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1. 发明专利

JP2012019025A Liquid processing unit 审中-公开
标题翻译：液体加工单元
公开(公告)号：JP2012019025A
公开(公告)日：2012-01-26
申请号：JP2010154883
申请日：2010-07-07
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： MIYATA YUICHIRO , OKADA SOICHIRO , INADA HIROKAZU , KINOSHITA NAOFUMI
IPC分类号： H01L21/027 , B05C11/08 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To prevent mist from being reattached and improve uniformity in film thickness by controlling air current in a processing cup.SOLUTION: A processing cup (33A) comprises: a first cup member (40A); a second cup member (60); and a third cup member (70) provided between the first cup member (40A) and the second cup member (60). The first cup member (40A) has an annular inner side tilted face (43), nearly horizontal annular top face (43b), and an annular outer side tilted face (41). The third cup member (70) has an inner side end edge (70e) provided at a position higher and outer than a periphery (We) of a substrate held by a spin chuck (31). The top face (43b) is provided so as to include the periphery (We) of the substrate and the inner side end edge (70e) of the third cup member in a planer view.
摘要翻译：要解决的问题：通过控制处理杯中的气流来防止重新附着的雾和提高膜厚度的均匀性。处理杯（33A）包括：第一杯构件（40A）; 第二杯构件（60）; 以及设置在第一杯构件（40A）和第二杯构件（60）之间的第三杯构件（70）。第一杯构件（40A）具有环形内侧倾斜面（43），近似水平的环形顶面（43b）和环形外侧倾斜面（41）。第三杯构件（70）具有设置在由旋转卡盘（31）保持的基板的外周（We）的外侧的位置处的内侧端缘（70e）。上表面（43b）设置成在平面图中包括基板的周边（We）和第三杯构件的内侧端边缘（70e）。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2013153063A Liquid processing apparatus 有权
标题翻译：液体加工设备
公开(公告)号：JP2013153063A
公开(公告)日：2013-08-08
申请号：JP2012013136
申请日：2012-01-25
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： YOSHIHARA KOSUKE , YOSHIDA YUICHI , OKADA SOICHIRO
IPC分类号： H01L21/027 , B05C11/08 , H01L21/304
CPC分类号： H01L21/67 , G03F7/162 , H01L21/02107 , H01L21/67017 , H01L21/6715
摘要： PROBLEM TO BE SOLVED: To suppress an amount of a foreign object brought onto a substrate from a process liquid when the substrate is processed with the process liquid.SOLUTION: In order to easily spread a resist liquid on a wafer W on a spin chuck 20, a solvent of PGMEA, etc. is applied onto the wafer W in advance. Before the application, the solvent supplied from a solvent supply source 42 is stored in a distillation tank 51 temporarily and the solvent is heated in a heating part 53 to be vaporized. The vaporized solvent is cooled in a cooler 60 thereby conducting purification through distillation and removing particles in the solvent. The purified solvent is stored in a storage tank 71 temporarily and is supplied from a solvent supply path 74 to a solvent nozzle 40 above the spin chuck 20. Then, the solvent is discharged from the solvent nozzle 40 to the wafer W and is applied onto the wafer W. Further, the distillation tank 51 is periodically cleaned thereby suppressing the rise of the particle concentration of the solvent.
摘要翻译：要解决的问题：当用工艺液体处理基板时，抑制从处理液体引入到基板上的异物量。解决方案：为了将抗蚀剂液体容易地在旋转卡盘20上的晶片W上展开，预先将PGMEA等的溶剂施加到晶片W上。在施用之前，将从溶剂供应源42供应的溶剂临时储存在蒸馏箱51中，并将溶剂在加热部分53中加热以蒸发。蒸发的溶剂在冷却器60中冷却，从而通过蒸馏进行纯化并除去溶剂中的颗粒。将纯化的溶剂临时储存在储存罐71中，并从溶剂供给路径74供给到旋转卡盘20的上方的溶剂喷嘴40.然后，将溶剂从溶剂喷嘴40排出到晶片W，并涂布在晶片W.此外，周期性地清洗蒸馏罐51，从而抑制溶剂的颗粒浓度的上升。

3. 发明专利

JP2014168001A Substrate processing method, program and computer storage medium 有权
标题翻译：基板处理方法，程序和计算机存储介质
公开(公告)号：JP2014168001A
公开(公告)日：2014-09-11
申请号：JP2013039666
申请日：2013-02-28
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： MURAMATSU MAKOTO , KITANO TAKAHIRO , TOMITA TADATOSHI , TAUCHI HIROSHI , OKADA SOICHIRO
IPC分类号： H01L21/027
CPC分类号： H01L21/0337 , B82Y40/00 , G03F7/0002
摘要： PROBLEM TO BE SOLVED: To adjust the size of a pattern formed of a hydrophilic polymer and a hydrophobic polymer, in substrate processing using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer.SOLUTION: In a substrate processing method, a resist pattern is formed on a wafer (step S3), and a block copolymer is coated on a substrate on which the resist pattern has been formed (step S4). Then, the substrate on which the block copolymer has been coated is subjected to heat treatment to phase separate the block copolymer into a hydrophilic polymer and a hydrophobic polymer. In the heat treatment for the phase separation of a polymer, the concentration of a solvent of a block copolymer contained in the block copolymer coated on a wafer is adjusted to a predetermined concentration.
摘要翻译：要解决的问题：调节由亲水性聚合物和疏水性聚合物形成的图案的尺寸，在使用含有亲水性聚合物和疏水性聚合物的嵌段共聚物进行基板处理时。形成在晶片上（步骤S3），并且在已经形成抗蚀剂图案的基板上涂布嵌段共聚物（步骤S4）。然后，将其上已经涂覆有嵌段共聚物的基材进行热处理，以将嵌段共聚物相分离成亲水性聚合物和疏水性聚合物。在用于相分离聚合物的热处理中，将包含在涂覆在晶片上的嵌段共聚物中的嵌段共聚物的溶剂浓度调节至预定浓度。

4. 发明专利

JP2014146740A Substrate treatment method, program and computer storage medium 有权
标题翻译：基板处理方法，程序和计算机存储介质
公开(公告)号：JP2014146740A
公开(公告)日：2014-08-14
申请号：JP2013015301
申请日：2013-01-30
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： MURAMATSU MAKOTO , KITANO TAKAHIRO , TOMITA TADATOSHI , TAUCHI HIROSHI , OKADA SOICHIRO
IPC分类号： H01L21/027
CPC分类号： H01L21/0337
摘要： PROBLEM TO BE SOLVED: To arrange a hydrophilic polymer and a hydrophobic polymer into a desired pattern by appropriately forming a guide on a substrate in a substrate treatment method using a block copolymer containing the hydrophilic polymer and the hydrophobic polymer.SOLUTION: An antireflection film 402 is formed on a first resist film 401 that is soluble with an alkali solution and deprotected, both films being formed on an upper surface of a neutral layer 400 on a wafer W; and a resist pattern is formed in a second resist film 403 formed on the antireflection film 402. Then a predetermined pattern is formed in the neutral layer 400 by using the resist pattern of the second resist film 403 as a mask. Then the first resist film 401 is removed by use of an alkali solution. A black copolymer is applied on the wafer W after the first resist film 401 is removed; and the black copolymer is separated into phases of the hydrophilic polymer and the hydrophobic polymer.
摘要翻译：要解决的问题：通过使用含有亲水性聚合物和疏水性聚合物的嵌段共聚物的基板处理方法，通过在基板上适当地形成引导体，将亲水性聚合物和疏水性聚合物配置成所需图案。溶胶：抗反射膜402 形成在可溶于碱溶液并脱保护的第一抗蚀剂膜401上，两个膜形成在晶片W上的中性层400的上表面上; 并且在形成在防反射膜402上的第二抗蚀剂膜403中形成抗蚀剂图案。然后通过使用第二抗蚀剂膜403的抗蚀剂图案作为掩模在中性层400中形成预定图案。然后通过使用碱溶液除去第一抗蚀膜401。在去除第一抗蚀剂膜401之后，在晶片W上施加黑色共聚物; 并将黑色共聚物分离成亲水性聚合物和疏水性聚合物的相。

5. 发明专利

JP2014187103A Substrate processing apparatus, substrate processing method, program and computer storage medium 有权
标题翻译：基板处理装置，基板处理方法，程序和计算机存储介质
公开(公告)号：JP2014187103A
公开(公告)日：2014-10-02
申请号：JP2013059698
申请日：2013-03-22
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： MURAMATSU MAKOTO , KITANO TAKAHIRO , TOMITA TADATOSHI , TAUCHI HIROSHI , OKADA SOICHIRO
IPC分类号： H01L21/027 , B05C11/08 , B05D1/36 , B05D3/10 , B05D5/00 , B05D7/24 , G03F7/40
CPC分类号： H01L21/0271 , B81C1/00031 , B81C2201/0149
摘要： PROBLEM TO BE SOLVED: To appropriately form a predetermined pattern on a substrate in a substrate processing using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer.SOLUTION: A block copolymer 404 is applied over the upper surface of a first neutral layer 400 on a wafer W, and a neutral agent is applied over the upper surface of the block copolymer 404, thereby forming a second neutral layer 405. By subjecting the wafer W, which has been provided with the second neutral layer 405 on the block copolymer 404, to a heat treatment, the block copolymer 404 is phase separated into a hydrophilic polymer 406 and a hydrophobic polymer 407. The neutral agent does not dissolve the block copolymer 404, and prevents oxygen from reaching the block copolymer 404 during the heat treatment.
摘要翻译：要解决的问题：在使用含有亲水性聚合物和疏水性聚合物的嵌段共聚物的基板处理中，在基板上适当地形成规定的图案。溶液：在第一中性层400的上表面上涂布嵌段共聚物404，将晶片W和中性剂施加在嵌段共聚物404的上表面上，从而形成第二中性层405.通过使设置有第二中性层405的晶片W嵌段在嵌段共聚物404上，为了进行热处理，嵌段共聚物404被相分离成亲水性聚合物406和疏水性聚合物407.中和剂不溶解嵌段共聚物404，并且在热处理期间防止氧到达嵌段共聚物404。

6. 发明专利

JP2014157929A Substrate treatment method, program, computer storage medium, and substrate treatment system 有权
标题翻译：基板处理方法，程序，计算机存储介质和基板处理系统
公开(公告)号：JP2014157929A
公开(公告)日：2014-08-28
申请号：JP2013028013
申请日：2013-02-15
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： MURAMATSU MAKOTO , KITANO TAKAHIRO , TOMITA TADATOSHI , TAUCHI HIROSHI , OKADA SOICHIRO
IPC分类号： H01L21/027 , B82Y40/00
CPC分类号： H01L21/6715 , B82Y40/00 , H01L21/0337
摘要： PROBLEM TO BE SOLVED: To adjust dimensions of a pattern formed with hydrophilic polymer and hydrophobic polymer in substrate treatment using a block copolymer containing the hydrophilic polymer and the hydrophobic polymer.SOLUTION: A resist pattern is formed on a wafer (Step S3), and a block copolymer is applied to a substrate after the resist pattern is formed (Step S4). Subsequently, the substrate to which the block copolymer is applied is heat-treated, and the block copolymer is phase-separated into a hydrophilic polymer and a hydrophobic polymer. In the heat-treatment in which polymer is separated, a concentration of solvent contained in the block copolymer which is applied on the wafer is adjusted to a predetermined concentration.
摘要翻译：要解决的问题：使用含有亲水性聚合物和疏水性聚合物的嵌段共聚物在底物处理中调整由亲水性聚合物和疏水性聚合物形成的图案的尺寸。解决方案：在晶片上形成抗蚀剂图案（步骤S3），和在形成抗蚀剂图案之后，将嵌段共聚物施加到基板（步骤S4）。随后，对嵌段共聚物施加的基材进行热处理，将嵌段共聚物相分离成亲水性聚合物和疏水性聚合物。在分离聚合物的热处理中，将施加在晶片上的嵌段共聚物中所含的溶剂浓度调节至预定浓度。

7. 发明专利

JP2014082439A Substrate processing method, program, computer storage medium, and substrate processing system 有权
标题翻译：基板处理方法，程序，计算机存储介质和基板处理系统
公开(公告)号：JP2014082439A
公开(公告)日：2014-05-08
申请号：JP2013046512
申请日：2013-03-08
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： MURAMATSU MAKOTO , KITANO TAKAHIRO , TOMITA TADATOSHI , TAUCHI HIROSHI , OKADA SOICHIRO
IPC分类号： H01L21/027 , B82Y40/00
CPC分类号： H01L21/0274 , G03F7/0002 , G03F7/16 , G03F7/405 , H01J37/32889 , H01L21/0271 , H01L21/0273 , H01L21/31133 , H01L21/31138 , H01L21/6715 , H01L21/67253
摘要： PROBLEM TO BE SOLVED: To appropriately form a prescribed pattern on a substrate in substrate processing which uses a block copolymer containing a hydrophilic polymer and a hydrophobic polymer.SOLUTION: A method for processing a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer comprises the steps of: forming a neutral layer having intermediate affinity to the hydrophilic polymer and the hydrophobic polymer on the substrate (step S2); forming a resist pattern by performing exposure processing for a resist film formed on the substrate and developing the resist film after exposure processing (step S3); processing a surface of the resist pattern by supplying an organic solvent having a polarity to the resist pattern (step S5); and applying the block copolymer onto the neutral layer and phase-separating the block copolymer on the neutral layer into the hydrophilic polymer and the hydrophobic polymer (step S7).
摘要翻译：要解决的问题：在使用含有亲水性聚合物和疏水性聚合物的嵌段共聚物的基板处理中，在基板上适当地形成规定图案。溶液：使用含有亲水性聚合物和疏水性的嵌段共聚物来处理基材的方法聚合物包括以下步骤：形成对亲水性聚合物和基材上的疏水性聚合物具有中等亲和力的中性层（步骤S2）; 通过对形成在基板上的抗蚀剂膜进行曝光处理并在曝光处理之后显影抗蚀剂膜来形成抗蚀剂图案（步骤S3）; 通过向抗蚀剂图案提供具有极性的有机溶剂来处理抗蚀剂图案的表面（步骤S5）; 并将嵌段共聚物施加到中性层上并将中性层上的嵌段共聚物相分离成亲水性聚合物和疏水性聚合物（步骤S7）。

8. 发明专利

SG11201606375QA METHOD FOR PROCESSING ARTICLE 未知
公开(公告)号：SG11201606375QA
公开(公告)日：2016-09-29
申请号：SG11201606375Q
申请日：2015-01-16
申请人： TOKYO ELECTRON LTD
发明人： TOBANA TOSHIKATSU , YOU GEN , OKADA SOICHIRO
IPC分类号： H01L21/3065 , H01L21/027 , H01L21/683
摘要： This method for processing a target object includes steps ST1 to ST4. The target object has an organic polymer layer and a resist mask on a substrate. In step ST1, the target object is electrostatically attached to an electrostatic chuck in a plasma processing apparatus. In step ST2, the organic polymer layer is etched through the resist mask by means of a plasma of a first gas. In step ST3, the target object is detached from the electrostatic chuck while a plasma of a second gas is generated. In step 4, the resist mask is peeled off. The second gas is either oxygen gas or a mixture of oxygen gas and a rare gas having an atomic weight lower than that of argon gas.

9. 发明专利

JP2019003982A 現像処理装置、現像処理方法及び記憶媒体审中-公开
公开(公告)号：JP2019003982A
公开(公告)日：2019-01-10
申请号：JP2017115338
申请日：2017-06-12
申请人： TOKYO ELECTRON LTD
发明人： OKADA SOICHIRO , SHIMOAOKI TAKESHI , HASHIMOTO YUSAKU
IPC分类号： H01L21/027 , B05C11/08 , B05C11/10 , G03F7/30
摘要：【課題】現像処理の進行の程度が基板上の位置によってばらつくことを抑制するのに有効な現像処理装置及び現像処理方法を提供する。【解決手段】現像処理装置は、第一現像液及び第一現像液よりも溶解性が高い第二現像液をウェハWの表面Waに供給するように構成された液供給部20と、第一現像液をウェハWの表面Waの中心Wc側から外周Wb側に順次供給するように液供給部20を制御することと、ウェハWの表面Waに第一現像液が供給された後に、第二現像液をウェハWの表面Waの外周Wb側から中心Wc側に順次供給するように液供給部20を制御することと、を実行するように構成された制御部100と、を備える。【選択図】図3

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