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    • 9. 发明授权
    • Stacked thin-film superlattice thermoelectric devices
    • 堆叠薄膜超晶格热电装置
    • US08710348B2
    • 2014-04-29
    • US12288560
    • 2008-10-21
    • Dirk N. WeissThomas D. RadcliffRhonda R. Willigan
    • Dirk N. WeissThomas D. RadcliffRhonda R. Willigan
    • H01L35/16
    • H01L35/26H01L35/32
    • A thermoelectric device (31) includes a plurality of alternating p-type and n-type semiconductor thermoelectric elements (32, 34, 36; 33, 35 37) the elements (32-37) being separated by electrically and thermally conductive interconnects (40-45), alternating interconnects (40-44) extending in an opposite direction from interconnects (41-45) interspersed therewith. Each thin-film element comprises several hundred thermoelectric alloy A superlattice thin-films interspersed with several hundred thermoelectric alloy B superlattice thin-films, the thin-film elements being between 5 and 25 microns thick and preferably over 10 microns thick. The thin-film elements may be interspersed with opposite type thin-film elements or with opposite type bulk elements (33a, 34a). The interconnects are preferably joined to the elements by diffusion bonding.
    • 热电装置(31)包括多个交替的p型和n型半导体热电元件(32,34,36; 33,35 37),所述元件(32-37)由导电和导热互连(40 -45),交替互连(40-44),其沿与其散布的互连(41-45)相反的方向延伸。 每个薄膜元件包括散布有数百个热电合金B超晶格薄膜的数百个热电合金A超晶格薄膜,薄膜元件的厚度为5至25微米,优选超过10微米厚。 薄膜元件可以散布相对的薄膜元件或相对的体积元件(33a,34a)。 互连优选通过扩散接合连接到元件。
    • 10. 发明申请
    • Stacked thin-film superlattice thermoelectric devices
    • 堆叠薄膜超晶格热电装置
    • US20100095997A1
    • 2010-04-22
    • US12288560
    • 2008-10-21
    • Dirk N. WeissThomas D. RadcliffRhonda R. Willigan
    • Dirk N. WeissThomas D. RadcliffRhonda R. Willigan
    • H01L35/16
    • H01L35/26H01L35/32
    • A thermoelectric device (31) includes a plurality of alternating p-type and n-type semiconductor thermoelectric elements (32, 34, 36; 33, 35 37) the elements (32-37) being separated by electrically and thermally conductive interconnects (40-45), alternating interconnects (40-44) extending in an opposite direction from interconnects (41-45) interspersed therewith. Each thin-film element comprises several hundred thermoelectric alloy A superlattice thin-films interspersed with several hundred thermoelectric alloy B superlattice thin-films, the thin-film elements being between 5 and 25 microns thick and preferably over 10 microns thick. The thin-film elements may be interspersed with opposite type thin-film elements or with opposite type bulk elements (33a, 34a). The interconnects are preferably joined to the elements by diffusion bonding.
    • 热电装置(31)包括多个交替的p型和n型半导体热电元件(32,34,36; 33,35 37),所述元件(32-37)由导电和导热互连(40 -45),交替互连(40-44),其沿与其散布的互连(41-45)相反的方向延伸。 每个薄膜元件包括散布有数百个热电合金B超晶格薄膜的数百个热电合金A超晶格薄膜,薄膜元件的厚度为5至25微米,优选超过10微米厚。 薄膜元件可以散布相对的薄膜元件或相对的体积元件(33a,34a)。 互连优选通过扩散接合连接到元件。