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1. 发明申请

US20100065918A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100065918A1
公开(公告)日：2010-03-18
申请号：US12561862
申请日：2009-09-17
申请人： Daisuke Ikeno , Tomonori Aoyama , Kazuaki Nakajima , Seiji Inumiya , Takashi Shimizu , Takuya Kobayashi
发明人： Daisuke Ikeno , Tomonori Aoyama , Kazuaki Nakajima , Seiji Inumiya , Takashi Shimizu , Takuya Kobayashi
IPC分类号： H01L27/092 , H01L21/8238
CPC分类号： H01L21/823807 , H01L21/823828
摘要： A semiconductor device includes a semiconductor substrate containing a p-type diffusion layer and an n-type diffusion layer which are separated by an element separation film; a gate insulating film formed on or above the p-type diffusion layer and the n-type diffusion layer of the semiconductor substrate, respectively; a gate electrode containing a metallic film and formed on the gate insulating film; a Ge inclusion formed at an interface between the gate insulating film and the metallic film; and a silicon-containing layer formed on the metallic film.
摘要翻译：半导体器件包括由元件分离膜分离的包含p型扩散层和n型扩散层的半导体衬底; 分别形成在所述p型扩散层和所述半导体衬底的n型扩散层上或之上的栅绝缘膜; 含有金属膜并形成在栅极绝缘膜上的栅电极; 形成在栅极绝缘膜和金属膜之间的界面处的Ge夹杂物; 以及形成在金属膜上的含硅层。

2. 发明授权

US07989896B2 Semiconductor device and method of fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07989896B2
公开(公告)日：2011-08-02
申请号：US12612238
申请日：2009-11-04
申请人： Tomonori Aoyama , Seiji Inumiya , Kazuaki Nakajima , Takashi Shimizu
发明人： Tomonori Aoyama , Seiji Inumiya , Kazuaki Nakajima , Takashi Shimizu
IPC分类号： H01L27/11
CPC分类号： H01L21/823462 , H01L21/823412 , H01L21/823807 , H01L21/823857 , H01L27/0629 , H01L29/517
摘要： A method of fabricating a semiconductor device according to one embodiment includes: laying out a first region, a second region, a third region and a fourth region on a semiconductor substrate by forming an element isolation region in the semiconductor substrate; forming a first insulating film on the first region and the second region; forming a first semiconductor film on the first insulating film; forming a second insulating film and an aluminum oxide film thereon on the fourth region after forming of the first semiconductor film; forming a third insulating film and a lanthanum oxide film thereon on the third region after forming of the first semiconductor film; forming a high dielectric constant film on the aluminum oxide film and the lanthanum oxide film; forming a metal film on the high dielectric constant film; forming a second semiconductor film on the first semiconductor film and the metal film; and patterning the first insulating film, the first semiconductor film, the second insulating film, the aluminum oxide film, the third insulating film, the lanthanum oxide film, the high dielectric constant film, the metal film and the second semiconductor film.
摘要翻译：根据一个实施例的制造半导体器件的方法包括：通过在半导体衬底中形成元件隔离区，在半导体衬底上铺设第一区域，第二区域，第三区域和第四区域; 在所述第一区域和所述第二区域上形成第一绝缘膜; 在所述第一绝缘膜上形成第一半导体膜; 在形成第一半导体膜之后的第四区域上形成第二绝缘膜和氧化铝膜; 在形成第一半导体膜之后，在第三区域上形成第三绝缘膜和氧化镧膜; 在氧化铝膜和氧化镧膜上形成高介电常数膜; 在高介电常数膜上形成金属膜; 在所述第一半导体膜和所述金属膜上形成第二半导体膜; 以及图案化第一绝缘膜，第一半导体膜，第二绝缘膜，氧化铝膜，第三绝缘膜，氧化镧膜，高介电常数膜，金属膜和第二半导体膜。

3. 发明申请

US20100133626A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100133626A1
公开(公告)日：2010-06-03
申请号：US12612238
申请日：2009-11-04
申请人： Tomonori Aoyama , Seiji Inumiya , Kazuaki Nakajima , Takashi Shimizu
发明人： Tomonori Aoyama , Seiji Inumiya , Kazuaki Nakajima , Takashi Shimizu
IPC分类号： H01L27/06 , H01L21/28 , H01L21/8236
CPC分类号： H01L21/823462 , H01L21/823412 , H01L21/823807 , H01L21/823857 , H01L27/0629 , H01L29/517
摘要： A method of fabricating a semiconductor device according to one embodiment includes: laying out a first region, a second region, a third region and a fourth region on a semiconductor substrate by forming an element isolation region in the semiconductor substrate; forming a first insulating film on the first region and the second region; forming a first semiconductor film on the first insulating film; forming a second insulating film and an aluminum oxide film thereon on the fourth region after forming of the first semiconductor film; forming a third insulating film and a lanthanum oxide film thereon on the third region after forming of the first semiconductor film; forming a high dielectric constant film on the aluminum oxide film and the lanthanum oxide film; forming a metal film on the high dielectric constant film; forming a second semiconductor film on the first semiconductor film and the metal film; and patterning the first insulating film, the first semiconductor film, the second insulating film, the aluminum oxide film, the third insulating film, the lanthanum oxide film, the high dielectric constant film, the metal film and the second semiconductor film.
摘要翻译：根据一个实施例的制造半导体器件的方法包括：通过在半导体衬底中形成元件隔离区，在半导体衬底上铺设第一区域，第二区域，第三区域和第四区域; 在所述第一区域和所述第二区域上形成第一绝缘膜; 在所述第一绝缘膜上形成第一半导体膜; 在形成第一半导体膜之后的第四区域上形成第二绝缘膜和氧化铝膜; 在形成第一半导体膜之后，在第三区域上形成第三绝缘膜和氧化镧膜; 在氧化铝膜和氧化镧膜上形成高介电常数膜; 在高介电常数膜上形成金属膜; 在所述第一半导体膜和所述金属膜上形成第二半导体膜; 以及图案化第一绝缘膜，第一半导体膜，第二绝缘膜，氧化铝膜，第三绝缘膜，氧化镧膜，高介电常数膜，金属膜和第二半导体膜。

4. 发明授权

US08198155B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US08198155B2
公开(公告)日：2012-06-12
申请号：US12693985
申请日：2010-01-26
申请人： Daisuke Ikeno , Tomonori Aoyama , Kazuaki Nakajima , Seiji Inumiya , Takashi Shimizu , Takuya Kobayashi
发明人： Daisuke Ikeno , Tomonori Aoyama , Kazuaki Nakajima , Seiji Inumiya , Takashi Shimizu , Takuya Kobayashi
IPC分类号： H01L21/8234 , H01L21/8238 , H01L29/51
CPC分类号： H01L21/823842 , H01L21/28088 , H01L21/823807 , H01L21/82385 , H01L29/1054 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/6659
摘要： A semiconductor device according to an embodiment of the present invention includes an N-type transistor formed in a first region on a substrate, and a P-type transistor formed in a second region on the substrate. The device includes the substrate, a first gate insulation film formed on the substrate in the first and second regions, and containing silicon, a second gate insulation film formed on the first gate insulation film in the first region, and containing first metal and oxygen, a third gate insulation film formed on the first gate insulation film in the second region, and containing second metal different from the first metal and oxygen, a fourth gate insulation film formed on the second and third gate insulation films in the first and second regions, and containing hafnium, and a gate electrode layer formed on the fourth gate insulation film in the first and second regions, and containing metal and nitrogen, a thickness of the gate electrode layer formed in the second region being greater than a thickness of the gate electrode layer formed in the first region.
摘要翻译：根据本发明的实施例的半导体器件包括形成在衬底上的第一区域中的N型晶体管和形成在衬底上的第二区域中的P型晶体管。该器件包括衬底，形成在第一和第二区域的衬底上并含有硅的第一栅极绝缘膜，形成在第一区域中的第一栅极绝缘膜上并且包含第一金属和氧的第二栅极绝缘膜，形成在所述第二区域中的所述第一栅极绝缘膜上并且包含不同于所述第一金属和氧的第二金属的第三栅极绝缘膜，形成在所述第一和第二区域中的所述第二和第三栅极绝缘膜上的第四栅极绝缘膜，并且含有铪，以及形成在第一和第二区域中的第四栅极绝缘膜上并且包含金属和氮的栅极电极层，在第二区域中形成的栅电极层的厚度大于栅电极的厚度层形成在第一区域中。

5. 发明申请

US20100187612A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100187612A1
公开(公告)日：2010-07-29
申请号：US12693985
申请日：2010-01-26
申请人： Daisuke IKENO , Tomonori Aoyama , Kazuaki Nakajima , Seiji Inumiya , Takashi Shimizu , Takuya Kobayashi
发明人： Daisuke IKENO , Tomonori Aoyama , Kazuaki Nakajima , Seiji Inumiya , Takashi Shimizu , Takuya Kobayashi
IPC分类号： H01L27/092 , H01L21/8238
CPC分类号： H01L21/823842 , H01L21/28088 , H01L21/823807 , H01L21/82385 , H01L29/1054 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/6659
摘要： A semiconductor device according to an embodiment of the present invention includes an N-type transistor formed in a first region on a substrate, and a P-type transistor formed in a second region on the substrate. The device includes the substrate, a first gate insulation film formed on the substrate in the first and second regions, and containing silicon, a second gate insulation film formed on the first gate insulation film in the first region, and containing first metal and oxygen, a third gate insulation film formed on the first gate insulation film in the second region, and containing second metal different from the first metal and oxygen, a fourth gate insulation film formed on the second and third gate insulation films in the first and second regions, and containing hafnium, and a gate electrode layer formed on the fourth gate insulation film in the first and second regions, and containing metal and nitrogen, a thickness of the gate electrode layer formed in the second region being greater than a thickness of the gate electrode layer formed in the first region.
摘要翻译：根据本发明的实施例的半导体器件包括形成在衬底上的第一区域中的N型晶体管和形成在衬底上的第二区域中的P型晶体管。该器件包括衬底，形成在第一和第二区域的衬底上并含有硅的第一栅极绝缘膜，形成在第一区域中的第一栅极绝缘膜上并且包含第一金属和氧的第二栅极绝缘膜，形成在所述第二区域中的所述第一栅极绝缘膜上并且包含不同于所述第一金属和氧的第二金属的第三栅极绝缘膜，形成在所述第一和第二区域中的所述第二和第三栅极绝缘膜上的第四栅极绝缘膜，并且含有铪，以及形成在第一和第二区域中的第四栅极绝缘膜上并且包含金属和氮的栅极电极层，在第二区域中形成的栅电极层的厚度大于栅电极的厚度层形成在第一区域中。

6. 发明授权

US09174368B2 Retardation film, method of producing the same and image display device 有权
标题翻译：延迟膜，其制造方法和图像显示装置
公开(公告)号：US09174368B2
公开(公告)日：2015-11-03
申请号：US12725581
申请日：2010-03-17
申请人： Toshiyuki Iida , Takahiro Nakai , Takashi Shimizu , Tsutomu Hani
发明人： Toshiyuki Iida , Takahiro Nakai , Takashi Shimizu , Tsutomu Hani
IPC分类号： C09K19/00 , B29C41/28 , B29C55/04 , C09D163/10 , G02B5/30 , G02F1/13363 , B29C35/08 , B29K33/00 , B29K63/00
CPC分类号： B29C41/28 , B29C35/0805 , B29C55/04 , B29C2035/0827 , B29K2033/08 , B29K2063/00 , B29K2995/0034 , C09D163/10 , G02B5/3083 , G02F1/13363 , Y10T428/1036
摘要： The retardation film of the present invention contains at least one of an epoxy resin cured product and an epoxy (meth)acrylate resin cured product. In the retardation film of the present invention, in-plane birefringence index thereof at a wavelength of 590 nm is preferably 0.001 or more and a birefringence index in a thickness direction thereof at a wavelength of 590 nm is preferably 0.001 or more.
摘要翻译：本发明的延迟膜含有环氧树脂固化物和环氧（甲基）丙烯酸酯树脂固化物中的至少一种。在本发明的相位差膜中，波长590nm的面内双折射率优选为0.001以上，波长590nm的双折射率优选为0.001以上。

7. 发明授权

US09141084B2 Cartridge configured of two units and image forming apparatus that accommodates the cartridge 有权
标题翻译：由两个单元构成的盒和容纳盒的图像形成装置
公开(公告)号：US09141084B2
公开(公告)日：2015-09-22
申请号：US14141863
申请日：2013-12-27
申请人： Takashi Shimizu
发明人： Takashi Shimizu
IPC分类号： G03G15/00 , G03G21/18
CPC分类号： G03G21/1839 , G03G21/1817 , G03G21/1875 , G03G21/1896 , G03G2221/1892
摘要： A cartridge mountable in an image forming apparatus includes a first unit that stores developer and a second unit that accommodates the first unit. The first unit includes a first detected part configured to be displaced irreversibly from a first-unit new-product position to a first-unit used position upon receipt of a driving force from the image forming apparatus, the first detected part contacting a detector provided in the image forming apparatus while being displaced from the first-unit new-product position to the first-unit used position to be detected by the detector. The second unit includes a second detected part configured to be displaced irreversibly from a second-unit new-product position to a second-unit used position upon receipt of a driving force from the image forming apparatus, the second detected part contacting the detector while being displaced from the second-unit new-product position to the second-unit used position to be detected by the detector.
摘要翻译：可安装在图像形成装置中的盒式存储器包括存储显影剂的第一单元和容纳第一单元的第二单元。第一单元包括第一检测部件，其被配置为在接收到来自图像形成装置的驱动力时从第一单元新产品位置不可逆地移位到第一单元使用位置，第一检测部件接触设置在图像形成装置从第一单元新产品位置移动到由检测器检测的第一单元使用位置。第二单元包括被接收来自图像形成装置的驱动力而不可逆地从第二单元新产品位置移动到第二单元使用位置的第二检测部件，第二检测部件与第二检测部件接触检测器，同时从第二单元新产品位置移动到由检测器检测到的第二单元使用位置。

8. 发明授权

US08768212B2 Process unit and image-forming device using process unit 有权
标题翻译：处理单元和成像装置使用处理单元
公开(公告)号：US08768212B2
公开(公告)日：2014-07-01
申请号：US13305926
申请日：2011-11-29
申请人： Junichi Hashimoto , Takashi Shimizu
发明人： Junichi Hashimoto , Takashi Shimizu
IPC分类号： G03G15/04 , G03G15/08
CPC分类号： G03G15/0813 , G03G21/1821 , G03G2215/0636
摘要： A process unit includes an image bearing member, a first frame, a developing unit, a pressing assembly, and a pressing-force adjusting assembly. The first frame supports the image bearing member. The developing unit includes a developing roller and a second frame supporting the developing roller. The pressing assembly generates a first pressing force acting on the developing unit such that the developing roller is in pressure contact with the image bearing member. The pressing-force adjusting assembly contacts one of the first frame and the developing unit and generates a second pressing force acting on the developing unit against the first pressing force. The second pressing force is smaller than the first pressing force.
摘要翻译：处理单元包括图像承载部件，第一框架，显影单元，按压组件和按压力调节组件。第一框架支撑图像承载构件。显影单元包括显影辊和支撑显影辊的第二框架。按压组件产生作用在显影单元上的第一按压力，使得显影辊与图像承载部件压力接触。按压力调节组件接触第一框架和显影单元中的一个，并产生抵抗第一按压力作用在显影单元上的第二按压力。第二按压力小于第一按压力。

9. 发明申请

US20140135158A1 POWER TRANSMISSION SYSTEM FOR VEHICLE 审中-公开
标题翻译：车辆动力传动系统
公开(公告)号：US20140135158A1
公开(公告)日：2014-05-15
申请号：US14131728
申请日：2011-07-11
申请人： Naoki Tamura , Takashi Shimizu
发明人： Naoki Tamura , Takashi Shimizu
IPC分类号： F16H57/03
CPC分类号： F16H57/03 , F16H9/18 , F16H57/028 , F16H57/035
摘要： A power transmission system for a vehicle includes a bowl-shaped peripheral wall for housing a power transmission member and a structure is provided to inhibit a circular standing wave mode that is generated in the bowl-shaped peripheral wall during power transmission. A resonance frequency [f] is increased in a surface of a bowl-shaped peripheral wall that is provided with a rib while the resonance frequency [f] is reduced in a surface of the bowl-shaped peripheral wall that is provided with a mass. It is possible to inhibit excitation of the circular standing wave mode generated in the bowl-shaped peripheral wall by changing the resonance frequency [f] between a peripheral wall surface of the housing that is provided with the rib and a peripheral wall surface thereof that is provided with the mass.
摘要翻译：一种用于车辆的动力传递系统包括用于容纳动力传递构件的碗状周壁，并且设置用于抑制在动力传递期间在碗状周壁中产生的圆形驻波模式的结构。在设置有肋的碗状周壁的表面中，在设置有质量的碗状周壁的表面中的共振频率[f]减小时，共振频率[f]增加。可以通过改变设置有肋的壳体的周壁面与其周壁面之间的共振频率[f]来抑制在碗形周壁中产生的圆形驻波模式的激发，提供与群众。

10. 发明授权

US08659560B2 Input device and display apparatus including the same 有权
标题翻译：输入装置和包括其的显示装置
公开(公告)号：US08659560B2
公开(公告)日：2014-02-25
申请号：US12892600
申请日：2010-09-28
申请人： Yasunari Nagata , Takashi Shimizu , Natsuko Yamagata , Akinori Satou , Takashi Minami , Yoshio Miyazaki
发明人： Yasunari Nagata , Takashi Shimizu , Natsuko Yamagata , Akinori Satou , Takashi Minami , Yoshio Miyazaki
IPC分类号： G06F3/041
CPC分类号： G06F3/044 , G06F2203/04111
摘要： An input device includes a substrate including a first principal surface and a second principal surface opposite the first principal surface; a plurality of first detecting electrodes disposed on the second principal surface of the substrate; a plurality of second detecting electrodes disposed on the second principal surface of the substrate; at least one first connecting electrode disposed on the second principal surface of the substrate, the first connecting electrode being configured to connect adjacent first detecting electrodes to each other; at least one second connecting electrode including an intersection that is spaced from the second principal surface of the substrate and crosses the first connecting electrode, the second connecting electrode being configured to connect adjacent second detecting electrodes to each other; and a light diffusing member disposed at least in an area corresponding to the intersection.
摘要翻译：输入装置包括：基板，包括第一主表面和与第一主表面相对的第二主表面; 设置在所述基板的所述第二主面上的多个第一检测电极; 多个第二检测电极，设置在基板的第二主表面上; 至少一个第一连接电极，设置在所述基板的第二主表面上，所述第一连接电极被配置为将相邻的第一检测电极彼此连接; 至少一个第二连接电极，包括与所述基板的所述第二主表面间隔开并与所述第一连接电极相交的交点，所述第二连接电极被配置为将相邻的第二检测电极彼此连接; 以及至少设置在与交叉点对应的区域中的光漫射构件。

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