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1. 发明专利

JP2011190131A Method for manufacturing aluminum nitride single crystal 审中-公开
标题翻译：制造氮化铝单晶的方法
公开(公告)号：JP2011190131A
公开(公告)日：2011-09-29
申请号：JP2010056221
申请日：2010-03-12
申请人： Tohoku Univ , Tokuyama Corp , 国立大学法人東北大学 , 株式会社トクヤマ
发明人： FUKUYAMA HIROYUKI , HATTORI TAKESHI , AZUMA MASANOBU , TAKADA KAZUYA
IPC分类号： C30B29/38 , C30B25/14 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a large-sized, good-crystallization aluminum nitride single crystal.
SOLUTION: In the manufacturing method of an aluminum nitride single crystal, a nitrogen gas is circulated in the presence of a raw material gas-generating substrate to generate aluminum gas or an aluminum oxide gas, carbon molded articles, and seed crystals for depositing aluminum nitride single crystals; and when the aluminum nitride single crystals are grown in a heating environment, the carbon molded articles are arranged spaced with intervals nearly parallel to the nitrogen gas circulating direction on the raw material-generating substrate, the raw material gas-generating substrate is arranged on the upstream side in the nitrogen gas circulating direction, and the seed crystals for depositing aluminum nitride single crystals are arranged on the downstream side to make the aluminum nitride single crystals grow on the seed crystals.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：待解决的问题：提供一种制造大型，良好结晶的氮化铝单晶的方法。解决方案：在氮化铝单晶的制造方法中，在原料气体发生基板的存在下使氮气循环，生成铝气体或氧化铝气体，碳成型体和晶种，沉积氮化铝单晶; 并且当氮化铝单晶在加热环境中生长时，在原料生成基板上将碳成型体配置成与氮气循环方向大致平行的间隔，将原料气体生成用基板配置在在氮气循环方向的上游侧，并且在下游侧配置用于沉积氮化铝单晶的晶种，以使氮化镓单晶在晶种上生长。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2005053755A Epitaxial thin film of oxide and its manufacturing method 有权
标题翻译：氧化物的外延薄膜及其制造方法
公开(公告)号：JP2005053755A
公开(公告)日：2005-03-03
申请号：JP2003287944
申请日：2003-08-06
申请人： Tohoku Univ , 国立大学法人東北大学
发明人： SATA KYOKO , HATTORI TAKESHI , KAWAMURA JUNICHI , YAMADA TEPPEI
IPC分类号： C30B29/22 , C23C14/28 , C23C14/58 , C30B23/08 , C30B29/24 , C30B33/02
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing en epitaxial thin film of an oxide by which the film deposition condition can be reduced to a low temperature around room temperature and the structure of a film deposition device can be simplified.
SOLUTION: The epitaxial thin film of the oxide is formed by depositing an oxide film on a substrate, whose temperature is kept at a temperature of ≤100°C, by a pulse laser deposition method (PLD method) while irradiating the substrate with radical oxygen of 5×10
14 -5×10
15 atomos/cm
2 /s and then subjecting the deposited oxide film to annealing treatment at a temperature of 600-750°C for 1-10 h.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种制造氧化膜的外延薄膜的方法，通过该方法可以将膜沉积条件降低到室温附近的低温，并且可以简化成膜装置的结构。解决方案：通过在照射基板的同时通过脉冲激光沉积法（PLD法）将温度保持在≤100℃的温度的基板上沉积氧化膜，形成氧化物的外延薄膜用5×10 14 / SP> -5×10 15原子/厘米2 /秒的自由基氧，然后对沉积的氧化物膜进行退火处理在600-750℃的温度下1-10小时。版权所有（C）2005，JPO＆NCIPI

3. 发明公开

EP2508656A4 PROCESS FOR PRODUCING SINGLE-CRYSTAL ALUMINUM NITRIDE 审中-公开
标题翻译：用于生产单氮化物结晶铝
公开(公告)号：EP2508656A4
公开(公告)日：2013-08-07
申请号：EP10833378
申请日：2010-11-29
申请人： UNIV TOHOKU , TOKUYAMA CORP
发明人： FUKUYAMA HIROYUKI , AZUMA MASANOBU , TAKADA KAZUYA , HATTORI TAKESHI
IPC分类号： C30B29/38 , C30B23/00 , C30B25/02 , C30B29/62
CPC分类号： C30B29/403 , C30B23/00 , C30B23/007 , C30B25/00 , C30B29/62

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