专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20080242091A1 METAL-POLISHING LIQUID AND POLISHING METHOD 审中-公开
标题翻译：金属抛光液和抛光方法
公开(公告)号：US20080242091A1
公开(公告)日：2008-10-02
申请号：US12043729
申请日：2008-03-06
申请人： Tomoo KATO , Takamitsu TOMIGA , Sumi TAKAMIYA
发明人： Tomoo KATO , Takamitsu TOMIGA , Sumi TAKAMIYA
IPC分类号： H01L21/302 , C09K13/00
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463
摘要： A metal-polishing liquid used for chemical and mechanical polishing of copper wiring in a semiconductor device, the metal-polishing liquid comprising: (a) a tetrazole compound having a substituent in the 5-position; (b) a tetrazole compound not substituted in the 5-position; (c) abrasive grains; and (d) an oxidizing agent.
摘要翻译：一种用于半导体器件中铜布线的化学和机械抛光的金属抛光液体，所述金属抛光液体包括：（a）在5位上具有取代基的四唑化合物; （b）在5-位未被取代的四唑化合物; （c）磨粒; 和（d）氧化剂。

2. 发明申请

US20080206995A1 METAL-POLISHING LIQUID AND POLISHING METHOD THEREWITH 审中-公开
标题翻译：金属抛光液和抛光方法
公开(公告)号：US20080206995A1
公开(公告)日：2008-08-28
申请号：US12018456
申请日：2008-01-23
申请人： Takamitsu TOMIGA , Tomoo KATO
发明人： Takamitsu TOMIGA , Tomoo KATO
IPC分类号： H01L21/302 , C09K13/00
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1409 , C09K3/1463
摘要： The present invention provides a metal-polishing liquid that is used in chemical mechanical polishing for a conductor film made of copper or a copper alloy during semiconductor device production, wherein the metal-polishing liquid comprises the following components (1), (2) and (3): (1) an amino-acid derivative represented by the following formula (I) wherein in the formula (I), R1 represents an alkyl group having 1 to 4 carbon atoms; (2) colloidal silica in which silicon atoms on a surface thereof are at least partially modified by aluminum atoms; and (3) an oxidant.
摘要翻译：本发明提供了一种金属抛光液，其用于在半导体器件制造期间由铜或铜合金制成的导体膜进行化学机械抛光，其中金属抛光液包含以下组分（1），（2）和（3）：（1）由下式（I）表示的氨基酸衍生物，其中在式（I）中，R 1表示具有1〜4个碳原子的烷基; （2）其表面上的硅原子至少部分被铝原子改性的胶体二氧化硅; 和（3）氧化剂。

3. 发明申请

US20090239380A1 POLISHING LIQUID FOR METAL AND POLISHING METHOD USING THE SAME 有权
标题翻译：用于金属和抛光方法的抛光液
公开(公告)号：US20090239380A1
公开(公告)日：2009-09-24
申请号：US12399984
申请日：2009-03-09
申请人： Takamitsu TOMIGA , Tomoo KATO , Tadashi INABA , Masaru YOSHIKAWA
发明人： Takamitsu TOMIGA , Tomoo KATO , Tadashi INABA , Masaru YOSHIKAWA
IPC分类号： H01L21/306 , C09K13/00
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1454 , C09K3/1463
摘要： A liquid for polishing a metal is provided that is used for chemically and mechanically polishing a conductor film including copper or a copper alloy in production of a semiconductor device, and a polishing method using the metal-polishing liquid is also provided. The liquid includes: (a) colloidal silica particles having an average primary particle size of from 10 nm to 25 nm and an average secondary particle size of from 50 nm to 70 nm; (b) a metal anticorrosive agent; (c) at least one compound selected from the group consisting of a surfactant and a water-soluble polymer compound; (d) an oxidizing agent; and (e) an organic acid.
摘要翻译：提供了一种用于抛光金属的液体，其用于在制造半导体器件时用于化学和机械抛光包括铜或铜合金的导体膜，并且还提供了使用该金属抛光液的抛光方法。液体包括：（a）平均一次粒径为10nm〜25nm，平均二次粒径为50nm〜70nm的胶态二氧化硅粒子; （b）金属防腐剂; （c）至少一种选自表面活性剂和水溶性高分子化合物的化合物; （d）氧化剂; 和（e）有机酸。

4. 发明申请

US20090203215A1 METAL POLISHING SLURRY AND CHEMICAL MECHANICAL POLISHING METHOD 审中-公开
标题翻译：金属抛光浆料和化学机械抛光方法
公开(公告)号：US20090203215A1
公开(公告)日：2009-08-13
申请号：US12368038
申请日：2009-02-09
申请人： Masaru YOSHIKAWA , Tadashi INABA , Hiroshi INADA , Takamitsu TOMIGA
发明人： Masaru YOSHIKAWA , Tadashi INABA , Hiroshi INADA , Takamitsu TOMIGA
IPC分类号： H01L21/304 , C09K13/00
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1409 , C09K3/1463
摘要： A metal polishing slurry which is capable of simultaneously realizing a high polishing speed and reduced dishing in the polishing of a subject to be polished is provided. The metal polishing slurry includes a compound represented by the following general formula (1): wherein X represents a heterocyclic group containing at least one nitrogen atom, Y represents hydrogen atom, an aliphatic hydrocarbon group, an aryl group, or a —C(═O)Z′ wherein Z′ is as defined for Z, and Z represents hydrogen atom, an optionally substituted aliphatic hydrocarbon group, an optionally substituted aryl group, an optionally substituted heterocyclic group, —NZ1Z2, or —OZ3 wherein Z1, Z2, and Z3 independently represent hydrogen atom, an optionally substituted aliphatic hydrocarbon group, an optionally substituted aryl group, or an optionally substituted heterocyclic group, with the proviso that Y and Z may together form a ring; an oxidizing agent; and an organic acid.
摘要翻译：提供能够同时实现高抛光速度并减少抛光对象抛光中的凹陷的金属抛光浆料。金属研磨浆料包括由以下通式（1）表示的化合物：其中X表示含有至少一个氮原子的杂环基，Y表示氢原子，脂族烃基，芳基或-C（ - O）Z'，其中Z'如对Z定义，Z表示氢原子，任选取代的脂族烃基，任选取代的芳基，任选取代的杂环基，-NZ 1 Z 2或-OZ 3，其中Z 1，Z 2和 Z 3独立地表示氢原子，任选取代的脂族烃基，任选取代的芳基或任选取代的杂环基，条件是Y和Z可以一起形成环; 氧化剂; 和有机酸。

5. 发明申请

US20080242090A1 METAL-POLISHING LIQUID AND POLISHING METHOD 有权
标题翻译：金属抛光液和抛光方法
公开(公告)号：US20080242090A1
公开(公告)日：2008-10-02
申请号：US12055930
申请日：2008-03-26
申请人： Toru YAMADA , Makoto KIKUCHI , Tadashi INABA , Takahiro MATSUNO , Takamitsu TOMIGA , Kazutaka TAKAHASHI
发明人： Toru YAMADA , Makoto KIKUCHI , Tadashi INABA , Takahiro MATSUNO , Takamitsu TOMIGA , Kazutaka TAKAHASHI
IPC分类号： H01L21/302 , C09K13/00
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1436 , C09K3/1463
摘要： A metal-polishing liquid used for chemical-mechanical polishing of a conductor film of copper or a copper alloy in a process for manufacturing a semiconductor device, the metal-polishing liquid comprising: (1) an amino acid derivative represented by the formula (I); and (2) a surfactant, wherein, in the formula (I), R1 represents an alkyl group having 1 to 4 carbon atoms and R2 represents an alkylene group having 1 to 4 carbon atoms.
摘要翻译： 1.一种金属抛光液，其特征在于，在所述半导体装置的制造方法中，对铜或铜合金的导体膜进行化学机械研磨的金属研磨液，所述金属抛光液含有：（1）式）; 和（2）表面活性剂，其中在式（I）中，R 1表示具有1至4个碳原子的烷基，R 2表示具有 1至4个碳原子。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式