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1. 发明授权

US09824803B2 Magnetic refrigeration material and manufacturing method of magnetic refrigeration material 有权
公开(公告)号：US09824803B2
公开(公告)日：2017-11-21
申请号：US14344269
申请日：2012-09-12
申请人： Tomonori Fujinaka , Nobuyoshi Sakakibara
发明人： Tomonori Fujinaka , Nobuyoshi Sakakibara
IPC分类号： H01F1/01 , C22C38/00 , F25B21/00 , C22C38/02 , C22C33/02 , B22F3/11 , B22F3/105
CPC分类号： H01F1/015 , B22F3/11 , B22F2003/1051 , B22F2202/06 , B22F2202/13 , C22C33/02 , C22C33/0278 , C22C38/00 , C22C38/002 , C22C38/005 , C22C38/02 , C22C2202/02 , F25B21/00 , F25B2321/002
摘要： A magnetic refrigeration material includes an alloy represented by a composition formula of La(Fe, Si)13H, and the alloy includes α-Fe by a weight ratio lower than 1 wt % and a plurality of pores so that a packing fraction of the alloy is within a range from 85% to 99%.

2. 发明申请

US20140341773A1 MAGNETIC REFRIGERATION MATERIAL AND MANUFACTURING METHOD OF MAGNETIC REFRIGERATION MATERIAL 有权
标题翻译：磁性制冷材料的磁性制冷材料及其制造方法
公开(公告)号：US20140341773A1
公开(公告)日：2014-11-20
申请号：US14344269
申请日：2012-09-12
申请人： Tomonori Fujinaka , Nobuyoshi Sakakibara
发明人： Tomonori Fujinaka , Nobuyoshi Sakakibara
IPC分类号： H01F1/01 , C22C38/00 , C22C38/02 , F25B21/00
CPC分类号： H01F1/015 , B22F3/11 , B22F2003/1051 , B22F2202/06 , B22F2202/13 , C22C33/02 , C22C33/0278 , C22C38/00 , C22C38/002 , C22C38/005 , C22C38/02 , C22C2202/02 , F25B21/00 , F25B2321/002
摘要： A magnetic refrigeration material includes alloy represented by a composition formula of La(Fe, Si)13H, and the alloy includes α-Fe by a weight ratio lower than 1 wt % and a plurality of pores so that a packing fraction of the alloy is within a range from 85% to 99%.
摘要翻译：磁性制冷材料包括由组成式La（Fe，Si）13H表示的合金，合金包括重量比低于1重量％的α-Fe和多个孔，使得合金的填充率为在85％至99％的范围内。

3. 发明授权

US5153700A Crystal-etched matching faces on semiconductor chip and supporting semiconductor substrate 失效
标题翻译：半导体芯片和支撑半导体基板上的晶体表面匹配
公开(公告)号：US5153700A
公开(公告)日：1992-10-06
申请号：US643585
申请日：1991-01-22
申请人： Fumio Ohara , Toshiyuki Kawai , Nobuyoshi Sakakibara , Seizi Huzino , Tadashi Hattori , Kazunori Kawamoto
发明人： Fumio Ohara , Toshiyuki Kawai , Nobuyoshi Sakakibara , Seizi Huzino , Tadashi Hattori , Kazunori Kawamoto
IPC分类号： H01L21/60 , H01L23/13 , H01L23/538 , H01L29/06
CPC分类号： H01L24/32 , H01L23/13 , H01L23/5384 , H01L24/24 , H01L24/82 , H01L29/0657 , H01L2224/24137 , H01L2224/24225 , H01L2224/24227 , H01L2224/73267 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01023 , H01L2924/01033 , H01L2924/01322 , H01L2924/014 , H01L2924/04953 , H01L2924/10157 , H01L2924/10158 , H01L2924/12042 , H01L2924/14 , H01L2924/15153 , H01L2924/15165
摘要： Semiconductor chips are mounted in a supporting semiconductor substrate, with matching anisotropic (crystal plane) faces on the chips and substrate. The chips may extend above the substrate to facilitate connection together.

4. 发明授权

US4689056A Air cleaner using ionic wind 失效
标题翻译：空气净化器使用离子风
公开(公告)号：US4689056A
公开(公告)日：1987-08-25
申请号：US902014
申请日：1986-08-29
申请人： Hiroki Noguchi , Toshiki Kobayashi , Akira Fukami , Tadashi Hattori , Nobuyoshi Sakakibara , Teiichi Nabeta
发明人： Hiroki Noguchi , Toshiki Kobayashi , Akira Fukami , Tadashi Hattori , Nobuyoshi Sakakibara , Teiichi Nabeta
IPC分类号： B03C3/12 , B03C3/00
CPC分类号： B03C3/12
摘要： An air cleaner using an ionic wind having discharge electrodes, a counter electrode arranged downstream of the discharge electrodes, and first and second parallel plate electrodes arranged alternately downstream of the counter electrode. The second parallel plate electrodes are connected to a potential pick-up electrode arranged in the vicinity of the discharge electrodes. The first and second parallel plate electrodes which are arranged alternately serve as dust collecting electrodes.
摘要翻译：使用具有放电电极的离子风的空气净化器，配置在放电电极下游的对置电极以及交替配置在对置电极下游的第一，第二平行板电极。第二平行板电极连接到布置在放电电极附近的吸电极。交替排列的第一和第二平行板电极用作集尘电极。

5. 发明授权

US5900391A High temperature superconducting thin film deposition method 失效
标题翻译：高温超导薄膜沉积法
公开(公告)号：US5900391A
公开(公告)日：1999-05-04
申请号：US756555
申请日：1996-11-26
申请人： Nobuyoshi Sakakibara , Hiroki Hoshizaki , Yoshiki Ueno
发明人： Nobuyoshi Sakakibara , Hiroki Hoshizaki , Yoshiki Ueno
IPC分类号： C01G1/00 , C01G3/00 , C04B35/622 , C23C14/08 , C23C14/34 , C23C14/54 , H01B12/06 , H01B13/00 , H01L39/02 , H01L39/24 , H01P3/08
CPC分类号： H01L39/2435 , C04B35/62218 , C23C14/087 , C23C14/34 , C23C14/541 , Y10S505/731
摘要： Herein disclosed is a method for depositing a high Tc superconducting thin film. The superconducting thin film is deposited on one surface of a substrate. The substrate is exposed to an electromagnetic wave to heat the substrate during the process for depositing the superconducting thin film. Before the processes for depositing the superconducting thin film and exposing the substrate to the electromagnetic wave, a dummy film is formed on the other surface of the substrate. The dummy film has absorbency of the electromagnetic wave which is higher than that of the substrate. The dummy film together with the substrate is exposed to the electromagnetic wave while the superconducting thin film is deposited on the one surface of the substrate. The superconducting thin film thus deposited has superconductivity and high quality crystal structure.
摘要翻译：这里公开了一种沉积高Tc超导薄膜的方法。超导薄膜沉积在衬底的一个表面上。在沉积超导薄膜的过程中，将衬底暴露于电磁波以加热衬底。在沉积超导薄膜并将衬底暴露于电磁波的过程之前，在衬底的另一个表面上形成虚拟膜。该虚拟膜具有比基板高的电磁波的吸收性。将虚设膜与基板一起暴露于电磁波，同时将超导薄膜沉积在基板的一个表面上。这样沉积的超导薄膜具有超导性和高质量的晶体结构。

6. 发明授权

US5635730A Superconducting oxide thin film device 失效
标题翻译：超导氧化物薄膜器件
公开(公告)号：US5635730A
公开(公告)日：1997-06-03
申请号：US467122
申请日：1995-06-06
申请人： Nobuyoshi Sakakibara
发明人： Nobuyoshi Sakakibara
IPC分类号： C01G1/00 , C01G3/00 , C23C14/08 , C30B29/22 , H01L39/02 , H01L39/24 , H01L29/06 , H01L39/22
CPC分类号： H01L39/2461
摘要： A superconducting oxide thin film device is composed of a LaAlO.sub.3 substrate and a YBCO thin film with a BaCeO.sub.3 buffer layer disposed between the two. The adhesion between the film and the substrate is increased by the presence of the buffer layer. The buffer layer also inhibits peeling of the film from the substrate and diffusion of Ba from the film into the substrate.
摘要翻译：超导氧化物薄膜器件由LaAlO 3衬底和设置在两者之间的BaCeO 3缓冲层的YBCO薄膜组成。通过缓冲层的存在，膜和基板之间的粘附性增加。缓冲层还抑制膜从基板剥离并将Ba从膜扩散到基板中。

7. 发明授权

US4992846A Polycrystalline silicon active layer for good carrier mobility 失效
标题翻译：多晶硅活性层，具有良好的载流子迁移率
公开(公告)号：US4992846A
公开(公告)日：1991-02-12
申请号：US549547
申请日：1990-07-09
申请人： Nobuyoshi Sakakibara , Mitutaka Katada , Seizi Huzino , Tadashi Hattori
发明人： Nobuyoshi Sakakibara , Mitutaka Katada , Seizi Huzino , Tadashi Hattori
IPC分类号： H01L29/78 , H01L21/02 , H01L21/20 , H01L21/324 , H01L21/336 , H01L21/822 , H01L21/84 , H01L27/06 , H01L27/092 , H01L27/12 , H01L29/786
CPC分类号： H01L29/66757 , H01L21/2022 , H01L21/8221 , H01L27/0688 , H01L27/092 , H01L29/78675
摘要： In a method of producing a semiconductor device, an amorphous silicon layer is deposited on a polycrystalline silicon layer formed on an insulator layer (SiO.sub.2). Ions are implanted into the amorphous silicon layer while heat treating the amorphous silicon layer at a low temperature thereby forming a solid-phase growth layer, and a transistor is formed of the solid-phase growth layer.
摘要翻译：在制造半导体器件的方法中，非晶硅层沉积在形成在绝缘体层（SiO 2）上的多晶硅层上。同时在低温下对非晶硅层进行热处理，从而形成固相生长层，并且由固相生长层形成晶体管，将离子注入到非晶硅层中。

8. 发明授权

US4673416A Air cleaning apparatus 失效
标题翻译：空气净化装置
公开(公告)号：US4673416A
公开(公告)日：1987-06-16
申请号：US874820
申请日：1986-06-12
申请人： Nobuyoshi Sakakibara , Tadashi Hattori , Kazuhiko Miura , Hiroki Noguchi , Akira Fukami , Teiichi Nabeta
发明人： Nobuyoshi Sakakibara , Tadashi Hattori , Kazuhiko Miura , Hiroki Noguchi , Akira Fukami , Teiichi Nabeta
IPC分类号： B03C3/12 , B03C3/41 , B03C3/60 , B03C3/66 , F24F1/00
CPC分类号： B03C3/12 , B03C3/60 , B03C3/66
摘要： An air cleaning apparatus having an electrical dust collecting section has discharge electrodes, electrical field forming electrodes arranged parallel to the flow of charged particles, and dust collecting electrodes each of which is arranged between corresponding two adjacent electrical field forming electrodes to be parallel thereto. One high voltage power source is arranged to generate a potential difference between the discharge electrodes and the dust collecting electrodes. Another high voltage power source is arranged to generate a potential difference between the electrical field forming electrodes and the dust collecting electrodes. Negative electrodes consisting of either the electrical field forming electrodes or the dust collecting electrodes are covered by insulator members.
摘要翻译：具有电集尘部的空气净化装置具有放电电极，与带电粒子的流动平行设置的电场形成电极，以及各自与相邻的两个相邻的电场形成电极平行的集尘电极。一个高压电源被布置成产生放电电极和集尘电极之间的电位差。布置另一高压电源以产生电场形成电极和集尘电极之间的电位差。由电场形成电极或集尘电极组成的负极由绝缘体部件覆盖。

9. 发明授权

US5017505A Method of making a nonvolatile semiconductor memory apparatus with a floating gate 失效
标题翻译：制造具有浮动栅极的非易失性半导体存储装置的方法
公开(公告)号：US5017505A
公开(公告)日：1991-05-21
申请号：US313898
申请日：1989-02-23
申请人： Tetsuo Fujii , Toshio Sakakibara , Nobuyoshi Sakakibara
发明人： Tetsuo Fujii , Toshio Sakakibara , Nobuyoshi Sakakibara
IPC分类号： H01L29/788
CPC分类号： H01L29/7883 , Y10S438/964
摘要： A first polysilicon film serving as an erase gate is deposited on the major surface of a semiconductor substrate on which a field oxide film is formed, so that the surface of the first polysilicon film is roughened. The surface of the first polysilicon film is thermally oxidized to form a first thermal oxide film thereon. During the oxidation, the roughened surface of the first polysilicon film is flattened, and is duplicated by the surface of the first thermal oxide film. A second polysilicon film is deposited on the roughened surface of the first thermal oxide film. The back surface of the second polysilicon film is roughened by the roughened surface of the first thermal oxide film. In this case, the surface of the second polysilicon film is also roughened. The roughened surface of the second polysilicon film is thermally oxidized in the same manner as described above to flatten its surface and to form a second thermal oxide film, the surface of which is roughened. A third polysilicon film serving as a write gate is formed on the second thermal oxide film.
摘要翻译：用作擦除栅极的第一多晶硅膜沉积在其上形成有场氧化膜的半导体衬底的主表面上，使得第一多晶硅膜的表面被粗糙化。第一多晶硅膜的表面被热氧化以在其上形成第一热氧化膜。在氧化期间，第一多晶硅膜的粗糙化表面变平，并被第一热氧化膜的表面复制。在第一热氧化膜的粗糙化表面上沉积第二多晶硅膜。第二多晶硅膜的背面被第一热氧化膜的粗糙化表面粗糙化。在这种情况下，第二多晶硅膜的表面也被粗糙化。第二多晶硅膜的粗糙化表面以与上述相同的方式被热氧化以使其表面变平，并形成第二热氧化膜，其表面被粗糙化。在第二热氧化膜上形成用作写入栅极的第三多晶硅膜。

10. 发明授权

US4819037A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US4819037A
公开(公告)日：1989-04-04
申请号：US57027
申请日：1987-06-03
申请人： Nobuyoshi Sakakibara , Mitutaka Katada , Minoru Ohta , Tadashi Hattori , Takayuki Tominaga
发明人： Nobuyoshi Sakakibara , Mitutaka Katada , Minoru Ohta , Tadashi Hattori , Takayuki Tominaga
IPC分类号： H01L27/08 , H01L21/336 , H01L21/76 , H01L21/762 , H01L21/764 , H01L21/8234 , H01L21/8238 , H01L27/088 , H01L27/092 , H01L29/78 , H01L29/786 , H01L27/12
CPC分类号： H01L29/66712 , H01L21/76245 , H01L21/76264 , H01L21/764 , H01L21/8238 , H01L27/0922 , H01L21/76289
摘要： In a semiconductor device having mainly vertical semiconductor elements, a plurality of semiconductor elements are formed in spaced relationship from each other on an insulation layer formed on a substrate and therefore completed isolated electrically from each other. A plurality of semiconductor intermetallic compound layers used as electrodes are formed independently in the same spaced relationship as the semiconductor elements for the respective semiconductor elements, making it possible to determine the potential for each semiconductor element as desired. Both N-type DMOS and P-type DMOS or the like can thus be formed on a single seminconductor single crystal substrate.
摘要翻译：在主要具有垂直半导体元件的半导体器件中，在形成于衬底上的绝缘层上形成彼此间隔开的多个半导体元件，由此完成彼此电绝缘。用作电极的多个半导体金属间化合物层以与用于各个半导体元件的半导体元件相同的间隔的关系独立地形成，使得可以根据需要确定每个半导体元件的电位。因此，可以在单个半导体单晶基板上形成N型DMOS和P型DMOS等。

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