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1. 发明申请

US20120276485A1 PATTERNING PROCESS 有权
标题翻译：绘图过程
公开(公告)号：US20120276485A1
公开(公告)日：2012-11-01
申请号：US13456705
申请日：2012-04-26
申请人： Tomohiro Kobayashi , Jun Hatakeyama , Takeshi Nagata
发明人： Tomohiro Kobayashi , Jun Hatakeyama , Takeshi Nagata
IPC分类号： G03F7/20
CPC分类号： G03F7/0397
摘要： A negative pattern is formed by applying a resist composition onto a substrate, baking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to selectively dissolve the unexposed region of resist film. The resist composition comprising a hydrogenated ROMP polymer and a (meth)acrylate resin displays a high dissolution contrast in organic solvent development, and exhibits high dry etch resistance even when the acid labile group is deprotected through exposure and PEB.
摘要翻译：通过将抗蚀剂组合物涂布在基材上，烘烤，暴露于高能量辐射，烘烤（PEB）和在有机溶剂显影剂中曝光的抗蚀剂膜显影以选择性地溶解抗蚀剂膜的未曝光区域，形成负型图案。包含氢化ROMP聚合物和（甲基）丙烯酸酯树脂的抗蚀剂组合物在有机溶剂显影中表现出高的溶解对比度，并且即使当酸不稳定基团通过曝光和PEB脱保护时也显示出高的耐干蚀刻性。

2. 发明授权

US08691494B2 Patterning process 有权
标题翻译：图案化过程
公开(公告)号：US08691494B2
公开(公告)日：2014-04-08
申请号：US13456705
申请日：2012-04-26
申请人： Tomohiro Kobayashi , Jun Hatakeyama , Takeshi Nagata
发明人： Tomohiro Kobayashi , Jun Hatakeyama , Takeshi Nagata
IPC分类号： G03F7/26
CPC分类号： G03F7/0397
摘要： A negative pattern is formed by applying a resist composition onto a substrate, baking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to selectively dissolve the unexposed region of resist film. The resist composition comprising a hydrogenated ROMP polymer and a (meth)acrylate resin displays a high dissolution contrast in organic solvent development, and exhibits high dry etch resistance even when the acid labile group is deprotected through exposure and PEB.
摘要翻译：通过将抗蚀剂组合物涂布在基材上，烘烤，暴露于高能量辐射，烘烤（PEB）和在有机溶剂显影剂中曝光的抗蚀剂膜显影以选择性地溶解抗蚀剂膜的未曝光区域，形成负图案。包含氢化ROMP聚合物和（甲基）丙烯酸酯树脂的抗蚀剂组合物在有机溶剂显影中表现出高的溶解对比度，并且即使当酸不稳定基团通过曝光和PEB脱保护时也显示出高的耐干蚀刻性。

3. 发明授权

US06749988B2 Amine compounds, resist compositions and patterning process 有权
标题翻译：胺化合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US06749988B2
公开(公告)日：2004-06-15
申请号：US09994808
申请日：2001-11-28
申请人： Jun Hatakeyama , Tomohiro Kobayashi , Takeru Watanabe , Takeshi Nagata
发明人： Jun Hatakeyama , Tomohiro Kobayashi , Takeru Watanabe , Takeshi Nagata
IPC分类号： G03C173
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0382
摘要： Novel amine compounds having a nitrogen-containing cyclic structure and a hydrating group such as a hydroxy, ether, ester, carbonyl, carbonate group or lactone ring are useful for use in resist compositions for preventing a resist film from thinning and also for enhancing the resolution and focus margin of resist.
摘要翻译：具有含氮环状结构和羟基，醚，酯，羰基，碳酸酯基或内酯环的水合基团的新型胺化合物可用于防止抗蚀剂膜变薄的抗蚀剂组合物中，并且还用于提高分辨率和抗焦点的边缘。

4. 发明授权

US07449277B2 Positive resist compositions and patterning process 有权
标题翻译：正极抗蚀剂组成和图案化工艺
公开(公告)号：US07449277B2
公开(公告)日：2008-11-11
申请号：US11523792
申请日：2006-09-20
申请人： Jun Hatakeyama , Takeshi Nagata , Takanobu Takeda
发明人： Jun Hatakeyama , Takeshi Nagata , Takanobu Takeda
IPC分类号： G03F7/039 , G03F7/30 , G03C1/00
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/28 , C08F220/30 , G03F7/0046 , Y10S430/108
摘要： A polymer is obtained from (meth)acrylate having a bridged ring lactone group, (meth)acrylate having an acid-labile leaving group, and (meth)acrylate having a hydroxynaphthyl pendant. A positive resist composition comprising the polymer as a base resin, when exposed to high-energy radiation and developed, exhibits a high sensitivity, a high resolution, and a minimal line edge roughness due to controlled swell during development, and leaves minimal residues following development.
摘要翻译：聚合物得自具有桥环内酯基的（甲基）丙烯酸酯，具有酸不稳定离去基的（甲基）丙烯酸酯和具有羟基萘基侧基的（甲基）丙烯酸酯。包含作为基础树脂的聚合物的正性抗蚀剂组合物当暴露于高能量辐射并显影时表现出高灵敏度，高分辨率和由于显影期间的受控膨胀引起的最小线边缘粗糙度，并且在显影后留下最少残留物。

5. 发明授权

US08492078B2 Patterning process 有权
标题翻译：图案化过程
公开(公告)号：US08492078B2
公开(公告)日：2013-07-23
申请号：US13010318
申请日：2011-01-20
申请人： Jun Hatakeyama , Takeshi Nagata , Koji Hasegawa
发明人： Jun Hatakeyama , Takeshi Nagata , Koji Hasegawa
IPC分类号： G03F7/26
CPC分类号： G03F7/0397 , G03F7/0046 , G03F7/11 , G03F7/2041 , G03F7/325
摘要： A pattern is formed by coating a resist composition comprising a polymer comprising recurring units having an optionally acid labile group-substituted naphthol group, an acid generator, and an organic solvent onto a substrate, baking to form a resist film, exposing the resist film to high-energy radiation, baking, and developing the exposed film with an organic solvent developer to form a negative pattern wherein the unexposed region of film is dissolved and the exposed region of film is not dissolved. In the process of image formation via positive/negative reversal by organic solvent development, the resist film has a high dissolution contrast and controlled acid diffusion. By subjecting the resist film to exposure through a mask having a lattice-like pattern and organic solvent development, a fine hole pattern can be formed at a high precision of dimensional control.
摘要翻译：通过将包含含有任选的酸不稳定基取代的萘酚基的重复单元，酸产生剂和有机溶剂的聚合物的抗蚀剂组合物涂布在基材上，烘烤以形成抗蚀剂膜，将抗蚀剂膜暴露于高能辐射，烘烤，并用有机溶剂显影剂显影曝光的薄膜以形成其中未暴露的薄膜区域溶解并且曝光区域不溶解的负图案。在通过有机溶剂显影的正/负反转的图像形成过程中，抗蚀剂膜具有高的溶解对比度和受控的酸扩散。通过使抗蚀剂膜通过具有格子状图案和有机溶剂显影的掩模进行曝光，可以以高精度的尺寸控制形成细孔图案。

6. 发明授权

US5750309A Chemically amplified positive resist composition 失效
标题翻译：化学放大正光刻胶组合物
公开(公告)号：US5750309A
公开(公告)日：1998-05-12
申请号：US684481
申请日：1996-07-19
申请人： Jun Hatakeyama , Shigehiro Nagura , Kiyoshi Motomi , Takeshi Nagata , Toshinobu Ishihara
发明人： Jun Hatakeyama , Shigehiro Nagura , Kiyoshi Motomi , Takeshi Nagata , Toshinobu Ishihara
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106 , Y10S430/111
摘要： In a chemical amplification positive resist composition comprising an organic solvent, a resin and a photoacid generator, at least two polymers having different molecular weights selected from polyhydroxystyrenes having some hydroxyl groups protected with acid labile groups are used. Among the polymers, a high molecular weight polymer has a molecular weight dispersity (Mw1/Mn1) of up to 1.5, and a low molecular weight polymer has a dispersity (Mw2/Mn2) of up to 5.0. The weight average molecular weight ratio Mw1/Mw2 is between 1.5/1 and 10.0/1. The resist composition is highly sensitive to actinic radiation, has improved sensitivity and resolution, and is suitable for use in a fine patterning technique and commercially acceptable.
摘要翻译：在包含有机溶剂，树脂和光致酸发生剂的化学放大正性抗蚀剂组合物中，使用至少两种具有不同分子量的聚合物，其选自具有用酸不稳定基保护的一些羟基的多羟基苯乙烯。在聚合物中，高分子量聚合物的分子量分散性（Mw1 / Mn1）高达1.5，低分子量聚合物的分散性（Mw2 / Mn2）高达5.0。重均分子量Mw1 / Mw2在1.5 / 1和10.0 / 1之间。抗蚀剂组合物对光化辐射高度敏感，具有改进的灵敏度和分辨率，并且适用于精细图案化技术和商业上可接受的。

7. 发明授权

US08440386B2 Patterning process, resist composition, and acetal compound 有权
标题翻译：图案化方法，抗蚀剂组合物和缩醛化合物
公开(公告)号：US08440386B2
公开(公告)日：2013-05-14
申请号：US13053714
申请日：2011-03-22
申请人： Jun Hatakeyama , Takeshi Nagata , Koji Hasegawa
发明人： Jun Hatakeyama , Takeshi Nagata , Koji Hasegawa
IPC分类号： G03F7/00 , G03F7/004 , G03F7/20 , G03F7/32 , G03F7/40
CPC分类号： G03F7/0397 , C07C69/54 , C07C2603/74 , C08F2220/282 , C08F2220/283 , C09D133/14 , C09D133/16 , G03F7/325 , C08F2220/302 , C08F222/06 , C08F2220/382
摘要： A pattern is formed by applying a resist composition comprising a polymer comprising recurring units having an acid labile group-substituted hydroxyl group, an acid generator, and an organic solvent onto a substrate, prebaking the composition to form a resist film, exposing the resist film to high-energy radiation to define exposed and unexposed regions, baking, and developing the exposed film with an organic solvent developer to form a negative pattern wherein the unexposed region of film is dissolved and the exposed region of film is not dissolved.
摘要翻译：通过将包含含有酸不稳定基取代的羟基的重复单元的聚合物，酸产生剂和有机溶剂的抗蚀剂组合物涂布在基材上，预烘烤组合物以形成抗蚀剂膜，使抗蚀剂膜曝光以高能量辐射来限定暴露和未曝光的区域，用有机溶剂显影剂烘烤和显影曝光的膜，以形成其中未暴露的膜的区域溶解并且曝光的区域不溶解的负图案。

8. 发明申请

US20110177462A1 PATTERNING PROCESS 有权
标题翻译：绘图过程
公开(公告)号：US20110177462A1
公开(公告)日：2011-07-21
申请号：US13010318
申请日：2011-01-20
申请人： Jun Hatakeyama , Takeshi Nagata , Koji Hasegawa
发明人： Jun Hatakeyama , Takeshi Nagata , Koji Hasegawa
IPC分类号： G03F7/20
CPC分类号： G03F7/0397 , G03F7/0046 , G03F7/11 , G03F7/2041 , G03F7/325
摘要： A pattern is formed by coating a resist composition comprising a polymer comprising recurring units having an optionally acid labile group-substituted naphthol group, an acid generator, and an organic solvent onto a substrate, baking to form a resist film, exposing the resist film to high-energy radiation, baking, and developing the exposed film with an organic solvent developer to form a negative pattern wherein the unexposed region of film is dissolved and the exposed region of film is not dissolved. In the process of image formation via positive/negative reversal by organic solvent development, the resist film has a high dissolution contrast and controlled acid diffusion. By subjecting the resist film to exposure through a mask having a lattice-like pattern and organic solvent development, a fine hole pattern can be formed at a high precision of dimensional control.
摘要翻译：通过将包含含有任选的酸不稳定基取代的萘酚基的重复单元，酸产生剂和有机溶剂的聚合物的抗蚀剂组合物涂布在基材上，烘烤以形成抗蚀剂膜，将抗蚀剂膜暴露于高能辐射，烘烤，并用有机溶剂显影剂显影曝光的薄膜以形成其中未暴露的薄膜区域溶解并且曝光区域不溶解的负图案。在通过有机溶剂显影的正/负反转的图像形成过程中，抗蚀剂膜具有高的溶解对比度和受控的酸扩散。通过使抗蚀剂膜通过具有格子状图案和有机溶剂显影的掩模进行曝光，可以以高精度的尺寸控制形成细孔图案。

9. 发明申请

US20070072115A1 Positive resist compositions and patterning process 有权
标题翻译：正极抗蚀剂组成和图案化工艺
公开(公告)号：US20070072115A1
公开(公告)日：2007-03-29
申请号：US11523792
申请日：2006-09-20
申请人： Jun Hatakeyama , Takeshi Nagata , Takanobu Takeda
发明人： Jun Hatakeyama , Takeshi Nagata , Takanobu Takeda
IPC分类号： G03C1/00
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/28 , C08F220/30 , G03F7/0046 , Y10S430/108
摘要： A polymer is obtained from (meth)acrylate having a bridged ring lactone group, (meth)acrylate having an acid-labile leaving group, and (meth)acrylate having a hydroxynaphthyl pendant. A positive resist composition comprising the polymer as a base resin, when exposed to high-energy radiation and developed, exhibits a high sensitivity, a high resolution, and a minimal line edge roughness due to controlled swell during development, and leaves minimal residues following development.
摘要翻译：聚合物得自具有桥环内酯基的（甲基）丙烯酸酯，具有酸不稳定离去基的（甲基）丙烯酸酯和具有羟基萘基侧基的（甲基）丙烯酸酯。包含作为基础树脂的聚合物的正性抗蚀剂组合物当暴露于高能量辐射并显影时表现出高灵敏度，高分辨率和由于显影期间的受控膨胀引起的最小线边缘粗糙度，并且在显影后留下最少残留物。

10. 发明授权

US06692893B2 Onium salts, photoacid generators, resist compositions, and patterning process 有权
标题翻译：鎓盐，光酸产生剂，抗蚀剂组合物和图案化方法
公开(公告)号：US06692893B2
公开(公告)日：2004-02-17
申请号：US09983155
申请日：2001-10-23
申请人： Youichi Ohsawa , Jun Watanabe , Takeshi Nagata , Jun Hatakeyama
发明人： Youichi Ohsawa , Jun Watanabe , Takeshi Nagata , Jun Hatakeyama
IPC分类号： G03C173
CPC分类号： G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/0397 , Y10S430/115 , Y10S430/12 , Y10S430/122 , Y10S430/126
摘要： Onium salts of arylsulfonyloxynaphthalenesulfonate anions with iodonium or sulfonium cations are novel. A chemically amplified resist composition comprising the onium salt as a photoacid generator is suited for microfabrication, especially by deep UV lithography because of many advantages including improved resolution, improved focal latitude, minimized line width variation or shape degradation even on long-term PED, minimized debris after coating, development and peeling, and improved pattern profile after development.
摘要翻译：芳基磺酰氧基萘磺酸盐与碘鎓或锍阳离子的鎓盐是新颖的。包含作为光致酸发生剂的鎓盐的化学放大抗蚀剂组合物特别适用于微细加工，特别是通过深紫外光刻技术，因为许多优点，包括改进的分辨率，改善的焦点纬度，最小化的线宽变化或甚至在长期PED下的形状退化涂层，显影和剥离后的碎屑，以及显影后改进的图案轮廓。

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