会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明授权
    • Memory card reading/writing apparatus, access method, program and storage medium thereof
    • 存储卡读/写装置,存取方法,程序和存储介质
    • US06970066B2
    • 2005-11-29
    • US10617686
    • 2003-07-14
    • Shizuka SakamotoMasahiro KawasakiTohru SuetomoYasuhiro Shibata
    • Shizuka SakamotoMasahiro KawasakiTohru SuetomoYasuhiro Shibata
    • G06F21/10G06F21/79G05B19/00
    • G06F21/79G06F21/10G06F2221/2111
    • A memory card reading/writing apparatus, access method, program and storage medium thereof, that have a psychological security function, or in other words a mild security function and that make it possible to perform various kinds of management of the memory card even when the memory card is lost. In the memory card reading/writing apparatus of this invention, an apparatus-user-information-acquisition unit acquires apparatus-user information from a memory unit that stores apparatus-user information that identifies the user of the memory card reading/writing apparatus. Also, a memory-card-user-information-acquisition unit acquires the main-memory-card-user information from the memory card that identifies the main user of the memory card. A user-information-comparison unit compares the two kinds of information, and outputs a comparison result. An output unit outputs specific output based on the comparison result.
    • 具有心理安全功能的记忆卡读/写装置,访问方式,程序和存储介质,或者换句话说是温和的安全功能,并且即使当存储卡读/写设备,访问方法,程序和存储介质也可以执行存储卡的各种管理 存储卡丢失。 在本发明的存储卡读/写装置中,装置 - 用户信息获取单元从存储装置用户信息的存储单元获取设备用户信息,该装置用户信息标识存储卡读/写装置的用户。 此外,存储卡用户信息获取单元从识别存储卡的主要用户的存储卡获取主存储卡用户信息。 用户信息比较单元比较两种信息,并输出比较结果。 输出单元根据比较结果输出特定输出。
    • 4. 发明申请
    • Recording device, program and integrated circuit
    • 录音设备,程序和集成电路
    • US20060291804A1
    • 2006-12-28
    • US10546678
    • 2004-06-11
    • Ryuichi HoriYouichi YamamotoShuji OkamotoYasuyuki MatuuraMasahiro KawasakiAkihiro Watanabe
    • Ryuichi HoriYouichi YamamotoShuji OkamotoYasuyuki MatuuraMasahiro KawasakiAkihiro Watanabe
    • H04N7/00
    • G11B27/034
    • When receiving a record presetting from the record presetting unit 8, the detection unit 10 compares the received record presetting with a record presetting that has been received earlier, to detect, if time periods indicated by the record presettings overlap, an overlapping time portion and one or more non-overlapping time portion. The detection unit 10 then newly generates record presettings in one-to-one correspondence with the overlapping and non-overlapping time portions. The recording unit 11 performs a recording operation with reference to the record presettings newly generated by the detection unit 10. Thus, the recording unit 11 can perform a recording operation as described by the original record presettings, which indicate the time periods that overlap. The generation unit 12 generates, on a storage medium, Cell information for each of the original record presettings, and appends user information to the Cell information.
    • 当从记录预设单元8接收到记录预设时,检测单元10比较接收的记录预设与较早接收到的记录预设,以检测由记录预设所指示的时间段重叠的重叠时间部分和一个 或更多的非重叠时间部分。 然后,检测单元10与重叠和非重叠的时间部分重新生成与一一对应的记录预设。 记录单元11参照由检测单元10新产生的记录预设进行记录操作。 因此,记录单元11可以执行由原始记录预设所描述的记录操作,其指示重叠的时间段。 生成单元12在存储介质上生成用于每个原始记录预设的小区信息,并将用户信息附加到小区信息。
    • 9. 发明授权
    • Semiconductor device and manufacturing method thereof
    • 半导体装置及其制造方法
    • US07081641B2
    • 2006-07-25
    • US10786097
    • 2004-02-26
    • Masahiro KawasakiShuji ImazekiMasahiko Ando
    • Masahiro KawasakiShuji ImazekiMasahiko Ando
    • H01L29/08
    • H01L51/0545H01L51/0021H01L51/0037H01L51/0052H01L51/0516
    • An object of the present invention is to provide a semiconductor device such as a display device, ID tag, sensor or the like at low cost by using a bottom contact type organic TFT as a switching element. In the present invention, the semiconductor layer of the bottom contact type organic TFT is formed of a polycrystalline material, and the taper width of each of the source and drain electrodes of the TFT in the direction of the channel length is smaller than the average particle size of semiconductor crystals grown on the source and drain electrodes. Alternatively, the side on the channel side of each of the source and drain electrodes of the bottom contact type organic TFT is formed so as to be convex upward with respect to the substrate surface. Alternatively, an organic compound layer different from the semiconductor layer of the bottom contact type organic TFT is made present between each of the source and drain electrodes of the bottom contact type organic TFT and said semiconductor layer, in a thickness of not more than 10 Å and not less than 1 Å.
    • 本发明的目的是通过使用底接触型有机TFT作为开关元件,以低成本提供诸如显示装置,ID标签,传感器等的半导体器件。 在本发明中,底部接触型有机TFT的半导体层由多晶材料形成,TFT的源极和漏极的沟道长度方向的锥形宽度小于平均粒子 在源极和漏极上生长的半导体晶体的尺寸。 或者,底接触型有机TFT的源电极和漏电极的沟道侧的一侧形成为相对于衬底表面向上凸起。 或者,在底接触型有机TFT和所述半导体层的每个源电极和漏电极之间存在不同于底接触型有机TFT的半导体层的有机化合物层,其厚度不大于 并且不小于1。