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1. 发明授权

US07022467B1 Thermally developable materials having improved backside conductive layers 失效
标题翻译：具有改进的背面导电层的可热显影材料
公开(公告)号：US07022467B1
公开(公告)日：2006-04-04
申请号：US10999858
申请日：2004-11-30
申请人： Thomas J. Ludemann , Roland J. Koestner , Gary E. LaBelle , Darlene F. Philip
发明人： Thomas J. Ludemann , Roland J. Koestner , Gary E. LaBelle , Darlene F. Philip
IPC分类号： G03C1/498 , G03C1/89 , G03C1/85
CPC分类号： G03C1/4989 , G03C1/04 , G03C1/49872 , G03C1/85 , G03C1/853 , G03C2001/7628
摘要： Backside conductive layers with increased conductive efficiency can be provided for thermally developable materials by providing a buried conductive coating containing a lower molecular weight polyvinyl acetal binder (that is, a molecular weight of at least 8,000 and less than 30,000).
摘要翻译：通过提供含有较低分子量聚乙烯醇缩乙醛粘合剂（即分子量至少为8,000和小于30,000）的掩埋导电涂层，可为热可显影材料提供具有增加导电效率的背面导电层。

2. 发明授权

US07144689B2 Antistatic properties for thermally developable materials 失效
公开(公告)号：US07144689B2
公开(公告)日：2006-12-05
申请号：US11430460
申请日：2006-05-09
申请人： Thomas J. Ludemann , Gary E. LaBelle , Darlene F. Philip , Roland J. Koestner , Aparna V. Bhave
发明人： Thomas J. Ludemann , Gary E. LaBelle , Darlene F. Philip , Roland J. Koestner , Aparna V. Bhave
IPC分类号： G03C1/498 , G03C1/89 , G03C5/16
CPC分类号： G03C1/7614 , B41M5/42 , B41M5/426 , B41M5/44 , B41M2205/04 , B41M2205/36 , G03C1/49872 , G03C1/4989 , G03C1/85 , G03C2001/7628
摘要： The use of metal antimonates at high metal antimonate to binder ratios in buried backside conductive layers of thermographic and photothermographic materials allows the use of thin backside overcoat layers. The combination provides antistatic constructions having excellent antistatic properties that show less change in resistivity with changes in humidity. The thin backside overcoat layer serves to protect the buried antistatic layer.

3. 发明授权

US07105284B1 Thermally developable materials with narrow disperse amorphous silica 失效
标题翻译：具有窄分散无定形二氧化硅的可热显影材料
公开(公告)号：US07105284B1
公开(公告)日：2006-09-12
申请号：US11082627
申请日：2005-03-17
申请人： Darlene F. Philip , Thomas J. Ludemann , Roland J. Koestner , Gary E. LaBelle
发明人： Darlene F. Philip , Thomas J. Ludemann , Roland J. Koestner , Gary E. LaBelle
IPC分类号： G03C1/494 , G03C1/498 , G03C1/85
CPC分类号： G03C1/49872 , G03C1/04 , G03C1/4989 , G03C1/85 , G03C2001/7628 , Y10S430/162
摘要： Thermally developable materials including photothermographic and thermographic materials having an outermost backside layer that includes amorphous silica particles having a narrow particle size distribution. The narrower particle size distribution provides reduced haze and increased surface roughness that reduces blocking and machine feeding at comparable weight percent. The materials can also include conductive layers underneath the outermost backside layer.
摘要翻译：包括光热照相和热成像材料的可热显影材料，其具有包括具有窄粒度分布的无定形二氧化硅颗粒的最外侧背面层。较窄的粒度分布提供降低的雾度和增加的表面粗糙度，其以相当的重量百分比减少阻塞和机器进料。这些材料还可以包括在最外侧背面层下面的导电层。

4. 发明授权

US07087364B2 Antistatic properties for thermally developable materials 有权
标题翻译：耐热显影材料的抗静电性能
公开(公告)号：US07087364B2
公开(公告)日：2006-08-08
申请号：US10930438
申请日：2004-08-31
申请人： Thomas J. Ludemann , Gary E. LaBelle , Darlene F. Philip , Roland J. Koestner , Aparna V. Bhave
发明人： Thomas J. Ludemann , Gary E. LaBelle , Darlene F. Philip , Roland J. Koestner , Aparna V. Bhave
IPC分类号： G03C1/498 , G03C1/89 , G03C5/16
CPC分类号： G03C1/7614 , B41M5/42 , B41M5/426 , B41M5/44 , B41M2205/04 , B41M2205/36 , G03C1/49872 , G03C1/4989 , G03C1/85 , G03C2001/7628
摘要： The use of metal antimonates at high metal antimonate to binder ratios in buried backside conductive layers of thermographic and photothermographic materials allows the use of thin backside overcoat layers. The combination provides antistatic constructions having excellent antistatic properties that show less change in resistivity with changes in humidity. The thin backside overcoat layer serves to protect the buried antistatic layer.
摘要翻译：在热成像和光热照相材料的掩埋背面导电层中使用高金属锑酸盐金属锑酸盐对粘结剂的比例允许使用薄的背面外涂层。该组合提供具有优异抗静电性能的抗静电结构，其电阻率随湿度变化而变化较小。薄的背面外涂层用于保护埋地的防静电层。

5. 发明授权

US07153636B1 Thermally developable materials with abrasion-resistant backside coatings 失效
标题翻译：具有耐磨背面涂层的耐热可开发材料
公开(公告)号：US07153636B1
公开(公告)日：2006-12-26
申请号：US11194819
申请日：2005-08-01
申请人： Thomas J. Ludemann , Gary E. LaBelle , Roland J. Koestner , Thomas J. Kub , Karissa L. Eckert
发明人： Thomas J. Ludemann , Gary E. LaBelle , Roland J. Koestner , Thomas J. Kub , Karissa L. Eckert
IPC分类号： G03C1/498 , G03C1/85 , G03C1/89
CPC分类号： G03C1/7614 , G03C1/49872 , G03C1/4989 , G03C1/85 , G03C2001/7628 , Y10S430/162
摘要： Thermally developable materials including photothermographic and thermographic materials have an outermost backside layer that includes a combination of a polysiloxane and a smectite clay that has been modified with a quaternary ammonium compound. The resulting outermost backside layers exhibit improved abrasion resistance. The materials can also include conductive layers underneath the outermost backside layer.
摘要翻译：包括光热照相和热成像材料在内的可热显影材料具有最外侧的背面层，其包括已经用季铵化合物改性的聚硅氧烷和蒙脱石粘土的组合。所得最外面的背面层表现出改进的耐磨性。这些材料还可以包括在最外侧背面层下面的导电层。

6. 发明授权

US07173065B2 Thermally developable materials with improved conductive layer 有权
标题翻译：具有改进的导电层的可热显影材料
公开(公告)号：US07173065B2
公开(公告)日：2007-02-06
申请号：US11388917
申请日：2006-03-24
申请人： Thomas J. Ludemann , Gary E. LaBelle , Roland J. Koestner , Samuel Chen
发明人： Thomas J. Ludemann , Gary E. LaBelle , Roland J. Koestner , Samuel Chen
IPC分类号： B01F17/00 , B01F3/08 , B01F3/12 , C09K3/00
CPC分类号： G03C1/4989 , B41M5/40 , B41M5/426 , B41M5/44 , B41M2205/04 , B41M2205/36 , G03C1/49872
摘要： Backside conductive layers with increased conductive efficiency can be provided for thermally developable materials by formulating hydrophilic metal oxide clusters in a hydrophobic environment using low shear mixing conditions. The dry thickness and coating weight of the conductive layer are thereby reduced.
摘要翻译：通过使用低剪切混合条件在疏水环境中配制亲水性金属氧化物簇，可以提供具有增加导电效率的背面导电层用于可热显影材料。因此导电层的干燥厚度和涂层重量减少。

7. 发明授权

US07067242B2 Thermally developable materials with improved conductive layer 有权
标题翻译：具有改进的导电层的可热显影材料
公开(公告)号：US07067242B2
公开(公告)日：2006-06-27
申请号：US10978205
申请日：2004-10-29
申请人： Thomas J. Ludemann , Gary E. LaBelle , Roland J. Koestner , Samuel Chen
发明人： Thomas J. Ludemann , Gary E. LaBelle , Roland J. Koestner , Samuel Chen
IPC分类号： G03C1/498 , G03C1/85 , G03C1/89 , G03C5/29
CPC分类号： G03C1/4989 , B41M5/40 , B41M5/426 , B41M5/44 , B41M2205/04 , B41M2205/36 , G03C1/49872
摘要： Backside conductive layers with increased conductive efficiency can be provided for thermally developable materials by formulating hydrophilic metal oxide clusters in a hydrophobic environment using low shear mixing conditions. The dry thickness and coating weight of the conductive layer are thereby reduced.
摘要翻译：通过使用低剪切混合条件在疏水环境中配制亲水性金属氧化物簇，可以提供具有增加导电效率的背面导电层用于可热显影材料。因此导电层的干燥厚度和涂层重量减少。

8. 发明授权

US6109092A Method for testing transducer horn Assembly used in debubbling by monitoring operating frequency 失效
标题翻译：测量传感器喇叭的方法通过监测工作频率来进行脱泡时使用的组件
公开(公告)号：US6109092A
公开(公告)日：2000-08-29
申请号：US477926
申请日：2000-01-05
申请人： Robert Peter Kraus, Jr. , Fugui He , Roland J. Koestner , Steven D. Possanza , Paul P. Zontek
发明人： Robert Peter Kraus, Jr. , Fugui He , Roland J. Koestner , Steven D. Possanza , Paul P. Zontek
IPC分类号： G01N27/02 , B01D19/00 , G01H3/00 , G01H13/00 , G01H15/00 , G01M19/00
CPC分类号： G01H13/00 , B01D19/0078 , G01H15/00 , G01H3/005 , Y10S261/19
摘要： A method and apparatus for evaluating the end cap round transducer horn assemblies used in debubbling operations wherein the ECR THA can be evaluated off-line at both high and low power and on-line by making electrical measurements on the ECR THA. The electrical measurements are used to characterize the physical condition of the piezoelectric ceramics of the THA. A test box is employed to practice the method. The test box is connected between the THA and a signal analyzer. Power is supplied to the THA and the electrical signals across the THA are sampled. The sampled electrical signals are transmitted to the signal analyzer while maintaining the amplitude and phase relationship thereof. The sampled electrical signals are used to generate an impedance trace for the particular THA. That impedance trace is compared to a model impedance trace. In such manner, it can be determined whether the ECR THA is operational. Further, if the ECR THA is in working condition, the impedance trace can be used to determine how efficiently it is operating. This allows for an ultimate determination to be made of how well a particular ECR THA is functioning.
摘要翻译：一种用于评估在脱泡操作中使用的端盖圆形传感器喇叭组件的方法和装置，其中ECR THA可以通过对ECR THA进行电气测量而在高功率和低功率下在线评估。电气测量用于表征THA的压电陶瓷的物理状态。使用测试箱来实施该方法。测试箱连接在THA和信号分析仪之间。电源被提供给THA，并且跨越THA的电信号被采样。将采样的电信号传送到信号分析器，同时保持其幅度和相位关系。采样的电信号用于产生特定THA的阻抗迹线。该阻抗曲线与模型阻抗曲线进行比较。以这种方式，可以确定ECR THA是否可操作。此外，如果ECR THA处于工作状态，阻抗迹线可用于确定其工作效率。这允许最终确定特定ECR THA的功能如何。

9. 发明授权

US5403760A Method of making a HgCdTe thin film transistor 失效
标题翻译：制造HgCdTe薄膜晶体管的方法
公开(公告)号：US5403760A
公开(公告)日：1995-04-04
申请号：US151722
申请日：1993-11-15
申请人： Richard A. Schiebel , Michael A. Kinch , Roland J. Koestner
发明人： Richard A. Schiebel , Michael A. Kinch , Roland J. Koestner
IPC分类号： H01L21/34 , H01L21/265
CPC分类号： H01L29/66969 , Y10S148/064 , Y10S148/139
摘要： Group II-VI thin film transistors, a method of making same and a monolithic device containing a detector array as well as transistors coupled thereto wherein, according to a first embodiment, there is provided a group II-VI insulating substrate, a doped layer of a group II-VI semiconductor material disposed over the substrate, an insulating gate region disposed over the doped layer, a pair of spaced contacts on the doped layer providing source and drain contacts, a gate contact disposed over the insulating gate region, an insulating layer disposed over exposed regions of the substrate, doped layer, insulating gate region and contacts and metallization disposed on the insulating layer and extending through the insulating layer to the contacts. The thickness of the doped layer is less than the maximum depletion region thickness thereof. In accordance with a second embodiment, there is provided a group II-VI insulating substrate, a first conductive doped group II-VI semiconductor layer disposed over the substrate, a second doped group II-VI layer disposed over the first layer and forming a Schottky barrier therewith, an insulating layer disposed over exposed regions of the substrate, first doped layer and second doped layer and metallization disposed on the insulating layer and extending through the insulating layer to spaced regions on the first layer to form source and drain contacts thereto and to the second layer to form a gate contact thereto. The thickness of said first layer is less than the maximum depth of the depletion region formed by the junction of the first and second layers.
摘要翻译： II-VI族薄膜晶体管，其制造方法和包含检测器阵列的单片器件以及耦合到其上的晶体管，其中根据第一实施例，提供了II-VI族绝缘衬底，掺杂层设置在所述衬底上的II-VI族半导体材料，设置在所述掺杂层上的绝缘栅极区，在所述掺杂层上提供源极和漏极触点的一对隔开的触点，设置在所述绝缘栅极区上方的栅极触点，绝缘层设置在衬底的暴露区域，掺杂层，绝缘栅极区域和布置在绝缘层上并且穿过绝缘层延伸到触点的触点和金属化。掺杂层的厚度小于其最大耗尽区厚度。根据第二实施例，提供了一种组II-VI绝缘衬底，设置在衬底上的第一导电掺杂组II-VI半导体层，设置在第一层上并形成肖特基的第二掺杂组II-VI层设置在衬底的暴露区域上的绝缘层，第一掺杂层和第二掺杂层以及设置在绝缘层上的金属化层，并延伸穿过绝缘层到第一层上的间隔的区域，以形成源极和漏极触点，并且第二层与其形成栅极接触。所述第一层的厚度小于由第一层和第二层的接合形成的耗尽区的最大深度。

10. 发明授权

US08252712B2 Polymer dispersant addition to fuel cell electrode inks for improved manufacturability 有权
标题翻译：添加到燃料电池电极油墨中的聚合物分散剂用于改善可制造性
公开(公告)号：US08252712B2
公开(公告)日：2012-08-28
申请号：US12551237
申请日：2009-11-13
申请人： Roland J. Koestner , Sean M Mackinnon , Timothy J. Fuller , Jeanette E. Owejan
发明人： Roland J. Koestner , Sean M Mackinnon , Timothy J. Fuller , Jeanette E. Owejan
IPC分类号： H01M8/10 , H01M4/86 , H01M4/88 , B01J21/18 , B05D5/12
CPC分类号： H01M4/8668 , H01M4/8663 , H01M4/8828 , H01M2008/1095
摘要： An ink composition for forming a fuel cell electrode includes a catalyst composition, a polymeric binder, a polymeric dispersant, and a solvent. The polymeric dispersant includes a perfluorocyclobutyl-containing polymer.
摘要翻译：用于形成燃料电池电极的油墨组合物包括催化剂组合物，聚合物粘合剂，聚合物分散剂和溶剂。聚合物分散剂包括含全氟环丁基的聚合物。

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