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1. 发明申请

US20100029079A1 Chemical mechanical polishing composition and methods relating thereto 失效
标题翻译：化学机械抛光组合物及其相关方法
公开(公告)号：US20100029079A1
公开(公告)日：2010-02-04
申请号：US12185600
申请日：2008-08-04
申请人： Tirthankar Ghosh , Terence M. Thomas , Hongyu Wang
发明人： Tirthankar Ghosh , Terence M. Thomas , Hongyu Wang
IPC分类号： H01L21/461 , C09K13/00
CPC分类号： C09K13/00 , C09G1/02 , C09G1/04 , H01L21/30625 , H01L21/3212
摘要： A chemical mechanical polishing composition useful for chemical mechanical polishing of a patterned semiconductor wafer containing a nonferrous metal. The chemical mechanical polishing composition comprises an inhibitor for the nonferrous metal; a copolymer of poly(ethylene glycol)methyl ether (meth)acrylate and 1-vinylimidazole; and water.
摘要翻译：用于化学机械抛光含有有色金属的图案化半导体晶片的化学机械抛光组合物。化学机械抛光组合物包含有色金属的抑制剂; 聚（乙二醇）甲基醚（甲基）丙烯酸酯和1-乙烯基咪唑的共聚物; 和水。

2. 发明授权

US08540893B2 Chemical mechanical polishing composition and methods relating thereto 失效
标题翻译：化学机械抛光组合物及其相关方法
公开(公告)号：US08540893B2
公开(公告)日：2013-09-24
申请号：US12185600
申请日：2008-08-04
申请人： Tirthankar Ghosh , Terence M. Thomas , Hongyu Wang , Scott A. Ibbitson
发明人： Tirthankar Ghosh , Terence M. Thomas , Hongyu Wang , Scott A. Ibbitson
IPC分类号： C09K13/00 , C09K13/04 , H01R13/04 , C03C15/00 , C03C25/68
CPC分类号： C09K13/00 , C09G1/02 , C09G1/04 , H01L21/30625 , H01L21/3212
摘要： A chemical mechanical polishing composition useful for chemical mechanical polishing of a patterned semiconductor wafer containing a nonferrous metal. The chemical mechanical polishing composition comprises an inhibitor for the nonferrous metal; a copolymer of poly(ethylene glycol)methyl ether (meth)acrylate and 1-vinylimidazole; and water.
摘要翻译：用于化学机械抛光含有有色金属的图案化半导体晶片的化学机械抛光组合物。化学机械抛光组合物包含有色金属的抑制剂; 聚（乙二醇）甲基醚（甲基）丙烯酸酯和1-乙烯基咪唑的共聚物; 和水。

3. 发明授权

US06605537B2 Polishing of metal substrates 有权
公开(公告)号：US06605537B2
公开(公告)日：2003-08-12
申请号：US10043664
申请日：2001-10-26
申请人： Jinru Bian , Tirthankar Ghosh , Terence M. Thomas
发明人： Jinru Bian , Tirthankar Ghosh , Terence M. Thomas
IPC分类号： H01L21302
CPC分类号： H01L21/3212 , B24B37/0056 , B24B37/042
摘要： A method of polishing a semiconductor substrate by adjusting the polishing composition with a BTA concentration that raises the metal removal rate when polishing at a relatively high polishing pressure, and that minimizes the metal removal rate when polishing metal in trough at a lower polishing pressure; and adjusting the polishing pressure on metal in each trough to a level that removes metal from trough at a minimized removal rate, while simultaneously polishing the excess metal with a higher polishing pressure.

4. 发明授权

US06936541B2 Method for planarizing metal interconnects 有权
标题翻译：平面化金属互连的方法
公开(公告)号：US06936541B2
公开(公告)日：2005-08-30
申请号：US10402168
申请日：2003-03-28
申请人： Jinru Bian , Tirthankar Ghosh , Terence M. Thomas
发明人： Jinru Bian , Tirthankar Ghosh , Terence M. Thomas
IPC分类号： B24B37/005 , B24B37/04 , C09G1/00 , C09G1/02 , H01L21/321 , H01L21/302
CPC分类号： H01L21/3212 , B24B37/0056 , B24B37/044 , C09G1/00 , C09G1/02
摘要： A method for planarizing metal interconnects of a semiconductor wafer includes the steps of polishing the semiconductor wafer with a polishing solution and a polishing pad to planarize the metal interconnects. The polishing solution has by weight percent, 0.15 to 5 benzotriazole, 0 to 1 abrasive, 0 to 10 polymeric particles, 0 to 5 polymer-coated particles and balance water at a pH of less than 5 and a removal rate-pressure sensitivity (dr/dp) of at least 750 (Å/min/psi). The polishing simultaneously accelerates removal of projecting metal from the metal interconnects with the polishing pad providing a first pressure that increases removal rate of the projecting metal; and it inhibits removal of recessed metal from the metal interconnects with the polishing pad providing a second pressure that decreases removal of the recessed metal.
摘要翻译：用于平面化半导体晶片的金属互连的方法包括以下步骤：用抛光溶液和抛光垫对半导体晶片进行抛光，以平坦化金属互连。抛光溶液的重量百分数为0.15至5苯并三唑，0至1份磨料，0至10种聚合物颗粒，0至5种聚合物涂覆的颗粒，并且在pH小于5的情况下平衡水和去除率 - 压力敏感度（d 至少750（Å/ min / psi）。抛光同时加速从抛光垫从金属互连件移除突出的金属，提供提高突出金属的去除速率的第一压力; 并且其抑制了从抛光垫从金属互连件去除凹陷金属，从而提供减小凹陷金属去除的第二压力。

5. 发明申请

US20090215266A1 Polishing Copper-Containing patterned wafers 审中-公开
标题翻译：抛光含铜图案晶圆
公开(公告)号：US20090215266A1
公开(公告)日：2009-08-27
申请号：US12072015
申请日：2008-02-22
申请人： Terence M. Thomas , Hongyu Wang
发明人： Terence M. Thomas , Hongyu Wang
IPC分类号： H01L21/461
CPC分类号： H01L21/3212 , C09G1/02 , C09G1/04
摘要： An aspect of the invention provides a method for polishing a patterned semiconductor wafer containing a copper interconnect metal with a polishing pad. The method includes the following: a) providing an aqueous polishing solution, the polishing solution containing an benzotriazole (BTA) inhibitor and a copper complexing compound and water; b) polishing the patterned wafer with the aqueous polishing solution and the polishing pad in a manner that dissolves copper into Cu+1 ions, the Cu+1 ions and BTA inhibitor having a concentration where [BTA]*[Cu+1]> than Ksp for Cu-BTA precipitate if the aqueous solution did not contain the complexing compound; and c) oxidizing at least some of the copper ions to prevent the polishing from precipitating the Cu-BTA precipitate.
摘要翻译：本发明的一个方面提供了一种用于抛光含有铜互连金属的图案化半导体晶片与抛光垫的方法。该方法包括以下步骤：a）提供水性抛光液，含有苯并三唑（BTA）抑制剂和铜络合化合物和水的抛光溶液; b）以水溶性抛光溶液和抛光垫以铜溶解Cu + 1离子的方式抛光图案化晶片，Cu + 1离子和BTA抑制剂的浓度为[BTA] * [Cu + 1]> 如果水溶液不含络合化合物，则Cu-BTA的Ksp沉淀; 和c）氧化至少一些铜离子以防止抛光沉淀Cu-BTA沉淀物。

6. 发明申请

US20090215265A1 Low-stain polishing composition 有权
标题翻译：低污染抛光组合物
公开(公告)号：US20090215265A1
公开(公告)日：2009-08-27
申请号：US12071000
申请日：2008-02-22
申请人： Terence M. Thomas , Hongyu Wang
发明人： Terence M. Thomas , Hongyu Wang
IPC分类号： H01L21/304 , C09K13/00
CPC分类号： H01L21/3212 , C09G1/02 , C09G1/04 , C23F1/00 , C23F1/14 , C23F1/32 , H01L21/304 , H01L21/30625
摘要： The invention is an aqueous composition useful for chemical mechanical polishing of a patterned semiconductor wafer containing a copper interconnect metal. The aqueous composition includes an oxidizer, an inhibitor for the copper interconnect metal, 0.001 to 15 weight percent of a water soluble modified cellulose, non-saccaride water soluble polymer, 0 to 15 complexing agent for the copper interconnect metal, 0 to 15 weight percent phosphorus compound, 0.05 to 20 weight percent of an acid compound that is capable of complexing copper ions, and water; and the solution has an acidic pH.
摘要翻译：本发明是一种水性组合物，其用于含有铜互连金属的图案化半导体晶片的化学机械抛光。含水组合物包括氧化剂，铜互连金属的抑制剂，0.001〜15重量％的水溶性改性纤维素，非蟑螂水溶性聚合物，0〜15络合金属络合剂，0〜15重量％磷化合物，0.05〜20重量％的能够络合铜离子的酸性化合物和水; 并且溶液具有酸性pH。

7. 发明授权

US09633865B2 Low-stain polishing composition 有权
公开(公告)号：US09633865B2
公开(公告)日：2017-04-25
申请号：US12071000
申请日：2008-02-22
申请人： Terence M. Thomas , Hongyu Wang
发明人： Terence M. Thomas , Hongyu Wang
IPC分类号： C03C15/00 , C03C25/68 , H01L21/302 , H01L21/461 , C09K13/00 , C09K13/02 , H01L21/321 , C23F1/32 , C23F1/14 , C23F1/00 , H01L21/306 , H01L21/304 , C09G1/02 , C09G1/04
CPC分类号： H01L21/3212 , C09G1/02 , C09G1/04 , C23F1/00 , C23F1/14 , C23F1/32 , H01L21/304 , H01L21/30625
摘要： The invention is an aqueous composition useful for chemical mechanical polishing of a patterned semiconductor wafer containing a copper interconnect metal. The aqueous composition includes an oxidizer, an inhibitor for the copper interconnect metal, 0.001 to 15 weight percent of a water soluble modified cellulose, non-saccaride water soluble polymer, 0 to 15 complexing agent for the copper interconnect metal, 0 to 15 weight percent phosphorus compound, 0.05 to 20 weight percent of an acid compound that is capable of complexing copper ions, and water; and the solution has an acidic pH.

8. 发明授权

US07270762B2 Polishing compositions for noble metals 有权
标题翻译：贵金属抛光组合物
公开(公告)号：US07270762B2
公开(公告)日：2007-09-18
申请号：US10393071
申请日：2003-03-20
申请人： Hongyu Wang , Terence M. Thomas , Qianqiu Ye , Heinz F. Reinhardt , Vikas Sachan
发明人： Hongyu Wang , Terence M. Thomas , Qianqiu Ye , Heinz F. Reinhardt , Vikas Sachan
IPC分类号： H01L21/302
CPC分类号： H01L21/3212 , C09G1/02 , C23F3/06
摘要： The polishing composition of this invention is useful for chemical-mechanical polishing of substrates containing noble metals such as platinum and comprises up to about 50% by weight of a adjuvant wherein said adjuvant is s elected from a group consisting of a metal-anion compound, a metal-cation compound or mixtures thereof; abrasive particles at about 0.5% to about 55% by weight of the polishing composition; and water-soluble organic additives up to about 10% by weight of the polishing composition. The abrasive particles are selected from the group consisting of alumina, ceria, silica, diamond, germania, zirconia, silicon carbide, boron nitride, boron carbide or mixtures thereof. The organic additives generally improve dispersion of the abrasive particles and also enhance metal removal rates and selectivity for metal removal by stabilizing the pH of the polishing composition and suppressing the dielectric removal rate.
摘要翻译：本发明的抛光组合物可用于化学机械抛光含有贵金属如铂的底物，并包含至多约50重量％的佐剂，其中所述佐剂选自金属 - 阴离子化合物，金属阳离子化合物或其混合物; 磨料颗粒为抛光组合物重量的约0.5％至约55％; 和高达约10重量％的抛光组合物的水溶性有机添加剂。磨料颗粒选自氧化铝，二氧化铈，二氧化硅，金刚石，氧化锗，氧化锆，碳化硅，氮化硼，碳化硼或其混合物。有机添加剂通常改善磨料颗粒的分散性，并通过稳定抛光组合物的pH并抑制介电去除速率来提高金属去除速率和金属去除选择性。

9. 发明授权

US06971945B2 Multi-step polishing solution for chemical mechanical planarization 失效
标题翻译：用于化学机械平面化的多步抛光溶液
公开(公告)号：US06971945B2
公开(公告)日：2005-12-06
申请号：US10785362
申请日：2004-02-23
申请人： Zhendong Liu , John Quanci , Robert E. Schmidt , Terence M. Thomas
发明人： Zhendong Liu , John Quanci , Robert E. Schmidt , Terence M. Thomas
IPC分类号： B24B37/00 , B24B1/00 , B44C1/22 , C09K3/14 , C23F1/00 , H01L21/304
CPC分类号： C23F3/06 , C09K3/1463 , H01L21/3212 , H01L21/7684
摘要： The present invention provides a multi-step aqueous composition useful for polishing a tantalum barrier material and copper from a semiconductor wafer, comprising by weight percent 0.1 to 30 oxidizer, 0.01 to 3 inorganic salt or acid, 0.01 to 4 inhibitor, 0.1 to 30 abrasive, 0 to 15 complexing agent and balance water, wherein the aqueous composition has a pH between 1.5 to 6.
摘要翻译：本发明提供了一种用于从半导体晶片抛光钽阻挡材料和铜的多步水性组合物，其包含重量百分比为0.1至30的氧化剂，0.01至3种无机盐或酸，0.01至4种抑制剂，0.1至30种研磨剂 0〜15络合剂和余量水，其中，所述水性组合物的pH为1.5〜6。

10. 发明授权

US06616717B2 Composition and method for polishing in metal CMP 有权
标题翻译：金属CMP抛光的组成和方法
公开(公告)号：US06616717B2
公开(公告)日：2003-09-09
申请号：US09859147
申请日：2001-05-16
申请人： Vikas Sachan , Elizabeth A. (Kegerise) Langlois , Qianqiu (Christine) Ye , Keith G. Pierce , Craig D. Lack , Terence M. Thomas , Peter A. Burke , David Gettman , Sarah Lane
发明人： Vikas Sachan , Elizabeth A. (Kegerise) Langlois , Qianqiu (Christine) Ye , Keith G. Pierce , Craig D. Lack , Terence M. Thomas , Peter A. Burke , David Gettman , Sarah Lane
IPC分类号： C09G102
CPC分类号： H01L21/3212 , C09G1/02 , H01L21/31053
摘要： A composition is provided in the present invention for polishing a composite semiconductor structure containing a metal layer (such as tungsten, aluminum, or copper), a barrier layer (such as tantalum, tantalum nitride, titanium, or titanium nitride), and an insulating layer (such as SiO2). The composition comprises an aqueous medium, an oxidant, an organic polymer that attenuates removal of the oxide film. The composition may optionally comprise a complexing agent and/or a dispersant.
摘要翻译：在本发明中提供一种组合物，用于研磨包含金属层（例如钨，铝或铜），阻挡层（例如钽，氮化钽，钛或氮化钛）的绝缘体的复合半导体结构层（如SiO2）。组合物包含水性介质，氧化剂，有机聚合物，其减弱氧化膜的去除。组合物可任选地包含络合剂和/或分散剂。

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