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1. 发明申请

US20070279971A1 MODIFIED PSEUDO-SPIN VALVE (PSV) FOR MEMORY APPLICATIONS 审中-公开
标题翻译：改进的PSEUDO旋转阀（PSV）用于存储器应用
公开(公告)号：US20070279971A1
公开(公告)日：2007-12-06
申请号：US11535893
申请日：2006-09-27
申请人： Timothy Vogt , Romney Katti , Dan Schipper , Theodore Zhu , Anthony Arrott , Joel Drewes , Harry Liu , William Larson
发明人： Timothy Vogt , Romney Katti , Dan Schipper , Theodore Zhu , Anthony Arrott , Joel Drewes , Harry Liu , William Larson
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , H01L43/08
摘要： A pseudo-spin valve for memory applications, such as magnetoresistive random access memory (MRAM), and methods for fabricating the same, are disclosed. Advantageously, memory devices with the advantageous pseudo-spin valve configuration can be fabricated without cobalt-iron and without anti-ferromagnetic layers, thereby promoting switching repeatability.
摘要翻译：公开了一种用于存储器应用的伪自旋阀，例如磁阻随机存取存储器（MRAM）及其制造方法。有利的是，具有有利的伪自旋阀结构的存储器件可以不用钴铁制成而不具有反铁磁性层，从而提高了切换重复性。

2. 发明授权

US07029923B2 Method for manufacture of magneto-resistive bit structure 有权
标题翻译：磁阻位结构的制造方法
公开(公告)号：US07029923B2
公开(公告)日：2006-04-18
申请号：US10734663
申请日：2003-12-11
申请人： Harry Liu , William Larson , Lonny Berg , Theodore Zhu , Shaoping Li , Romney R. Katti , Yong Lu , Anthony Arrott
发明人： Harry Liu , William Larson , Lonny Berg , Theodore Zhu , Shaoping Li , Romney R. Katti , Yong Lu , Anthony Arrott
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , G11C11/15 , H01L43/08
摘要： A magnetic bit structure for a magneto-resistive memory is disclosed that has bit ends that are sufficiently large to accommodate a minimum size contact or via hole. By providing such an arrangement, the magnetic bit structure may be fabricated using conventional contact and/or via processing steps. As such, the cost of manufacturing the device may be reduced, and the overall achievable yield may be increased.
摘要翻译：公开了一种用于磁阻存储器的磁头结构，其具有足够大的位端以适应最小尺寸的接触或通孔。通过提供这种布置，可以使用常规的接触和/或通孔处理步骤来制造磁头结构。因此，可以降低制造装置的成本，并且可以提高总体可实现的产量。

3. 发明授权

US06872997B2 Method for manufacture of magneto-resistive bit structure 有权
标题翻译：磁阻位结构的制造方法
公开(公告)号：US06872997B2
公开(公告)日：2005-03-29
申请号：US10765546
申请日：2004-01-26
申请人： Harry Liu , William Larson , Lonny Berg , Theodore Zhu , Shaoping Li , Romney R. Katti , Yong Lu , Anthony Arrott
发明人： Harry Liu , William Larson , Lonny Berg , Theodore Zhu , Shaoping Li , Romney R. Katti , Yong Lu , Anthony Arrott
IPC分类号： H01L27/105 , G11C11/15 , H01L21/8246 , H01L43/08 , H01L43/12 , H01L31/119
CPC分类号： H01L43/12 , G11C11/15 , H01L43/08
摘要： A magnetic bit structure for a magneto-resistive memory is disclosed that has bit ends that are sufficiently large to accommodate a minimum size contact or via hole. By providing such an arrangement, the magnetic bit structure may be fabricated using conventional contact and/or via processing steps. As such, the cost of manufacturing the device may be reduced, and the overall achievable yield may be increased.
摘要翻译：公开了一种用于磁阻存储器的磁头结构，其具有足够大的位端以适应最小尺寸的接触或通孔。通过提供这种布置，可以使用常规的接触和/或通孔处理步骤来制造磁头结构。因此，可以降低制造装置的成本，并且可以提高总体可实现的产量。

4. 发明授权

US06717194B2 Magneto-resistive bit structure and method of manufacture therefor 有权
标题翻译：磁阻位结构及其制造方法
公开(公告)号：US06717194B2
公开(公告)日：2004-04-06
申请号：US09999684
申请日：2001-10-30
申请人： Harry Liu , William Larson , Lonny Berg , Theodore Zhu , Shaoping Li , Romney R. Katti , Yong Lu , Anthony Arrott
发明人： Harry Liu , William Larson , Lonny Berg , Theodore Zhu , Shaoping Li , Romney R. Katti , Yong Lu , Anthony Arrott
IPC分类号： H01L31119
CPC分类号： H01L43/12 , G11C11/15 , H01L43/08
摘要： A magnetic bit structure for a magneto-resistive memory is disclosed that has bit ends that are sufficiently large to accommodate a minimum size contact or via hole. By providing such an arrangement, the magnetic bit structure may be fabricated using conventional contact and/or via processing steps. As such, the cost of manufacturing the device may be reduced, and the overall achievable yield may be increased.
摘要翻译：公开了一种用于磁阻存储器的磁头结构，其具有足够大的位端以适应最小尺寸的接触或通孔。通过提供这种布置，可以使用常规的接触和/或通孔处理步骤来制造磁头结构。因此，可以降低制造装置的成本，并且可以提高总体可实现的产量。

5. 发明申请

US20110024803A1 SEMICONDUCTOR DEVICE WITH INTEGRATED CHANNEL STOP AND BODY CONTACT 失效
标题翻译：具有集成通道停止和身体接触的半导体器件
公开(公告)号：US20110024803A1
公开(公告)日：2011-02-03
申请号：US12512162
申请日：2009-07-30
申请人： William Larson , Gregory Michaelson
发明人： William Larson , Gregory Michaelson
IPC分类号： H01L29/06 , H01L29/78
CPC分类号： H01L29/78 , H01L21/761
摘要： A channel stop is provided for a semiconductor device that includes at least one active region. The channel stop is configured to surround the semiconductor device, to abut the at least one active region at a periphery of the semiconductor device, and to share an electrical connection with the at least one active region.
摘要翻译：为包括至少一个有源区域的半导体器件提供通道停止。通道挡块被配置为围绕半导体器件，以邻接半导体器件的周边处的至少一个有源区域，并且与该至少一个有源区域共享电连接。

6. 发明申请

US20050016046A1 Frame assembly for attachment to a commercially available picture frame 审中-公开
标题翻译：框架组件，用于连接到市售的相框
公开(公告)号：US20050016046A1
公开(公告)日：2005-01-27
申请号：US10625251
申请日：2003-07-23
申请人： William Larson
发明人： William Larson
IPC分类号： A47G1/06
CPC分类号： A47G1/06 , A47G2001/0677
摘要： The present invention provides frame assembly devices for attachment to a commercially available picture frame that allows for the quick and easy insertion or removal of an item of display in the picture frame. The present invention also provides a method for adapting an assembled commercially available picture frame to allow display materials to be quickly and easily inserted and removed from the picture frame.
摘要翻译：本发明提供了用于连接到市售相框的框架组装装置，其允许快速且容易地插入或移除相框中的显示项目。本发明还提供了一种用于调整组装的市售照相框以允许快速且容易地从相框中插入和移除显示材料的方法。

7. 发明申请

US20130299911A1 SEMICONDUCTOR DEVICE ISOLATION USING AN ALIGNED DIFFUSION AND POLYSILICON FIELD PLATE 有权
标题翻译：使用对准扩散和多晶硅场板的半导体器件隔离
公开(公告)号：US20130299911A1
公开(公告)日：2013-11-14
申请号：US13469917
申请日：2012-05-11
申请人： William Larson
发明人： William Larson
IPC分类号： H01L27/088
CPC分类号： H01L27/088 , H01L21/765 , H01L21/823481
摘要： An isolation structure prevents inter-device and intra-device leakage in first and second adjacent semiconductor devices in a substrate. The first and second semiconductor devices each include a gate region and at least one active region. A first channel stop region is configured to surround the first semiconductor device. A second channel stop region is configured to surround the second semiconductor device. A first field plate is located above at least part of the first channel stop region, and overlaps the gate region of the first semiconductor device in a first overlap region. A second field plate is located above at least part of the second channel stop region, and overlaps the gate region of the second semiconductor device in a second overlap region.
摘要翻译：隔离结构防止衬底中的第一和第二相邻半导体器件中的器件间和器件内泄漏。第一和第二半导体器件各自包括栅极区域和至少一个有源区域。第一通道停止区域被配置为围绕第一半导体器件。第二通道停止区域被配置为围绕第二半导体器件。第一场板位于第一通道停止区域的至少一部分上方，并且在第一重叠区域中与第一半导体器件的栅极区域重叠。第二场板位于第二通道停止区域的至少一部分上方，并且在第二重叠区域中与第二半导体器件的栅极区域重叠。

8. 发明授权

US08536659B2 Semiconductor device with integrated channel stop and body contact 失效
标题翻译：具有集成通道停止和机身接触的半导体器件
公开(公告)号：US08536659B2
公开(公告)日：2013-09-17
申请号：US12512162
申请日：2009-07-30
申请人： William Larson , Gregory Michaelson
发明人： William Larson , Gregory Michaelson
IPC分类号： H01L29/772
CPC分类号： H01L29/78 , H01L21/761
摘要： A channel stop is provided for a semiconductor device that includes at least one active region. The channel stop is configured to surround the semiconductor device, to abut the at least one active region at a periphery of the semiconductor device, and to share an electrical connection with the at least one active region.
摘要翻译：为包括至少一个有源区域的半导体器件提供通道停止。通道挡块被配置为围绕半导体器件，以邻接半导体器件的周边处的至少一个有源区域，并且与该至少一个有源区域共享电连接。

9. 发明授权

US09818742B2 Semiconductor device isolation using an aligned diffusion and polysilicon field plate 有权
公开(公告)号：US09818742B2
公开(公告)日：2017-11-14
申请号：US13469917
申请日：2012-05-11
申请人： William Larson
发明人： William Larson
IPC分类号： H01L27/088 , H01L21/761 , H01L21/8234 , H01L21/765
CPC分类号： H01L27/088 , H01L21/765 , H01L21/823481
摘要： An isolation structure prevents inter-device and intra-device leakage in first and second adjacent semiconductor devices in a substrate. The first and second semiconductor devices each include a gate region and at least one active region. A first channel stop region is configured to surround the first semiconductor device. A second channel stop region is configured to surround the second semiconductor device. A first field plate is located above at least part of the first channel stop region, and overlaps the gate region of the first semiconductor device in a first overlap region. A second field plate is located above at least part of the second channel stop region, and overlaps the gate region of the second semiconductor device in a second overlap region.

10. 发明授权

US6120205A Wall and ceiling scraping device with collection pan 失效
标题翻译：墙壁和天花板刮水装置与收集盘
公开(公告)号：US6120205A
公开(公告)日：2000-09-19
申请号：US398851
申请日：1999-09-17
申请人： William Larson
发明人： William Larson
IPC分类号： A47L13/03 , A47L13/08
CPC分类号： A47L13/03 , A47L13/08 , Y10T156/1972
摘要： A wall and ceiling scraping device with collection pan including a scraping blade having a generally rectangular configuration. The scraping blade is defined by a planar upper surface, a planar lower surface, a leading edge, a trailing edge, and opposed side edges. A collection pan is secured to the trailing edge of the scraping blade. A hose coupler is secured to the upper surface of the scraping blade adjacent to the trailing edge thereof. The hose coupler includes a planar plate secured to the scraping blade. The planar plate has a cylindrical tube extending outwardly therefrom in an angular orientation. The tube has an open outer end with internal threads for coupling with a standard water hose. An inner end of the tube has a pair of spray nozzles disposed therein directed towards the leading edge of the scraping blade.
摘要翻译：一种具有收集盘的墙壁和天花板刮板装置，包括具有大致矩形构造的刮刀。刮刀由平面上表面，平面下表面，前缘，后缘和相对的侧边限定。收集盘固定在刮刀的后缘。软管接头被固定到刮刀的与其后缘相邻的上表面。软管接头包括固定在刮刀上的平板。平板有一个圆柱形管子，以一个角度方向向外延伸。管具有开口的外端，内部带有用于与标准水软管连接的内螺纹。管的内端具有一对设置在其中的喷嘴，其指向刮刀的前缘。

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