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1. 发明申请

US20050085092A1 Multi-layer dielectric containing diffusion barrier material 有权
标题翻译：多层电介质含有扩散阻挡材料
公开(公告)号：US20050085092A1
公开(公告)日：2005-04-21
申请号：US10687271
申请日：2003-10-16
申请人： Olubunmi Adetutu , Tien Luo , Hsing Tseng
发明人： Olubunmi Adetutu , Tien Luo , Hsing Tseng
IPC分类号： H01L21/28 , H01L21/469 , H01L29/51
CPC分类号： H01L21/28202 , H01L29/513 , H01L29/518
摘要： A method for forming a dielectric is disclosed. The method comprises forming a first dielectric layer over semiconductor material. A diffusion barrier material is introduced into the first dielectric layer. Lastly, a second dielectric layer is formed over the first dielectric layer after the introducing.
摘要翻译：公开了形成电介质的方法。该方法包括在半导体材料上形成第一介电层。扩散阻挡材料被引入到第一介电层中。最后，在引入之后，在第一电介质层上形成第二电介质层。

2. 发明申请

US20060194423A1 Method of making a nitrided gate dielectric 失效
标题翻译：制造氮化栅极电介质的方法
公开(公告)号：US20060194423A1
公开(公告)日：2006-08-31
申请号：US11067257
申请日：2005-02-25
申请人： Sangwoo Lim , Paul Grudowski , Tien Luo , Olubunmi Adetutu , Hsing Tseng
发明人： Sangwoo Lim , Paul Grudowski , Tien Luo , Olubunmi Adetutu , Hsing Tseng
IPC分类号： H01L21/3205 , H01L21/31 , H01L21/336
CPC分类号： H01L21/02329 , H01L21/02181 , H01L21/0234 , H01L21/28185 , H01L21/28202 , H01L21/3141 , H01L21/3144 , H01L21/3185 , H01L29/4908 , H01L29/511 , H01L29/6659 , H01L29/7833
摘要： A gate dielectric is treated with a nitridation step and an anneal. After this, an additional nitridation step and anneal is performed. The second nitridation and anneal results in an improvement in the relationship between gate leakage current density and current drive of the transistors that are ultimately formed.
摘要翻译：用氮化步骤和退火处理栅极电介质。之后，进行另外的氮化步骤和退火。第二次氮化和退火导致栅极漏电流密度与最终形成的晶体管的电流驱动之间的关系得到改善。

3. 发明申请

US20060084217A1 Plasma impurification of a metal gate in a semiconductor fabrication process 审中-公开
标题翻译：半导体制造工艺中的金属栅极的等离子体杂质化
公开(公告)号：US20060084217A1
公开(公告)日：2006-04-20
申请号：US10969486
申请日：2004-10-20
申请人： Tien Luo , Olubunmi Adetutu , Hsing Tseng
发明人： Tien Luo , Olubunmi Adetutu , Hsing Tseng
IPC分类号： H01L21/4763
CPC分类号： H01L21/76888 , H01L21/28088 , H01L21/28176 , H01L21/823842 , H01L29/4966 , H01L29/517 , H01L29/518 , H01L29/78
摘要： A semiconductor fabrication includes forming a gate dielectric overlying a semiconductor substrate and depositing a metal gate film overlying the gate dielectric. Following deposition of the metal gate film, nitrogen, carbon, and/or oxygen is introduced into the metal gate film by exposing the metal gate film to a nitrogen, carbon, and/or oxygen bearing plasma. Thereafter, the nitrogenated/oxygenated/carbonated metal gate film is patterned to form a transistor gate electrode. Depositing the metal gate film is preferably done with a low energy process such as atomic layer deposition (ALD) or metal organic chemical vapor deposition (MOCVD) to reduce damage to the underlying gate dielectric. The metal gate film for NMOS devices is preferably a compound of nitrogen and Ti, W, or Ta. A second metal gate film may be used for PMOS devices. This second metal gate film is preferably a compound of oxygen and Ir, Ru, Mo, or Re.
摘要翻译：半导体制造包括形成覆盖在半导体衬底上的栅极电介质并沉积覆盖栅极电介质的金属栅极膜。在金属栅极膜沉积之后，通过将金属栅极膜暴露于氮，碳和/或含氧等离子体，将氮，碳和/或氧引入金属栅极膜。此后，对氮化/氧化/碳酸化的金属栅极膜进行构图以形成晶体管栅电极。优选地，通过诸如原子层沉积（ALD）或金属有机化学气相沉积（MOCVD）的低能量过程来沉积金属栅极膜以减少对下面的栅极电介质的损伤。用于NMOS器件的金属栅极膜优选为氮和Ti，W或Ta的化合物。 PMOS器件可以使用第二金属栅极膜。该第二金属栅极膜优选为氧和Ir，Ru，Mo或Re的化合物。

4. 发明申请

US20070069311A1 Electronic device with a gate electrode having at least two portions and a process for forming the electronic device 有权
标题翻译：具有至少两个部分的栅电极的电子器件和用于形成电子器件的工艺
公开(公告)号：US20070069311A1
公开(公告)日：2007-03-29
申请号：US11237346
申请日：2005-09-27
申请人： Olubunmi Adetutu , Tien Luo , Narayanan Ramani
发明人： Olubunmi Adetutu , Tien Luo , Narayanan Ramani
IPC分类号： H01L29/76
CPC分类号： H01L29/4966 , H01L21/28088 , H01L21/28194 , H01L21/82345 , H01L21/823842 , H01L29/517 , H01L29/518 , H01L29/7833
摘要： A transistor structure of an electronic device can include a gate dielectric layer and a gate electrode. The gate electrode can have a surface portion between the gate dielectric layer and the rest of the gate electrode. The surface portion can be formed such that another portion of the gate electrode primarily sets the effective work function in the finished transistor structure.
摘要翻译：电子器件的晶体管结构可以包括栅极介电层和栅电极。栅极电极可以在栅极电介质层和栅电极的其余部分之间具有表面部分。表面部分可以形成为使得栅电极的另一部分主要在最终晶体管结构中设置有效功函数。

5. 发明申请

US20070190711A1 Semiconductor device and method for incorporating a halogen in a dielectric 审中-公开
标题翻译：用于在电介质中掺入卤素的半导体器件和方法
公开(公告)号：US20070190711A1
公开(公告)日：2007-08-16
申请号：US11351517
申请日：2006-02-10
申请人： Tien Luo , Olubunmi Adetutu , Eric Luckowski , Narayanan Ramani
发明人： Tien Luo , Olubunmi Adetutu , Eric Luckowski , Narayanan Ramani
IPC分类号： H01L21/8234 , H01L21/336 , H01L21/3205
CPC分类号： H01L21/28185 , H01L21/28202 , H01L29/4966 , H01L29/51 , H01L29/518 , H01L29/6659 , H01L29/7833
摘要： A method of forming a semiconductor device, the method includes forming a gate dielectric over the semiconductor substrate, exposing the gate dielectric to a halogen, and incorporating the halogen into the gate dielectric. In one embodiment, the halogen is fluorine. In one embodiment, the gate dielectric is also exposed to nitrogen and the nitrogen is incorporated into the gate dielectric. In one embodiment, the gate dielectric is a metal oxide.
摘要翻译：一种形成半导体器件的方法，所述方法包括在半导体衬底上形成栅极电介质，将栅极电介质暴露于卤素，并将卤素并入栅极电介质中。在一个实施方案中，卤素是氟。在一个实施例中，栅极电介质也暴露于氮气，并且氮被并入到栅极电介质中。在一个实施例中，栅极电介质是金属氧化物。

6. 发明申请

US20070202708A1 Method for forming a deposited oxide layer 有权
标题翻译：形成沉积氧化物层的方法
公开(公告)号：US20070202708A1
公开(公告)日：2007-08-30
申请号：US11364128
申请日：2006-02-28
申请人： Tien Luo , Rajesh Rao
发明人： Tien Luo , Rajesh Rao
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/28282 , B82Y10/00 , H01L21/02164 , H01L21/02271 , H01L21/02304 , H01L21/02337 , H01L21/31612 , H01L29/42332 , H01L29/7883 , H01L29/7885
摘要： An insulating layer formed by deposition is annealed in the presence of radical oxygen to reduce bond defects. A substrate is provided. An oxide layer is deposited overlying the substrate. The oxide layer has a plurality of bond defects. The oxide layer is annealed in the presence of radical oxygen to modify a substantial portion of the plurality of bond defects by using oxygen atoms. The anneal, in one form, is an in-situ steam generation (ISSG) anneal. In one form, the insulating layer overlies a layer of charge storage material, such as nanoclusters, that form a gate structure of a semiconductor storage device. The ISSG anneal repairs bond defects by oxidizing defective silicon bonds in the oxide layer when the oxide layer is silicon dioxide.
摘要翻译：通过沉积形成的绝缘层在自由基氧的存在下退火以减少键合缺陷。提供基板。沉积在衬底上的氧化物层。氧化物层具有多个键合缺陷。氧化层在自由基氧的存在下进行退火，通过使用氧原子来修饰多个键缺陷的大部分。一种形式的退火是原位蒸汽发生（ISSG）退火。在一种形式中，绝缘层覆盖形成半导体存储装置的栅极结构的诸如纳米团簇的电荷存储材料层。当氧化物层是二氧化硅时，ISSG退火通过氧化氧化物层中的有缺陷的硅键来修复接合缺陷。

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