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    • 5. 发明申请
    • STORAGE APPARATUS AND STORAGE CONTROLLER OF STORAGE APPARATUS
    • 存储设备的存储设备和存储控制器
    • US20140111932A1
    • 2014-04-24
    • US13697440
    • 2012-10-18
    • Tomohiro FukudaKenichi Miyamoto
    • Tomohiro FukudaKenichi Miyamoto
    • G06F1/20
    • H05K7/20718G06F1/20G11B33/128G11B33/142H05K7/18H05K7/20727H05K7/20736
    • Storage apparatus configured to provide an external apparatus with logical storage area as data storage area, the storage apparatus having a physical storage medium configured to generate the logical storage area, and storage controller communicatively coupled to physical storage medium to control data input/output processing between the external apparatus and the logical storage area, wherein the storage controller includes circuit package including circuit board which implements predetermined function of storage controller and a circuit board case to accommodate the circuit board, plurality of cooling fan units that generate cooling air for cooling circuit component mounted on the circuit board of the circuit package, and a chassis having a structure for accommodating the circuit package and the cooling fan units, some of circuit packages are inserted to be accommodated in chassis from opening thereof and are arranged side by side across width direction of chassis.
    • 存储装置,其被配置为向外部设备提供逻辑存储区域作为数据存储区域,所述存储设备具有被配置为生成所述逻辑存储区域的物理存储介质,以及通信地耦合到物理存储介质的存储控制器,以控制数据输入/ 外部装置和逻辑存储区域,其中存储控制器包括电路封装,其包括执行存储控制器的预定功能的电路板和用于容纳电路板的电路板外壳;多个冷却风扇单元,其产生用于冷却电路部件的冷却空气 安装在电路封装的电路板上的底架,以及具有用于容纳电路封装和冷却风扇单元的结构的底盘,一些电路封装被插入以从开口容纳在底盘中,并且跨越宽度方向并排设置 的底盘。
    • 10. 发明授权
    • Manufacturing method for silicon single crystal
    • 硅单晶的制造方法
    • US08535439B2
    • 2013-09-17
    • US12684284
    • 2010-01-08
    • Yasuhito NarushimaToshimichi KubotaShinichi KawazoeFukuo OgawaTomohiro Fukuda
    • Yasuhito NarushimaToshimichi KubotaShinichi KawazoeFukuo OgawaTomohiro Fukuda
    • C30B15/02
    • C30B15/04C30B29/06
    • To provide a manufacturing method for a silicon single crystal that can reduce introduction of dislocation thereinto even if a required amount of dopant is added to a melt while growing a straight body portion of a silicon ingot. In a manufacturing method for a silicon single crystal according to the present invention that includes a dopant addition step of adding a dopant to a melt while a straight body portion of a silicon single crystal is growing in a growth step of growing the silicon single crystal by dipping a seed crystal into a silicon melt and then pulling the seed crystal therefrom, in the dopant addition step, a remaining mass of the melt is calculated at the beginning thereof, and the dopant is added to the melt at a rate of 0.01 to 0.035 g/min·kg per minute per 1 kg of the calculated remaining mass of the melt.
    • 即使在生长硅锭的直体部分的同时在熔体中添加所需量的掺杂剂,也可以提供能够减少位错引入的硅单晶的制造方法。 在根据本发明的硅单晶的制造方法中,包括掺杂剂添加步骤,当在单晶生长的生长步骤中生长硅单晶的生长步骤期间,在硅单晶的直体部分生长步骤期间,向熔体中添加掺杂剂, 将晶种浸入硅熔体中,然后从其中拉出晶种,在掺杂剂添加步骤中,在开始时计算熔体的剩余质量,掺杂剂以0.01至0.035的速率加入到熔体中 g / min·kg / min / 1kg计算的熔体剩余质量。