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1. 发明授权

US08845304B2 Motor-driven compressor 有权
标题翻译：电动压缩机
公开(公告)号：US08845304B2
公开(公告)日：2014-09-30
申请号：US13073750
申请日：2011-03-28
申请人： Tomohiko Sugiyama , Ken Suitou
发明人： Tomohiko Sugiyama , Ken Suitou
IPC分类号： F04B39/14 , F04B53/22 , F04B35/04
CPC分类号： F04B35/04
摘要： The motor-driven compressor is mounted on a mounting of a vehicle. The motor-driven compressor includes a compressor body, a mounting, a damper and a fastener. The compressor body is electrically powered to draw in fluid for compression and to discharge the compressed fluid. The mounting of the compressor is formed on the compressor body and has a mounting hole. The damper is made of a resin and receives therein the mounting of the compressor. The damper is interposed between the compressor body and the mounting of the vehicle and has a through hole. The fastener is inserted through the through hole of the damper and the mounting hole of the compressor for securing the damper to the mounting of the vehicle.
摘要翻译：电动压缩机安装在车辆的安装件上。电动压缩机包括压缩机主体，安装件，阻尼器和紧固件。压缩机主体被电动以吸入压缩流体并排出压缩流体。压缩机的安装形成在压缩机主体上并具有安装孔。阻尼器由树脂制成并在其中容纳压缩机的安装。阻尼器介于压缩机本体和车辆安装件之间，并具有通孔。紧固件通过阻尼器的通孔和压缩机的安装孔插入，以将阻尼器固定到车辆的安装。

2. 发明申请

US20120126293A1 EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE 有权
标题翻译：用于半导体器件的外延衬底，用于制造用于半导体器件的外延衬底的方法和半导体器件
公开(公告)号：US20120126293A1
公开(公告)日：2012-05-24
申请号：US13353759
申请日：2012-01-19
申请人： Shigeaki Sumiya , Makoto Miyoshi , Tomohiko Sugiyama , Mikiya Ichimura , Yoshitaka Kuraoka , Mitsuhiro Tanaka
发明人： Shigeaki Sumiya , Makoto Miyoshi , Tomohiko Sugiyama , Mikiya Ichimura , Yoshitaka Kuraoka , Mitsuhiro Tanaka
IPC分类号： H01L29/205 , H01L21/20
CPC分类号： H01L21/0254 , C30B25/18 , C30B25/183 , C30B29/403 , H01L21/02381 , H01L21/02458 , H01L21/02488 , H01L21/02494 , H01L21/02502 , H01L21/0262 , H01L29/2003 , H01L29/7786 , H01L29/872
摘要： An epitaxial substrate, in which a group of group-III nitride layers is formed on a single-crystal silicon substrate so that a crystal plane is approximately parallel to a substrate surface, comprises: a first group-III nitride layer formed of AlN on the base substrate; a second group-III nitride layer formed of InxxAlyyGazzN (xx+yy+zz=1, 0≦xx≦1, 0
摘要翻译：在单晶硅衬底上形成一组III族氮化物层，使得晶面大致平行于衬底表面的外延衬底包括：由第一III族氮化物层形成的第一III族氮化物层基底; 在第一III族氮化物层上由InxxAlyyGazzN（xx + yy + zz = 1,0,0

3. 发明申请

US20110049570A1 EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE 有权
标题翻译：用于半导体器件的外延衬底，半导体器件及制造用于半导体器件的外延衬底的方法
公开(公告)号：US20110049570A1
公开(公告)日：2011-03-03
申请号：US12853716
申请日：2010-08-10
申请人： Makoto Miyoshi , Yoshitaka Kuraoka , Shigeaki Sumiya , Mikiya Ichimura , Tomohiko Sugiyama , Mitsuhiro Tanaka
发明人： Makoto Miyoshi , Yoshitaka Kuraoka , Shigeaki Sumiya , Mikiya Ichimura , Tomohiko Sugiyama , Mitsuhiro Tanaka
IPC分类号： H01L29/772 , H01L29/201 , H01L29/20 , H01L21/20
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/201
摘要： Provided is an epitaxial substrate capable of achieving a semiconductor device that has excellent ohmic contact characteristics as well as satisfactory device characteristics. On a base substrate, a channel layer formed of a first group III nitride that contains at least Al and Ga and has a composition of Inx1Aly1Gaz1N (x1+y1+z1=1) is formed. On the channel layer, a barrier layer formed of a second group III nitride that contains at least In and Al and has a composition of Inx2Aly2Gaz2N (x2+y2+z2=1) is formed such that an In composition ratio of a near-surface portion is larger than an In composition ratio of a portion other than the near-surface portion.
摘要翻译：提供了能够实现具有优异的欧姆接触特性以及令人满意的器件特性的半导体器件的外延衬底。在基底基板上，形成由至少含有Al和Ga的第一III族氮化物形成的沟道层，并且具有Inx1Aly1Gaz1N（x1 + y1 + z1 = 1）的组成。在沟道层上，形成由至少包含In和Al并且具有In x2 Al y2 Ga z2 N（x2 + y2 + z2 = 1）的组成的第二III族氮化物形成的阻挡层，使得近表面的In组成比部分大于除了近表面部分之外的部分的In组成比。

4. 发明授权

US06333406B1 Gene encoding protein antigens of Plasmodium falciparum and uses therefor 失效
标题翻译：恶性疟原虫的基因编码蛋白抗原及其用途
公开(公告)号：US06333406B1
公开(公告)日：2001-12-25
申请号：US08213419
申请日：1994-03-14
申请人： Joseph W. Inselburg , David J. Bzik , Toshihiro Horii , Tomohiko Sugiyama
发明人： Joseph W. Inselburg , David J. Bzik , Toshihiro Horii , Tomohiko Sugiyama
IPC分类号： C07H2102
CPC分类号： C07K14/445 , A61K39/00 , C12N15/70 , Y02A50/412
摘要： A Plasmodium falciparum gene encoding immunogenic SERA protein has been isolated by a) systematically screening a lambda gt11 recombinant DNA expression library with a murine monoclonal antibody directed against protein antigens of this pathogen, and b) systematically screening a lambda gt11 genomic cDNA and oligonucleotide probes directed against this pathogen. A 111 kDa protein has been shown to have immunogenic activity against parasite inhibitory antibodies. The gene encoding this protein, including the signal sequence and regulatory sequence in the adjacent 5′ flanking sequence has been isolated and sequenced. Isolation and characterization of genes encoding major protein antigens of P. falciparum make it possible to develop reagents useful in the diagnosis, prevention and treatment of malaria. In addition, the signal sequences or regulatory sequences of this gene can be used to stimulate the production of other useful genetic products.
摘要翻译：编码免疫原性SERA蛋白的恶性疟原虫基因已经通过以下方式分离：a）使用针对该病原体的蛋白质抗原的鼠单克隆抗体系统地筛选λgt11重组DNA表达文库，以及b）系统地筛选导向的λgt11基因组cDNA和寡核苷酸探针针对这种病原体。已显示111kDa蛋白具有针对寄生虫抑制性抗体的免疫原性活性。已经分离和测序了编码该蛋白质的基因，包括相邻5'侧翼序列中的信号序列和调节序列。编码恶性疟原虫的主要蛋白质抗原的基因的分离和表征使得可以开发用于诊断，预防和治疗疟疾。此外，该基因的信号序列或调节序列可用于刺激其他有用的遗传产物的产生。

5. 发明授权

US08410552B2 Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device 有权
标题翻译：用于半导体器件的外延衬底，半导体器件和用于半导体器件的外延衬底的制造方法
公开(公告)号：US08410552B2
公开(公告)日：2013-04-02
申请号：US12855744
申请日：2010-08-13
申请人： Makoto Miyoshi , Yoshitaka Kuraoka , Shigeaki Sumiya , Mikiya Ichimura , Tomohiko Sugiyama , Mitsuhiro Tanaka
发明人： Makoto Miyoshi , Yoshitaka Kuraoka , Shigeaki Sumiya , Mikiya Ichimura , Tomohiko Sugiyama , Mitsuhiro Tanaka
IPC分类号： H01L29/066
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/201 , H01L29/66462
摘要： Provided is an epitaxial substrate capable of achieving a semiconductor device that has excellent schottky contact characteristics as well as satisfactory device characteristics. On a base substrate, a channel layer formed of a first group III nitride that contains at least Al and Ga and has a composition of Inx1Aly1Gaz1N (x1+y1+z1=1) is formed. On the channel layer, a barrier layer formed of a second group III nitride that contains at least In and Al and has a composition of Inx2Aly2Gaz2N (x2+y2+z2=1) is formed such that an In composition ratio of a near-surface portion is smaller than an In composition ratio of a portion other than the near-surface portion.
摘要翻译：提供了能够实现具有优异的肖特基接触特性以及令人满意的器件特性的半导体器件的外延衬底。在基底基板上，形成由至少含有Al和Ga的第一III族氮化物形成的沟道层，并且具有Inx1Aly1Gaz1N（x1 + y1 + z1 = 1）的组成。在沟道层上，形成由至少包含In和Al并且具有In x2 Al y2 Ga z2 N（x2 + y2 + z2 = 1）的组成的第二III族氮化物形成的阻挡层，使得近表面的In组成比部分比除了近表面部分之外的部分的In组成比小。

6. 发明授权

US08378386B2 Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device 有权
标题翻译：用于半导体器件的外延衬底，半导体器件和用于半导体器件的外延衬底的制造方法
公开(公告)号：US08378386B2
公开(公告)日：2013-02-19
申请号：US12853716
申请日：2010-08-10
申请人： Makoto Miyoshi , Yoshitaka Kuraoka , Shigeaki Sumiya , Mikiya Ichimura , Tomohiko Sugiyama , Mitsuhiro Tanaka
发明人： Makoto Miyoshi , Yoshitaka Kuraoka , Shigeaki Sumiya , Mikiya Ichimura , Tomohiko Sugiyama , Mitsuhiro Tanaka
IPC分类号： H01L29/778
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/201
摘要： Provided is an epitaxial substrate capable of achieving a semiconductor device that has excellent ohmic contact characteristics as well as satisfactory device characteristics. On a base substrate, a channel layer formed of a first group III nitride that contains at least Al and Ga and has a composition of Inx1Aly1Gaz1N (x1+y1+z1=1) is formed. On the channel layer, a barrier layer formed of a second group III nitride that contains at least In and Al and has a composition of Inx2Aly2Gaz2N (x2+y2+z2=1) is formed such that an In composition ratio of a near-surface portion is larger than an In composition ratio of a portion other than the near-surface portion.
摘要翻译：提供了能够实现具有优异的欧姆接触特性以及令人满意的器件特性的半导体器件的外延衬底。在基底基板上，形成由至少含有Al和Ga的第一III族氮化物形成的沟道层，并且具有Inx1Aly1Gaz1N（x1 + y1 + z1 = 1）的组成。在沟道层上，形成由至少包含In和Al并且具有In x2 Al y2 Ga z2 N（x2 + y2 + z2 = 1）的组成的第二III族氮化物形成的阻挡层，使得近表面的In组成比部分大于除了近表面部分之外的部分的In组成比。

7. 发明申请

US20070188418A1 Electron-emitting apparatus and method for emitting electrons 审中-公开
标题翻译：电子发射装置和发射电子的方法
公开(公告)号：US20070188418A1
公开(公告)日：2007-08-16
申请号：US11251090
申请日：2005-10-14
申请人： Iwao Ohwada , Takayoshi Akao , Naoki Goto , Tomohiko Sugiyama
发明人： Iwao Ohwada , Takayoshi Akao , Naoki Goto , Tomohiko Sugiyama
IPC分类号： G09G3/22
CPC分类号： G09G3/22 , B82Y10/00 , G09G3/2011 , G09G2310/0275 , G09G2310/06 , G09G2310/065 , G09G2310/066 , G09G2320/0238 , G09G2330/02 , G09G2330/021 , H01J1/30 , H01J1/312 , H01J1/32 , H01J31/127
摘要： An electron-emitting apparatus includes an electron-emitting element having a lower electrode, a dielectric emitter section, upper electrodes having micro through holes, and a circuit for applying a drive voltage Vin between the lower and upper electrodes. The drive voltage is applied between the lower and upper electrodes to set an element voltage Vka, which is a potential of the upper electrode relative to a potential of the lower electrode, at a negative voltage for a charge accumulation period Td to accumulate electrons in the emitter section, and to set the element voltage Vka at a predetermined positive voltage for an electron emission period Th to emit electrons from the emitter section. The drive voltage applying circuit stepwise increases the positive voltage during the electron emission period Th and separately emits the electrons accumulated in the emitter section a plurality of times.
摘要翻译：电子发射设备包括具有下电极，电介质发射极部分，具有微通孔的上电极和用于在下电极和上电极之间施加驱动电压Vin的电路的电子发射元件。驱动电压施加在下电极和上电极之间，以将电压相对于下电极的电位设定为负电压的元件电压Vka，在电荷累积期间Td中积蓄电子并且将元件电压Vka设定在预定的正电压，以使电子发射周期Th从发射极部分发射电子。驱动电压施加电路在电子发射时段Th期间逐步增加正电压，并分别发射积极在发射极部分中的电子。

8. 发明申请

US20130032781A1 EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE 有权
标题翻译：外延基板和制造外延基板的方法
公开(公告)号：US20130032781A1
公开(公告)日：2013-02-07
申请号：US13570665
申请日：2012-08-09
申请人： Makoto MIYOSHI , Shigeaki Sumiya , Mikiya Ichimura , Tomohiko Sugiyama , Mitsuhiro Tanaka
发明人： Makoto MIYOSHI , Shigeaki Sumiya , Mikiya Ichimura , Tomohiko Sugiyama , Mitsuhiro Tanaka
IPC分类号： H01L29/15 , H01L21/20
CPC分类号： C30B29/403 , C30B25/18 , C30B25/183 , C30B29/68 , H01L21/02381 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L29/155 , H01L29/7786 , H01L29/872 , H01L33/007 , H01L33/04 , H01L33/12
摘要： Provided is a crack-free epitaxial substrate with reduced warping, in which a silicon substrate is used as a base substrate. The epitaxial substrate includes a (111) single crystal Si substrate, a superlattice layer group in which a plurality of superlattice layers are laminated, and a crystal layer. The superlattice layer is formed of a first unit layer and a second unit layer made of group-III nitrides having different compositions being alternately and repeatedly laminated. The crystal layer is made of a group-III nitride and formed above the base substrate so as to be positioned at an upper side of the superlattice layer group relative to the base substrate. The superlattice layer group has a compressive strain contained therein. In the superlattice layer group, the more distant the superlattice layer is from the base substrate, the greater the compressive strain becomes.
摘要翻译：提供了一种具有减小翘曲的无裂纹外延衬底，其中硅衬底用作基底衬底。外延衬底包括（111）单晶Si衬底，层叠有多个超晶格层的超晶格层组和晶体层。超晶格层由第一单位层和由具有不同组成的III-III族氮化物制成的第二单元层交替地和重复地层叠形成。晶体层由III族氮化物制成，并且形成在基底基板上方，以便相对于基底衬底位于超晶格层组的上侧。超晶格层组中含有压应变。在超晶格层组中，超晶格层离基底越远，压应变越大。

9. 发明申请

US20120168771A1 SEMICONDUCTOR ELEMENT, HEMT ELEMENT, AND METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT 审中-公开
标题翻译：半导体元件，元件元件及制造半导体元件的方法
公开(公告)号：US20120168771A1
公开(公告)日：2012-07-05
申请号：US13415066
申请日：2012-03-08
申请人： Makoto Miyoshi , Shigeaki Sumiya , Mikiya Ichimura , Tomohiko Sugiyama , Mitsuhiro Tanaka
发明人： Makoto Miyoshi , Shigeaki Sumiya , Mikiya Ichimura , Tomohiko Sugiyama , Mitsuhiro Tanaka
IPC分类号： H01L29/778 , H01L21/335 , H01L29/205
CPC分类号： H01L29/7786 , H01L21/28581 , H01L29/2003 , H01L29/475 , H01L29/66462
摘要： A semiconductor device is provided such that a reverse leak current is suppressed, and a Schottky junction is reinforced. The semiconductor device includes an epitaxial substrate formed by laminating a group of group-III nitride layers on a base substrate in such a manner that (0001) surfaces of said group-III nitride layers are substantially parallel to a substrate surface, and a Schottky electrode, in which the epitaxial substrate includes a channel layer formed of a first group-III nitride having a composition of Inx1Aly1Gaz1N, a barrier layer formed of a second group-III nitride having a composition of Inx2Aly2N, and a contact layer formed of a third group-III nitride having insularity and adjacent to the barrier layer, and the Schottky electrode is connected to the contact layer. In addition, a heat treatment is performed under a nitrogen atmosphere after the gate electrode has been formed.
摘要翻译：提供半导体器件，使得抑制反向泄漏电流，并且增强肖特基结。半导体器件包括：外延衬底，其通过在基底衬底上层叠一组III族氮化物层而形成，使得所述III族氮化物层的（0001）表面基本上平行于衬底表面，并且肖特基电极，其中外延衬底包括由具有In x Al 1 Al 1 Ga z N 1的组成的第一III族氮化物形成的沟道层，由具有In x 2 Al 2 N的组成的第二III族氮化物形成的阻挡层和由第三组形成的接触层 -III氮化物与隔离层相邻，并且肖特基电极连接到接触层。此外，在形成栅电极之后，在氮气氛下进行热处理。

10. 发明申请

US20110049571A1 EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE 有权
标题翻译：用于半导体器件的外延衬底，半导体器件及制造用于半导体器件的外延衬底的方法
公开(公告)号：US20110049571A1
公开(公告)日：2011-03-03
申请号：US12855744
申请日：2010-08-13
申请人： Makoto MIYOSHI , Yoshitaka Kuraoka , Shigeaki Sumiya , Mikiya Ichimura , Tomohiko Sugiyama , Mitsuhiro Tanaka
发明人： Makoto MIYOSHI , Yoshitaka Kuraoka , Shigeaki Sumiya , Mikiya Ichimura , Tomohiko Sugiyama , Mitsuhiro Tanaka
IPC分类号： H01L29/78 , H01L29/205 , H01L21/20
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/201 , H01L29/66462
摘要： Provided is an epitaxial substrate capable of achieving a semiconductor device that has excellent schottky contact characteristics as well as satisfactory device characteristics. On a base substrate, a channel layer formed of a first group III nitride that contains at least Al and Ga and has a composition of Inx1Aly1Gaz1N (x1+y1+z1=1) is formed. On the channel layer, a barrier layer formed of a second group III nitride that contains at least In and Al and has a composition of Inx2Aly2Gaz2N (x2+y2+z2=1) is formed such that an In composition ratio of a near-surface portion is smaller than an In composition ratio of a portion other than the near-surface portion.
摘要翻译：提供了能够实现具有优异的肖特基接触特性以及令人满意的器件特性的半导体器件的外延衬底。在基底基板上，形成由至少含有Al和Ga的第一III族氮化物形成的沟道层，并且具有Inx1Aly1Gaz1N（x1 + y1 + z1 = 1）的组成。在沟道层上，形成由至少包含In和Al并且具有In x2 Al y2 Ga z2 N（x2 + y2 + z2 = 1）的组成的第二III族氮化物形成的阻挡层，使得近表面的In组成比部分比除了近表面部分之外的部分的In组成比小。

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