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    • 4. 发明申请
    • FIELD-EFFECT TRANSISTOR
    • 场效应晶体管
    • US20090095954A1
    • 2009-04-16
    • US12199446
    • 2008-08-27
    • Tomoaki OnoueTakeshi YasudaTetsuo Tsutsui
    • Tomoaki OnoueTakeshi YasudaTetsuo Tsutsui
    • H01L51/10H01L51/40
    • H01L51/0533H01L21/31691H01L51/0537
    • A field-effect transistor is provided, which includes an organic thin film and which can realize a low threshold voltage while a stable, high field-effect mobility is ensured at the same time. In a field-effect transistor provided with a gate electrode, a source electrode, a drain electrode, a semiconductor film, a gate insulating film, and a substrate, the gate insulating film is formed from a plurality of insulating layers. Here, a first insulating layer in contact with the semiconductor film is formed from poly-p-xylylene formed into a film by a CVD method. A second insulating layer is formed from, for example, cyanoethylpullulan, and the dielectric constant is specified to be higher than that of the first insulating layer.
    • 提供场效应晶体管,其包括有机薄膜,并且可以在同时确保稳定的高场效应迁移率的同时实现低阈值电压。 在设置有栅电极,源极,漏极,半导体膜,栅极绝缘膜和基板的场效应晶体管中,栅极绝缘膜由多个绝缘层形成。 这里,与半导体膜接触的第一绝缘层由通过CVD法形成为膜的聚对二甲苯形成。 第二绝缘层由例如氰乙基普兰兰形成,并且介电常数规定为高于第一绝缘层的介电常数。
    • 8. 发明申请
    • BATTERY
    • 电池
    • US20140212754A1
    • 2014-07-31
    • US14343029
    • 2012-09-07
    • Hidehisa MokudaiToru SukigaraMasaharu SatoTomoaki Onoue
    • Hidehisa MokudaiToru SukigaraMasaharu SatoTomoaki Onoue
    • H01M4/60H01M10/0525
    • H01M4/60H01M10/0525H01M10/0569H01M2300/0045
    • Provided is a battery having a high charging/discharging capacity density as compared with a conventional one. The battery (1) is characterized by comprising a positive electrode (2), a negative electrode (3), and an electrolytic solution interposed between the positive electrode (2) and the negative electrode (3) and formed by dissolving an electrolytic solution in a solvent, wherein the positive electrode (2) includes rubeanic acid or a rubeanic acid derivative as an active material and the solvent includes an ionic liquid. In the battery (1), it is possible to neutralize, by anions present in the ions, positive charges generated when rubeanic acid or the rubeanic acid derivative is oxidized. Therefore, rubeanic acid or the rubeanic acid derivative can take three states from an oxidant to a reductant, so that a high charging/discharging capacity density can be obtained in comparison with a conventional one.
    • 提供与常规电池相比具有高充电/放电容量密度的电池。 电池(1)的特征在于,包括正极(2),负极(3)以及介于正极(2)和负极(3)之间的电解液,通过将电解液溶解在 溶剂,其中所述正极(2)包括作为活性物质的氢硼酸或者硼酸酸衍生物,所述溶剂包括离子液体。 在电池(1)中,可以通过存在于离子中的阴离子来中和无规硼酸或者硼酸衍生物被氧化时产生的正电荷。 因此,与常规方法相比,可以从氧化剂到还原剂三种状态,可以得到高的充放电容量密度。
    • 9. 发明授权
    • Field-effect transistor
    • 场效应晶体管
    • US07932177B2
    • 2011-04-26
    • US12199446
    • 2008-08-27
    • Tomoaki OnoueTakeshi YasudaTetsuo Tsutsui
    • Tomoaki OnoueTakeshi YasudaTetsuo Tsutsui
    • H01L21/4763
    • H01L51/0533H01L21/31691H01L51/0537
    • A field-effect transistor is provided, which includes an organic thin film and which can realize a low threshold voltage while a stable, high field-effect mobility is ensured at the same time. In a field-effect transistor provided with a gate electrode, a source electrode, a drain electrode, a semiconductor film, a gate insulating film, and a substrate, the gate insulating film is formed from a plurality of insulating layers. Here, a first insulating layer in contact with the semiconductor film is formed from poly-p-xylylene formed into a film by a CVD method. A second insulating layer is formed from, for example, cyanoethylpullulan, and the dielectric constant is specified to be higher than that of the first insulating layer.
    • 提供场效应晶体管,其包括有机薄膜,并且可以在同时确保稳定的高场效应迁移率的同时实现低阈值电压。 在设置有栅电极,源极,漏极,半导体膜,栅极绝缘膜和基板的场效应晶体管中,栅极绝缘膜由多个绝缘层形成。 这里,与半导体膜接触的第一绝缘层由通过CVD法形成为膜的聚对二甲苯形成。 第二绝缘层由例如氰乙基普兰兰形成,并且介电常数规定为高于第一绝缘层的介电常数。