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1. 发明申请

US20130001792A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20130001792A1
公开(公告)日：2013-01-03
申请号：US13531567
申请日：2012-06-24
申请人： Tomoaki UNO , Yoshitaka Onaya , Hirokazu Kato , Ryotaro Kudo , Koji Saikusa , Katsuhiko Funatsu
发明人： Tomoaki UNO , Yoshitaka Onaya , Hirokazu Kato , Ryotaro Kudo , Koji Saikusa , Katsuhiko Funatsu
IPC分类号： H01L23/48
CPC分类号： H01L23/49575 , H01L23/3107 , H01L23/4824 , H01L23/49524 , H01L23/49562 , H01L24/37 , H01L24/40 , H01L24/73 , H01L2224/05554 , H01L2224/32245 , H01L2224/37011 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/37599 , H01L2224/40095 , H01L2224/40245 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/73221 , H01L2224/73265 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/351 , H02M3/1588 , H02M2001/0009 , Y02B70/1466 , H01L2924/00012 , H01L2924/00 , H01L2924/00014
摘要： A power MOSFET for switching and a sense MOSFET having an area smaller than that of the power MOSFET and configured to detect an electric current flowing through the power MOSFET are formed within one semiconductor chip CPH and the semiconductor chip CPH is mounted over a chip mounting part via an electrically conductive joining material and sealed with a resin. In a main surface of the semiconductor chip CPH, a sense MOSFET region in which the sense MOSFET is formed is located more internally than a source pad PDHS4 of the sense MOSFET region RG2. Furthermore, in the main surface of the semiconductor chip, the sense MOSFET region RG2 is surrounded by a region in which the power MOSFET is formed.
摘要翻译：用于开关的功率MOSFET和具有小于功率MOSFET的面积并且被配置为检测流过功率MOSFET的电流的感测MOSFET形成在一个半导体芯片CPH内，并且半导体芯片CPH安装在芯片安装部分通过导电接合材料并用树脂密封。在半导体芯片CPH的主表面中，形成感测MOSFET的感测MOSFET区域位于读出MOSFET区域RG2的源极焊盘PDHS4的内部。此外，在半导体芯片的主表面中，感测MOSFET区域RG2由形成功率MOSFET的区域包围。

2. 发明授权

US08633550B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08633550B2
公开(公告)日：2014-01-21
申请号：US13531567
申请日：2012-06-24
申请人： Tomoaki Uno , Yoshitaka Onaya , Hirokazu Kato , Ryotaro Kudo , Koji Saikusa , Katsuhiko Funatsu
发明人： Tomoaki Uno , Yoshitaka Onaya , Hirokazu Kato , Ryotaro Kudo , Koji Saikusa , Katsuhiko Funatsu
IPC分类号： H01L27/088
CPC分类号： H01L23/49575 , H01L23/3107 , H01L23/4824 , H01L23/49524 , H01L23/49562 , H01L24/37 , H01L24/40 , H01L24/73 , H01L2224/05554 , H01L2224/32245 , H01L2224/37011 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/37599 , H01L2224/40095 , H01L2224/40245 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/73221 , H01L2224/73265 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/351 , H02M3/1588 , H02M2001/0009 , Y02B70/1466 , H01L2924/00012 , H01L2924/00 , H01L2924/00014
摘要： To improve reliability of a semiconductor deviceA power MOSFET for switching and a sense MOSFET having an area smaller than that of the power MOSFET and configured to detect an electric current flowing through the power MOSFET are formed within one semiconductor chip CPH and the semiconductor chip CPH is mounted over a chip mounting part via an electrically conductive joining material and sealed with a resin. In a main surface of the semiconductor chip CPH, a sense MOSFET region in which the sense MOSFET is formed is located more internally than a source pad PDHS4 of the sense MOSFET region RG2. Furthermore, in the main surface of the semiconductor chip, the sense MOSFET region RG2 is surrounded by a region in which the power MOSFET is formed.
摘要翻译：提高半导体器件的可靠性在一个半导体芯片CPH和半导体芯片CPH内形成用于开关的功率MOSFET和具有小于功率MOSFET的功率MOSFET并且被配置为检测流过功率MOSFET的电流的感测MOSFET 通过导电接合材料安装在芯片安装部分上并用树脂密封。在半导体芯片CPH的主表面中，形成感测MOSFET的感测MOSFET区域位于读出MOSFET区域RG2的源极焊盘PDHS4的内部。此外，在半导体芯片的主表面中，感测MOSFET区域RG2由形成功率MOSFET的区域包围。

3. 发明授权

US09418986B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09418986B2
公开(公告)日：2016-08-16
申请号：US13589160
申请日：2012-08-19
申请人： Tomoaki Uno , Yoshitaka Onaya , Hirokazu Kato , Ryotaro Kudo , Koji Saikusa
发明人： Tomoaki Uno , Yoshitaka Onaya , Hirokazu Kato , Ryotaro Kudo , Koji Saikusa
IPC分类号： H01L27/088 , H01L23/495 , H01L25/16 , H02M1/32 , H02M3/156 , H01L21/8234 , H01L23/00 , H01L25/07 , H02M1/00
CPC分类号： H01L27/088 , H01L21/823487 , H01L23/49524 , H01L23/49562 , H01L23/49575 , H01L24/37 , H01L24/40 , H01L24/73 , H01L25/074 , H01L25/16 , H01L2224/05554 , H01L2224/0603 , H01L2224/32245 , H01L2224/37011 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/3754 , H01L2224/40095 , H01L2224/40245 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/73221 , H01L2224/73265 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H02M1/32 , H02M3/156 , H02M2001/0009 , H01L2924/00012 , H01L2924/00 , H01L2924/00014
摘要： A semiconductor device is improved in reliability. A power MOSFET for switching, and a sense MOSFET for sensing a current flowing in the power MOSFET, which is smaller in area than the power MOSFET, are formed in one semiconductor chip. The semiconductor chip is mounted over a chip mounting portion, and sealed in a resin. To first and second source pads for outputting the current flowing in the power MOSFET, a metal plate is bonded. A third source pad for sensing the source voltage of the power MOSFET is at a position not overlapping the metal plate. A coupled portion between a source wire forming the third pad and another source wire forming the first and second pads is at a position overlapping the metal plate.
摘要翻译：提高了半导体器件的可靠性。在一个半导体芯片中形成用于切换的功率MOSFET和用于感测功率MOSFET中流过的电流的感测MOSFET，该功率MOSFET的面积小于功率MOSFET。半导体芯片安装在芯片安装部分上，并密封在树脂中。对于用于输出在功率MOSFET中流动的电流的第一和第二源极焊盘，金属板被接合。用于感测功率MOSFET的源极电压的第三源极焊盘位于与金属板不重叠的位置。形成第三焊盘的源极线和形成第一和第二焊盘的另一源极之间的耦合部分处于与金属板重叠的位置。

4. 发明授权

US08680830B2 Power supply device 有权
标题翻译：电源设备
公开(公告)号：US08680830B2
公开(公告)日：2014-03-25
申请号：US13229781
申请日：2011-09-12
申请人： Ryotaro Kudo , Tomoaki Uno , Koji Tateno , Hideo Ishii , Kazuyuki Umezu , Koji Saikusa
发明人： Ryotaro Kudo , Tomoaki Uno , Koji Tateno , Hideo Ishii , Kazuyuki Umezu , Koji Saikusa
IPC分类号： G05F1/00
CPC分类号： H02M3/158 , G06F1/26 , H02M3/1584 , H02M2003/1586
摘要： Miniaturization of a multiphase type power supply device can be achieved. A power supply control unit in which, for example, a microcontroller unit, a memory unit and an analog controller unit are formed over a single chip, a plurality of PWM-equipped drive units, and a plurality of inductors configure a multiphase power supply. The microcontroller unit outputs clock signals each having a frequency and a phase defined based on a program on the memory unit to the respective PWM-equipped drive units. The analog controller unit detects a difference between a voltage value of a load and a target voltage value acquired via a serial interface and outputs an error amp signal therefrom. Each of the PWM-equipped drive units drives each inductor by a peak current control system using the clock signal and the error amp signal.
摘要翻译：可以实现多相电源装置的小型化。电源控制单元，其中例如在单个芯片上形成微控制器单元，存储单元和模拟控制器单元，多个配备PWM的驱动单元和多个电感器构成多相电源。微控制器单元输出每个具有基于存储器单元上的程序定义的频率和相位到相应的配备有PWM的驱动单元的时钟信号。模拟控制器单元检测负载的电压值与通过串行接口获取的目标电压值之间的差值，并输出误差放大器信号。每个配备PWM的驱动单元通过使用时钟信号和误差放大器信号的峰值电流控制系统驱动每个电感器。

5. 发明申请

US20100176872A1 Charge Pump Circuit, LCD Driver IC, And Electronic Appliance 失效
标题翻译：电荷泵电路，LCD驱动器IC和电子电器
公开(公告)号：US20100176872A1
公开(公告)日：2010-07-15
申请号：US12067357
申请日：2006-12-01
申请人： Koji Saikusa , Yasunori Kawamura
发明人： Koji Saikusa , Yasunori Kawamura
IPC分类号： G05F1/10
CPC分类号： H02M3/07 , G09G3/3696 , H02J7/0044 , H02M2001/009 , H02M2003/072
摘要： A charge pump circuit 31a of the present invention includes: a step-up capacitor Cc2 charged and discharged in repeated cycles; a charger (SW2a to SW2c) that makes a first end T2a of the step-up capacitor Cc2 conduct to an input voltage VR application terminal and makes a second end T2b of the step-up capacitor Cc2 conduct to a ground terminal GND; a first discharger (SW3a and SW3b) that makes the first end T2a of the step-up capacitor Cc2 conduct to a positive voltage output terminal T3 and makes T2b conduct to VR; a second discharger (SW4a and SW4b) that makes T2a conduct to GND and makes T2b conduct to a negative voltage output terminal T4; a first output capacitor Co1 connected to T3, and a second output capacitor Co2 connected to T4. Each time charging of the step-up capacitor is completed, outputting of a positive voltage by the first discharger and outputting of a negative voltage by the second discharger are alternated. It is preferable that a ratio of the charge period of the step-up capacitor Cc2 to the output periods of the output voltages VGH and VGL be variably controlled. It is preferable that, between the backgate of the SW2c and GND, a switch SW5a be connected that is kept on when the step-up capacitor Cc2 is charged and is kept off otherwise.
摘要翻译：本发明的电荷泵电路31a包括：重复循环充放电的升压电容器Cc2; 使升压电容器Cc2的第一端T2a的导通电压VR施加端子的升压电容器Cc2的第二端T2b导通到接地端子GND的充电器（SW2a〜SW2c）使升压电容器Cc2的第一端T2a导通到正电压输出端子T3并使T2b导通到VR的第一放电器（SW3a，SW3b）使T2a导通到GND并使T2b导通到负电压输出端子T4的第二放电器（SW4a和SW4b）; 连接到T3的第一输出电容器Co1和连接到T4的第二输出电容器Co2。每当升压电容器的充电完成时，由第一放电器输出正电压并由第二放电器输出负电压。优选地，升压电容器Cc2的充电周期与输出电压VGH和VGL的输出周期的比率可以被可变地控制。优选地，在SW2c的背栅和GND之间，连接升压电容器Cc2被充电时保持接通的开关SW5a，否则保持关闭。

6. 发明授权

US07884665B2 Charge pump circuit, LCD driver IC, and electronic appliance 失效
标题翻译：电荷泵电路，LCD驱动器IC和电子设备
公开(公告)号：US07884665B2
公开(公告)日：2011-02-08
申请号：US12067357
申请日：2006-12-01
申请人： Koji Saikusa , Yasunori Kawamura
发明人： Koji Saikusa , Yasunori Kawamura
IPC分类号： H02M3/18 , G05F3/02
CPC分类号： H02M3/07 , G09G3/3696 , H02J7/0044 , H02M2001/009 , H02M2003/072
摘要： A charge pump circuit generates a desired output voltage by stepping up an input voltage. An LCD driver IC and an electronic appliance are provided with the charge pump circuit.
摘要翻译：电荷泵电路通过增加输入电压来产生期望的输出电压。 LCD驱动器IC和电子设备配备有电荷泵电路。

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