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    • 5. 发明授权
    • Auto-negotiation using negative link pulses
    • 使用负链路脉冲进行自动协商
    • US06141350A
    • 2000-10-31
    • US291036
    • 1999-04-14
    • Dinesh MahaleThomas J. Runaldue
    • Dinesh MahaleThomas J. Runaldue
    • H04J3/06H04L5/14H04L12/24H04L12/413H04L25/03H04L29/06H04L29/08H04L12/40H04J3/02
    • H04L25/03885H04J3/0688H04L12/40032H04L12/413H04L41/046H04L5/1438H04L69/323H04L49/3054
    • A novel auto-negotiation system capable of performing auto-negotiation using negative link pulses. The auto-negotiation system operates in a network transceiver for interconnecting multiple hub communication devices having different operating speeds and link partners provided on a transmission medium. The network transceiver comprises physical layer devices for supporting data exchange between the hub devices and the link partners, and an auto-negotiation device that transmits and receives link pulses of a prescribed polarity carrying auto-negotiation information to and from the link partners to select a mode of communication between the hub devices and the link partners. A reverse polarity detection and correction circuit is provided for supporting auto-negotiation operations when link pulses received from a link partner have a reverse polarity. In a preferred embodiment, the reverse polarity detection and correction circuit comprises a polarity detector for detecting polarity of the link pulses received from the link partner, and a link pulse detector for distinguishing link pulses from data received from the link partner. A polarity reversing circuit responsive to the polarity detector and the link pulse detector reverses polarity of the received link pulses.
    • 一种能够使用负链路脉冲执行自动协商的新型自动协商系统。 自动协商系统在网络收发器中操作,用于互连具有不同操作速度的多个集线器通信设备和设置在传输介质上的链路伙伴。 网络收发器包括用于支持集线器设备和链路伙伴之间的数据交换的物理层设备,以及自动协商设备,该设备向链路伙伴发送和接收带有自动协商信息的规定极性的链路脉冲,以选择一个 集线器设备和链路伙伴之间的通信模式。 提供了反向极性检测和校正电路,用于在从链路伙伴接收到的链路脉冲具有相反极性时支持自动协商操作。 在优选实施例中,反极性检测和校正电路包括用于检测从链路伙伴接收的链路脉冲的极性的极性检测器和用于区分链路脉冲与从链路伙伴接收的数据的链路脉冲检测器。 响应于极性检测器和链路脉冲检测器的极性反转电路反转所接收的链路脉冲的极性。
    • 9. 发明授权
    • CMOS current mirror
    • CMOS电流镜
    • US5672993A
    • 1997-09-30
    • US601898
    • 1996-02-15
    • Thomas J. Runaldue
    • Thomas J. Runaldue
    • G05F3/26H03K17/62
    • G05F3/262
    • A current mirror circuit for mirroring current in CMOS integrated circuit technology includes a current mirror arrangement formed of first and second P-channel MOS transistors (MP32,MP33), a variable input current source (I.sub.CS), a first source follower transistor (MN34), a second source follower transistor (MP35), a current-sinking transistor (MN31), and a load circuit 212. The load circuit is formed of a load transistor (MN36) and a load resistor (R1). In an alternate embodiment, the load circuit is formed of a single load resistor. As a result, the amount of current injected into the first P-channel MOS transistor (MP32) is more precisely mirrored into the second P-channel MOS transistor (MP33).
    • 用于在CMOS集成电路技术中镜像电流的电流镜电路包括由第一和第二P沟道MOS晶体管(MP32,MP33),可变输入电流源(ICS),第一源极跟随器晶体管(MN34) ,第二源极跟随器晶体管(MP35),电流吸收晶体管(MN31)和负载电路212.负载电路由负载晶体管(MN36)和负载电阻(R1)构成。 在替代实施例中,负载电路由单个负载电阻器形成。 结果,注入第一P沟道MOS晶体管(MP32)的电流量更精确地镜像到第二P沟道MOS晶体管(MP33)中。
    • 10. 发明授权
    • N-channel pull-up transistor with reduced body effect
    • 具有减少身体效应的N沟道拉杆晶体管
    • US5191244A
    • 1993-03-02
    • US760313
    • 1991-09-16
    • Thomas J. RunaldueQazi R. M. Mahmood
    • Thomas J. RunaldueQazi R. M. Mahmood
    • H01L21/8238H01L27/088H01L27/092H03K17/041H03K17/16H03K19/003H03K19/0175H03K19/094H03K19/0952
    • H03K17/04106H01L27/088H03K17/162H03K19/00315H03K19/00361H03K2217/0018
    • A CMOS output buffer circuit employing an N-channel pull-up transistor with reduced body effect includes an N-channel pull-up transistor (N2), an N-channel coupling transistor (N1), and an N-channel discharging transistor (N3). The pull-up transistor has its drain connected to an upper power supply potential (VCC), its source connected to an output node (20), its gate connected to a first internal node (B), and its local substrate connected to a second internal node (A). The coupling transistor has its source connected to the second internal node (A), its drain connected to the source of the pull-up transistor, its gate connected to the first internal node (B), and its local substrate connected to the local substrate of the pull-up transitor (N2). The discharging transistor has its drain connected to the second internal node (A), its source connected to a lower power supply potential (VCC), its gate connected to a third internal node (C), and its local substrate connected to the lower power supply potential (VSS). The coupling transistor and the discharging transistor serve to reduce the body effect on the pull-up transistor (N2) and to provide higher immunity from noise on the upper power supply potential (VCC).
    • 采用具有减小的体效应的N沟道上拉晶体管的CMOS输出缓冲电路包括N沟道上拉晶体管(N2),N沟道耦合晶体管(N1)和N沟道放电晶体管(N3 )。 上拉晶体管的漏极连接到上电源电位(VCC),其源极连接到输出节点(20),其栅极连接到第一内部节点(B),并且其栅极连接到第二内部节点 内部节点(A)。 耦合晶体管的源极连接到第二内部节点(A),其漏极连接到上拉晶体管的源极,其栅极连接到第一内部节点(B),其局部衬底连接到局部衬底 的上拉电阻(N2)。 放电晶体管的漏极连接到第二内部节点(A),其源极连接到较低的电源电位(VCC),其栅极连接到第三个内部节点(C),其局部衬底连接到较低功率 电源(VSS)。 耦合晶体管和放电晶体管用于减小上拉晶体管(N2)的体效应,并提供较高的上电源电压(VCC)上的噪声抗扰度。