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1. 发明授权

US5888859A Method of fabricating semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5888859A
公开(公告)日：1999-03-30
申请号：US748912
申请日：1996-11-15
申请人： Tomoki Oku , Shinichi Miyakuni , Nobuyuki Kasai , Yasutaka Kohno, deceased
发明人： Tomoki Oku , Shinichi Miyakuni , Nobuyuki Kasai , Yasutaka Kohno, deceased
IPC分类号： H01L21/28 , H01L21/285 , H01L21/3213 , H01L21/331 , H01L21/338 , H01L29/08 , H01L29/205 , H01L29/423 , H01L29/43 , H01L29/47 , H01L29/73 , H01L29/737 , H01L29/812
CPC分类号： H01L29/66863 , H01L21/28587 , H01L21/32139 , H01L29/0891 , H01L29/42316 , H01L29/475 , H01L29/66878 , H01L29/8128
摘要： A method of making a semiconductor device includes forming a recess in a compound semiconductor substrate using a patterned insulating film on a surface of the substrate, implanting dopant ions at the bottom of the recess to form a channel region, and depositing a refractory metal film. The refractory metal film is etched, using a resist pattern, to form a gate electrode and additional dopant ions are implanted to form relatively highly doped regions intersecting the channel region. Very highly doped regions are formed my implantation, after removing the insulating film, using the gate electrode and remainder of the resist mask as an implantation mask. After stripping the resist, annealing to activate the implanted ions, and depositing a passivating film on the substrate and gate electrode, source and drain electrodes are formed. The field effect transistor thus produced has a high breakdown voltage, improved reliability, a highly controlled pinch-off voltage, and improved transconductance and operating speed.
摘要翻译：制造半导体器件的方法包括：在衬底的表面上使用图案化的绝缘膜在化合物半导体衬底中形成凹陷，在凹部的底部注入掺杂离子以形成沟道区，并沉积难熔金属膜。使用抗蚀剂图案蚀刻难熔金属膜以形成栅电极，并且注入另外的掺杂剂离子以形成与沟道区相交的相对高掺杂的区域。在去除绝缘膜之后，使用栅电极和抗蚀剂掩模的其余部分作为注入掩模，形成非常高掺杂的区域。在剥离抗蚀剂之后，退火以激活注入的离子，并且在衬底和栅电极，源电极和漏极上形成钝化膜。这样产生的场效应晶体管具有高的击穿电压，改进的可靠性，高度控制的截止电压以及改进的跨导和操作速度。

2. 发明授权

US6013926A Semiconductor device with refractory metal element 失效
$Semiconductor device with refractory metal element$
标题翻译：具有难熔金属元件的半导体器件
公开(公告)号：US6013926A
公开(公告)日：2000-01-11
申请号：US837458
申请日：1997-04-18
申请人： Tomoki Oku , Naohito Yoshida , Shinichi Miyakuni , Toshihiko Shiga
发明人： Tomoki Oku , Naohito Yoshida , Shinichi Miyakuni , Toshihiko Shiga
IPC分类号： H01L29/41 , H01L21/285 , H01L21/3205 , H01L21/335 , H01L21/338 , H01L29/778 , H01L29/812 , H03H3/02 , H01L29/80 , H01L31/0328 , H01L31/112
CPC分类号： H01L29/66446 , H01L21/28581 , H01L21/28587 , H01L29/66462 , H01L29/66878 , H01L29/7783 , H01L29/8128 , H03H3/02
摘要： A semiconductor device includes a self-aligned refractory metal constituent in a recess in a semiconductor substrate and having the same plane pattern as a bottom surface of the recess. The width of the constituent is determined by the plane pattern of the recess and, accordingly, the pattern width of the constituent is easily controlled by the plane pattern of the recess.
摘要翻译：半导体器件包括在半导体衬底的凹部中的自对准难熔金属成分，并具有与凹部的底面相同的平面图案。构成物的宽度由凹部的平面图形决定，因此容易通过凹部的平面图案来控制构件的图案宽度。

3. 发明授权

US5726468A Compound semiconductor bipolar transistor 失效
标题翻译：复合半导体双极晶体管
公开(公告)号：US5726468A
公开(公告)日：1998-03-10
申请号：US614688
申请日：1996-03-13
申请人： Tomoki Oku , Hirofumi Nakano , Shinichi Miyakuni , Teruyuki Shimura , Ryo Hattori
发明人： Tomoki Oku , Hirofumi Nakano , Shinichi Miyakuni , Teruyuki Shimura , Ryo Hattori
IPC分类号： H01L29/41 , H01L21/28 , H01L21/302 , H01L21/3065 , H01L21/3205 , H01L21/331 , H01L23/52 , H01L29/205 , H01L29/423 , H01L29/43 , H01L29/73 , H01L29/732 , H01L29/737 , H01L31/0328 , H01L31/0336
CPC分类号： H01L29/7371 , H01L29/42304
摘要： A semiconductor device includes a semiconductor substrate; a first active layer disposed on the semiconductor substrate; a second active layer disposed on the first active layer; a first electrode including a lower stage disposed on the second active layer and an upper stage disposed on the lower stage and having an overhanging portion protruding from the lower stage; an insulating film continuously covering a surface of the second active layer, a side surface of the lower stage of the first electrode, and a lower surface and a side surface of the overhanging portion of the upper stage; and a second electrode disposed on the surface of the first active layer at opposite sides of the second active layer, self-aligned with the second active layer. The distance between the second electrode and the second active layer is minimized and the thickness of the second electrode can be about 7000 .ANG., minimizing the resistance of the first active layer and improving high frequency characteristics. Electrical separation between the first and second active layers can be achieved reliably. Recombination at the surface of the second active layer is suppressed.
摘要翻译：半导体器件包括半导体衬底; 设置在所述半导体衬底上的第一有源层; 设置在所述第一有源层上的第二有源层; 第一电极，其包括设置在第二有源层上的下层和设置在下层上的上层，具有从下层突出的突出部; 绝缘膜，连续地覆盖第二有源层的表面，第一电极的下层的侧表面，以及上层的突出部的下表面和侧表面; 以及第二电极，其设置在所述第二有源层的与所述第二有源层自对准的所述第二有源层的相对侧的所述表面上。第二电极和第二有源层之间的距离被最小化，并且第二电极的厚度可以是约7000，使第一有源层的电阻最小化并提高高频特性。可以可靠地实现第一和第二有源层之间的电气分离。第二活性层的表面的重组被抑制。

4. 发明授权

US5675159A Recessed gate field effect transistor 失效
标题翻译：嵌入栅场效应晶体管
公开(公告)号：US5675159A
公开(公告)日：1997-10-07
申请号：US583384
申请日：1996-01-05
申请人： Tomoki Oku , Nobuyuki Kasai
发明人： Tomoki Oku , Nobuyuki Kasai
IPC分类号： H01L21/28 , H01L21/285 , H01L21/302 , H01L21/3065 , H01L21/338 , H01L29/41 , H01L29/812
CPC分类号： H01L29/66863 , H01L21/28587 , H01L29/8128
摘要： A semiconductor device includes a compound semiconductor body having a recess, the recess having a bottom and a hollow, and a refractory metal gate electrode having a lower portion within the hollow. The compound semiconductor body includes a compound semiconductor substrate; a channel layer including a compound semiconductor of a first conductivity type, the channel layer being located on the substrate between the gate electrode and the substrate; first active layers of the compound semiconductor and of the first conductivity type located on regions of the substrate in the recess where the channel layer is not present; and second active layers of the compound semiconductor and of the first conductivity type located on regions of the substrate in the recess where the channel layer is not present; and second active layers of the compound semiconductor of the first conductivity type located on regions of the substrate sandwiching the recess. Therefore, the controllable region in the channel layer is not adversely affected by a depletion layer produced at the interface between the first active layers and a passivation film, whereby an unwanted reduction in the control speed in the channel layer due to the charging and discharging of carriers in traps at the interface is avoided.
摘要翻译：半导体器件包括具有凹部的化合物半导体本体，凹部具有底部和中空，以及在中空部内具有下部的难熔金属栅电极。化合物半导体本体包括化合物半导体衬底; 包括第一导电类型的化合物半导体的沟道层，沟道层位于栅电极和衬底之间的衬底上; 化合物半导体的第一有源层和位于不存在沟道层的凹部中的基板的区域上的第一导电类型; 以及位于不存在沟道层的凹部中的基板的区域上的化合物半导体的第一有源层和第一导电类型; 以及位于所述基板的夹着所述凹部的区域上的所述第一导电类型的化合物半导体的第二有源层。因此，沟道层中的可控区域不受在第一有源层和钝化膜之间的界面处产生的耗尽层的不利影响，由此由于充电和放电导致的沟道层中的控制速度的不期望的降低避免了接口处的陷阱中的载波。

5. 发明申请

US20120060614A1 IMAGE SENSING DEVICE 审中-公开
标题翻译：图像传感装置
公开(公告)号：US20120060614A1
公开(公告)日：2012-03-15
申请号：US13228507
申请日：2011-09-09
申请人： Masahiro YOSHIDA , Tomoki Oku , Tatsuo Koga , Kazuma Hara , Hisatoshi Oomae , Hideto Shimaoka
发明人： Masahiro YOSHIDA , Tomoki Oku , Tatsuo Koga , Kazuma Hara , Hisatoshi Oomae , Hideto Shimaoka
IPC分类号： G01N29/00
CPC分类号： H04N5/772
摘要： An image sensing device according to the present invention includes: an optical portion that is driven to form an optical image in any state; a sensor portion that acquires, as an image signal, the optical image formed by the optical portion; a sound collection portion that acquires an acoustic signal by collecting sound; an image sensing environment determination portion that determines an image sensing environment which is an environment under which the sensor portion acquires the image signal; and an operation determination portion that determines, based on the image sensing environment determined by the image sensing environment determination portion, at least one of a drive speed of the optical portion and a method of processing the acoustic signal acquired by the sound collection portion when the optical portion is driven.
摘要翻译：根据本发明的图像感测装置包括：被驱动以形成任何状态的光学图像的光学部分; 获取由所述光学部分形成的光学图像作为图像信号的传感器部分; 声音收集部分，通过收集声音来获取声学信号; 图像感测环境确定部分，其确定作为所述传感器部分获取所述图像信号的环境的图像感测环境; 以及操作确定部分，其基于由所述图像感测环境确定部分确定的图像感测环境，确定所述光学部分的驱动速度和处理由所述声音收集部分获取的所述声学信号的方法中的至少一个，光学部分被驱动。

6. 发明授权

US07704556B2 Silicon nitride film forming method 有权
标题翻译：氮化硅膜形成方法
公开(公告)号：US07704556B2
公开(公告)日：2010-04-27
申请号：US11764745
申请日：2007-06-18
申请人： Hitoshi Morisaki , Yasushi Kamiya , Shuji Nomura , Masahiro Totuka , Tomoki Oku , Ryo Hattori
发明人： Hitoshi Morisaki , Yasushi Kamiya , Shuji Nomura , Masahiro Totuka , Tomoki Oku , Ryo Hattori
IPC分类号： C23C16/34
CPC分类号： C23C16/4411 , C23C16/345 , C23C16/44
摘要： The silicon nitride film forming method deposits a silicon nitride film on the substrate surface by maintaining the heating element at a predetermined temperature and by decomposing and/or activating a raw material gas supplied from the gas supply system.
摘要翻译：氮化硅膜形成方法通过将加热元件保持在预定温度并且通过分解和/或激活从气体供应系统供应的原料气体而将氮化硅膜沉积在基板表面上。

7. 发明授权

US4851680A Josephson junction type radiation energy analyzer 失效
标题翻译：约瑟夫逊结型辐射能量分析仪
公开(公告)号：US4851680A
公开(公告)日：1989-07-25
申请号：US119725
申请日：1987-11-12
申请人： Tomoki Oku
发明人： Tomoki Oku
IPC分类号： G01T1/16 , G01T1/24 , H01L39/10 , H01L39/22
CPC分类号： H01L39/223 , Y10S505/848 , Y10S505/874
摘要： A Josephson junction type radiation energy analyzer comprising: a tunnel junction comprising a triple layer of superconductor-insulator-superconductor; and a metal layer which is provided in contact with one of the superconductors of the tunnel junction and to which radiation is incident.
摘要翻译：约瑟夫逊结型辐射能量分析仪，包括：包括超导体 - 绝缘体 - 超导体的三层的隧道结; 以及金属层，其设置成与隧道结的一个超导体接触并且辐射入射到该金属层。

8. 发明授权

US08428275B2 Wind noise reduction device 有权
标题翻译：风降噪装置
公开(公告)号：US08428275B2
公开(公告)日：2013-04-23
申请号：US12142243
申请日：2008-06-19
申请人： Masahiro Yoshida , Tomoki Oku
发明人： Masahiro Yoshida , Tomoki Oku
IPC分类号： H04B15/00
CPC分类号： H04R3/04 , H04R2410/07 , H04R2430/03
摘要： In a wind noise reduction device that reduces wind noise contained in an input sound signal to generate a corrected sound signal, when a predetermined band including the band of the wind noise is a first band and a predetermined band higher in frequency than the first band is a second band, the wind noise reduction device includes: a first corrector that has a signal generator generating, based on a sound signal (i) contained in the input sound signal and lying in a band higher in frequency than the first band, a sound signal (ii) lying in the first band and different from a sound signal (iii) contained in the input sound signal and lying in the first band, and that generates a first corrected sound signal based on the sound signal (ii) generated by the signal generator; a second corrector that reduces the signal level of a sound signal (iv) contained in the input sound signal and lying in the second band to thereby generate a second corrected sound signal as a sound signal (v) having the wind noise reduced and lying in the second band; and a corrected sound signal outputter that outputs the corrected sound signal based on the first and second corrected sound signals.
摘要翻译：在减少输入声音信号中包含的风噪声以产生经校正的声音信号的风噪声降低装置中，当包括风噪声的频带的预定频带是第一频带和频率比第一频带高的预定频带时第二频带，所述风噪声降低装置包括：第一校正器，其具有信号发生器，其基于包含在所述输入声音信号中并位于比所述第一频带更高频率的频带中的声音信号（i）产生声音信号（ii）位于所述第一频带中，并且不同于包含在所述输入声音信号中并位于所述第一频带中的声音信号（iii），并且基于由所述第一频带所生成的声音信号（ii）产生第一校正声音信号信号发生器; 第二校正器，其降低包含在输入声音信号中并位于第二频带中的声音信号（iv）的信号电平，从而生成第二校正声音信号作为具有降低的风噪声的声音信号（v），并且位于第二乐队以及校正声音信号输出器，其基于第一和第二校正声音信号输出校正的声音信号。

9. 发明授权

US06933250B2 Process for manufacturing a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US06933250B2
公开(公告)日：2005-08-23
申请号：US10274233
申请日：2002-10-21
申请人： Masahiro Totsuka , Tomoki Oku , Ryo Hattori
发明人： Masahiro Totsuka , Tomoki Oku , Ryo Hattori
IPC分类号： C23C16/34 , C23C16/44 , C23C16/455 , C23C16/458 , H01L21/31 , H01L21/318
CPC分类号： C23C16/45512 , C23C16/345 , C23C16/44 , C23C16/4586 , C23C16/463 , H01L21/3185
摘要： A process of manufacturing a semiconductor device uses catalytic chemical vapor deposition. In the process, a reaction chamber containing a catalyzer and a substrate has gasses, including silane, ammonia, and hydrogen supplied to the reaction chamber. The gases are brought into contact with the catalyzer and then with the substrate to deposit a silicon nitride film.
摘要翻译：半导体器件的制造方法使用催化化学气相沉积。在此过程中，含有催化剂和底物的反应室具有供应至反应室的气体，包括硅烷，氨和氢气。使气体与催化剂接触，然后与衬底接触以沉积氮化硅膜。

10. 发明授权

US5399896A FET with a T-shaped gate of a particular structure 失效
标题翻译：具有特定结构的T形门的FET
公开(公告)号：US5399896A
公开(公告)日：1995-03-21
申请号：US141878
申请日：1993-10-27
申请人： Tomoki Oku
发明人： Tomoki Oku
IPC分类号： H01L21/285 , H01L21/335 , H01L21/338 , H01L29/812 , H01L27/085 , H01L29/20
CPC分类号： H01L29/66863 , H01L21/28587 , H01L21/28593 , H01L29/66462
摘要： A method for producing a T-shaped gate electrode of a semiconductor device including forming an insulating film on a semiconductor substrate, etching away a prescribed portion of the insulating film, depositing a metal film having a prescribed thickness, forming a first photoresist film and removing the photoresist film except where the insulating film has been removed, forming a second photoresist film, patterning the second photoresist film to expose the metal film along a side wall of the insulating film, etching away a portion of the metal film using the first and second photoresist films as a mask, depositing a gate metal and removing the first and second photoresist films and overlying gate metal by lift-off, and etching away the metal films remaining on the semiconductor substrate and the insulating film. Thereby, a T-shaped gate electrode with shortened length is formed.
摘要翻译：一种用于制造半导体器件的T形栅电极的方法，包括在半导体衬底上形成绝缘膜，蚀刻绝缘膜的规定部分，沉积具有规定厚度的金属膜，形成第一光致抗蚀剂膜并除去除去绝缘膜以外的光致抗蚀剂膜，形成第二光致抗蚀剂膜，使第二光致抗蚀剂膜图形化，沿着绝缘膜的侧壁露出金属膜，使用第一和第二蚀刻部分去除金属膜的一部分光刻胶膜作为掩模，沉积栅极金属并通过剥离去除第一和第二光致抗蚀剂膜和覆盖栅极金属，并蚀刻残留在半导体衬底和绝缘膜上的金属膜。从而形成具有缩短长度的T形栅电极。

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