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1. 发明授权

US08357559B2 Method of making sensor platform using a non-horizontally oriented nanotube element 有权
标题翻译：使用非水平取向的纳米管元件制造传感器平台的方法
公开(公告)号：US08357559B2
公开(公告)日：2013-01-22
申请号：US12469402
申请日：2009-05-20
申请人： Brent M. Segal , Thomas Rueckes , Bernhard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
发明人： Brent M. Segal , Thomas Rueckes , Bernhard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
IPC分类号： H01L21/00
CPC分类号： G01N27/4146 , B82Y15/00 , G11C13/025 , Y10S977/902 , Y10S977/904 , Y10S977/92 , Y10S977/921 , Y10S977/922 , Y10S977/924 , Y10T29/43 , Y10T29/49082
摘要： Sensor platforms and methods of making them are described. A platform having a non-horizontally oriented sensor element comprising one or more nanostructures such as nanotubes is described. Under certain embodiments, a sensor element has or is made to have an affinity for an analyte. Under certain embodiments, such a sensor element comprises one or more pristine nanotubes. Under certain embodiments, the sensor element comprises derivatized or functionalized nanotubes. Under certain embodiments, a sensor is made by providing a support structure; providing one or more nanotubes on the structure to provide material for a sensor element; and providing circuitry to electrically sense the sensor element's electrical characterization. Under certain embodiments, the sensor element comprises pre-derivatized or pre-functionalized nanotubes. Under other embodiments, sensor material is derivatized or functionalized after provision on the structure or after patterning. Under certain embodiments, a large-scale array of sensor platforms includes a plurality of sensor elements.
摘要翻译：介绍传感器平台及其制作方法。描述了具有包括一个或多个纳米结构如纳米管的非水平定向的传感器元件的平台。在某些实施方案中，传感器元件具有或被制成对分析物具有亲和性。在某些实施例中，这种传感器元件包括一个或多个原始纳米管。在某些实施方案中，传感器元件包括衍生的或功能化的纳米管。在某些实施例中，通过提供支撑结构来制造传感器; 在所述结构上提供一个或多个纳米管以提供用于传感器元件的材料; 以及提供用于电感测传感器元件电特性的电路。在某些实施方案中，传感器元件包括预衍生的或预功能化的纳米管。在其它实施例中，传感器材料在结构上提供之后或在图案化之后被衍生化或功能化。在某些实施例中，传感器平台的大规模阵列包括多个传感器元件。

2. 发明授权

US08125039B2 One-time programmable, non-volatile field effect devices and methods of making same 失效
标题翻译：一次性可编程，非易失性场效应器件及其制作方法
公开(公告)号：US08125039B2
公开(公告)日：2012-02-28
申请号：US11651177
申请日：2007-01-09
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal , Bernhard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal , Bernhard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash
IPC分类号： H01L29/84
CPC分类号： H01L29/78 , B82Y10/00 , B82Y99/00 , G11C7/065 , G11C13/025 , G11C16/0416 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/16 , G11C2213/17 , G11C2213/79 , H01H1/0094 , H01L27/10 , H01L27/1052 , H01L27/112 , H01L27/11206 , H01L27/115 , H01L27/286 , H01L29/0665 , H01L29/0673 , H01L29/42324 , H01L51/0048 , H01L51/0052 , H01L51/0508 , Y10S977/708 , Y10S977/724 , Y10S977/742 , Y10S977/762 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： One-time programmable, non-volatile field effect devices and methods of making same. Under one embodiment, a one-time-programmable, non-volatile field effect device includes a source, drain and gate with a field-modulatable channel between the source and drain. Each of the source, drain, and gate has a corresponding terminal. An electromechanically-deflectable, nanotube switching element is electrically coupled to one of the source, drain and gate and has an electromechanically-deflectable nanotube element that is positioned to be deflectable in response to electrical stimulation to form a non-volatile closed electrical state between the one of the source, drain and gate and its corresponding terminal.
摘要翻译：一次性可编程，非易失性场效应器件及其制作方法。在一个实施例中，一次性可编程的非易失性场效应器件包括源极，漏极和栅极，源极和漏极之间具有场可调整通道。源极，漏极和栅极中的每一个具有相应的端子。电机械可偏转的纳米管开关元件电耦合到源极，漏极和栅极中的一个，并且具有可机电偏转的纳米管元件，其被定位成响应于电刺激而可偏转以在第二电极之间形成非易失性闭合电状态源，漏，门之一及其相应的终端。

3. 发明授权

US07569880B2 Non-volatile electromechanical field effect devices and circuits using same and methods of forming same 有权
标题翻译：非易失性机电场效应器件和使用其的电路及其形成方法
公开(公告)号：US07569880B2
公开(公告)日：2009-08-04
申请号：US11731946
申请日：2007-04-02
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal , Bernhard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal , Bernhard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash
IPC分类号： H01L35/24 , H01L51/00 , H01L29/778
CPC分类号： H01L29/78 , B82Y10/00 , B82Y99/00 , G11C7/065 , G11C13/025 , G11C16/0416 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/16 , G11C2213/17 , G11C2213/79 , H01H1/0094 , H01L27/10 , H01L27/1052 , H01L27/112 , H01L27/11206 , H01L27/115 , H01L27/286 , H01L29/0665 , H01L29/0673 , H01L29/42324 , H01L51/0048 , H01L51/0052 , H01L51/0508 , Y10S977/708 , Y10S977/724 , Y10S977/742 , Y10S977/762 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： Under one aspect, a field effect device includes a gate, a source, and a drain, with a conductive channel between the source and the drain; and a nanotube switch having a corresponding control terminal, said nanotube switch being positioned to control electrical conduction through said conductive channel. Under another aspect, a field effect device includes a gate having a corresponding gate terminal; a source having a corresponding source terminal; a drain having a corresponding drain terminal; a control terminal; and a nanotube switching element positioned between one of the gate, source, and drain and its corresponding terminal and switchable, in response to electrical stimuli at the control terminal and at least one of the gate, source, and drain terminals, between a first non-volatile state that enables current flow between the source and the drain and a second non-volatile state that disables current flow between the source and the drain.
摘要翻译：在一个方面，场效应器件包括栅极，源极和漏极，源极和漏极之间具有导电沟道; 以及纳米管开关，其具有相应的控制端子，所述纳米管开关被定位成控制通过所述导电通道的导电。另一方面，场效应器件包括具有相应栅极端子的栅极; 具有相应源端的源; 具有相应的漏极端子的漏极; 一个控制终端; 以及纳米管开关元件，其位于所述栅极，源极和漏极中的一个与其相应的端子之间，并且响应于所述控制端子和所述栅极，源极和漏极端子中的至少一个，在第一非极性使得能够在源极和漏极之间流动的第一非易失性状态和禁止源极和漏极之间的电流的第二非易失性状态。

4. 发明授权

US07538400B2 Sensor platform using a non-horizontally oriented nanotube element 有权
标题翻译：传感器平台使用非水平取向的纳米管元件
公开(公告)号：US07538400B2
公开(公告)日：2009-05-26
申请号：US11333623
申请日：2006-01-17
申请人： Brent M. Segal , Thomas Rueckes , Bernhard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
发明人： Brent M. Segal , Thomas Rueckes , Bernhard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
IPC分类号： H01L49/00 , G01N27/02
CPC分类号： G01N27/4146 , B82Y15/00 , G11C13/025 , Y10S977/902 , Y10S977/904 , Y10S977/92 , Y10S977/921 , Y10S977/922 , Y10S977/924 , Y10T29/43 , Y10T29/49082
摘要： Sensor platforms and methods of making them are described. A platform having a non-horizontally oriented sensor element comprising one or more nanostructures such as nanotubes is described. Under certain embodiments, a sensor element has or is made to have an affinity for an analyte. Under certain embodiments, such a sensor element comprises one or more pristine nanotubes. Under certain embodiments, the sensor element comprises derivatized or functionalized nanotubes. Under certain embodiments, a sensor is made by providing a support structure; providing one or more nanotubes on the structure to provide material for a sensor element; and providing circuitry to electrically sense the sensor element's electrical characterization. Under certain embodiments, the sensor element comprises pre-derivatized or pre-functionalized nanotubes. Under other embodiments, sensor material is derivatized or functionalized after provision on the structure or after patterning. Under certain embodiments, a large-scale array of sensor platforms includes a plurality of sensor elements.
摘要翻译：描述传感器平台及其制作方法。描述了具有包括一个或多个纳米结构如纳米管的非水平定向的传感器元件的平台。在某些实施方案中，传感器元件具有或被制成对分析物具有亲和性。在某些实施例中，这种传感器元件包括一个或多个原始纳米管。在某些实施方案中，传感器元件包括衍生的或功能化的纳米管。在某些实施例中，通过提供支撑结构来制造传感器; 在所述结构上提供一个或多个纳米管以提供用于传感器元件的材料; 以及提供用于电感测传感器元件电特性的电路。在某些实施方案中，传感器元件包括预衍生的或预功能化的纳米管。在其它实施例中，传感器材料在结构上提供之后或在图案化之后被衍生化或功能化。在某些实施例中，传感器平台的大规模阵列包括多个传感器元件。

5. 发明授权

US07269052B2 Device selection circuitry constructed with nanotube technology 有权
标题翻译：纳米管技术构成的器件选择电路
公开(公告)号：US07269052B2
公开(公告)日：2007-09-11
申请号：US11546130
申请日：2006-10-10
申请人： Brent M. Segal , Darren K. Brock , Thomas Rueckes
发明人： Brent M. Segal , Darren K. Brock , Thomas Rueckes
IPC分类号： G11C11/00 , G11C7/00
CPC分类号： G11C23/00 , B82Y10/00 , G11C13/025 , G11C2213/77 , G11C2213/81 , H01H1/0094 , H01L27/10 , H01L27/1203 , Y10S977/734 , Y10S977/742 , Y10S977/765 , Y10S977/943
摘要： A memory system having electromechanical memory cells and decoders is disclosed. A decoder circuit selects at least one of the memory cells of an array of such cells. Each cell in the array is a crossbar junction at least one element of which is a nanotube or a nanotube ribbon. The decoder circuit is constructed of crossbar junctions at least one element of each junction being a nanotube or a nanotube ribbon.
摘要翻译：公开了一种具有机电存储器单元和解码器的存储器系统。解码器电路选择这种单元阵列的至少一个存储单元。阵列中的每个单元是其中的至少一个元素是纳米管或纳米管带的交叉连接。解码器电路由交叉连接点构成，每个结点的至少一个元件是纳米管或纳米管带。

6. 发明授权

US07161218B2 One-time programmable, non-volatile field effect devices and methods of making same 失效
公开(公告)号：US07161218B2
公开(公告)日：2007-01-09
申请号：US10864572
申请日：2004-06-09
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal , Bernhard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal , Bernhard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash
IPC分类号： H01L29/96
CPC分类号： H01L29/78 , B82Y10/00 , B82Y99/00 , G11C7/065 , G11C13/025 , G11C16/0416 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/16 , G11C2213/17 , G11C2213/79 , H01H1/0094 , H01L27/10 , H01L27/1052 , H01L27/112 , H01L27/11206 , H01L27/115 , H01L27/286 , H01L29/0665 , H01L29/0673 , H01L29/42324 , H01L51/0048 , H01L51/0052 , H01L51/0508 , Y10S977/708 , Y10S977/724 , Y10S977/742 , Y10S977/762 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： One-time programmable, non-volatile field effect devices and methods of making same. Under one embodiment, a one-time-programmable, non-volatile field effect device includes a source, drain and gate with a field-modulatable channel between the source and drain. Each of the source, drain, and gate has a corresponding terminal. An electromechanically-deflectable, nanotube switching element is electrically coupled to one of the source, drain and gate and has an electromechanically-deflectable nanotube element that is positioned to be deflectable in response to electrical stimulation to form a non-volatile closed electrical state between the one of the source, drain and gate and its corresponding terminal.

7. 发明授权

US07115901B2 Non-volatile electromechanical field effect devices and circuits using same and methods of forming same 有权
标题翻译：非易失性机电场效应器件和使用其的电路及其形成方法
公开(公告)号：US07115901B2
公开(公告)日：2006-10-03
申请号：US10864186
申请日：2004-06-09
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal , Bernhard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal , Bernhard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash
IPC分类号： H01L35/24 , H01L51/00 , H01L29/778
CPC分类号： H01L29/78 , B82Y10/00 , B82Y99/00 , G11C7/065 , G11C13/025 , G11C16/0416 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/16 , G11C2213/17 , G11C2213/79 , H01H1/0094 , H01L27/10 , H01L27/1052 , H01L27/112 , H01L27/11206 , H01L27/115 , H01L27/286 , H01L29/0665 , H01L29/0673 , H01L29/42324 , H01L51/0048 , H01L51/0052 , H01L51/0508 , Y10S977/708 , Y10S977/724 , Y10S977/742 , Y10S977/762 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： Non-volatile field effect devices and circuits using same. A non-volatile field effect device includes a source, drain and gate with a field-modulatable channel between the source and drain. Each of the source, drain, and gate have a corresponding terminal. An electromechanically-deflectable, nanotube switching element is electrically positioned between one of the source, drain and gate and its corresponding terminal. The others of the source, drain and gate are directly connected to their corresponding terminals. The nanotube switching element is electromechanically-deflectable in response to electrical stimulation at two control terminals to create one of a non-volatile open and non-volatile closed electrical communication state between the one of the source, drain and gate and its corresponding terminal. Under one embodiment, one of the two control terminals has a dielectric surface for contact with the nanotube switching element when creating a non-volatile open state. Under one embodiment, the source, drain and gate may be stimulated at any voltage level from ground to supply voltage, and wherein the two control terminals are stimulated at any voltage level from ground to a switching threshold voltage larger in magnitude than the supply voltage. Under one embodiment, the nanotube switching element includes an article made from nanofabric that is positioned between the two control terminals. Under one embodiment, one of the two control terminals is a release electrode for electrostatically pulling the nanotube article out of contact with the one of the source, drain and gate so as to form a non-volatile open state. Under one embodiment, the other of the two control terminals is a set electrode for electrostatically pulling the nanotube article into contact with the one of the source, drain and gate so as to form a non-volatile closed state.
摘要翻译：非易失性场效应器件和使用它的电路。非易失性场效应器件包括在源极和漏极之间具有场可调通道的源极，漏极和栅极。源极，漏极和栅极中的每一个都具有相应的端子。电气可偏转的纳米管开关元件电气地定位在源极，漏极和栅极之一及其对应的端子之间。源极，漏极和栅极中的其他物体直接连接到其相应的端子。纳米管开关元件响应于在两个控制端子处的电刺激而机电可偏转以产生源极，漏极和栅极之一与其相应的端子之间的非易失性开放和非易失性闭合电连通状态之一。在一个实施例中，当创建非易失性打开状态时，两个控制端中的一个具有用于与纳米管开关元件接触的电介质表面。在一个实施例中，源极，漏极和栅极可以在从地面到电源电压的任何电压电平下被激励，并且其中两个控制端子被激励在从接地到比电源电压更大幅度的开关阈值电压的任何电压电平。在一个实施例中，纳米管开关元件包括由纳米制成的制品，其位于两个控制端子之间。在一个实施例中，两个控制端子中的一个是用于静电拉伸纳米管制品的释放电极，与源极，漏极和栅极之一不接触，以形成非易失性的打开状态。在一个实施例中，两个控制端子中的另一个是用于静电拉动纳米管制品与源极，漏极和栅极之一接触的设置电极，以便形成非易失性闭合状态。

8. 发明授权

US06979590B2 Methods of making electromechanical three-trace junction devices 有权
公开(公告)号：US06979590B2
公开(公告)日：2005-12-27
申请号：US10824679
申请日：2004-04-15
申请人： Thomas Rueckes , Brent M. Segal , Darren K. Brock
发明人： Thomas Rueckes , Brent M. Segal , Darren K. Brock
IPC分类号： B81B3/00 , G11C11/34 , G11C13/02 , H01H59/00 , H01L21/768 , H01L51/40
CPC分类号： H01L21/76838 , B81C1/00142 , B81C2201/019 , B82Y10/00 , G11C13/025 , G11C23/00 , G11C2213/16 , G11C2213/81 , H01H1/0094 , Y10S977/734
摘要： Methods of producing an electromechanical circuit element are described. A lower structure having lower support structures and a lower electrically conductive element is provided. A nanotube ribbon (or other electromechanically responsive element) is formed on an upper surface of the lower structure so as to contact the lower support structures. An upper structure is provided over the nanotube ribbon. The upper structure includes upper support structures and an upper electrically conductive element. In some arrangements, the upper and lower electrically conductive elements are in vertical alignment, but in some arrangements they are not.

9. 发明授权

US08058089B2 Electromechanical memory array using nanotube ribbons and method for making same 有权
标题翻译：使用纳米管带的机电存储器阵列及其制造方法
公开(公告)号：US08058089B2
公开(公告)日：2011-11-15
申请号：US12415247
申请日：2009-03-31
申请人： Brent M. Segal , Darren K. Brock , Thomas Rueckes
发明人： Brent M. Segal , Darren K. Brock , Thomas Rueckes
IPC分类号： H01L21/00
CPC分类号： G11C23/00 , B82Y10/00 , G11C13/025 , G11C2213/16 , G11C2213/81 , H01H1/0094 , H01L21/76838 , H01L27/10 , Y10S977/724 , Y10S977/742 , Y10S977/796 , Y10S977/856 , Y10S977/888 , Y10S977/943 , Y10T428/24893 , Y10T428/24917
摘要： Electromechanical circuits, such as memory cells, and methods for making same are disclosed. The circuits include a structure having electrically conductive traces and supports extending from a surface of the substrate, and nanotube ribbons suspended by the supports that cross the electrically conductive traces, wherein each ribbon comprises one or more nanotubes. The electro-mechanical circuit elements are made by providing a structure having electrically conductive traces and supports, in which the supports extend from a surface of the substrate. A layer of nanotubes is provided over the supports, and portions of the layer of nanotubes are selectively removed to form ribbons of nanotubes that cross the electrically conductive traces. Each ribbon includes one or more nanotubes.
摘要翻译：公开了诸如存储单元的机电电路及其制造方法。这些电路包括具有导电迹线和从衬底表面延伸的支撑体的结构，以及由支撑体悬挂的穿过导电迹线的纳米管带，其中每个带包括一个或多个纳米管。电 - 机械电路元件通过提供具有导电迹线和支撑件的结构来制造，其中支撑件从基板的表面延伸。在载体上提供一层纳米管，并且选择性地去除纳米管层的部分以形成穿过导电迹线的纳米管带。每个带包括一个或多个纳米管。

10. 发明授权

US07928523B2 Non-volatile electromechanical field effect devices and circuits using same and methods of forming same 有权
标题翻译：非易失性机电场效应器件和使用其的电路及其形成方法
公开(公告)号：US07928523B2
公开(公告)日：2011-04-19
申请号：US12512428
申请日：2009-07-30
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal , Bernhard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal , Bernhard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash
IPC分类号： H01L29/82
CPC分类号： H01L29/78 , B82Y10/00 , B82Y99/00 , G11C7/065 , G11C13/025 , G11C16/0416 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/16 , G11C2213/17 , G11C2213/79 , H01H1/0094 , H01L27/10 , H01L27/1052 , H01L27/112 , H01L27/11206 , H01L27/115 , H01L27/286 , H01L29/0665 , H01L29/0673 , H01L29/42324 , H01L51/0048 , H01L51/0052 , H01L51/0508 , Y10S977/708 , Y10S977/724 , Y10S977/742 , Y10S977/762 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： Under one aspect, a field effect device includes a gate, a source, and a drain, with a conductive channel between the source and the drain; and a nanotube switch having a corresponding control terminal, said nanotube switch being positioned to control electrical conduction through said conductive channel. Under another aspect, a field effect device includes a gate having a corresponding gate terminal; a source having a corresponding source terminal; a drain having a corresponding drain terminal; a control terminal; and a nanotube switching element positioned between one of the gate, source, and drain and its corresponding terminal and switchable, in response to electrical stimuli at the control terminal and at least one of the gate, source, and drain terminals, between a first non-volatile state that enables current flow between the source and the drain and a second non-volatile state that disables current flow between the source and the drain.
摘要翻译：在一个方面，场效应器件包括栅极，源极和漏极，源极和漏极之间具有导电沟道; 以及纳米管开关，其具有相应的控制端子，所述纳米管开关被定位成控制通过所述导电通道的导电。另一方面，场效应器件包括具有相应栅极端子的栅极; 具有相应源端的源; 具有相应的漏极端子的漏极; 一个控制终端; 以及纳米管开关元件，其位于所述栅极，源极和漏极中的一个与其相应的端子之间，并且响应于所述控制端子和所述栅极，源极和漏极端子中的至少一个，在第一非极性使得能够在源极和漏极之间流动的第一非易失性状态和禁止源极和漏极之间的电流的第二非易失性状态。

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