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    • 1. 发明授权
    • Magnetic recording medium
    • 磁记录介质
    • US06969550B2
    • 2005-11-29
    • US10418333
    • 2003-04-18
    • Tomoe SatoTetsuo SamotoShinya YoshidaHitoshi WakoTakashi KanouNaoki IkedaKazuhiko SuzukiSeiichi Onodera
    • Tomoe SatoTetsuo SamotoShinya YoshidaHitoshi WakoTakashi KanouNaoki IkedaKazuhiko SuzukiSeiichi Onodera
    • G11B5/725
    • G11B5/725Y10T428/3154
    • There is provided a magnetic recording medium which exhibits superior lubricating properties and superior tape-transport properties as well as superior robustness even in a low-temperature environment. A magnetic layer containing a ferromagnetic metal is formed on a nonmagnetic support, and a protecting film is formed on the magnetic layer. A lubricant auxiliary coating composition comprising an aromatic alcohol is applied to the protecting film to form a lubricant auxiliary layer, and a lubricant coating composition comprising a compound represented by the formula (1) below is applied to the lubricant auxiliary layer to form a lubricant layer. R1CH(COOR2)CH2COOR3  (1) wherein R1 represents an aliphatic alkyl group, an aliphatic alkenyl group, or a hydrogen atom, and each of R2 and R3 independently represents a fluoroalkyl group, a fluoroalkenyl group, a fluoropolyether group, or a hydrogen atom.
    • 提供了一种磁性记录介质,即使在低温环境下也表现出优异的润滑性能和优异的带传输性能以及优异的鲁棒性。 在非磁性载体上形成含铁磁性金属的磁性层,在磁性层上形成保护膜。 将包含芳香醇的润滑剂辅助涂料组合物施加到保护膜上以形成润滑剂辅助层,并且将润滑剂涂料组合物施加到润滑剂辅助层上以形成润滑层 。 <?in-line-formula description =“在线公式”end =“lead”?> R <1> CH(COOR 2)2 其中R 1表示脂肪族烷基 基团,脂族烯基或氢原子,R 2和R 3各自独立地表示氟代烷基,氟烯基,氟聚醚基或 氢原子。
    • 4. 发明授权
    • Magnetic recording medium
    • 磁记录介质
    • US06803131B2
    • 2004-10-12
    • US10236772
    • 2002-09-06
    • Naoki IkedaSeiichi Onodera
    • Naoki IkedaSeiichi Onodera
    • G11B566
    • G11B5/64Y10S428/90Y10T428/11Y10T428/265
    • Fine projections on a magnetic layer surface are controlled so as to reduce a media noise and improve C/Nmedia characteristic. A magnetic recording medium allows reproduction through a MR head or a GMR head. The magnetic layer on a main surface of a non-magnetic base has a coercive force of 80 KA/m or more and 180 KA/m or less. Assuming that a height of the fine projections is h and a diameter of the fine projections at a half-height h/2 is &phgr;h/2, 99% of the fine projections having a height not less than 10 nm satisfy a relationship as expressed by 100 nm≧&phgr;h/2≧40 nm.
    • 控制磁性层表面上的微细突起,以减少介质噪音并提高C / N媒体特性。 磁记录介质允许通过MR磁头或GMR磁头进行再现。 非磁性基体的主表面上的磁性层的矫顽力为80KA / m以上且180KA / m以下。 假设微细突起的高度为h,半高h / 2处的微细突起的直径为phih / 2,则具有不小于10nm的高度的细突起的99%满足如下表达的关系: 100nm> = phih / 2> = 40nm。
    • 5. 发明授权
    • Method for manufacturing epitaxial wafer
    • 外延晶片制造方法
    • US08920560B2
    • 2014-12-30
    • US11934461
    • 2007-11-02
    • Yasuo KoikeToshiaki OnoNaoki IkedaTomokazu Katano
    • Yasuo KoikeToshiaki OnoNaoki IkedaTomokazu Katano
    • C30B15/14C30B15/20C30B25/20C30B29/06C30B33/02H01L21/322
    • C30B15/206C30B25/20C30B29/06C30B33/02H01L21/3225Y10T428/26
    • A method for manufacturing an epitaxial wafer includes: a step of pulling a single crystal from a boron-doped silicon melt in a chamber based on a Czochralski process; and a step of forming an epitaxial layer on a surface of a silicon wafer sliced from the single crystal. The single crystal is allowed to grow while passed through a temperature region of 800 to 600° C. in the chamber in 250 to 180 minutes during the pulling step. The grown single crystal has an oxygen concentration of 10×1017 to 12×1017 atoms/cm3 and a resistivity of 0.03 to 0.01 Ωcm. The silicon wafer is subjected to pre-annealing prior to the step of forming the epitaxial layer on the surface of the silicon wafer, for 10 minutes to 4 hours at a predetermined temperature within a temperature region of 650 to 900° C. in an inert gas atmosphere. The method is to fabricate an epitaxial wafer that has a diameter of 300 mm or more, and that attains a high IG effect, and involves few epitaxial defects.
    • 一种用于制造外延晶片的方法包括:基于切克劳斯(Czochralski)工艺在腔室中从硼掺杂的硅熔体中拉出单晶的步骤; 以及在从单晶切片的硅晶片的表面上形成外延层的步骤。 在拉伸步骤期间,250至180分钟内,使单晶经过室内800〜600℃的温度区域生长。 生长的单晶的氧浓度为10×1017〜12×1017原子/ cm3,电阻率为0.03〜0.01&OHgr; cm。 在硅晶片的表面上形成外延层的步骤之前,在650-900℃的温度范围内,在惰性的温度范围内,将硅晶片进行预退火10分钟至4小时 气体气氛。 该方法是制造直径为300mm以上的外延晶片,其具有高的IG效应,并且涉及很少的外延缺陷。
    • 9. 发明授权
    • Offset printing press
    • 胶版印刷机
    • US5623873A
    • 1997-04-29
    • US640024
    • 1996-04-30
    • Naoki Ikeda
    • Naoki Ikeda
    • B41F7/40B41F7/06B41F7/02
    • B41F7/40
    • An offset printing press comprises a plate cylinder onto which a printing plate is attached, a form dampening roller having an elasticity on its outer surface, a water fountain roller immersed into water in a water pan, and intermediate roller means for transferring the water from the water fountain roller to the form dampening roller. The intermediate roller means comprises a water oscillating roller which has a hydrophilic property on its outer surface and is capable of reciprocating in its axial direction with contacting the form dampening roller. Also, the offset printing press comprises first moving means for moving the form dampening roller close to and away from the plate cylinder; and second moving means for moving at least one of the water oscillating roller and the form dampening roller so that these two rollers can be moved close to and away from each other.
    • 一种胶版印刷机包括:印版滚筒,其上附有印版,在其外表面上具有弹性的成型润版辊,浸在水盘中的水中的喷水辊;以及中间辊装置,用于将水从 喷水辊形成润版辊。 中间辊装置包括水振荡辊,其在其外表面上具有亲水性,并且能够在与形状阻尼辊接触的同时沿其轴向往复运动。 此外,胶版印刷机包括用于使形状阻尼辊移动靠近和远离印版滚筒的第一移动装置; 以及第二移动装置,用于移动水振荡辊和成形润版辊中的至少一个,使得这两个辊可以彼此靠近和远离地移动。