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1. 发明专利

JP2014101248A Metal-ceramics joining substrate and method of producing the same 有权
标题翻译：金属陶瓷接合基板及其制造方法
公开(公告)号：JP2014101248A
公开(公告)日：2014-06-05
申请号：JP2012253812
申请日：2012-11-20
申请人： Dowa Metaltech Kk , Dowaメタルテック株式会社 , Tokuyama Corp , 株式会社トクヤマ
发明人： OSANAI HIDEYO , KITAMURA MASAHIRO , AOKI HIROTO , KANECHIKA YUKIHIRO , SUGAWARA KEN , TAKEDA YASUKO
IPC分类号： C04B37/02 , H05K1/02 , H05K1/03 , H05K3/38
摘要： PROBLEM TO BE SOLVED: To provide a metal-ceramics joining substrate having excellent joining strength between a ceramics substrate and a metal plate, and further having excellent heat cycle resistance, and a method of producing the same.SOLUTION: In such a manner that the residual stress of a ceramics substrate 10 made of an aluminum nitride sintered compact is controlled to -50 MPa or less, the arithmetic average roughness Ra of a joint face with a metal plate 14 in the ceramics substrate 10 is controlled to 0.15 to 0.30 μm, the ten-point average roughness Rz is controlled to 0.7 to 1.1 μm, the maximum height Ry is controlled to 0.9 to 1.7 μm, the deflective strength of the ceramics substrate 10 is controlled to 500 MPa or less, and the thickness of a residual stress layer 10a formed along the surface of the ceramics substrate 10 is controlled to 25 μm or less, wet blast treatment of jetting slurry including spherical alumina as granules in a liquid to the surface of the ceramics substrate 10 is performed, and thereafter, the ceramics substrate 10 obtained by the wet blast treatment is joined with the metal plate 14 made of copper or a copper alloy via a brazing filler metal 12.
摘要翻译：要解决的问题：提供一种在陶瓷基板和金属板之间具有优异的接合强度并且还具有优异的耐热循环性的金属 - 陶瓷接合基板及其制造方法。解决方案：将由氮化铝烧结体制成的陶瓷基板10的残余应力控制在-50MPa以下，将与陶瓷基板10的金属板14的接合面的算术平均粗糙度Ra控制在0.15〜0.30μm，将十点平均粗糙度Rz控制为0.7〜1.1μm，将最大高度Ry控制为0.9〜1.7μm，将陶瓷基板10的偏转强度控制在500MPa以下，残留应力的厚度沿着陶瓷基板10的表面形成的层10a被控制为25μm以下，将包含作为颗粒的球状氧化铝的喷射浆料在液体中的喷砂处理湿式喷砂处理到陶瓷的表面然后，通过湿式喷砂处理获得的陶瓷基板10通过钎料12与铜或铜合金制的金属板14接合。

2. 发明专利

JP2012246169A Method for manufacturing aluminum nitride-metal joined substrate 有权
标题翻译：制造氮化钛金属接合基板的方法
公开(公告)号：JP2012246169A
公开(公告)日：2012-12-13
申请号：JP2011118421
申请日：2011-05-26
申请人： Tokuyama Corp , 株式会社トクヤマ
发明人： SUGAWARA KEN , KANECHIKA YUKIHIRO , AOKI HIROTO
IPC分类号： C04B37/02 , B24C1/00 , B24C3/00 , H05K3/38
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method which enables to stably obtain with good reproducibility an aluminum nitride-metal joined substrate that is excellent in flexural strength and thermal cycle properties of an aluminum nitride-metal joined plate after metal substrate joining, while reliably removing a releasing material and the like adhering to the surface of an aluminum nitride sintered body substrate.SOLUTION: The manufacturing method includes modifying the surface of an aluminum nitride sintered body substrate to be processed by collision of abrasive grains against the surface to be processed, and then joining a metal substrate to the surface, wherein abrasive grains having a higher hardness than the aluminum nitride sintered body are used as the above abrasive grains, and a liquid containing the abrasive grains at a concentration of 10-30 vol.% is jetted on the surface of the aluminum nitride sintered body substrate to be processed so that the pressure applied to the surface to be processed may become 0.07-0.12 MPa.
摘要翻译：要解决的问题：提供一种能够以良好的再现性稳定地获得氮化铝 - 金属接合基板的制造方法，该金属接合基板在金属基板接合之后的氮化铝 - 金属接合板的弯曲强度和热循环性能优异同时可靠地除去附着在氮化铝烧结体基板的表面上的剥离材料等。解决方案：制造方法包括通过磨粒与待加工表面的碰撞来改变要加工的氮化铝烧结体基材的表面，然后将金属基材接合到表面，其中具有较高的使用硬度比氮化铝烧结体作为上述磨粒，将含有浓度为10〜30体积％的磨粒的液体喷射到要加工的氮化铝烧结体基材的表面上，施加到待处理表面的压力可以变为0.07-0.12MPa。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2013082592A Method for producing aluminum nitride sintered body 有权
标题翻译：生产氮化铝烧结体的方法
公开(公告)号：JP2013082592A
公开(公告)日：2013-05-09
申请号：JP2011224583
申请日：2011-10-12
申请人： Tokuyama Corp , 株式会社トクヤマ
发明人： FUJII AYAKO , SUGAWARA KEN , KANECHIKA YUKIHIRO
IPC分类号： C04B35/581 , C04B35/626
摘要： PROBLEM TO BE SOLVED: To provide a method for producing an aluminum nitride sintered body, which can achieve characteristics such as high thermal conductivity and high insulation by molding and firing an aluminum nitride powder formed by pulverizing an aluminum nitride block object obtained by a direct nitriding process, while using the powder containing fine powder generated during the pulverization as it is.SOLUTION: The method for producing an aluminum nitride sintered body is characterized in that an aluminum nitride block object obtained by a direct nitriding process is pulverized so that the resulting aluminum nitride powder has a volume-based cumulative 90% particle diameter of 5-9 μm and preferably has a specific surface area of ≥3.6 m/g, and then 3-7 mass% of a rare earth metal oxide and 100-500 ppm (expressed in terms of CaO) of a calcium-based compound are added as a sintering aid to the aluminum nitride powder without separating fine powder generated during the pulverization, and firing is carried out at a temperature of >1,700 to 1,800°C in a non-oxidizing atmosphere.
摘要翻译：要解决的问题：提供一种制造氮化铝烧结体的方法，其可以通过模制和烧制通过粉碎由氮化铝块体获得的氮化铝块体形成的氮化铝粉末而实现诸如高导热性和高绝缘性的特性直接渗氮处理，同时使用在粉碎期间产生的含有细粉末的粉末。解决方案：制造氮化铝烧结体的方法的特征在于将通过直接渗氮工艺获得的氮化铝块体粉碎，使得所得到的氮化铝粉末的体积累积90％粒径为5 -9μm，比表面积优选≥3.6m，稀土金属氧化物为3-7质量％，表面积为100-500ppm 作为烧结助剂将钙系化合物作为烧结助剂添加到氮化铝粉末中，而不分离粉碎过程中产生的细粉末，在非晶态化合物的烧成温度> 1700〜1800℃下进行焙烧，氧化气氛。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2008047604A Metallized substrate, and semiconductor device 有权
标题翻译：金属化基板和半导体器件
公开(公告)号：JP2008047604A
公开(公告)日：2008-02-28
申请号：JP2006219533
申请日：2006-08-11
申请人： Tokuyama Corp , 株式会社トクヤマ
发明人： MAEDA MASAKATSU , YAMAMOTO YASUYUKI , SUGAWARA KEN
IPC分类号： H01L23/12 , H01L33/32 , H01L33/62
摘要： PROBLEM TO BE SOLVED: To provide a metallized substrate that enhances light-emission efficiency while efficiently discharging light, emitted from a semiconductor light-emitting element, to the outside; maintains a thickness of a solder layer when the semiconductor light-emitting element is bonded; improves bonding strength of a semiconductor device while improving adhesion between the solder layer and an electrode of the metallized substrate; and minimizes resistance between a device terminal and a substrate electrode.
SOLUTION: The metallized substrate is composed of a ceramic substrate, a first active metal layer formed on the ceramic substrate, an aluminum electrode formed on the first active metal layer, a barrier layer formed on at least a part of the surface of the aluminum electrode, and the solder layer formed on the barrier layer.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种有效地从半导体发光元件发射的光向外部放电的提高发光效率的金属化基板; 当半导体发光元件接合时，保持焊料层的厚度; 提高半导体器件的接合强度，同时提高焊料层与金属化基板的电极之间的粘附性; 并且最小化器件端子和衬底电极之间的电阻。解决方案：金属化衬底由陶瓷衬底，形成在陶瓷衬底上的第一有源金属层，形成在第一有源金属层上的铝电极，形成在至少一部分表面上的阻挡层铝电极和形成在阻挡层上的焊料层。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2006024778A Submount chip applied sheet and method for manufacturing the same 有权
标题翻译： SUBMET芯片应用表及其制造方法
公开(公告)号：JP2006024778A
公开(公告)日：2006-01-26
申请号：JP2004202097
申请日：2004-07-08
申请人： Tokuyama Corp , 株式会社トクヤマ
发明人： SUGAWARA KEN , MAEDA MASAKATSU
IPC分类号： H01L21/301
摘要： PROBLEM TO BE SOLVED: To provide a method for efficiently manufacturing a submount chip applied sheet to which a plurality of submount chips are applied with a substantially continuous surface forming one end surface of a substrate and one end surface of a solder pattern. SOLUTION: A metallic layer formed as an element bonding electrode is formed on the surface of a substrate, a submount chip material substrate is prepared as an insulating substrate having a plurality of solder patterns arranged and formed on the metallic layer, and a glass plate is bonded to one surface of the submount chip material substrate having the solder patterns. Thereafter, parts of the glass plate, the solder patterns, the metallic layer, and the insulating substrate are sequentially ground to form a cut guide groove; and then the glass plate is removed. Next, an adhesive sheet is applied to one surface of the obtained substrate having the solder patterns and to the opposing surface of the substrate, and then the substrate is cut into submount chips without fully cutting the adhesive sheet. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决问题的方案：提供一种用于有效地制造安装有多个基座芯片的基座芯片的基板的基板连续表面的方法，所述基板连续的表面形成基板的一个端面和焊料图案的一个端面。解决方案：在基板的表面上形成作为元件接合电极形成的金属层，准备基板芯片材料基板作为在金属层上布置并形成多个焊料图案的绝缘基板，并且玻璃板与具有焊料图案的基板芯片材料基板的一个面接合。然后，依次研磨玻璃板，焊锡图案，金属层，绝缘基板的一部分，形成切割导槽; 然后移除玻璃板。接下来，将粘合片施加到所获得的具有焊料图案的基板的一个表面和基板的相对表面上，然后将基板切割成基座芯片而不完全切割粘合片。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2013060323A Method of manufacturing aluminum nitride sintered granule 有权
标题翻译：制造氮化铝烧结颗粒的方法
公开(公告)号：JP2013060323A
公开(公告)日：2013-04-04
申请号：JP2011199400
申请日：2011-09-13
申请人： Tokuyama Corp , 株式会社トクヤマ
发明人： SUGAWARA KEN , FUKUNAGA YUTAKA , KANECHIKA YUKIHIRO
IPC分类号： C01B21/072 , C04B35/581
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing aluminum nitride sintered granules enabling aluminum nitride sintered granules having a large grain size to be industrially manufactured.SOLUTION: A green sheet containing an organic binder, aluminum nitride powder, and a sintering aid is cut into narrow strips, thereby obtaining green pieces of which the individual volume is preferably 1.5×10to 1.0×10μm. The obtained green pieces are then sintered at a temperature of, for example, 1,500 to 2,000°C, and aluminum nitride sintered granules are obtained.
摘要翻译：要解决的问题：提供一种制造氮化铝烧结颗粒的方法，其使得能够在工业上制造具有大晶粒尺寸的氮化铝烧结颗粒。解决方案：将含有有机粘合剂，氮化铝粉末和烧结助剂的生片切割成窄条，从而获得单个体积优选为1.5×10 的生坯到1.0×10 9 μm 3 。然后将得到的生坯在例如1500〜2000℃的温度下烧结，得到氮化铝烧结颗粒。版权所有（C）2013，JPO＆INPIT

7. 发明专利

JP2013060322A Method for producing aluminum nitride sintered granule 有权
标题翻译：用于生产氮化铝烧结颗粒的方法
公开(公告)号：JP2013060322A
公开(公告)日：2013-04-04
申请号：JP2011199399
申请日：2011-09-13
申请人： Tokuyama Corp , 株式会社トクヤマ
发明人： SUGAWARA KEN , AOKI HIROTO , KANECHIKA YUKIHIRO
IPC分类号： C04B35/581 , C01B21/072
摘要： PROBLEM TO BE SOLVED: To provide a method for producing aluminum nitride sintered granules, by which aluminum nitride sintered granules of large particle size can be industrially produced.SOLUTION: A resin composition containing a thermoplastic resin, aluminum nitride powder and a sintering aid is subjected to extrusion molding, and after molded into a strand-shaped green body preferably having a diameter of 300-1,000 μm, the strand-shaped green body is cut and processed preferably to a length 0.3-3 times longer than that of the diameter of the strand-shaped green body to obtain green chips, and then, the obtained green chips are fired, e.g., at 1,500-2,000°C to obtain aluminum nitride sintered granules.
摘要翻译：待解决的问题：提供一种制造氮化铝烧结颗粒的方法，通过该方法可以在工业上生产大粒径的氮化铝烧结颗粒。解决方案：将含有热塑性树脂，氮化铝粉末和烧结助剂的树脂组合物进行挤出成型，并且在模制成优选具有300-1,000μm直径的线状生坯体之后，将线状将生坯切成加工成比丝状生坯的直径长0.3〜3倍的长度，得到绿色切片，然后将得到的绿色切片烧成，例如1500-2000℃ 得到氮化铝烧结颗粒。版权所有（C）2013，JPO＆INPIT

8. 发明专利

JP2013027918A Method of manufacturing aluminum nitride-metal joint substrate 有权
标题翻译：制造氮化钛金属接头基板的方法
公开(公告)号：JP2013027918A
公开(公告)日：2013-02-07
申请号：JP2011167560
申请日：2011-07-29
申请人： Tokuyama Corp , 株式会社トクヤマ , Dowa Metaltech Kk , Dowaメタルテック株式会社
发明人： AOKI HIROTO , KANECHIKA YUKIHIRO , SUGAWARA KEN
IPC分类号： B23K1/20 , C04B37/02 , C04B41/91 , H01L23/12 , H01L23/15 , H05K3/26 , H05K3/46
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing an aluminum nitride-metal joint substrate exhibiting an improvement effect of joining strength of an aluminum nitride-sinter substrate and a metal substrate and further capable of stably obtaining an aluminum nitride-metal joint substrate having high strength and excellent in thermal cycle characteristics with good reproducibility.SOLUTION: The treating surface of the aluminum nitride-sinter substrate is modified by making abrasive grains collide with the treating surface and thereafter when the metal substrate is joined to the treating surface of an aluminum nitride sintered compact, abrasive grains having higher hardness than that of the aluminum nitride sintered compact are used as the abrasive grains, a liquid containing the abrasive grains in a concentration of 10-30 vol.% is jetted to the treating surface of the aluminum nitride-sinter substrate together with compressed air so that pressure acting on the treating surface becomes 0.10-0.25 MPa, the residual stress value of the aluminum nitride (112) surface of the treating surface obtained in a sinψ method using X-ray diffraction is made equal to or less than -50 MPa and a surface roughness is made equal to or less than 0.2 μm.
摘要翻译：解决的问题：为了提供一种制造氮化铝 - 金属接合基材的方法，其具有改善氮化铝烧结基材和金属基材的接合强度的效果，并且还能够稳定地获得氮化铝 - 金属接合基材具有高强度和优异的热循环特性，具有良好的再现性。解决方案：通过使磨料颗粒与处理表面碰撞来改变氮化铝烧结衬底的处理表面，此后当金属衬底接合到氮化铝烧结体的处理表面时，具有较高硬度的磨粒使用比氮化铝烧结体作为磨粒，含有浓度为10〜30体积％的磨粒的液体与压缩空气一起喷射到氮化铝烧结体的处理面上，使得作用在处理表面上的压力变为0.10-0.25MPa，使用X-射线衍射法获得的处理表面的氮化铝（112）表面的残余应力值在sin 2 使得射线衍射等于或小于-50MPa，并使表面粗糙度等于或小于0.2μm。版权所有（C）2013，JPO＆INPIT

9. 发明专利

JP2012111671A Method for producing aluminum nitride sintered compact workpiece 审中-公开
标题翻译：生产氮化铝烧结工艺的方法
公开(公告)号：JP2012111671A
公开(公告)日：2012-06-14
申请号：JP2010264079
申请日：2010-11-26
申请人： Tokuyama Corp , 株式会社トクヤマ
发明人： SUGAWARA KEN , KANECHIKA YUKIHIRO
IPC分类号： C04B35/581 , C04B41/87
摘要： PROBLEM TO BE SOLVED: To provide a method for suppressing thermal deformation in heat treatment and obtaining a workpiece having good thermal conductivity characteristics, in the production of the workpiece by treating an aluminum nitride sintered compact having yttrium oxide as a sintering aid at an elevated temperature higher than 1,750°C.SOLUTION: An aluminum nitride sintered compact in which a YAG (3YO-5AlO) crystal phase and a YAP(YO-AlO) crystal phase coexist in a grain boundary phase and the existence ratio of a YAM(2YO-AlO) crystal phase to the YAG crystal phase and the YAP crystal phase is 10% or less of the sum of intensity ratios of the X-ray diffraction pattern of the YAG crystal phase (211) face, the YAP crystal phase (220) face and YAM crystal phase (210) face to the aluminum nitride (100) face, is used as the aluminum nitride sintered compact to be subjected to the heat treatment.
摘要翻译：解决方案：为了提供一种抑制热处理中的热变形并获得具有良好导热特性的工件的方法，在通过将具有氧化钇的氮化铝烧结体作为烧结助剂进行处理的工件的制造中高于1750°C的高温。解决方案：一种氮化铝烧结体，其中YAG（3Y 2 0 3A 2 O 3 ）晶体相位和YAP（Y 2 O 3 -Al 2 结晶相在晶界相共存，存在比一个YAM（2Y 2 O 3 -Al 2 =“POST”> 3 ）晶相，YAG晶相和YAP晶相的YAG晶相（211）面的X射线衍射图的强度比之和为10％以下使用面对氮化铝（100）面的YAP晶相（220）面和YAM晶相（210）作为要进行热处理的氮化铝烧结体。版权所有（C）2012，JPO＆INPIT

10. 发明专利

JP2008290314A Metalized substrate and its manufacturing method 有权
标题翻译：金属化基板及其制造方法
公开(公告)号：JP2008290314A
公开(公告)日：2008-12-04
申请号：JP2007137037
申请日：2007-05-23
申请人： Tokuyama Corp , 株式会社トクヤマ
发明人： SUGAWARA KEN , YAMAMOTO YASUYUKI , MAEDA MASAKATSU
IPC分类号： B32B9/00 , B32B15/04 , H01L33/64 , H05K1/03
摘要： PROBLEM TO BE SOLVED: To provide a black metalized substrate which absorbs light from a mounted LED and the like, prevents the reflection and transmittance of light and has a high heat conductivity and an excellent insulation and a manufacturing method of the metalized substrate which does not cause distortion and the like after firing. SOLUTION: The metalized substrate includes a substrate of an aluminum nitride sintered compact, a light-absorbing layer formed on the substrate, an insulation layer on the-light absorbing layer and a metal layer formed on the insulation layer. COPYRIGHT: (C)2009,JPO&INPIT

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