao IkedaTakuya TsurumeTohru SonodaSatoshi Inoue
    • H01L33/02
    • H01L51/0013C23C14/04C23C14/048H01L51/56
    • One embodiment of the present invention is a film forming method comprising: arranging a surface of a film formation substrate 10 including an absorption layer 12 on a first substrate 11 and a material layer 13 containing a film formation material and a surface of a film-formation target substrate 20 including a first layer 23 over a second substrate 22, so as to face each other; forming a second layer 13a containing the film formation material over the first layer 23 by performing first heat treatment on the material layer 13; and forming a third layer 13b containing the film formation material over the second layer 13a by performing second heat treatment on the material layer 13. In the second heat treatment, energy with a density higher than that in the first heat treatment is applied to the material layer.
    • 本发明的一个实施方案是一种成膜方法,其包括:将包含吸收层12的成膜基板10的表面布置在第一基板11和包含成膜材料的材料层13和膜形成表面 目标基板20包括第二基板22上的第一层23,以便彼此面对; 通过对材料层13进行第一次热处理,在第一层23上形成含有成膜材料的第二层13a; 并在第二层13a上形成含有成膜材料的第三层13b,在材料层13上进行第二热处理。在第二热处理中,将密度高于第一热处理的能量施加到材料 层。
    • 5. 发明授权
    • Film forming method
    • 成膜方法
    • US08951816B2
    • 2015-02-10
    • US13635201
    • 2011-02-28
    • Rena TsuruokaHisao IkedaTakuya TsurumeTohru SonodaSatoshi Inoue
    • Rena TsuruokaHisao IkedaTakuya TsurumeTohru SonodaSatoshi Inoue
    • H01L21/00H01L51/00C23C14/04H01L51/56
    • H01L51/0013C23C14/04C23C14/048H01L51/56
    • One embodiment of the present invention is a film forming method comprising: arranging a surface of a film formation substrate 10 including an absorption layer 12 on a first substrate 11 and a material layer 13 containing a film formation material and a surface of a film-formation target substrate 20 including a first layer 23 over a second substrate 22, so as to face each other; forming a second layer 13a containing the film formation material over the first layer 23 by performing first heat treatment on the material layer 13; and forming a third layer 13b containing the film formation material over the second layer 13a by performing second heat treatment on the material layer 13. In the second heat treatment, energy with a density higher than that in the first heat treatment is applied to the material layer.
    • 本发明的一个实施方案是一种成膜方法,其包括:将包含吸收层12的成膜基板10的表面布置在第一基板11和包含成膜材料的材料层13和膜形成表面 目标基板20包括第二基板22上的第一层23,以便彼此面对; 通过对材料层13进行第一次热处理,在第一层23上形成含有成膜材料的第二层13a; 并在第二层13a上形成含有成膜材料的第三层13b,在材料层13上进行第二热处理。在第二热处理中,将密度高于第一热处理的能量施加到材料 层。