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1. 发明专利

JP2014035413A Resist composition, method for forming resist pattern, production method of compound, and polymeric compound 有权
标题翻译：耐蚀组合物，形成耐蚀图案的方法，化合物的生产方法和聚合物
公开(公告)号：JP2014035413A
公开(公告)日：2014-02-24
申请号：JP2012175993
申请日：2012-08-08
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： IRIE MAKIKO , NAKAMURA TAKESHI
IPC分类号： G03F7/039 , C08F22/10 , G03F7/038 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a resist composition excellent in various lithographic characteristics such as LWR (line width roughness) and sensitivity, a method for forming a resist pattern, a method for producing a compound, and a polymeric compound.SOLUTION: The resist composition generates an acid by exposure and shows changes in the solubility with a developing solution by an action of the acid; and the composition comprises a base component (A) showing changes in the solubility with a developing solution by an action of an acid. The base component (A) contains a polymeric compound (A1) having a structural unit (a0) expressed by general formula (a0-1). In the formula, Rarepresents a lactone-containing cyclic group except for a 2-oxatricyclo[4.2.1.0]nonan-3-on ring, a carbonate-containing cyclic group or -SO- containing cyclic group.
摘要翻译：要解决的问题：提供各种光刻特性如LWR（线宽粗糙度）和灵敏度优异的抗蚀剂组合物，形成抗蚀剂图案的方法，化合物和聚合物的制备方法。溶液：抗蚀剂组合物通过暴露产生酸，并通过酸的作用显示与显影溶液的溶解度的变化; 并且所述组合物包含通过酸的作用显示与显影液的溶解度的变化的碱成分（A）。碱成分（A）含有具有由通式（a0-1）表示的结构单元（a0）的高分子化合物（A1）。在该式中，除了2-氧杂三环[4.2.1.0]壬-3-烯环，含碳酸酯的环状基团或含-SO-的环状基团外，还表示含内酯的环状基团。

2. 发明专利

JP2012220824A Resist composition, method for forming resist pattern, and polymer compound 有权
标题翻译：耐蚀组合物，形成耐火图案的方法和聚合物化合物
公开(公告)号：JP2012220824A
公开(公告)日：2012-11-12
申请号：JP2011088169
申请日：2011-04-12
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： IRIE MAKIKO , HIRANO TOMOYUKI , TAKAGI DAICHI
IPC分类号： G03F7/039 , C08F20/10 , H01L21/027
CPC分类号： G03F7/0397 , C08F224/00 , C08F228/06 , G03F7/2041
摘要： PROBLEM TO BE SOLVED: To provide a resist composition excellent in lithographic characteristics and a pattern shape, to provide a method for forming a resist pattern using the resist composition, and to provide a polymer compound useful for the resist composition.SOLUTION: A base component (A) whose solubility in a developing solution changes by an action of an acid includes a resin component (A1) comprising a constitutional unit represented by formula (a0-1), a constitutional unit derived from an acrylate and a constitutional unit having an acid-decomposable group.
摘要翻译：要解决的问题：为了提供光刻特性和图案形状优异的抗蚀剂组合物，提供使用该抗蚀剂组合物形成抗蚀剂图案的方法，并提供可用于抗蚀剂组合物的高分子化合物。解决方案：其在显影液中的溶解度在酸的作用下变化的基础组分（A）包括包含由式（a0-1）表示的结构单元的树脂组分（A1），衍生自丙烯酸酯和具有酸分解基团的结构单元。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2010026478A Positive resist composition and method of forming resist pattern 有权
标题翻译：正电阻组合物和形成电阻图案的方法
公开(公告)号：JP2010026478A
公开(公告)日：2010-02-04
申请号：JP2008247802
申请日：2008-09-26
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： MIMURA TAKEYOSHI , IRIE MAKIKO
IPC分类号： G03F7/039 , G03F7/004 , H01L21/027
CPC分类号： G03F7/0397 , G03F7/0045
摘要： PROBLEM TO BE SOLVED: To provide a novel positive resist composition that includes a low molecular material as a base material component, and to provide a method of forming a resist pattern using the positive resist composition. SOLUTION: The positive resist composition includes: a base material component (A) that exhibits increased solubility in an alkali developing solution under the action of acid; and an acid generator component (B) that generates acid upon exposure, wherein the base material component (A) comprises a compound (A1) in which either a portion of, or all of, the hydrogen atoms of hydroxyl groups (-OH) within a phenolic compound (I) described below have been substituted with a group containing an acid dissociable, dissolution inhibiting group: the phenolic compound (I) including 4 triphenylmethane structures, and a tetravalent linking moiety that links the 4 triphenylmethane structures, wherein at least one of the 4 triphenylmethane structures has at least one phenolic hydroxyl group. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种新颖的正型抗蚀剂组合物，其包括作为基材成分的低分子材料，并提供使用正性抗蚀剂组合物形成抗蚀剂图案的方法。解决方案：正型抗蚀剂组合物包括：在酸性作用下在碱性显影液中显示出增加的溶解度的基材成分（A）以及在暴露时产生酸的酸产生剂组分（B），其中所述基材组分（A）包含化合物（A1），其中羟基（-OH）的氢原子的一部分或全部部分或全部在下面描述的酚类化合物（I）已被含有酸解离的溶解抑制基团的基团取代：包含4个三苯基甲烷结构的酚类化合物（I）和连接4个三苯基甲烷结构的四价连接部分，其中至少一个的四苯基甲烷结构具有至少一个酚羟基。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2009265250A Positive resist composition, and resist pattern forming method 有权
标题翻译：积极抵抗组合和阻力图形成方法
公开(公告)号：JP2009265250A
公开(公告)日：2009-11-12
申请号：JP2008112671
申请日：2008-04-23
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： IRIE MAKIKO , IWAI TAKESHI
IPC分类号： G03F7/039 , C08F220/30 , G03F7/004 , H01L21/027
CPC分类号： G03F7/0397
摘要： PROBLEM TO BE SOLVED: To provide a positive resist composition capable of reducing variation of a resist pattern dimension when an exposure amount varies, and to provide a resist pattern forming method. SOLUTION: The positive resist composition contains a resin component (A) in which a solubility in an alkali developer liquid is increased by an action of an acid, and an acid-generating component (B) in which an acid is generated by light exposure. The resin component (A) contains a constitutive unit (a0) represented by General Formula (a0), and a constitutive unit (a1) derived from an acrylate ester containing an acid dissociable dissolution inhibiting group (excepting a group exhibiting aromaticity), wherein in the General Formula (a0), R represents a hydrogen atom, a 1C-5C lower alkyl group or a halogenated 1C-5C lower alkyl group, Q represents a divalent bonding group containing a nitrogen atom or an oxygen atom, R 6 represents a 1C-5C lower alkyl group or a 1C-5C alkoxy group, p represents an integer of 1 to 3, and q represents an integer of 0 to 2. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种当曝光量变化时能够减小抗蚀剂图案尺寸的变化的正性抗蚀剂组合物，并提供抗蚀剂图案形成方法。解决方案：正型抗蚀剂组合物包含其中通过酸的作用使碱显影剂液体的溶解度增加的树脂组分（A）和产生酸的产酸组分（B），其中产生酸的酸产生组分曝光树脂组分（A）含有由通式（a0）表示的组成单元（a0）和由含有酸解离溶解抑制基团（除了具有芳香性的基团）的丙烯酸酯衍生的组成单元（a1），其中通式（a0）中，R表示氢原子，1C-5C低级烷基或卤代的1C-5C低级烷基，Q表示含有氮原子或氧原子的二价键合基团，R 6 表示1C-5C低级烷基或1C-5C烷氧基，p表示1〜3的整数，q表示0〜2的整数。（C）2010，JPO＆INPIT

5. 发明专利

JP2008001767A Compound, polymer compound, positive resist composition, and resist pattern formation method 有权
标题翻译：化合物，聚合物化合物，阳性电阻组合物和电阻图案形成方法
公开(公告)号：JP2008001767A
公开(公告)日：2008-01-10
申请号：JP2006171174
申请日：2006-06-21
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： OGATA TOSHIYUKI , FURUYA SANAE , KINOSHITA YOHEI , IRIE MAKIKO
IPC分类号： C08F20/28 , C07C69/54 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a novel compound, a polymer compound, a positive resist composition containing the polymer compound, and a resist pattern formation method using the positive resist composition.
SOLUTION: The compound is represented by formula (I). The polymer compound comprises structural units (a1) represented by formula (II). In formulae (I) and (II), R
1 is a hydrogen atom or a methyl group; R
2 and R
3 are each independently a hydrogen atom or a 1-5C alkyl group; n is an integer of 0-3; and Z is a 4-12C alicyclic group having a fluorine atom and/or a fluoroalkyl group as substituents.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供新型化合物，高分子化合物，含有高分子化合物的正性抗蚀剂组合物和使用正性抗蚀剂组合物的抗蚀剂图案形成方法。化合物由式（I）表示。高分子化合物包括由式（II）表示的结构单元（a1）。在式（I）和（II）中，R 1是氢原子或甲基; R 2 和R 3 各自独立地为氢原子或1-5C烷基; n为0-3的整数; Z为具有氟原子和/或氟烷基的4-12C脂环基作为取代基。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2007219292A Pattern forming method and method for producing semiconductor device 有权
标题翻译：图案形成方法和制造半导体器件的方法
公开(公告)号：JP2007219292A
公开(公告)日：2007-08-30
申请号：JP2006041209
申请日：2006-02-17
申请人： Sony Corp , Tokyo Ohka Kogyo Co Ltd , ソニー株式会社 , 東京応化工業株式会社
发明人： MATSUZAWA NOBUYUKI , ANDO ATSUHIRO , MATSUI ERIKO , YAMAGUCHI YUKO , KUGIMIYA KATSUNAO , TATSUMI TETSUYA , SALAM KAZI , IWAI TAKESHI , IRIE MAKIKO
IPC分类号： G03F7/40 , G03F7/039 , G03F7/11 , H01L21/027
CPC分类号： H01L21/0273 , G03F7/40 , H01L21/28123 , H01L21/32139
摘要： PROBLEM TO BE SOLVED: To provide a pattern forming method and a method for producing a semiconductor device by which variation in line width of a pattern of a layer to be etched is reduced.
SOLUTION: The pattern forming method and the method for producing a semiconductor device include: a first step of forming a resist pattern 15' containing a polymeric material having a lactone group-containing skeleton on a gate electrode film 12 disposed on a substrate 11; a second step of plasma-treating the resist pattern 15' with a hydrogen-containing gas so as to lower the glass transition temperature or softening point of the resist pattern 15'; and a third step of forming a gate electrode by transferring the plasma-treated resist pattern 15' to the gate electrode film 12 by etching.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种图案形成方法和用于制造半导体器件的方法，通过该半导体器件，待蚀刻层的图案的线宽的变化减小。解决方案：图案形成方法和半导体器件的制造方法包括：第一步骤，在设置在基板上的栅电极膜12上形成含有含内酯基骨架的聚合材料的抗蚀剂图案15' 11; 用含氢气体等离子体处理抗蚀剂图案15'以降低抗蚀剂图案15'的玻璃化转变温度或软化点的第二步骤; 以及通过蚀刻将等离子体处理的抗蚀剂图案15'转移到栅电极膜12来形成栅电极的第三步骤。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2012230174A Resist composition and method for forming resist pattern 审中-公开
标题翻译：用于形成电阻图案的耐蚀组合物和方法
公开(公告)号：JP2012230174A
公开(公告)日：2012-11-22
申请号：JP2011097151
申请日：2011-04-25
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： SHIONO HIROHISA , IRIE MAKIKO , TSUCHIYA JUNICHI , TAKAGI DAICHI
IPC分类号： G03F7/039 , C08F220/26 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a resist composition from which a resist pattern excellent in lithographic characteristics and a resist pattern profile and having high sensitivity can be formed, and to provide a method for forming a resist pattern by using the resist composition.SOLUTION: The resist composition contains: a base component (A) whose solubility with a developing solution changes by an action of an acid; and an acid generator component (B) generating an acid by exposure. The base component (A) contains a resin component (A1) having a structural unit (a1) derived from an acrylate in which a hydrogen atom bonded to a carbon atom at an α-position may be substituted with a substituent, the structural unit containing an acid-decomposable group that shows increase in the polarity by the action of the acid, and a (meth)acrylate unit (a5) having a hydroxyadmantyl group, with an activation energy of 100 kJ/mol or less for decomposing the acid-decomposable group.
摘要翻译：要解决的问题：提供可以形成具有优异的光刻特性和抗蚀剂图案轮廓并具有高灵敏度的抗蚀剂图案的抗蚀剂组合物，并且提供通过使用抗蚀剂组合物形成抗蚀剂图案的方法。抗蚀剂组合物含有：与显影液的溶解度随酸的作用而变化的碱成分（A）和通过曝光产生酸的酸产生剂组分（B）。基础成分（A）含有具有来自与α-位上的碳原子键合的氢原子可以被取代基取代的丙烯酸酯的结构单元（a1）的树脂成分（A1），所述结构单元含有具有羟基金刚烷基的（甲基）丙烯酸酯单元（a5），活性能为100kJ / mol以下的酸分解性基团，其酸性分解性显示极性升高，分解酸分解性组。版权所有（C）2013，JPO＆INPIT

8. 发明专利

JP2010271402A Positive-type resist composition, resist pattern-forming method, and high-molecular compound 有权
标题翻译：正极型抗蚀剂组合物，抗蚀剂图案形成方法和高分子化合物
公开(公告)号：JP2010271402A
公开(公告)日：2010-12-02
申请号：JP2009121101
申请日：2009-05-19
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： UTSUMI YOSHIYUKI , MATSUZAWA KENSUKE , HANEDA HIDEO , IRIE MAKIKO
IPC分类号： G03F7/039 , C08F220/30 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a positive-type resist composition which has superior lithographic characteristics and forms a roughness-reduced resist pattern, a resist pattern-forming method using the positive-type resist composition, and a high-molecular compound which can be utilized as a base material component for the positive-type resist composition. SOLUTION: The positive-type resist composition contains a base material component (A), which increases its solubility to an alkaline developing agent by the action of an acid, and an acid-generating agent component (B) which generates an acid when it is exposed to light, and the base material component (A) contains a high-molecular compound (A1), having a constituent unit which contains units of a methylol-substituted naphthol ester of (meth)acrylic acid. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有优异的光刻特性并形成粗糙度降低的抗蚀剂图案的正型抗蚀剂组合物，使用正型抗蚀剂组合物的抗蚀剂图案形成方法和高分子化合物其可以用作正型抗蚀剂组合物的基材成分。解决方案：正型抗蚀剂组合物含有基材成分（A），其通过酸的作用增加其对碱性显影剂的溶解度，以及产生酸的酸产生剂组分（B）曝光时，基材成分（A）含有含有（甲基）丙烯酸的羟甲基取代萘酚酯单元的构成单元的高分子化合物（A1）。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2010250064A Positive resist composition and method for forming resist pattern 有权
标题翻译：积极抗性组合物和形成耐药模式的方法
公开(公告)号：JP2010250064A
公开(公告)日：2010-11-04
申请号：JP2009099218
申请日：2009-04-15
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： UTSUMI YOSHIYUKI , IRIE MAKIKO
IPC分类号： G03F7/039 , G03F7/004 , H01L21/027
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/2041
摘要： PROBLEM TO BE SOLVED: To provide a positive resist composition exhibiting excellent resolution with which a resist pattern having a good shape is formed, and to provide a method for forming a resist pattern. SOLUTION: The positive resist composition includes a base component (A) which exhibits increased solubility in an alkali developing solution under an action of an acid, and an acid generator component (B) which generates an acid upon exposure. The base component (A) includes a polymeric compound (A1) having an acrylate structural unit (a0) having a side chain and expressed by general formula -R 2 -C(=O)-O-R 1 (wherein R 1 represents an acid dissociable dissolution inhibiting group and R 2 represents a divalent hydrocarbon group). The acid generator component (B) includes an acid generator (B1) having an anionic moiety expressed by general formula (I) (wherein X represents a 3-30C hydrocarbon group, Q 1 represents a divalent linking group containing an oxygen atom, and Y 1 represents a 1-4C alkylene group or 1-4C fluorinated alkylene group). COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有优异分辨率的正性抗蚀剂组合物，通过该抗蚀剂组合物形成具有良好形状的抗蚀剂图案，并提供形成抗蚀剂图案的方法。解决方案：正型抗蚀剂组合物包括在酸性作用下在碱性显影液中显示增加的溶解度的基础组分（A）和暴露时产生酸的酸产生剂组分（B）。基础组分（A）包括具有丙烯酸酯结构单元（a0）的聚合化合物（A1），其具有侧链并由通式-R SP 2表示-C（= O）-OR 1 （其中R 1 表示酸解离溶解抑制基团，R 2表示二价烃基）。酸产生剂组分（B）包括具有由通式（I）表示的阴离子部分的酸发生剂（B1）（其中X表示3-30C烃基，Q 1表示二价连接基团含有氧原子，Y 1表示1-4C亚烷基或1-4C氟化亚烷基）。版权所有（C）2011，JPO＆INPIT

10. 发明专利

JP2009229603A Positive resist material and resist pattern forming method 有权
标题翻译：积极的材料和电阻形成方法
公开(公告)号：JP2009229603A
公开(公告)日：2009-10-08
申请号：JP2008072502
申请日：2008-03-19
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： IRIE MAKIKO , UTSUMI YOSHIYUKI
IPC分类号： G03F7/039 , G03F7/004 , G03F7/031 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a new positive resist material using a low molecular material as a base component, and a resist pattern forming method using the positive resist material. SOLUTION: The positive resist material contains a base component (B) comprising a compound (B1) represented by a general formula (b1) as a principal component, wherein X is a 3-30C hydrocarbon group which may have a substituent; Q 1 is a divalent linking group containing an oxygen atom; Y 1 is a 1-4C alkylene group which may have a substituent or a 1-4C fluorinated alkylene group which may have a substituent; and A + is an organic cation having an acid-dissociable dissolution inhibiting group. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：使用低分子材料作为基础组分提供新的正性抗蚀剂材料，以及使用正性抗蚀剂材料的抗蚀剂图案形成方法。正型抗蚀剂材料含有由以通式（b1）表示的化合物（B1）作为主要成分的碱成分（B），其中X为可具有取代基的3-30C烃基; Q 1 是含有氧原子的二价连接基团; Y 1 是可以具有取代基的1-4C亚烷基或可以具有取代基的1-4C氟化亚烷基; 并且A + 是具有酸解离溶解抑制基团的有机阳离子。版权所有（C）2010，JPO＆INPIT

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