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1. 发明专利

JPS59102195A Low level bwr type reactor 失效
标题翻译：低水平BWR型反应器
公开(公告)号：JPS59102195A
公开(公告)日：1984-06-13
申请号：JP21143182
申请日：1982-12-03
申请人： Tokyo Electric Power Co , Tohoku Electric Power Co , Chubu Electric Power , Hokuriku Electric Power , Chugoku Electric Power , Nippon Genshiryoku Hatsuden , Hitachi Ltd
发明人： MIYAMARU KUNIO , TAKAHASHI TADATAKA , MIURA ICHITAROU , YAGI YOSHIAKI , WATANABE ISAMU , KAWANO TADAAKI , HONDA TAKU , KAWAKAMI TOSHIO , IZUMITANI MASAKIYO , MINATO AKIRA , OOSUMI KATSUMI
IPC分类号： F16L58/02 , G21D1/00
CPC分类号： F16L58/02

2. 发明专利

JPH0156719B2 失效
公开(公告)号：JPH0156719B2
公开(公告)日：1989-12-01
申请号：JP21143182
申请日：1982-12-03
申请人： TOKYO DENRYOKU KK , TOHOKU DENRYOKU KK , CHUBU DENRYOKU KK , HOKURIKU DENRYOKU KK , CHUGOKU DENRYOKU KK , NIPPON GENSHIRYOKU HATSUDEN KK , HITACHI SEISAKUSHO KK
发明人： MYAMARU KUNIO , TAKAHASHI TADATAKA , MIURA ICHITARO , YAGI YOSHIAKI , WATANABE ISAMU , KAWANO TADAAKI , PPONDA TAKU , KAWAKAMI TOSHIO , IZUMITANI MASAKYO , MINATO AKIRA , OOSUMI KATSUMI
IPC分类号： F16L58/02 , G21D1/00

3. 发明授权

US3902823A Impeller for gas-handling apparatus 失效
标题翻译：气体处理设备叶轮
公开(公告)号：US3902823A
公开(公告)日：1975-09-02
申请号：US48256374
申请日：1974-06-24
申请人： HITACHI LTD
发明人： MINATO AKIRA , SHIMIZU TSUTOMU , NISHIMATSU AKIRA
IPC分类号： C22C38/48 , F04D29/02 , F04D29/28
CPC分类号： F04D29/281 , C22C38/48 , F04D29/023 , F05D2260/95 , F05D2300/171
摘要： An impeller for, such as, gas compressors and blowers, fans, etc. comprising an impeller made of a martensite alloy steel consisting essentially of 0.06-0.15 % of carbon, 11-13.5 % of chromium, 1.5 to 3 % of nickel, 0.7 to 2 % of molybdenum, 0.03 to 0.6 % of niobium, up to 1 % of silicon, 0.2 to 2 % of manganese, up to 0.2 % of nitrogen and the balance of iron and incidental impurities has highly improved strength, toughness and corrosion resistance.
摘要翻译：一种用于例如气体压缩机和鼓风机，风扇等的叶轮，其包括由马氏体合金钢制成的叶轮，该马氏体合金钢基本上由碳的0.06-0.15％，11-13.5％的铬，1.5-3％的镍，0.7 至2％的钼，0.03至0.6％的铌，至多1％的硅，0.2至2％的锰，至多0.2％的氮，余量的铁和附带的杂质具有高度的改善的强度，韧性和耐腐蚀性。

4. 发明专利

DE3586295T2 未知
公开(公告)号：DE3586295T2
公开(公告)日：1993-02-25
申请号：DE3586295
申请日：1985-04-19
申请人： HITACHI LTD
发明人： HONDA TAKASHI , FURUTANI YASUMASA , OHASHI KENYA , KASHIMURA EIJI , MINATO AKIRA , OSUMI KATSUMI , ITO HISAO
IPC分类号： G21F9/00
摘要： A nuclear power plant (1-5, 6a, 6b, 8-10) wherein sufaces of components contacting with nuclear reactor cooling water containing radioactive substances are coated with an oxide film, preferably being charged positively and/or containing chromium in an amount of 12% by weight or more, is prevented effectively from the deposition of radioactive substances thereon.

5. 发明专利

DE3686600D1 未知
公开(公告)号：DE3686600D1
公开(公告)日：1992-10-08
申请号：DE3686600
申请日：1986-06-13
申请人： HITACHI LTD
发明人： KOBAYASHI SHIRO , ITOH MASAHIKO , MINATO AKIRA
IPC分类号： H01L23/02 , H01L21/56 , H01L23/28 , H01L23/29 , H01L23/31 , H01L23/49
摘要： A silver electrode (4) on a lead frame (2) is bonded to an aluminum electrode (5) on a silicon chip (1) with a copper wire (3). The resulting semiconductor device was immersed in a solution of benzotriazole in ethyl alcohol. An Ag-benzotriazole film (6) was formed on the surface of the silver electrode (4) and a Cu-benzotriazole film (7) was formed on the surface of the copper wire (3), while an Al-benzotriazole film (8) was formed on the surface of the aluminum electrode (5). Even if water penetrates into the semiconductor device, the silver electrode (4), the aluminum electrode (5) and the copper wire (3) are effectively protected by the anti-corrosive Ag-benzotriazole film (6), Cu-benzotriazole film (7) and Aℓ -benzotriazole film (8) to exhibit excellent damp-proof.

6. 发明专利

DE3466900D1 PROCESS FOR REMOVING METAL SURFACE OXIDE 未知
公开(公告)号：DE3466900D1
公开(公告)日：1987-11-26
申请号：DE3466900
申请日：1984-06-13
申请人： HITACHI LTD
发明人： FURUTANI YASUMASA , HIRA YASUO , HASEGAWA TAKASHI , MINATO AKIRA , SHOJI SABURO , SUMITA OSAO
IPC分类号： C23G1/24 , C25F1/00 , C25F1/04 , C25F1/06
摘要： The present invention provides a process for removing a metal surface oxide from a metallic substance by contacting the metal surface oxide layer with a deterging liquid to introduce electrons into the metal surface oxide in contact with the deterging liquid to dissolve the metal surface oxide, which process is characterized in that a metal piece or carbon piece is immersed in the deterging liquid into which gaseous hydrogen has been introduced and the metal piece or carbon piece is electrically connected to the metal surface oxide on the metallic substance. The metal piece is preferably platinum or vanadium. A preferred deterging liquid is one having a pH of about 5 to 7 and containing a complexing agent.

7. 发明专利

DE3586295D1 未知
公开(公告)号：DE3586295D1
公开(公告)日：1992-08-13
申请号：DE3586295
申请日：1985-04-19
申请人： HITACHI LTD
发明人： HONDA TAKASHI , FURUTANI YASUMASA , OHASHI KENYA , KASHIMURA EIJI , MINATO AKIRA , OSUMI KATSUMI , ITO HISAO
IPC分类号： G21F9/00
摘要： A nuclear power plant (1-5, 6a, 6b, 8-10) wherein sufaces of components contacting with nuclear reactor cooling water containing radioactive substances are coated with an oxide film, preferably being charged positively and/or containing chromium in an amount of 12% by weight or more, is prevented effectively from the deposition of radioactive substances thereon.

8. 发明专利

DE3571147D1 METHOD OF INHIBITING CORROSION OF ZIRCONIUM OR ITS ALLOY 未知
公开(公告)号：DE3571147D1
公开(公告)日：1989-07-27
申请号：DE3571147
申请日：1985-03-20
申请人： HITACHI LTD
发明人： SASAKI YUKO , SUZUKI KATSUMI , MINATO AKIRA , YOSHIDA TOMIO
IPC分类号： C23C22/54 , C23C22/58
摘要： The invention is to provide zirconium or its alloy used as a material for a chemical device and a nuclear reactor etc. is surface-treated with an oxidizing acid containing an oxidizing metal ion. The oxidizing acid is at least one member of a mixture of two or more selected from the group consisting of, for example, nitric acid (HN0 3 ), hydrogen peroxide (H 2 O 2 ), hypochlorous acid (HCeO) and potassium permanganate (K 2 MnO 4 ) solution, among which nitric acid is most preferred. The oxidizing metal ion is at least one member selected from the group consisting of, for example, ruthenium, rhodium, palladium, osmium, iridium, platinum, chromium, vanadium and cerium ions. Particularly preferred treatment conditions comprise a nitric acid concentration of 14 mol/ℓ (65 %) which is close to an azeotropic concentration, a ruthenium ion concentration of at least 1 x 10 -3 mol/ℓ and a treatmenttemperature of a boiling temperature (120°C). The surface of zirconium or its alloy to be treated may be washed previously with an aqueous acid solution containing hydrofluoric acid. The method of inhibiting corrosion of zirconium or its alloy by surface-treating it with an oxidizing acid containing an oxidizing metal ion can be formed easily a uniform protective film on the surface thereof.

9. 发明专利

DE3686600T2 未知
公开(公告)号：DE3686600T2
公开(公告)日：1993-04-15
申请号：DE3686600
申请日：1986-06-13
申请人： HITACHI LTD
发明人： KOBAYASHI SHIRO , ITOH MASAHIKO , MINATO AKIRA
IPC分类号： H01L23/02 , H01L21/56 , H01L23/28 , H01L23/29 , H01L23/31 , H01L23/49
摘要： A silver electrode (4) on a lead frame (2) is bonded to an aluminum electrode (5) on a silicon chip (1) with a copper wire (3). The resulting semiconductor device was immersed in a solution of benzotriazole in ethyl alcohol. An Ag-benzotriazole film (6) was formed on the surface of the silver electrode (4) and a Cu-benzotriazole film (7) was formed on the surface of the copper wire (3), while an Al-benzotriazole film (8) was formed on the surface of the aluminum electrode (5). Even if water penetrates into the semiconductor device, the silver electrode (4), the aluminum electrode (5) and the copper wire (3) are effectively protected by the anti-corrosive Ag-benzotriazole film (6), Cu-benzotriazole film (7) and Aℓ -benzotriazole film (8) to exhibit excellent damp-proof.

10. 发明专利

DE3577884D1 未知
公开(公告)号：DE3577884D1
公开(公告)日：1990-06-28
申请号：DE3577884
申请日：1985-11-05
申请人： HITACHI LTD
发明人： OHASHI KENYA , HONDA TAKASHI , FURUTANI YASUMASA , KASHIMURA EIZI , MINATO AKIRA , OHSUMI KATSUMI
IPC分类号： C23C8/10 , C23C8/16 , C23C8/18 , G21C17/022 , G21F9/00 , G21F9/28 , G21F9/30
摘要： 57 The present invention is concerned with a method of reducing radioactivity in a nuclear plant by preliminarily forming oxide films (15,16) on the surfaces of metallic structural members (17) to be in contact with high-temperature and high-pressure reactor water containing radioactive substances before said metallic members (17) are exposed to said reactor water. The method is characterized by the steps of subjecting said structural members (17) to a first-step oxidation treatment of heating said structural members (17) in an environment of a high temperature, and further subjecting the thus treated structural members (17) to a second step oxidation treatment of heating said treated structural members (17) in an environment having a higher oxidizing capacity than that of said environment in said first-step oxidation treatment to form a denser oxide film (15,16) than an oxide film (15) obtained in said first step oxidation treatment.

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