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1. 发明授权

US5419276A Single-crystal diamond of very high thermal conductivity 失效
标题翻译：单晶金刚石具有很高的导热性
公开(公告)号：US5419276A
公开(公告)日：1995-05-30
申请号：US163608
申请日：1993-12-06
申请人： Thomas R. Anthony , William F. Banholzer , James F. Fleischer , James W. Bray , Jerome J. Tiemann , Laurence Bigio
发明人： Thomas R. Anthony , William F. Banholzer , James F. Fleischer , James W. Bray , Jerome J. Tiemann , Laurence Bigio
IPC分类号： B01J3/06 , C01B31/06 , C09K3/14 , C30B25/02 , C30B29/04 , G02B5/20
CPC分类号： C01B31/06 , B01J3/062 , C30B25/02 , C30B29/04 , B01J2203/061 , B01J2203/062 , B01J2203/0625 , B01J2203/0655 , B01J2203/068 , B01J2203/0685
摘要： Single-crystal diamond consisting of isotopically pure carbon-12 or carbon-13 has been found to have a thermal conductivity higher than that of any substance previously known, typically at least 40% higher than that of naturally occurring IIA diamond. It may be prepared by a method comprising comminution of diamond of high isotopic purity, such as that obtained by low pressure chemical vapor deposition employing an isotopically pure hydrocarbon in combination with hydrogen, followed by conversion of the comminuted diamond to single-crystal diamond under high pressure conditions.
摘要翻译：已经发现由同位素纯碳-12或碳-13组成的单晶金刚石的导热率高于以前已知的任何物质的导热率，通常比天然存在的IIA金刚石高出至少40％。它可以通过包括粉碎高同位素纯度的金刚石的方法制备，例如通过使用同位素纯的烃与氢组合的低压化学气相沉积获得的方法，然后将粉碎的金刚石转化为高温下的单晶金刚石压力条件。

2. 发明授权

US5302231A CVD diamond by alternating chemical reactions 失效
标题翻译： CVD金刚石交替进行化学反应
公开(公告)号：US5302231A
公开(公告)日：1994-04-12
申请号：US956817
申请日：1992-10-05
申请人： Harold P. Bovenkerk , Thomas R. Anthony , James F. Fleischer , William F. Banholzer
发明人： Harold P. Bovenkerk , Thomas R. Anthony , James F. Fleischer , William F. Banholzer
IPC分类号： C23C16/26 , C23C16/27 , C30B25/02 , C30B29/04 , C30B25/00
CPC分类号： C23C16/27 , C23C16/277 , C30B25/02 , C30B29/04
摘要： The present invention relates to a method for growing diamond on a diamond substrate by chemical vapor deposition. The inventive method comprises alternatingly contacting at elevated temperature said diamond substrate with a gas having the formula C.sub.n X.sub.m and then with a gas having the formula C.sub.l Z.sub.p. X and Z each form single bonds with carbon. X and Z also are reactable to form ZX or a derivative thereof. The Z--X bond is stronger than the C--X bond and also is stronger than the C--Z bond. In the formulas, n, m, l, and p are integers. If C.sub.n X.sub.m and C.sub.l Z.sub.p do not react in the gas phase, then a gas mixture of them can be used to grow diamond instead of the alternating exposure of one and then the other.
摘要翻译：本发明涉及通过化学气相沉积在金刚石基底上生长金刚石的方法。本发明的方法包括在升高的温度下将所述金刚石基底与具有式C n X m的气体交替接触，然后与具有式ClZp的气体交替接触。 X和Z各自与碳形成单键。 X和Z也可以反应形成ZX或其衍生物。 Z-X键比C-X键强，也比C-Z键强。在公式中，n，m，l和p是整数。如果CnXm和ClZp在气相中没有反应，则可以使用它们的气体混合物来生长金刚石，而不是交替暴露于另一种。

3. 发明授权

US5540904A Isotopically-pure carbon-12 or carbon-13 polycrystalline diamond possessing enhanced thermal conductivity 失效
标题翻译：具有增强的导热性的同位素纯碳12或碳-13多晶金刚石
公开(公告)号：US5540904A
公开(公告)日：1996-07-30
申请号：US368732
申请日：1995-01-04
申请人： Harold P. Bovenkerk , Thomas R. Anthony , James F. Fleischer , William F. Banholzer
发明人： Harold P. Bovenkerk , Thomas R. Anthony , James F. Fleischer , William F. Banholzer
IPC分类号： B01J3/06 , C01B31/06 , C23C16/27 , C30B25/02
CPC分类号： C23C16/27 , B01J3/062 , C01B31/06 , C30B25/02 , C30B29/04 , B01J2203/061 , B01J2203/062 , B01J2203/0625 , B01J2203/0645 , B01J2203/0655 , B01J2203/066 , B01J2203/068 , B01J2203/0685
摘要： Broadly, the present invention is directed to polycrystalline diamond of improved thermal conductivity. The novel polycrystalline diamond consists essentially of at least 99.5 wt-% isotopically-pure carbon-12 or carbon-13. The inventive polycrystalline diamond is formed from at least 99.5 wt-% isotopically-pure carbon-12 or carbon-13. Single-crystal isotopically-pure carbon-12 and carbon-13 diamond are known to possess improved thermal conductivity. Polycrystalline diamond, however, possesses lower thermal conductivity patterns deleteriously impacted by, for example, impurities, isotopic effects, and grain boundary scattering. In fact, grain boundary scattering would lead the skilled artisan to believe that the thermal conductivity of polycrystalline diamond would be substantially unaffected by the isotopic nature of the diamond itself. Unexpectedly, however, isotopic effects were discovered to predominate in impacting the thermal conductivity of polycrystalline diamond consisting essentially of isotopically-pure carbon-12 or carbon-13. This is true whether the isotopically-pure polycrystalline diamond is grown directly or whether individual isotopically-pure carbon-12 or carbon 13 diamond crystals are subjected to sintering for forming a polycrystalline structure, e.g. layer or compact, thereof.
摘要翻译：概括地说，本发明涉及具有改善导热性的多晶金刚石。新型多晶金刚石基本上由至少99.5重量％的同位素纯碳-12或碳-13组成。本发明的多晶金刚石由至少99.5重量％的同位素纯碳-12或碳-13形成。已知单晶同位素纯碳-12和碳-13金刚石具有改善的导热性。然而，多晶金刚石具有由例如杂质，同位素效应和晶界散射有害影响的较低热导率图案。事实上，晶粒边界散射将导致技术人员相信，多晶金刚石的导热性将基本上不受金刚石本身的同位素性质的影响。然而，意外的是，发现同位素效应在影响基本上由同位素纯碳-12或碳-13组成的多晶金刚石的热导率方面占优势。无论同位素纯多晶金刚石是直接生长还是单独同位素纯碳12或碳13金刚石晶体进行烧结以形成多晶结构，例如，层或紧凑。

4. 发明授权

US5096736A CVD diamond for coating twist drills 失效
标题翻译： CVD金刚石涂层烫伤
公开(公告)号：US5096736A
公开(公告)日：1992-03-17
申请号：US563367
申请日：1990-08-07
申请人： Thomas R. Anthony , William F. Banholzer , Robert H. Ettinger , James F. Fleischer
发明人： Thomas R. Anthony , William F. Banholzer , Robert H. Ettinger , James F. Fleischer
IPC分类号： B23P15/28 , C23C16/26 , C23C16/27 , C23C16/44 , C23C16/458 , C30B29/04
CPC分类号： C23C16/458 , C23C16/271
摘要： The present invention enables the diamond coating of stationary elongate objects, such as twist drills, with a continuous uniform film without any motion of the twist drill due to the unexpected superb "throwing power" of a reactor disclosed herein. The CVD diamond reactor includes a vacuum chamber, inlet for feed hydrogen/hydrocarbon mixtures, and an outlet, in conventional fashion. The improvement for coating with CVD diamond the entire outer surface of at least a portion of a plurality of stationary elongate objects comprises disposed within said reactor, an elongate metal tube having a plurality of apertures for holding elongate objects disposed radially inwardly and having a cooling pipe in thermal contact with and disposed about the outside of said metal tube; and a filament running within said tube along its lengthwise extent and being in electrical connection with the source of voltage for heating said filament to a temperature adequate to initiate hydrocarbon disassociation, the portions of said elongate object within said tube surrounding said filament being heated thereby.

5. 发明授权

US5310447A Single-crystal diamond of very high thermal conductivity 失效
标题翻译：单晶金刚石具有很高的导热性
公开(公告)号：US5310447A
公开(公告)日：1994-05-10
申请号：US744815
申请日：1991-08-12
申请人： Thomas R. Anthony , William F. Banholzer , James F. Fleischer
发明人： Thomas R. Anthony , William F. Banholzer , James F. Fleischer
IPC分类号： B01J3/06 , C01B31/06 , C30B25/02 , C30B29/04
CPC分类号： C01B31/06 , B01J3/062 , C30B25/02 , C30B29/04 , B01J2203/061 , B01J2203/062 , B01J2203/0625 , B01J2203/0655 , B01J2203/068 , B01J2203/0685 , Y10S117/915
摘要： Single-crystal diamond consisting of isotopically pure carbon-12 or carbon-13 has been found to have a thermal conductivity higher than that of any substance previously known, typically at least 40% higher than that of naturally occurring IIA diamond. It may be prepared by a method comprising an initial step of low pressure chemical vapor deposition employing an isotopically pure hydrocarbon in combination with hydrogen, followed by comminution of the diamond thus obtained and conversion thereof to single-crystal diamond under high pressure conditions.
摘要翻译：已经发现由同位素纯碳-12或碳-13组成的单晶金刚石的导热率高于以前已知的任何物质的导热率，通常比天然存在的IIA金刚石高出至少40％。它可以通过包括使用同位素纯烃与氢组合的低压化学气相沉积的初始步骤的方法制备，然后粉碎如此获得的金刚石并在高压条件下将其转化成单晶金刚石。

6. 发明授权

US5256206A CVD diamond for coating twist drills 失效
标题翻译： CVD金刚石涂层麻花钻
公开(公告)号：US5256206A
公开(公告)日：1993-10-26
申请号：US929239
申请日：1992-08-14
申请人： Thomas R. Anthony , William F. Banholzer , Robert H. Ettinger , James F. Fleischer
发明人： Thomas R. Anthony , William F. Banholzer , Robert H. Ettinger , James F. Fleischer
IPC分类号： C23C16/27 , C23C16/458 , C23C16/00
CPC分类号： C23C16/458 , C23C16/271
摘要： The present invention enables the diamond coating of stationary elongate objects, such as twist drills, with a continuous uniform film without any motion of the twist drill due to the unexpected superb "throwing power" of a reactor disclosed herein. The CVD diamond reactor includes a vacuum chamber, inlet for feed hydrogen/hydrocarbon mixtures, and an outlet, in conventional fashion. The improvement for coating with CVD diamond the entire outer surface of at least a portion of a plurality of stationary elongate objects comprises disposed within said reactor, an elongate metal tube having a plurality of apertures for holding elongate objects disposed radially inwardly and having a cooling pipe in thermal contact with and disposed about the outside of said metal tube; and a filament running within said tube along its lengthwise extent and being in electrical connection with the source of voltage for heating said filament to a temperature adequate to initiate hydrocarbon disassociation, the portions of said elongate object within said tube surrounding said filament being heated thereby.
摘要翻译：本发明使得由于本文公开的反应堆的意想不到的极好的“投掷力”，可以使具有连续均匀膜的固定细长物体（例如麻花钻）的金刚石涂层，而不需要麻花钻的任何运动。 CVD金刚石反应器以常规方式包括真空室，进料氢/烃混合物的入口和出口。用CVD金刚石涂层的改进使得多个静止细长物体的至少一部分的整个外表面包括设置在所述反应器内的细长金属管，其具有多个孔，用于保持径向向内设置的细长物体并具有冷却管与所述金属管的外部热接触并设置在所述金属管的外部; 以及沿着其长度方向在所述管内延伸的细丝，并且与用于将所述细丝加热到足以引发碳氢化合物分解的温度的电压源电连接，所述细长物体在围绕所述细丝的管内的部分被加热。

7. 发明授权

US07241434B2 High pressure and high temperature production of diamonds 有权
标题翻译：高压和高温生产的钻石
公开(公告)号：US07241434B2
公开(公告)日：2007-07-10
申请号：US10344249
申请日：2001-08-08
申请人： Thomas R. Anthony , Yavuz Kadioglu , Suresh S. Vagarali , Steven W. Webb , William E. Jackson , William F. Banholzer , John K. Casey , Alan C. Smith
发明人： Thomas R. Anthony , Yavuz Kadioglu , Suresh S. Vagarali , Steven W. Webb , William E. Jackson , William F. Banholzer , John K. Casey , Alan C. Smith
IPC分类号： C01B31/06
CPC分类号： B01J3/062 , B01J3/067 , B01J2203/062 , B01J2203/0655 , B01J2203/0695 , B24B19/16 , B30B11/004 , B30B11/007
摘要： The present invention is directed to a method for treating discolored natural diamond, especially Type IIa diamond and Type IaA/B diamond with nitrogen as predominantly B centers, for improving its color. The method includes preblocking and preshaping a discolored natural diamond to prevent its breakage in a high pressure/high temperature (HP/HT) press, placing said discolored natural diamond in a pressure transmitting medium which is consolidated into a pill. Next, the pill is placed into a HP/HT press at elevated pressure and elevated temperature within the graphite-stable or diamond-stable range of the carbon phase diagram for a time sufficient to improve the color of said diamond. Finally, the diamond is recovered from said press. Colorless and fancy colored diamonds can be made by this method.
摘要翻译：本发明涉及一种用于处理变色的天然金刚石，特别是II型金刚石和具有氮作为主要B中心的IaA / B型金刚石，以改善其颜色。该方法包括预先阻挡和预变形变色的天然金刚石，以防止其在高压/高温（HP / HT）压机中破裂，将所述变色的天然金刚石置于压力传递介质中，将其固结成丸剂。接下来，将药片放置在HP / HT压机中，在碳相图的石墨稳定或金刚石稳定范围内的升高的压力和升高的温度下，足以改善所述金刚石的颜色。最后，从所述印刷机中回收钻石。无色和花式彩色钻石可以通过这种方法制成。

8. 发明授权

US5672395A Method for enhancing the toughness of CVD diamond 失效
标题翻译：提高CVD金刚石韧性的方法
公开(公告)号：US5672395A
公开(公告)日：1997-09-30
申请号：US654815
申请日：1996-05-29
申请人： Thomas R. Anthony , William F. Banholzer , Clifford L. Spiro , Steven W. Webb , Bradley E. Williams
发明人： Thomas R. Anthony , William F. Banholzer , Clifford L. Spiro , Steven W. Webb , Bradley E. Williams
IPC分类号： C23C16/26 , C23C16/27 , C23C16/56 , B05D3/00
CPC分类号： C23C16/27 , C23C16/56
摘要： A method for treating as as-grown chemical vapor deposited (CVD) starting diamond film having stresses and containing voids, comprises the step of subjecting the diamond film to a temperature of above about 1000.degree. C. and a hydrostatic pressure of above about 3 kilobars.
摘要翻译：用于处理作为生长的化学气相沉积（CVD）起始具有应力和含有空隙的金刚石膜的方法包括使金刚石膜经受高于约1000℃的温度和高于约3千伏的静水压力的步骤。

9. 发明授权

US5363556A Water jet mixing tubes used in water jet cutting devices and method of preparation thereof 失效
标题翻译：用于水射流切割装置的喷水混合管及其制备方法
公开(公告)号：US5363556A
公开(公告)日：1994-11-15
申请号：US099989
申请日：1993-07-30
申请人： William F. Banholzer , Thomas R. Anthony , Robert S. Gilmore , Paul A. Siemers , John C. McCloskey
发明人： William F. Banholzer , Thomas R. Anthony , Robert S. Gilmore , Paul A. Siemers , John C. McCloskey
IPC分类号： B24C1/04 , B24C5/04 , B26F3/00 , C23C16/01 , C23C16/26 , C23C16/27 , C23C28/00 , B05B1/02 , B05D7/22 , B29C41/02
CPC分类号： C23C16/27 , B24C1/045 , B24C5/04 , C23C16/01 , Y02T50/67 , Y10S239/19 , Y10T29/49432 , Y10T29/49812 , Y10T29/49822
摘要： An improved two membered substantially crack-free water jet mixing tube of an abrasive water jet cutting device and a method of its preparation. The method comprises chemically vapor depositing diamond layer on a funnel shaped support member to form an inner member of the mixing tube, separating the inner member from the support member, depositing and then cooling an outer member on the outer side of the inner member to produce a compressive stress on the inner member that substantially prevents formation cracks on the inner member. The inner side of the inner member has a smooth bore having a microcrystalline structure and the outer member has a higher coefficient of thermal expansion than diamond. The invention is also directed to a water jet cutting device that incorporates the aforementioned improved substantially crack-free water jet mixing tube.
摘要翻译：磨料水射流切割装置的改进的两元基本上无裂缝的水射流混合管及其制备方法。该方法包括在漏斗状支撑构件上化学气相沉积金刚石层以形成混合管的内部构件，将内部构件与支撑构件分离，沉积然后冷却内部构件的外侧上的外部构件以产生内部构件上的压缩应力基本上防止内部构件上的形成裂纹。内部构件的内侧具有具有微晶结构的光滑孔，并且外部构件具有比金刚石更高的热膨胀系数。本发明还涉及一种水射流切割装置，其包括上述改进的基本上无裂缝的水射流混合管。

10. 发明授权

US5360479A Isotopically pure single crystal epitaxial diamond films and their preparation 失效
标题翻译：同位素纯单晶外延金刚石薄膜及其制备方法
公开(公告)号：US5360479A
公开(公告)日：1994-11-01
申请号：US547651
申请日：1990-07-02
申请人： William F. Banholzer , Thomas R. Anthony , Dennis M. Williams
发明人： William F. Banholzer , Thomas R. Anthony , Dennis M. Williams
IPC分类号： B01J3/06 , C23C16/27 , C30B25/02 , C30B25/10 , C30B29/04
CPC分类号： C30B25/02 , B01J3/06 , C23C16/27 , C30B25/105 , C30B29/04 , B01J2203/0655
摘要： The present invention is directed to the production of single-crystal diamond consisting of isotopically pure carbon-12 or carbon-13. The product is believed to be like that diamond product in application Ser. No. 448,469, but is made by a different method. In the present invention, isotopically pure single-crystal diamond is grown on a single crystal substrate directly from isotopically pure carbon-12 or carbon-13. One method for forming isotopically pure single-crystal diamond comprises the steps of placing in a reaction chamber a single crystal substrate heated to an elevated CVD diamond-forming temperature. A gaseous mixture of hydrogen and a hydrocarbon of isotopically pure carbon-12 or carbon-13 is provided in the chamber. The gaseous mixture then is at least partially decomposed in the chamber to form an isotopically-pure single crystal diamond layer on the single crystal substrate disposed therein. The thus-formed isotopically-pure single crystal diamond layer optionally may be removed from the single crystal substrate. Another method for forming isotopically-pure single-crystal diamond comprises diffusing isotopically-pure carbon-12 or carbon-13 through a metallic catalyst/solvent under high pressure to a region containing a single crystal substrate to form an isotopically-pure single-crystal diamond layer on said single crystal substrate. The single crystal substrate is stable under the high pressure and elevated temperatures used during the diffusion process. The single crystal substrates optionally may be diamond, including the isotopically-pure single-crystal diamond films formed by the inventive method disclosed herein, thus forming multi-layered diamond structures.
摘要翻译：本发明涉及由同位素纯碳-12或碳-13组成的单晶金刚石的制备。该产品被认为是应用Ser中的那种钻石产品。 No. 448,469，但是由不同的方法制成。在本发明中，同位素纯的单晶金刚石直接从同位素纯碳-12或碳-13生长在单晶基底上。用于形成同位素纯的单晶金刚石的一种方法包括以下步骤：将加热到升高的CVD金刚石形成温度的单晶衬底置于反应室中。在室中提供氢气和同位素纯碳-12或碳-13烃的气体混合物。气体混合物然后在腔室中至少部分分解，以在设置在其中的单晶衬底上形成同位素纯的单晶金刚石层。如此形成的同位素纯的单晶金刚石层任选地可以从单晶衬底去除。用于形成同位素纯的单晶金刚石的另一种方法包括将同位素纯的碳-12或碳-13通过金属催化剂/溶剂在高压下扩散到含有单晶底物的区域，以形成同位素纯的单晶金刚石在所述单晶衬底上。单晶基板在扩散过程中使用的高压和高温下是稳定的。单晶衬底任选地可以是金刚石，包括通过本文公开的本发明方法形成的同位素纯的单晶金刚石膜，从而形成多层金刚石结构。

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