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1. 发明授权

US06498385B1 Post-fuse blow corrosion prevention structure for copper fuses 有权
标题翻译：铜熔丝保险丝熔断防腐结构
公开(公告)号：US06498385B1
公开(公告)日：2002-12-24
申请号：US09388314
申请日：1999-09-01
申请人： Timothy H. Daubenspeck , Daniel C. Edelstein , Robert M. Geffken , William T. Motsiff , Anthony K. Stamper , Steven H. Voldman
发明人： Timothy H. Daubenspeck , Daniel C. Edelstein , Robert M. Geffken , William T. Motsiff , Anthony K. Stamper , Steven H. Voldman
IPC分类号： H01L2900
CPC分类号： H01L21/76877 , H01L21/76807 , H01L21/76843 , H01L23/5258 , H01L28/20 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A structure and method of fabricating a semiconductor corrosion resistant metal fuse line including a refractory liner which can also act as a resistor is disclosed. Fabrication is accomplished using damascene process. The metal structure can be formed on a semiconductor substrate including a first portion including a first layer and a second layer, the first layer having higher resistivity than the second layer, the second layer having horizontal and vertical surfaces that are in contact with the first layer in the first portion, and a second portion coupled to the first portion, the second portion being comprised of the first layer, the first layer not being in contact with the horizontal and vertical surfaces of the second layer in the second portion. The metal structure can be used as a corrosion resistant fuse. The metal structure can also be used as a resistive element. The high voltage tolerant resistor structure allows for usage in mixed-voltage, and mixed signal and analog/digital applications. The resistor element has low capacitance, low skin effect, high linearity, a high melting temperature, and a high critical current to failure. The resistor structure can be formed on the walls of a dielectric trough. The structure can be applied to circuit applications such as an ESD network, an RC-coupled MOSFET, a resistor ballasted MOSFET and others. The resistors can be in series with the MOSFET or other structures.
摘要翻译：公开了一种制造半导体耐腐蚀金属熔丝线的结构和方法，其包括也可以用作电阻器的耐火衬垫。使用镶嵌工艺完成制作。金属结构可以形成在包括包括第一层和第二层的第一部分的半导体衬底上，第一层具有比第二层更高的电阻率，第二层具有与第一层接触的水平和垂直表面在第一部分中，以及第二部分，其联接到第一部分，第二部分由第一层组成，第一层不与第二部分中的第二层的水平和垂直表面接触。金属结构可用作耐腐蚀保险丝。金属结构也可以用作电阻元件。高耐压电阻器结构允许在混合电压，混合信号和模拟/数字应用中使用。电阻元件具有低电容，低效果，高线性度，高熔点温度和高临界电流故障。电阻器结构可以形成在电介质槽的壁上。该结构可以应用于诸如ESD网络，RC耦合MOSFET，电阻器镇流MOSFET等电路应用。电阻可以与MOSFET或其他结构串联。

2. 发明授权

US06746947B2 Post-fuse blow corrosion prevention structure for copper fuses 有权
标题翻译：铜熔丝保险丝熔断防腐结构
公开(公告)号：US06746947B2
公开(公告)日：2004-06-08
申请号：US10254277
申请日：2002-09-25
申请人： Timothy H. Daubenspeck , Daniel C. Edelstein , Robert M. Geffken , William T. Motsiff , Anthony K. Stamper , Steven H. Voldman
发明人： Timothy H. Daubenspeck , Daniel C. Edelstein , Robert M. Geffken , William T. Motsiff , Anthony K. Stamper , Steven H. Voldman
IPC分类号： H01L2144
CPC分类号： H01L21/76877 , H01L21/76807 , H01L21/76843 , H01L23/5258 , H01L28/20 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A structure and method of fabricating a semiconductor corrosion resistant metal fuse line including a refractory liner which can also act as a resistor is disclosed. Fabrication is accomplished using damascene process. The metal structure can be formed on a semiconductor substrate including a first portion including a first layer and a second layer, the first layer having higher resistivity than the second layer, the second layer having horizontal and vertical surfaces that are in contact with the first layer in the first portion, and a second portion coupled to the first portion, the second portion being comprised of the first layer, the first layer not being in contact with the horizontal and vertical surfaces of the second layer in the second portion. The metal structure can be used as a corrosion resistant fuse. The metal structure can also be used as a resistive element. The high voltage tolerant resistor structure allows for usage in mixed-voltage, and mixed signal and analog/digital applications. The resistor element has low capacitance, low skin effect, high linearity, a high melting temperature, and a high critical current to failure. The resistor structure can be formed on the walls of a dielectric trough. The structure can be applied to circuit applications such as an ESD network, an RC-coupled MOSFET, a resistor ballasted MOSFET and others. The resistors can be in series with the MOSFET or other structures.
摘要翻译：公开了一种制造半导体耐腐蚀金属熔丝线的结构和方法，其包括也可以用作电阻器的耐火衬垫。使用镶嵌工艺完成制作。金属结构可以形成在包括包括第一层和第二层的第一部分的半导体衬底上，第一层具有比第二层更高的电阻率，第二层具有与第一层接触的水平和垂直表面在第一部分中，以及第二部分，其联接到第一部分，第二部分由第一层组成，第一层不与第二部分中的第二层的水平和垂直表面接触。金属结构可用作耐腐蚀保险丝。金属结构也可以用作电阻元件。高耐压电阻器结构允许在混合电压，混合信号和模拟/数字应用中使用。电阻元件具有低电容，低效果，高线性度，高熔点温度和高临界电流故障。电阻器结构可以形成在电介质槽的壁上。该结构可以应用于诸如ESD网络，RC耦合MOSFET，电阻器镇流MOSFET等电路应用。电阻可以与MOSFET或其他结构串联。

3. 发明授权

US06991971B2 Method for fabricating a triple damascene fuse 失效
标题翻译：三镶嵌保险丝的制造方法
公开(公告)号：US06991971B2
公开(公告)日：2006-01-31
申请号：US10675177
申请日：2003-09-30
申请人： Timothy H. Daubenspeck , Thomas L. McDevitt , William T. Motsiff , Anthony K. Stamper
发明人： Timothy H. Daubenspeck , Thomas L. McDevitt , William T. Motsiff , Anthony K. Stamper
IPC分类号： H01L21/82
CPC分类号： H01L23/53295 , H01L23/5256 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A method for fabricating a fuse for a semiconductor device. The method including: providing a substrate; forming a first dielectric layer on a top surface of said substrate; forming a dielectric mandrel on a top surface of said first dielectric layer; forming a second dielectric layer on top of said mandrel and a top surface of said first dielectric layer forming contact openings down to said substrate in said first and second dielectric layers on opposite sides of said mandrel, said contacts spaced away from said mandrel and leaving portions of said second dielectric layer between said mandrel and said contacts; removing said second dielectric layer from over said mandrel between said contact openings to form a trough; and filling said trough and contact openings with a conductor.
摘要翻译：一种制造用于半导体器件的熔丝的方法。该方法包括：提供衬底; 在所述衬底的顶表面上形成第一电介质层; 在所述第一介电层的顶表面上形成介电心轴; 在所述心轴的顶部上形成第二电介质层，并且所述第一电介质层的顶表面在所述心轴的相对侧上的所述第一和第二介电层中向下形成接触开口，所述触头与所述心轴间隔开并留下部分所述第二电介质层位于所述心轴和所述触头之间; 从所述心轴上的所述接触开口之间移除所述第二电介质层以形成槽; 并用导体填充所述槽和接触开口。

4. 发明授权

US06667533B2 Triple damascene fuse 失效
公开(公告)号：US06667533B2
公开(公告)日：2003-12-23
申请号：US09684000
申请日：2002-03-11
申请人： Timothy H. Daubenspeck , Thomas L. McDevitt , William T. Motsiff , Anthony K. Stamper
发明人： Timothy H. Daubenspeck , Thomas L. McDevitt , William T. Motsiff , Anthony K. Stamper
IPC分类号： H01L2900
CPC分类号： H01L23/53295 , H01L23/5256 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is a conductive fuse for a semiconductor device, comprising: a pair of contact portions integrally connected to a fusible portion by connecting portions; the contact portions thicker than the connecting portions and the connecting portions thicker than the fusible portion; a first dielectric under the connecting portions and the fusible portion and extending between the pair of contact portions; and a second dielectric between the first dielectric and the fusible portion, the second dielectric extending between the connecting portions and defining the length of the fusible portion.

5. 发明授权

US06982227B2 Single and multilevel rework 失效
标题翻译：单层和多层返工
公开(公告)号：US06982227B2
公开(公告)日：2006-01-03
申请号：US10687294
申请日：2003-10-16
申请人： Edward C. Cooney, III , Robert M. Geffken , Vincent J. McGahay , William T. Motsiff , Mark P. Murray , Amanda L. Piper , Anthony K. Stamper , David C. Thomas , Christy S. Tyberg , Elizabeth T. Webster
发明人： Edward C. Cooney, III , Robert M. Geffken , Vincent J. McGahay , William T. Motsiff , Mark P. Murray , Amanda L. Piper , Anthony K. Stamper , David C. Thomas , Christy S. Tyberg , Elizabeth T. Webster
IPC分类号： H01L21/302
CPC分类号： H01L21/76808 , H01L21/76801 , H01L21/76807 , H01L21/76892 , H01L23/525 , H01L23/5329 , H01L23/53295 , H01L2221/1031 , H01L2924/0002 , H01L2924/00
摘要： A method of reworking BEOL (back end of a processing line) metallization levels of damascene metallurgy comprises forming a plurality of BEOL metallization levels over a substrate, forming line and via portions in the BEOL metallization levels, selectively removing at least one of the BEOL metallization levels to expose the line and via portions, and replacing the removed BEOL metallization levels with at least one new BEOL metallization level, wherein the BEOL metallization levels comprise a first dielectric layer and a second dielectric layer, and wherein the first dielectric layer comprising a lower dielectric constant material than the second dielectric layer.
摘要翻译：一种重新加工BEOL（处理线的后端）金刚石冶金的金属化水平的方法包括在衬底上形成多个BEOL金属化水平，在BEOL金属化水平中形成线和通孔部分，选择性地去除BEOL金属化中的至少一个以暴露线路和通孔部分，并且用至少一个新的BEOL金属化水平替换去除的BEOL金属化水平，其中BEOL金属化水平包括第一介电层和第二介电层，并且其中第一介电层包括下部介电常数材料比第二介电层。

6. 发明授权

US06674168B1 Single and multilevel rework 失效
标题翻译：单层和多层返工
公开(公告)号：US06674168B1
公开(公告)日：2004-01-06
申请号：US10248452
申请日：2003-01-21
申请人： Edward C. Cooney, III , Robert M Geffken , Vincent J McGahay , William T. Motsiff , Mark P. Murray , Amanda L. Piper , Anthony K. Stamper , David C. Thomas , Christy S. Tyberg , Elizabeth T. Webster
发明人： Edward C. Cooney, III , Robert M Geffken , Vincent J McGahay , William T. Motsiff , Mark P. Murray , Amanda L. Piper , Anthony K. Stamper , David C. Thomas , Christy S. Tyberg , Elizabeth T. Webster
IPC分类号： H01L2100
CPC分类号： H01L21/76808 , H01L21/76801 , H01L21/76807 , H01L21/76892 , H01L23/525 , H01L23/5329 , H01L23/53295 , H01L2221/1031 , H01L2924/0002 , H01L2924/00
摘要： A method of reworking BEOL (back end of a processing line) metallization levels of damascene metallurgy comprises forming a plurality of BEOL metallization levels over a substrate, forming line and via portions in the BEOL metallization levels, selectively removing at least one of the BEOL metallization levels to expose the line and via portions, and replacing the removed BEOL metallization levels with at least one new BEOL metallization level, wherein the BEOL metallization levels comprise a first dielectric layer and a second dielectric layer, and wherein the first dielectric layer comprising a lower dielectric constant material than the second dielectric layer.
摘要翻译：一种重新加工BEOL（处理线的后端）金刚石冶金的金属化水平的方法包括在衬底上形成多个BEOL金属化水平，在BEOL金属化水平中形成线和通孔部分，选择性地去除BEOL金属化中的至少一个以暴露线路和通孔部分，并且用至少一个新的BEOL金属化水平替换去除的BEOL金属化水平，其中BEOL金属化水平包括第一介电层和第二介电层，并且其中第一介电层包括下部介电常数材料比第二介电层。

7. 发明授权

US06835973B2 Antifuse for use with low &kgr; dielectric foam insulators 失效
标题翻译：用于低kappa电介质泡沫绝缘子的防腐剂
公开(公告)号：US06835973B2
公开(公告)日：2004-12-28
申请号：US10159573
申请日：2002-05-31
申请人： Timothy H. Daubenspeck , William A. Klaasen , William T. Motsiff , Rosemary A. Previti-Kelly , Jed H. Rankin
发明人： Timothy H. Daubenspeck , William A. Klaasen , William T. Motsiff , Rosemary A. Previti-Kelly , Jed H. Rankin
IPC分类号： H01L2710
CPC分类号： H01L23/5254 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A fusible link for a semiconductor device comprises an insulating substrate and a conductive line pair on the surface of the insulating substrate, with the conductive line pair having spaced ends. A polymer is disposed over the insulating substrate and between the conductive line pair ends. The polymer is capable of being changed from a non-conductive to a conductive state upon exposure to an energy beam. Preferably, the polymer comprises a polyimide, more preferably, a polymer/onium salt mixture, most preferably, a polyaniline polymer doped with a triphenylsufonium salt. The link may further comprise a low &kgr; nanopore/nanofoam dielectric material adjacent the conductive line ends.
摘要翻译：用于半导体器件的可熔连接件包括在绝缘衬底的表面上的绝缘衬底和导电线对，导电线对具有间隔开的端部。聚合物设置在绝缘基板之上和导线对端之间。聚合物能够在暴露于能量束时从非导电状态改变为导电状态。优选地，聚合物包括聚酰亚胺，更优选聚合物/鎓盐混合物，最优选掺杂有三苯基鎓盐的聚苯胺聚合物。该连接可以进一步包括邻近导线末端的低kappa纳米孔/纳米电流介电材料。

8. 发明授权

US06827868B2 Thinning of fuse passivation after C4 formation 失效
公开(公告)号：US06827868B2
公开(公告)日：2004-12-07
申请号：US10065885
申请日：2002-11-27
申请人： Timothy H. Daubenspeck , Jeffrey P. Gambino , William T. Motsiff
发明人： Timothy H. Daubenspeck , Jeffrey P. Gambino , William T. Motsiff
IPC分类号： H01L2182
CPC分类号： H01L23/5258 , H01L2224/05001 , H01L2224/05022 , H01L2224/05026 , H01L2224/05027 , H01L2224/05184 , H01L2224/05572 , H01L2224/056 , H01L2224/11 , H01L2924/0002 , H01L2924/00 , H01L2924/00014 , H01L2224/05124 , H01L2224/05147 , H01L2224/05166
摘要： A method of forming a fuse structure in which passivating material over the fuse has a controlled, substantially uniform thickness that is provided after C4 metallurgy formation. A laser fuse deletion process for the fuse formed by this method is also disclosed.

9. 发明授权

US06492207B2 Method for making a pedestal fuse 失效
标题翻译：制作基座保险丝的方法
公开(公告)号：US06492207B2
公开(公告)日：2002-12-10
申请号：US09844125
申请日：2001-04-26
申请人： Dennis P. Bouldin , Timothy H. Daubenspeck , William T. Motsiff
发明人： Dennis P. Bouldin , Timothy H. Daubenspeck , William T. Motsiff
IPC分类号： H01L2177
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： A structure and method of fabricating a metallization fuse line is disclosed. The structure can be formed on a semiconductor substrate, including an insulator structure formed on the substrate, the insulator structure having an upper layer and a lower layer, the upper being thinner than the lower, the insulator structure having a plurality of openings of varying depth, and a metal structure inlaid in the insulator structure, the metal structure having first and second portions and a third portion there between that is substantially more resistive than the first and second portions, the third portion having a thickness substantially- similar to the thickness of the upper layer of the insulator structure. The upper layer includes a nitride, the lower layer includes an oxide and the metal structure includes copper. The fuse structure allows formation of “easy to laser delete” thin metal fuses within segments of thick metal lines. This applies to wiring layers formed from “high” melting temperature metals and those defined using a damascene process. For example, copper back end of line (Cu BEOL) damascene wiring, as used with CMOS can use the invention. The technique achieves high yield fusing for technologies that use thick wiring layers. The structure separates the thickness of the fuse segment from the remainder of the wiring line. The structure can be used with very thick, e.g., >1.2&mgr; wiring and very thin, e.g.,
摘要翻译：公开了一种制造金属化熔丝线的结构和方法。该结构可以形成在半导体衬底上，包括形成在衬底上的绝缘体结构，绝缘体结构具有上层和下层，上部比下部更薄，绝缘体结构具有多个不同深度的开口以及镶嵌在绝缘体结构中的金属结构，具有第一和第二部分的金属结构和在其之间的第三部分基本上比第一和第二部分更具有阻力，第三部分的厚度基本上类似于绝缘体结构的上层。上层包括氮化物，下层包括氧化物，金属结构包括铜。熔丝结构允许在厚金属线段内形成“易于激光删除”的薄金属保险丝。这适用于由“高”熔融金属形成的布线层和使用镶嵌工艺定义的布线层。例如，与CMOS一起使用的铜后端（Cu BEOL）镶嵌布线可以使用本发明。该技术实现了使用厚布线层的技术的高产率熔合。该结构将熔丝段的厚度与布线的其余部分分开。该结构可以使用非常厚的例如>1.2μm的布线和非常薄的例如<0.5mu的熔丝。

10. 发明授权

US06261873B1 Pedestal fuse 失效
标题翻译：基座保险丝
公开(公告)号：US06261873B1
公开(公告)日：2001-07-17
申请号：US09303355
申请日：1999-04-29
申请人： Dennis P. Bouldin , Timothy H. Daubenspeck , William T. Motsiff
发明人： Dennis P. Bouldin , Timothy H. Daubenspeck , William T. Motsiff
IPC分类号： H01L2182
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： A structure and method of fabricating a metallization fuse line is disclosed. The structure can be formed on a semiconductor substrate, including an insulator structure formed on the substrate, the insulator structure having an upper layer and a lower layer, the upper being thinner than the lower, the insulator structure having a plurality of openings of varying depth, and a metal structure inlaid in the insulator structure, the metal structure having first and second portions and a third portion there between that is substantially more resistive than the first and second portions, the third portion having a thickness substantially similar to the thickness of the upper layer of the insulator structure. The upper layer includes a nitride, the lower layer includes an oxide and the metal structure includes copper. The fuse structure allows formation of “easy to laser delete” thin metal fuses within segments of thick metal lines. This applies to wiring layers formed from “high” melting temperature metals and those defined using a damascene process. For example, copper back end of line (Cu BEOL) damascene wiring, as used with CMOS can use the invention. The technique achieves high yield fusing for technologies that use thick wiring layers. The structure separates the thickness of the fuse segment from the remainder of the wiring line. The structure can be used with very thick, e.g., >1.2&mgr; wiring and very thin, e.g.,
摘要翻译：公开了一种制造金属化熔丝线的结构和方法。该结构可以形成在半导体衬底上，包括形成在衬底上的绝缘体结构，绝缘体结构具有上层和下层，上部比下部更薄，绝缘体结构具有多个不同深度的开口以及镶嵌在绝缘体结构中的金属结构，具有第一和第二部分的金属结构和在其之间的第三部分比第一和第二部分具有更大的阻力，第三部分的厚度基本上类似于上层绝缘体结构。上层包括氮化物，下层包括氧化物，金属结构包括铜。熔丝结构允许在厚金属线段内形成“易于激光删除”的薄金属保险丝。这适用于由“高”熔融金属形成的布线层和使用镶嵌工艺定义的布线层。例如，与CMOS一起使用的铜后端（Cu BEOL）镶嵌布线可以使用本发明。该技术实现了使用厚布线层的技术的高产率熔合。该结构将熔丝段的厚度与布线的其余部分分开。该结构可以使用非常厚的例如>1.2μm的布线和非常薄的例如<0.5mu的熔丝。

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