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1. 发明授权

US5578554A Metal oxide material and method of manufacturing the same 失效
标题翻译：金属氧化物材料及其制造方法
公开(公告)号：US5578554A
公开(公告)日：1996-11-26
申请号：US441665
申请日：1995-05-15
申请人： Jun Akimitsu , Norio Kaneko , Tohru Den , Tamaki Kobayashi
发明人： Jun Akimitsu , Norio Kaneko , Tohru Den , Tamaki Kobayashi
IPC分类号： C01G1/00 , C01G3/00 , C04B35/00 , C04B35/45 , H01B12/00 , H01B13/00 , H01L39/12 , C04B35/50
CPC分类号： C04B35/4504 , H01L39/126 , Y10S505/779 , Y10S505/781
摘要： A metal oxide material comprises components, the composition of which is expressed by the following composition formula (I):Ln.sub.a Ca.sub.b Sr.sub.c Ba.sub.d Cu.sub.2+e-h M.sub.h O.sub.6+f C.sub.g(I)wherea+b+c+d=3, 0.2.ltoreq.a.ltoreq.0.8,0.2.ltoreq.b.ltoreq.1.0, 0.3.ltoreq.c.ltoreq.2.2,0.ltoreq.d.ltoreq.1.7, 0.ltoreq.e.ltoreq.0.8,0.ltoreq.h.ltoreq.0.2, 0
摘要翻译：金属氧化物材料包含组分，其组成由以下组成式（I）表示：LnaCabSrcBadCu2 + e-hMhO6 + fCg（I）其中a + b + c + d = 3,0.2， =0.8,0.2≤b≤1.0,0.3≤n≤2.2,0≤d≤1.7,0,0≤i≤0.8,0≤h= = 0.2,0

2. 发明授权

US5512542A Metallic oxide with boron and process for manufacturing the same 失效
标题翻译：具有硼的金属氧化物及其制造方法
公开(公告)号：US5512542A
公开(公告)日：1996-04-30
申请号：US297767
申请日：1994-08-30
申请人： Tohru Den , Norio Kaneko , Tamaki Kobayashi
发明人： Tohru Den , Norio Kaneko , Tamaki Kobayashi
IPC分类号： C01G1/00 , C01G3/00 , C04B35/45 , H01B13/00 , H01L39/24 , H01B12/00 , C01B35/12 , C04B35/50
CPC分类号： H01L39/2419 , C04B35/4508 , Y10S505/777 , Y10S505/778 , Y10S505/779 , Y10S505/78
摘要： A novel metallic oxide of a Ln-Ca-Sr-Ba-Cu-B-O type and a process for manufacturing such a metallic oxide. The above metallic oxide has a composition expressed by the following formula (I):(Ln.sub.1-a Ca.sub.a)(Sr.sub.2-b Ba.sub.b)(Cu.sub.3-c B.sub.c)O.sub.d(I)wherein Ln is one or more kinds of elements selected from the group consisting of Y and lanthanoid elements except for Ce and Tb and wherein the following conditions are met: 0.1.ltoreq.a.ltoreq.0.5, 0.7.ltoreq.b.ltoreq.1.7, 0.1.ltoreq.c.ltoreq.0.5, and 6.5.ltoreq.d.ltoreq.7.5. A process for manufacturing the metallic oxide has the following steps. A mixture of materials including H.sub.3 BO.sub.3 used as a starting material of B is prepared. The resultant mixture is heated at a rate of 5.degree. C. or lower per minute up to 900.degree. C. or lower. Then, it is heated in an oxygen atmosphere at a range from 900.degree.-1050.degree. C.
摘要翻译： Ln-Ca-Sr-Ba-Cu-B-O型的新型金属氧化物及其制造方法。上述金属氧化物具有由下式（I）表示的组成：（Ln1-aCaa）（Sr2-bBab）（Cu3-cBc）Od（I）其中Ln是选自以下的一种或多种元素： Y和除了Ce和Tb之外的镧系元素，其中满足以下条件：0.1

3. 发明授权

US5583093A Metal oxide material with Ln, Sr, Cu, O, optionally Ca, and at least one of Fe, Co, Ti, V, Ge, Mo, and W 失效
标题翻译：具有Ln，Sr，Cu，O，任选Ca的金属氧化物材料，以及Fe，Co，Ti，V，Ge，Mo和W中的至少一种
公开(公告)号：US5583093A
公开(公告)日：1996-12-10
申请号：US473362
申请日：1995-06-07
申请人： Tohru Den , Tamaki Kobayashi
发明人： Tohru Den , Tamaki Kobayashi
IPC分类号： C04B35/45 , H01L39/12 , H01B12/00 , C04B35/50 , C04B35/505
CPC分类号： C04B35/4504 , C04B35/45 , H01L39/126 , Y10S505/778 , Y10S505/779 , Y10S505/78 , Y10S505/781
摘要： Provided is a metal oxide material represented by the composition formula of Ln.sub.a Sr.sub.b Cu.sub.3-x M.sub.x O.sub.c, where 2.7.ltoreq.a+b.ltoreq.3.3; 0.8 .ltoreq.a.ltoreq.1.2; 6.ltoreq.c.ltoreq.9; and 0.05 .ltoreq.x.ltoreq.0.7, Ln is at least one element selected from the group of elements of Y and lanthanoids or an atomic group consisting of said elements, and M is at least one element selected from the group of elements of Ti, V, Ga, Ge, Mo, W and Re or an atomic group consisting of said elements.
摘要翻译：提供由组成式LnaSrbCu3-xMxOc表示的金属氧化物材料，其中2.7

4. 发明授权

US5512538A Metal oxide material with Ln, Sr, Cu, Re, O, and optionally Ca 失效
标题翻译：具有Ln，Sr，Cu，Re，O和任选的Ca的金属氧化物材料
公开(公告)号：US5512538A
公开(公告)日：1996-04-30
申请号：US266319
申请日：1994-06-27
申请人： Tohru Den , Tamaki Kobayashi
发明人： Tohru Den , Tamaki Kobayashi
IPC分类号： C04B35/45 , H01L39/12 , H01B12/00 , C04B35/50 , C04B35/505
CPC分类号： C04B35/4504 , C04B35/45 , H01L39/126 , Y10S505/778 , Y10S505/779 , Y10S505/78 , Y10S505/781
摘要： Provided is a metal oxide material represented by the composition formula of Ln.sub.a Sr.sub.b Cu.sub.3-x M.sub.x O.sub.c, where 2.7.ltoreq.a+b.ltoreq.3.3; 0.8.ltoreq.a.ltoreq.1.2; 6.ltoreq.c.ltoreq.9; and 0.05 .ltoreq.x.ltoreq.0.7, Ln is at least one element selected from the group of elements of Y and lanthanoids or an atomic group consisting of said elements, and M is at least one element selected from the group of elements of Ti, V, Ga, Ge, Mo, W and Re or an atomic group consisting of said elements.
摘要翻译：提供由组成式LnaSrbCu3-xMxOc表示的金属氧化物材料，其中2.7

5. 发明授权

US5607658A Method of manufacturing metallic oxide and metallic oxide manufactured by the same 失效
标题翻译：制造金属氧化物和金属氧化物的方法
公开(公告)号：US5607658A
公开(公告)日：1997-03-04
申请号：US523752
申请日：1995-09-05
申请人： Norio Kaneko , Tamaki Kobayashi
发明人： Norio Kaneko , Tamaki Kobayashi
IPC分类号： C01G3/00 , H01L39/24 , C04B35/00
CPC分类号： H01L39/247 , C01G3/006 , C01P2002/72 , C01P2002/77
摘要： A metal oxide manufacturing method includes the steps of preparing the metal oxide expressed by a general formula of AXBYCZDn, (where A represents at least one element selected from a group consisting of a rare earth element, yttrium and an element obtained either by substituting part of rare earth elements with alkali metals or alkali earth metals or by substituting part of yttrium with alkali metals or alkali earth metals, B represents an alkali earth metal, C represents copper or an element obtained by substituting part of copper with transition metals, and D represents oxygen, and where when X=1, Y=2 to 4, Z=2.7 to 6 and n=6 to 13), reducing the metal oxide expressed by the general formula, and halogenating the reduced metal oxide. Part of oxygen (D) of the metal oxide expressed by the general formula is substituted with the halogen elements.
摘要翻译：金属氧化物制造方法包括以下步骤：制备由通式AXBYCZDn表示的金属氧化物（其中A表示选自由稀土元素，钇组成的组中的至少一种元素，稀土元素与碱金属或碱土金属或用碱金属或碱土金属取代部分钇，B表示碱土金属，C表示铜或通过用过渡金属代替铜的一部分而得到的元素，D表示氧，当X = 1时，Y = 2〜4，Z = 2.7〜6，n = 6〜13），还原由通式表示的金属氧化物，并且还原金属氧化物。由通式表示的金属氧化物的氧（D）的一部分被卤素元素取代。

6. 发明授权

US06342672B1 Superconducting lead with recoverable and nonrecoverable insulation 失效
标题翻译：超导导线，具有可恢复和不可恢复的绝缘
公开(公告)号：US06342672B1
公开(公告)日：2002-01-29
申请号：US08385976
申请日：1995-02-09
申请人： Norio Kaneko , Tamaki Kobayashi
发明人： Norio Kaneko , Tamaki Kobayashi
IPC分类号： H01B1200
CPC分类号： H01F6/065 , H02G15/34 , Y02E40/648
摘要： A superconducting apparatus includes a cryogenic chamber, superconducting equipment contained in the cryogenic chamber and a lead secured to the cryogenic chamber and connected to the superconducting equipment. A structured member for a prevention of an electric discharge is provided between the lead and an area for securing the lead of the cryogenic chamber. The structured member for the prevention of electric discharge may be a laminate of a conducting layer and a insulating layer having recoverable and non-recoverable insulation, and have an effect of shielding the corresponding lead from electromagnetic noises.
摘要翻译：超导装置包括低温室，包含在低温室中的超导设备和固定到低温室并连接到超导设备的引线。在引线和用于固定低温室的引线的区域之间设置有用于防止放电的结构构件。用于防止放电的结构构件可以是具有可恢复和不可恢复绝缘的导电层和绝缘层的层压体，并且具有屏蔽相应引线免受电磁噪声的作用。

7. 发明授权

US08022608B2 Electron-emitting device, electron-emitting apparatus, electron source, image display device and information display/reproduction apparatus 失效
标题翻译：电子发射装置，电子发射装置，电子源，图像显示装置和信息显示/再现装置
公开(公告)号：US08022608B2
公开(公告)日：2011-09-20
申请号：US12481851
申请日：2009-06-10
申请人： Koki Nukanobu , Keisuke Yamamoto , Tamaki Kobayashi , Takuto Moriguchi
发明人： Koki Nukanobu , Keisuke Yamamoto , Tamaki Kobayashi , Takuto Moriguchi
IPC分类号： H01J1/88 , H01J1/30
CPC分类号： H01J1/316
摘要： By applying a drive voltage Vf [V] between first and second conductive films, when electrons are emitted by the first conductive film, an equipotential line of 0.5 Vf [V] is inclined toward the first conductive film, rather than toward the second conductive film, in the vicinity of the electron emitting portion of the first conductive film, in a cross section extending across the electron emitting portion and the portion of the second conductive film located nearest the electron emitting portion. The present invention improves electron emission efficiency.
摘要翻译：通过在第一导电膜和第二导电膜之间施加驱动电压Vf [V]，当电子被第一导电膜发射时，0.5Vf [V]的等电位线朝向第一导电膜倾斜，而不是朝向第二导电膜在第一导电膜的电子发射部分附近，横跨电子发射部分的横截面和位于最靠近电子发射部分的第二导电膜的部分。本发明提高电子发射效率。

8. 发明授权

US07786658B1 Electron-emitting device and image display apparatus using the same 失效
标题翻译：电子发射装置和使用其的图像显示装置
公开(公告)号：US07786658B1
公开(公告)日：2010-08-31
申请号：US12421773
申请日：2009-04-10
申请人： Junya Tanaka , Shin Kitamura , Tamaki Kobayashi , Tsuyoshi Takegami
发明人： Junya Tanaka , Shin Kitamura , Tamaki Kobayashi , Tsuyoshi Takegami
IPC分类号： H01J1/02
CPC分类号： H01J1/3046 , H01J3/022 , H01J31/127 , H01J2329/0423
摘要： An electron-emitting device has an insulating layer having a side surface, a recess portion formed on the side surface of the insulating layer, a gate electrode which is arranged above the recess portion, and a wedge-shaped emitter which is arranged on an edge of a lower side of the recess portion and has a first slope on a side of the recess portion and a second slope on a side opposite to the recess portion. A lower end of the first slope of the emitter enters the recess portion, and both the first slope and the second slope of the emitter tilt to an outside of the recess portion.
摘要翻译：电子发射器件具有绝缘层，具有侧表面，形成在绝缘层的侧表面上的凹陷部分，设置在凹部上方的栅电极和布置在边缘上的楔形发射体并且在所述凹部的一侧具有第一斜面，在与所述凹部相反的一侧具有第二斜面。发射体的第一斜面的下端进入凹部，发光体的第一斜面和第二斜面都向凹部的外侧倾斜。

9. 发明申请

US20100201246A1 ELECTRON-EMITTING DEVICE AND IMAGE DISPLAY APPARATUS USING THE SAME 失效
标题翻译：电子发射装置和使用其的图像显示装置
公开(公告)号：US20100201246A1
公开(公告)日：2010-08-12
申请号：US12421773
申请日：2009-04-10
申请人： Junya Tanaka , Shin Kitamura , Tamaki Kobayashi , Tsuyoshi Takegami
发明人： Junya Tanaka , Shin Kitamura , Tamaki Kobayashi , Tsuyoshi Takegami
IPC分类号： H01J1/02
CPC分类号： H01J1/3046 , H01J3/022 , H01J31/127 , H01J2329/0423
摘要： An electron-emitting device has an insulating layer having a side surface, a recess portion formed on the side surface of the insulating layer, a gate electrode which is arranged above the recess portion, and a wedge-shaped emitter which is arranged on an edge of a lower side of the recess portion and has a first slope on a side of the recess portion and a second slope on a side opposite to the recess portion. A lower end of the first slope of the emitter enters the recess portion, and both the first slope and the second slope of the emitter tilt to an outside of the recess portion.
摘要翻译：电子发射器件具有绝缘层，具有侧表面，形成在绝缘层的侧表面上的凹陷部分，设置在凹部上方的栅电极和布置在边缘上的楔形发射体并且在所述凹部的一侧具有第一斜面，在与所述凹部相反的一侧具有第二斜面。发射体的第一斜面的下端进入凹部，发光体的第一斜面和第二斜面都向凹部的外侧倾斜。

10. 发明授权

US07513814B2 Method of manufacturing electron-emitting device, electron source using electron-emitting device, method of manufacturing image display apparatus, and information display reproduction apparatus using image display apparatus manufactured by the method 失效
标题翻译：使用电子发射器件制造电子发射器件的方法，使用电子发射器件的电子源，图像显示装置的制造方法以及使用该方法制造的图像显示装置的信息显示再现装置
公开(公告)号：US07513814B2
公开(公告)日：2009-04-07
申请号：US11159308
申请日：2005-06-23
申请人： Tamaki Kobayashi , Keisuke Yamamoto , Hisashi Sakata
发明人： Tamaki Kobayashi , Keisuke Yamamoto , Hisashi Sakata
IPC分类号： H01J9/00 , H01J9/24
CPC分类号： H01J9/027
摘要： An effective voltage V′ effectively applied to a gap 7 during an “activation step” is controlled to a desired value. In the “activation step”, a voltage is repeatedly applied between a first electroconductive film 4a and a second electroconductive film 4b while controlling voltages outputted from a voltage source 51 so that a value βeffect becomes a desired value.
摘要翻译：在“激活步骤”期间有效地施加到间隙7的有效电压V'被控制到期望值。在“激活步骤”中，在控制从电压源51输出的电压的同时，在第一导电膜4a和第二导电膜4b之间重复地施加电压，使得值效应成为期望值。

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