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1. 发明申请

US20140111848A1 OPTICAL DEVICE FOR MICROSCOPIC OBSERVATION 有权
标题翻译：用于微观观察的光学装置
公开(公告)号：US20140111848A1
公开(公告)日：2014-04-24
申请号：US14124280
申请日：2012-05-17
申请人： Tomonori Nakamura , Ikuo Arata , Yoshihiro Ito
发明人： Tomonori Nakamura , Ikuo Arata , Yoshihiro Ito
IPC分类号： G02B21/04
CPC分类号： G02B21/361 , G02B5/006 , G02B21/0004 , G02B21/0016 , G02B21/04 , G02B21/16 , G02B21/248 , G02B27/0018
摘要： An optical device for microscopic observation 4 comprises: a cold stop 13 having openings 13d, 13e corresponding to a low-magnification microscope optical system 5 and being a stop member arranged in a vacuum vessel 12 to let the light from the sample S pass to the camera 3; a warm stop 10 having an opening 14 corresponding to a high-magnification microscope optical system 5 and being a stop member arranged outside the vacuum vessel 12 to let the light from the sample S pass toward the cold stop 13; and a support member 11 supporting the warm stop 10 so that the warm stop can be inserted to or removed from on the optical axis of the light from the sample S, wherein the warm stop 10 has a reflective surface 15 on the camera 3 side and wherein the opening 14 is smaller than the openings 13d, 13e.
摘要翻译：用于显微镜观察的光学装置4包括：具有对应于低倍率显微镜光学系统5的开口13d，13e的冷止端13，并且是设置在真空容器12中以使来自样品S的光通过到相机3; 具有对应于高倍率显微镜光学系统5的开口14的热止动件10，并且是设置在真空容器12外部以使来自样品S的光通向冷止器13的止动构件; 以及支撑暖挡件10的支撑构件11，使得暖挡件可以插入到来自样品S的光的光轴上或从其上移除，其中暖挡件10在相机3侧具有反射表面15，其中开口14小于开口13d，13e。

2. 发明授权

US09411143B2 Optical device for microscopic observation 有权
标题翻译：用于显微镜观察的光学装置
公开(公告)号：US09411143B2
公开(公告)日：2016-08-09
申请号：US14124280
申请日：2012-05-17
申请人： Tomonori Nakamura , Ikuo Arata , Yoshihiro Ito
发明人： Tomonori Nakamura , Ikuo Arata , Yoshihiro Ito
IPC分类号： G02B21/00 , G02B21/02 , G02B21/28 , G02B21/04 , G02B5/00 , G02B27/00
CPC分类号： G02B21/361 , G02B5/006 , G02B21/0004 , G02B21/0016 , G02B21/04 , G02B21/16 , G02B21/248 , G02B27/0018
摘要： An optical device for microscopic observation 4 comprises: a cold stop 13 having openings 13d, 13e corresponding to a low-magnification microscope optical system 5 and being a stop member arranged in a vacuum vessel 12 to let the light from the sample S pass to the camera 3; a warm stop 10 having an opening 14 corresponding to a high-magnification microscope optical system 5 and being a stop member arranged outside the vacuum vessel 12 to let the light from the sample S pass toward the cold stop 13; and a support member 11 supporting the warm stop 10 so that the warm stop can be inserted to or removed from on the optical axis of the light from the sample S, wherein the warm stop 10 has a reflective surface 15 on the camera 3 side and wherein the opening 14 is smaller than the openings 13d, 13e.
摘要翻译：用于显微镜观察的光学装置4包括：具有对应于低倍率显微镜光学系统5的开口13d，13e的冷止端13，并且是设置在真空容器12中以使来自样品S的光通过到相机3; 具有对应于高倍率显微镜光学系统5的开口14的热止动件10，并且是设置在真空容器12外部以使来自样品S的光通向冷止器13的止动构件; 以及支撑暖挡件10的支撑构件11，使得暖挡件可以插入到来自样品S的光的光轴上或从其上移除，其中暖挡件10在相机3侧具有反射表面15，其中开口14小于开口13d，13e。

3. 发明申请

US20130120563A1 IMAGE GENERATION DEVICE 审中-公开
标题翻译：图像生成装置
公开(公告)号：US20130120563A1
公开(公告)日：2013-05-16
申请号：US13806486
申请日：2011-06-17
申请人： Hirotoshi Terada , Yoshitake Iwaki , Tomonori Nakamura , Teruo Takahashi
发明人： Hirotoshi Terada , Yoshitake Iwaki , Tomonori Nakamura , Teruo Takahashi
IPC分类号： G01B11/02
CPC分类号： G01B11/022 , G02B5/001 , G02B21/0016 , G02B21/002
摘要： An image generation device 1 comprises a laser light source 3, a laser output control unit 11, a laser scanner 5, a modulation pattern control unit 15 for such control as to irradiate the object with illumination light having a plurality of spatial modulation patterns, an electric signal detector 7 for detecting an electric signal issued from the object A, an electric signal imaging unit 17 for generating a two-dimensional characteristic image including characteristic distribution information associating illumination position information with characteristic information, and an image data operation unit 19 for generating a pattern image of the object A according to a plurality of characteristic images generated so as to correspond to the plurality of spatial modulation patterns.
摘要翻译：图像生成装置1包括激光光源3，激光输出控制部11，激光扫描器5，调制图案控制部15，用于对具有多个空间调制图案的照明光照射物体的控制，用于检测从对象A发出的电信号的电信号检测器7，用于产生包括将照明位置信息与特征信息相关联的特征分布信息的二维特征图像的电信号成像单元17和用于产生根据生成的与多个空间调制图案对应的多个特征图像，对象A的图案图像。

4. 发明申请

US20110119323A1 MOBILE COMMUNICATION NETWORK SYSTEM AND SERVER APPARATUS 失效
标题翻译：移动通信网络系统和服务器设备
公开(公告)号：US20110119323A1
公开(公告)日：2011-05-19
申请号：US12519643
申请日：2007-12-12
申请人： Sohei Tani , Tomonori Nakamura , Hisashi Hamada
发明人： Sohei Tani , Tomonori Nakamura , Hisashi Hamada
IPC分类号： G06F15/16
CPC分类号： H04L67/04 , H04L67/02
摘要： A mobile communication network system and server apparatus enabling the time for a mobile terminal apparatus to acquire content to be sufficiently reduced. In a mobile communication network system provided with a cellular telephone 10 having the browser function, and a mobile communication center 11 that manages mobile communication in the cellular telephone 10 via a mobile communication network 13, upon receiving a request for Web access from the cellular telephone 10, the mobile communication center 11 determines whether the request meets a predetermined condition, and when the request meets the predetermined condition, executes pipeline processing for enabling HTTP requests from the cellular telephone 10 to be continuously received.
摘要翻译：一种移动通信网络系统和服务器装置，其能够使移动终端装置获取足够减少的内容的时间。在设置有具有浏览器功能的蜂窝电话10的移动通信网络系统中，以及移动通信中心11，其通过移动通信网络13管理蜂窝电话10中的移动通信，当从蜂窝电话接收到对Web访问的请求时如图10所示，移动通信中心11判断请求是否满足预定条件，并且当请求满足预定条件时，执行流水线处理，以便连续接收来自蜂窝电话10的HTTP请求。

5. 发明申请

US20070134897A1 Process for producing schottky junction type semiconductor device 失效
标题翻译：肖特基结型半导体器件的制造方法
公开(公告)号：US20070134897A1
公开(公告)日：2007-06-14
申请号：US10594044
申请日：2005-03-25
申请人： Tomonori Nakamura , Hidekazu Tsuchida , Toshiyuki Miyanagi
发明人： Tomonori Nakamura , Hidekazu Tsuchida , Toshiyuki Miyanagi
IPC分类号： H01L21/28
CPC分类号： H01L29/872 , H01L29/47 , H01L29/6606
摘要： A process for producing a Schottky junction type semiconductor device includes the steps of forming a Schottky electrode on a surface of a silicon carbide epitaxial layer, wherein a Schottky electrode made of molybdenum, tungsten, or an alloy thereof is formed on the surface of the silicon carbide epitaxial layer and is subjected to heat treatment so as to induce an alloying reaction at an interface of the silicon carbide epitaxial layer and the Schottky electrode, thereby forming an alloy layer at the interface, whereby the height of a Schottky barrier is controlled while maintaining an n-factor at a nearly constant low value.
摘要翻译：制造肖特基结型半导体器件的方法包括以下步骤：在碳化硅外延层的表面上形成肖特基电极，其中在硅的表面上形成由钼，钨或其合金制成的肖特基电极碳化物外延层进行热处理，以在碳化硅外延层和肖特基电极的界面处引起合金化反应，从而在界面处形成合金层，由此在保持肖特基势垒的高度的同时，一个几乎不变的低值的n因子。

6. 发明授权

US08271580B2 Mobile communication network system and server apparatus 失效
标题翻译：移动通信网络系统和服务器设备
公开(公告)号：US08271580B2
公开(公告)日：2012-09-18
申请号：US12519643
申请日：2007-12-12
申请人： Sohei Tani , Tomonori Nakamura , Hisashi Hamada
发明人： Sohei Tani , Tomonori Nakamura , Hisashi Hamada
IPC分类号： G06F15/16
CPC分类号： H04L67/04 , H04L67/02
摘要： A mobile communication network system and server apparatus enabling the time for a mobile terminal apparatus to acquire content to be sufficiently reduced. In a mobile communication network system provided with a cellular telephone 10 having the browser function, and a mobile communication center 11 that manages mobile communication in the cellular telephone 10 via a mobile communication network 13, upon receiving a request for Web access from the cellular telephone 10, the mobile communication center 11 determines whether the request meets a predetermined condition, and when the request meets the predetermined condition, executes pipeline processing for enabling HTTP requests from the cellular telephone 10 to be continuously received.
摘要翻译：一种移动通信网络系统和服务器装置，其能够使移动终端装置获取足够减少的内容的时间。在设置有具有浏览器功能的蜂窝电话10的移动通信网络系统中，以及移动通信中心11，其通过移动通信网络13管理蜂窝电话10中的移动通信，当从蜂窝电话接收到对Web访问的请求时如图10所示，移动通信中心11判断请求是否满足预定条件，并且当请求满足预定条件时，执行流水线处理，以便连续接收来自蜂窝电话10的HTTP请求。

7. 发明授权

US08178940B2 Schottky barrier diode and method for using the same 失效
标题翻译：肖特基势垒二极管及其使用方法
公开(公告)号：US08178940B2
公开(公告)日：2012-05-15
申请号：US12094922
申请日：2006-11-22
申请人： Tomonori Nakamura , Hidekazu Tsuchida , Toshiyuki Miyanagi
发明人： Tomonori Nakamura , Hidekazu Tsuchida , Toshiyuki Miyanagi
IPC分类号： H01L29/872
CPC分类号： H01L29/872 , H01L29/0615 , H01L29/1608 , H01L29/47 , H01L29/6606
摘要： An intermediate metal film is formed between a Schottky electrode and a pad electrode. A Schottky barrier height between the intermediate metal film and a silicon carbide epitaxial film is equivalent to or higher than a Schottky barrier height between the Schottky electrode and the silicon carbide epitaxial film. By this configuration, an excess current and a leak current through a pin-hole can be suppressed even in the case in which a Schottky barrier height between the pad electrode and the silicon carbide epitaxial film is less than the Schottky barrier height between the Schottky electrode and the silicon carbide epitaxial film.
摘要翻译：在肖特基电极和焊盘电极之间形成中间金属膜。中间金属膜和碳化硅外延膜之间的肖特基势垒高度等于或高于肖特基电极和碳化硅外延膜之间的肖特基势垒高度。通过这种结构，即使在焊盘电极和碳化硅外延膜之间的肖特基势垒高度小于肖特基电极之间的肖特基势垒高度的情况下，也可以抑制通过针孔的过剩电流和漏电流和碳化硅外延膜。

8. 发明授权

US08033655B2 Pressure-regulating valve, functional liquid supplying apparatus, imaging apparatus, method of manufacturing electro-optic device, electro-optic device, and electronic apparatus 有权
标题翻译：压力调节阀，功能液体供给装置，成像装置，电光装置的制造方法，电光装置和电子装置
公开(公告)号：US08033655B2
公开(公告)日：2011-10-11
申请号：US12258516
申请日：2008-10-27
申请人： Tomonori Nakamura
发明人： Tomonori Nakamura
IPC分类号： B41J2/175
CPC分类号： G05D16/0644 , B41J2/17596 , Y10T137/7836
摘要： In a pressure-regulating valve which supplies a functional liquid from a functional liquid tank to a functional liquid droplet ejection head, using, as a reference regulating pressure, atmospheric pressure which a diaphragm receives, a valve-disc energizing spring, which energizes a valve disc for opening and closing a communication passage communicating a primary chamber and a secondary chamber, is configured so as to be separated from a housing main body along with a lid body.
摘要翻译：在将来自功能液体罐的功能液体供给到功能性液滴喷射头的压力调节阀中，使用隔膜接收的大气压作为参考调节压力，对阀门通电的阀盘供能弹簧用于打开和关闭连通主室和次室的连通通道的盘被构造成与盖体一起与壳体主体分离。

9. 发明授权

US07960738B2 Silicon carbide semiconductor device and manufacturing method therefor 失效
公开(公告)号：US07960738B2
公开(公告)日：2011-06-14
申请号：US12801681
申请日：2010-06-21
申请人： Koji Nakayama , Yoshitaka Sugawara , Katsunori Asano , Hidekazu Tsuchida , Isaho Kamata , Toshiyuki Miyanagi , Tomonori Nakamura
发明人： Koji Nakayama , Yoshitaka Sugawara , Katsunori Asano , Hidekazu Tsuchida , Isaho Kamata , Toshiyuki Miyanagi , Tomonori Nakamura
IPC分类号： H01L29/15 , H01L31/0312
CPC分类号： H01L29/868 , H01L29/045 , H01L29/0619 , H01L29/1608 , H01L29/66068 , H01L29/73 , H01L29/7397
摘要： With a view to preventing increases in forward voltage due to a change with the lapse of time of a bipolar semiconductor device using a silicon carbide semiconductor, a buffer layer, a drift layer and other p-type and n-type semiconductor layers are formed on a growth surface, which is given by a surface of a crystal of a silicon carbide semiconductor having an off-angle θ of 8 degrees from a (000-1) carbon surface of the crystal, at a film growth rate having a film-thickness increasing rate per hour h of 10 μm/h, which is three times or more higher than conventional counterparts. The flow rate of silane and propane material gases and dopant gases is largely increased to enhance the film growth rate.

10. 发明申请

US20100258817A1 Silicon carbide semiconductor device and manufacturing method therefor 失效
公开(公告)号：US20100258817A1
公开(公告)日：2010-10-14
申请号：US12801681
申请日：2010-06-21
申请人： Koji Nakayama , Yoshitaka Sugawara , Katsunori Asano , Hidekazu Tsuchida , Isaho Kamata , Toshiyuki Miyanagi , Tomonori Nakamura
发明人： Koji Nakayama , Yoshitaka Sugawara , Katsunori Asano , Hidekazu Tsuchida , Isaho Kamata , Toshiyuki Miyanagi , Tomonori Nakamura
IPC分类号： H01L29/24
CPC分类号： H01L29/868 , H01L29/045 , H01L29/0619 , H01L29/1608 , H01L29/66068 , H01L29/73 , H01L29/7397
摘要： With a view to preventing increases in forward voltage due to a change with the lapse of time of a bipolar semiconductor device using a silicon carbide semiconductor, a buffer layer, a drift layer and other p-type and n-type semiconductor layers are formed on a growth surface, which is given by a surface of a crystal of a silicon carbide semiconductor having an off-angle θ of 8 degrees from a (000-1) carbon surface of the crystal, at a film growth rate having a film-thickness increasing rate per hour h of 10 μm/h, which is three times or more higher than conventional counterparts. The flow rate of silane and propane material gases and dopant gases is largely increased to enhance the film growth rate.

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