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1. 发明申请

US20070241689A1 Method and apparatus for extending equipment uptime in ion implantation 审中-公开
标题翻译：用于在离子注入中延长设备正常运行时间的方法和装置
公开(公告)号：US20070241689A1
公开(公告)日：2007-10-18
申请号：US11647898
申请日：2006-12-29
申请人： Thomas Horsky , Robert Milgate , George Sacco , Dale Jacobson , Wade Krull
发明人： Thomas Horsky , Robert Milgate , George Sacco , Dale Jacobson , Wade Krull
IPC分类号： H01J3/00
CPC分类号： H01J37/3171 , C23C14/48 , C23C14/564 , H01J9/38 , H01J27/02 , H01J27/024 , H01J37/08 , H01J2209/017 , H01J2237/006 , H01J2237/022 , Y10T137/0357 , Y10T137/7759 , Y10T137/776 , Y10T137/7761 , Y10T137/85954 , Y10T137/85978 , Y10T137/85986 , Y10T137/86002
摘要： The service lifetime of an ion source is enhanced or prolonged by the source having provisions for in-situ etch cleaning of the ion source and of an extraction electrode, using reactive halogen gases, and by having features that extend the service duration between cleanings. The latter include accurate vapor flow control, accurate focusing of the ion beam optics, and thermal control of the extraction electrode that prevents formation of deposits or prevents electrode destruction. An apparatus comprised of an ion source for generating dopant ions for semiconductor wafer processing is coupled to a remote plasma source which delivers F or Cl ions to the first ion source for the purpose of cleaning deposits in the first ion source and the extraction electrode. These methods and apparatus enable long equipment uptime when running condensable feed gases such as sublimated vapor sources, and are particularly applicable for use with so-called cold ion sources. Methods and apparatus are described which enable long equipment uptime when decaborane and octadecaborane are used as feed materials, as well as when vaporized elemental arsenic and phosphorus are used, and which serve to enhance beam stability during ion implantation.
摘要翻译：离子源的使用寿命通过源具有用于使用反应性卤素气体对离子源和引出电极进行原位蚀刻清洁以及具有延长清洁之间的使用持续时间的特征的源来增强或延长。后者包括准确的蒸汽流量控制，离子束光学的精确聚焦，以及防止沉积物形成或防止电极破坏的引出电极的热控制。包括用于产生用于半导体晶片处理的掺杂剂离子的离子源的装置耦合到远程等离子体源，其将F或Cl离子递送到第一离子源，以清除第一离子源和提取电极中的沉积物。这些方法和装置在运行诸如升华蒸汽源的可冷凝进料气体时能够延长设备正常运行时间，并且特别适用于所谓的冷离子源。描述了使用十硼烷和十八硼烷作为原料的长设备正常运行时间，以及当使用蒸发的元素砷和磷时，并且用于提高离子注入期间的束稳定性的方法和装置。

2. 发明申请

US20060272775A1 Method and apparatus for extracting ions from an ion source for use in ion implantation 有权
标题翻译：用于离子注入离子源提取离子的方法和装置
公开(公告)号：US20060272775A1
公开(公告)日：2006-12-07
申请号：US11452003
申请日：2006-06-12
申请人： Thomas Horsky , Robert Milgate , George Sacco , Dale Jacobson , Wade Krull
发明人： Thomas Horsky , Robert Milgate , George Sacco , Dale Jacobson , Wade Krull
IPC分类号： H01L21/306
CPC分类号： H01J37/08 , C23C14/48 , C23C14/564 , H01J9/38 , H01J27/024 , H01J37/3171 , H01J2209/017 , H01J2237/006 , H01J2237/022 , H01J2237/0812 , H01J2237/083 , H01J2237/31701 , H01L21/265
摘要： Thermal control is provided for an extraction electrode of an ion-beam producing system that prevents formation of deposits and unstable operation and enables use with ions produced from condensable vapors and with ion sources capable of cold and hot operation. Electrical heating of the extraction electrode is employed for extracting decaborane or octadecaborane ions. Active cooling during use with a hot ion source prevents electrode destruction, permitting the extraction electrode to be of heat-conductive and fluorine-resistant aluminum composition. The service lifetime of the system is enhanced by provisions for in-situ etch cleaning of the ion source and extraction electrode, using reactive halogen gases, and by having features that extend the service duration between cleanings, including accurate vapor flow control and accurate focusing of the ion beam optics. A remote plasma source delivers F or Cl ions to the de-energized ion source for the purpose of cleaning deposits in the ion source and the extraction electrode. These techniques enable long equipment uptime when running condensable feed gases such as sublimated vapors, and are particularly applicable for use with so-called cold ion sources and universal ion sources. Methods and apparatus are described which enable long equipment uptime when decaborane and octadecaborane are used as feed materials, as well as when vaporized elemental arsenic and phosphorus are used, and which serve to enhance beam stability during ion implantation.
摘要翻译：为离子束产生系统的提取电极提供热控制，其防止沉积物的形成和不稳定的操作，并且能够与可冷凝蒸气和能够冷热操作的离子源产生的离子一起使用。提取电极的电加热用于提取十硼烷或十八硼烷离子。使用热离子源时的主动冷却可防止电极破坏，从而使引出电极具有导热和防氟的铝组成。通过使用反应性卤素气体对离子源和引出电极进行原位蚀刻清洗，并且具有延长清洗之间的使用持续时间的特征，包括准确的蒸汽流量控制和精确的聚焦，增强了系统的使用寿命离子束光学。远程等离子体源将F或Cl离子输送到去激活离子源，以清除离子源和提取电极中的沉积物。这些技术使得在运行可冷凝的进料气体如升华蒸汽时长的设备正常运行时间，并且特别适用于所谓的冷离子源和通用离子源。描述了使用十硼烷和十八硼烷作为原料的长设备正常运行时间，以及当使用蒸发的元素砷和磷时，并且用于提高离子注入期间的束稳定性的方法和装置。

3. 发明申请

US20070108395A1 Method and apparatus for extracting ions from an ion source for use in ion implantation 审中-公开
标题翻译：用于离子注入离子源提取离子的方法和装置
公开(公告)号：US20070108395A1
公开(公告)日：2007-05-17
申请号：US11647719
申请日：2006-12-29
申请人： Thomas Horsky , Robert Milgate , George Sacco , Dale Jacobson , Wade Krull
发明人： Thomas Horsky , Robert Milgate , George Sacco , Dale Jacobson , Wade Krull
IPC分类号： B01D59/44
CPC分类号： H01J37/08 , C23C14/48 , C23C14/564 , H01J9/38 , H01J27/024 , H01J37/3171 , H01J2209/017 , H01J2237/006 , H01J2237/022 , H01J2237/0812 , H01J2237/083 , H01J2237/31701 , H01L21/265
摘要： Thermal control is provided for an extraction electrode of an ion-beam producing system that prevents formation of deposits and unstable operation and enables use with ions produced from condensable vapors and with ion sources capable of cold and hot operation. Electrical heating of the extraction electrode is employed for extracting decaborane or octadecaborane ions. Active cooling during use with a hot ion source prevents electrode destruction, permitting the extraction electrode to be of heat-conductive and fluorine-resistant aluminum composition. The service lifetime of the system is enhanced by provisions for in-situ etch cleaning of the ion source and extraction electrode, using reactive halogen gases, and by having features that extend the service duration between cleanings, including accurate vapor flow control and accurate focusing of the ion beam optics. A remote plasma source delivers F or Cl ions to the de-energized ion source for the purpose of cleaning deposits in the ion source and the extraction electrode. These techniques enable long equipment uptime when running condensable feed gases such as sublimated vapors, and are particularly applicable for use with so-called cold ion sources and universal ion sources. Methods and apparatus are described which enable long equipment uptime when decaborane and octadecaborane are used as feed materials, as well as when vaporized elemental arsenic and phosphorus are used, and which serve to enhance beam stability during ion implantation.
摘要翻译：为离子束产生系统的提取电极提供热控制，其防止沉积物的形成和不稳定的操作，并且能够与可冷凝蒸气和能够冷热操作的离子源产生的离子一起使用。提取电极的电加热用于提取十硼烷或十八硼烷离子。使用热离子源时的主动冷却可防止电极破坏，从而使引出电极具有导热和防氟的铝组成。通过使用反应性卤素气体对离子源和引出电极进行原位蚀刻清洗，并且具有延长清洗之间的使用持续时间的特征，包括准确的蒸汽流量控制和精确的聚焦，增强了系统的使用寿命离子束光学。远程等离子体源将F或Cl离子输送到去激活离子源，以清除离子源和提取电极中的沉积物。这些技术使得在运行可冷凝的进料气体如升华蒸汽时长的设备正常运行时间，并且特别适用于所谓的冷离子源和通用离子源。描述了使用十硼烷和十八硼烷作为原料的长设备正常运行时间，以及当使用蒸发的元素砷和磷时，并且用于提高离子注入期间的束稳定性的方法和装置。

4. 发明申请

US20060272776A1 Method and apparatus for extracting ions from an ion source for use in ion implantation 审中-公开
公开(公告)号：US20060272776A1
公开(公告)日：2006-12-07
申请号：US11502695
申请日：2006-08-11
申请人： Thomas Horsky , Robert Milgate , George Sacco , Dale Jacobson , Wade Krull
发明人： Thomas Horsky , Robert Milgate , George Sacco , Dale Jacobson , Wade Krull
IPC分类号： H01L21/306
CPC分类号： H01J37/08 , C23C14/48 , C23C14/564 , H01J9/38 , H01J27/024 , H01J37/3171 , H01J2209/017 , H01J2237/006 , H01J2237/022 , H01J2237/0812 , H01J2237/083 , H01J2237/31701 , H01L21/265
摘要： Thermal control is provided for an extraction electrode of an ion-beam producing system that prevents formation of deposits and unstable operation and enables use with ions produced from condensable vapors and with ion sources capable of cold and hot operation. Electrical heating of the extraction electrode is employed for extracting decaborane or octadecaborane ions. Active cooling during use with a hot ion source prevents electrode destruction, permitting the extraction electrode to be of heat-conductive and fluorine-resistant aluminum composition. The service lifetime of the system is enhanced by provisions for in-situ etch cleaning of the ion source and extraction electrode, using reactive halogen gases, and by having features that extend the service duration between cleanings, including accurate vapor flow control and accurate focusing of the ion beam optics. A remote plasma source delivers F or Cl ions to the de-energized ion source for the purpose of cleaning deposits in the ion source and the extraction electrode. These techniques enable long equipment uptime when running condensable feed gases such as sublimated vapors, and are particularly applicable for use with so-called cold ion sources and universal ion sources. Methods and apparatus are described which enable long equipment uptime when decaborane and octadecaborane are used as feed materials, as well as when vaporized elemental arsenic and phosphorus are used, and which serve to enhance beam stability during ion implantation.

5. 发明申请

US20070210260A1 Method And Apparatus For Extending Equipment Uptime In Ion Implantation 有权
标题翻译：用于延长设备的方法和设备在离子注入中的正常运行时间
公开(公告)号：US20070210260A1
公开(公告)日：2007-09-13
申请号：US10582392
申请日：2004-12-09
申请人： Thomas Horsky , Robert Milgate III , George Sacco Jr. , Dale Jacobson
发明人： Thomas Horsky , Robert Milgate III , George Sacco Jr. , Dale Jacobson
IPC分类号： H01J27/00 , H01J7/24
CPC分类号： H01J37/3171 , C23C14/48 , C23C14/564 , H01J9/38 , H01J27/02 , H01J27/024 , H01J37/08 , H01J2209/017 , H01J2237/006 , H01J2237/022 , Y10T137/0357 , Y10T137/7759 , Y10T137/776 , Y10T137/7761 , Y10T137/85954 , Y10T137/85978 , Y10T137/85986 , Y10T137/86002
摘要： The service lifetime of an ion source is enhanced or prolonged by the source having provisions for in-situ etch cleaning of the ion source and of an extraction electrode, using reactive halogen gases (F or Cl), and by having features that extend the service duration between cleanings. The latter include accurate vapor flow control, accurate focusing of the ion beam optics, and thermal control of the extraction electrode that prevents formation of deposits or prevents electrode destruction. An apparatus comprised of an ion source for generating dopant ions for semiconductor wafer processing is coupled to a remote plasma source which delivers F or Cl ions to the first ion source for the purpose of cleaning deposits in the first ion source and the extraction electrode. These methods and apparatus enable long equipment uptime when running condensable feed gases such as sublimated vapor sources, and are particularly applicable for use with so-called cold ion sources. Methods and apparatus are described which enable long equipment uptime when decaborane and octadecarborane are used as feed materials, as well as when vaporized elemental arsenic and phosphorus are used, and which serve to enhance beam stability during ion implantation.
摘要翻译：离子源的使用寿命通过源具有使用反应性卤素气体（F或Cl）对离子源和引出电极进行原位蚀刻清洁的规定而增强或延长，并且具有延长使用寿命的特征清洁之间的持续时间。后者包括准确的蒸汽流量控制，离子束光学的精确聚焦，以及防止沉积物形成或防止电极破坏的引出电极的热控制。包括用于产生用于半导体晶片处理的掺杂剂离子的离子源的装置耦合到远程等离子体源，其将F或Cl离子递送到第一离子源，以清除第一离子源和提取电极中的沉积物。这些方法和装置在运行诸如升华蒸汽源的可冷凝进料气体时能够延长设备正常运行时间，并且特别适用于所谓的冷离子源。描述了使用十硼烷和十八烷硼烷作为原料的长设备正常运行时间以及当使用蒸发的元素砷和磷时能够延长设备运行时间的方法和装置，并且其用于增强离子注入期间的束稳定性。

6. 发明申请

US20070105325A1 Method of manufacturing CMOS devices by the implantation of N- and P-type cluster ions 失效
公开(公告)号：US20070105325A1
公开(公告)日：2007-05-10
申请号：US11647922
申请日：2006-12-29
申请人： Thomas Horsky , Dale Jacobson , Wade Krull
发明人： Thomas Horsky , Dale Jacobson , Wade Krull
IPC分类号： H01L21/8238 , H01L21/336
CPC分类号： H01L21/823814 , H01J2237/31701 , H01L21/26513 , H01L21/26566 , H01L21/2658 , H01L21/425 , H01L21/823842
摘要： A method of manufacturing a semiconductor device is described, wherein clusters of N- and P-type dopants are implanted to form the transistor structures in CMOS devices. For example, As4Hx+clusters and either B10Hx− or B10Hx+ clusters are used as sources of As and B doping, respectively, during the implants. An ion implantation system is described for the implantation of cluster ions into semiconductor substrates for semiconductor device manufacturing. A method of producing higher-order cluster ions of As, P, and B is presented, and a novel electron-impact ion source is described which favors the formation of cluster ions of both positive and negative charge states. The use of cluster ion implantation, and even more so the implantation of negative cluster ions, can significantly reduce or eliminate wafer charging, thus increasing device yields. A method of manufacturing a semiconductor device is further described, comprising the steps of providing a supply of dopant atoms or molecules into an ionization chamber, combining the dopant atoms or molecules into clusters containing a plurality of dopant atoms, ionizing the dopant clusters into dopant cluster ions, extracting and accelerating the dopant cluster ions with an electric field, selecting the desired cluster ion by mass analysis, modifying the final implant energy of the cluster ion through post-analysis ion optics, and implanting the dopant cluster ions into a semiconductor substrate. In general, dopant clusters contain n dopant atoms where n can be 2, 3, 4 or any integer number. This method provides the advantages of increasing the dopant dose rate to n times the implantation current with an equivalent per dopant atom energy of 1/n times the cluster implantation energy. This is an effective method for making shallow transistor junctions, where it is desired to implant with a low energy per dopant atom.

7. 发明申请

US20070194252A1 Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions 失效
标题翻译：离子注入装置和通过注入硼氢化物簇离子进行半导体制造的方法
公开(公告)号：US20070194252A1
公开(公告)日：2007-08-23
申请号：US11647867
申请日：2006-12-29
申请人： Thomas Horsky , Dale Jacobson
发明人： Thomas Horsky , Dale Jacobson
IPC分类号： H01J37/08
CPC分类号： H01L21/26513 , H01J37/08 , H01J37/3171 , H01J37/3172 , H01L21/26566 , H01L21/2658 , H01L29/6659
摘要： An ion implantation device and a method of manufacturing a semiconductor device is described, wherein ionized boron hydride molecular clusters are implanted to form P-type transistor structures. The molecular cluster ions have the chemical form BnHx+and BnHx−, where 10
摘要翻译：描述了离子注入装置和制造半导体器件的方法，其中注入离子化硼氢化物分子簇以形成P型晶体管结构。分子簇离子具有以下化学形式：其中10为H x H

8. 发明申请

US20070181830A1 Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions 审中-公开
标题翻译：离子注入装置和通过注入硼氢化物簇离子进行半导体制造的方法
公开(公告)号：US20070181830A1
公开(公告)日：2007-08-09
申请号：US11648091
申请日：2006-12-29
申请人： Thomas Horsky , Dale Jacobson
发明人： Thomas Horsky , Dale Jacobson
IPC分类号： H01J37/08
CPC分类号： H01L21/26513 , H01J27/20 , H01J37/08 , H01J37/3171 , H01J2237/061 , H01J2237/082 , H01J2237/304 , H01L21/2658 , H01L21/3215 , H01L21/67213 , H01L21/823814 , H01L21/823842 , H01L27/092 , H01L29/66575
摘要： An ion implantation device and a method of manufacturing a semiconductor device is described, wherein ionized boron hydride molecular clusters are implanted to form P-type transistor structures. The molecular cluster ions have the chemical form BnHx+ and BnHx−, where 10
摘要翻译：描述了离子注入装置和制造半导体器件的方法，其中注入离子化硼氢化物分子簇以形成P型晶体管结构。分子簇离子具有以下化学形式：其中10为H x H

9. 发明申请

US20060097193A1 Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions 有权
标题翻译：离子注入装置和通过注入硼氢化物簇离子进行半导体制造的方法
公开(公告)号：US20060097193A1
公开(公告)日：2006-05-11
申请号：US10519699
申请日：2003-06-26
申请人： Thomas Horsky , Dale Jacobson
发明人： Thomas Horsky , Dale Jacobson
IPC分类号： A61N5/00
CPC分类号： H01L21/26513 , H01J37/08 , H01J37/3171 , H01J37/3172 , H01L21/26566 , H01L21/2658 , H01L29/6659
摘要： An ion implantation device and a method of manufacturing a semiconductor device is described, wherein ionized boron hydride molecular clusters are implanted to form P-type transistor structures. For example, in the fabrication of Complementary Metal-Oxide Semiconductor (CMOS) devices, the clusters are implanted to provide P-type doping for Source and Drain structures and for Polygates; these doping steps are critical to the formation of PMOS transistors. The molecular cluster ions have the chemical form BnHx+ and BnHx− where 10
摘要翻译：描述了离子注入装置和制造半导体器件的方法，其中注入离子化硼氢化物分子簇以形成P型晶体管结构。例如，在互补金属氧化物半导体（CMOS）器件的制造中，植入簇以提供用于源极和漏极结构的P型掺杂以及对于多栅极; 这些掺杂步骤对于PMOS晶体管的形成至关重要。分子簇离子具有以下化学形式：B H H + / SUB> ^{- 其中10}

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