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    • 4. 发明授权
    • Method for applying a protective coating to a high-intensity metal
halide discharge lamp
    • 将保护涂层施加到高强度金属卤化物放电灯的方法
    • US5098326A
    • 1992-03-24
    • US627110
    • 1990-12-13
    • Thomas GorczycaHarald L. Witting
    • Thomas GorczycaHarald L. Witting
    • H01J9/20
    • H01J9/20
    • A method for applying a protective coating to the inner surface of the arc tube of a high-intensity metal halide discharge lamp involves dosing the arc tube with an inert gas that is doped with a metal hydride gas. Preferably, the metal hydride gas comprises silane. The arc tube is heated to a sufficiently high temperature to decompose the silane gas. As a result, silicon is deposited as a protective coating on the inner surface of the arc tube wall. The hydrogen gas that is generated by the silane decomposition is removed from the system either by pumping it out before dosing the arc tube with the final arc tube fill, or by diffusion through the arc tube wall during operation of the lamp.
    • 将保护涂层施加到高强度金属卤化物放电灯的电弧管的内表面的方法包括用掺杂有金属氢化物气体的惰性气体对电弧管进行计量。 优选地,金属氢化物气体包括硅烷。 将电弧管加热到足够高的温度以分解硅烷气体。 结果,将硅作为保护涂层沉积在电弧管壁的内表面上。 通过硅烷分解产生的氢气可以通过在用最终的电弧管填充给电弧管配料之前将其泵出,或者在灯的操作期间通过电弧管壁的扩散而从系统中除去。
    • 7. 发明申请
    • Electronic System With Lead Free Interconnections And Method of Fabrication
    • 无铅互连电子系统及其制造方法
    • US20080116552A1
    • 2008-05-22
    • US11560867
    • 2006-11-17
    • James RoseRobert LewandowskiThomas GorczycaKevin DurocherJonathan ShortDonna Sherman
    • James RoseRobert LewandowskiThomas GorczycaKevin DurocherJonathan ShortDonna Sherman
    • H01L23/02
    • H05K3/361H01L2224/16225H01L2224/32225H01L2224/73204H05K3/244H05K3/305H05K3/328H05K2201/10734H05K2201/10977H05K2203/0495H01L2924/00
    • An electronic system (1) having an interconnect structure (30, 45). In one embodiment a system (1) includes a first electronic device (2) with a first plurality of contact pads (15) each having a noble metal (18) formed along a first surface (19), and a second electronic device (3) with a second plurality of contact pads (29) each having a noble metal (18) formed along a first surface (19). The noble metal (18) of one of the contact pads (15) of the first device (2) is bonded to the noble metal (18) of one of the contact pads (29) of the second device (3). In one embodiment of an associated method of forming an interconnect structure (45), a first electronic device (2) is provided with a first plurality of contact pads (15) each having a noble metal (18) along a first surface (19), and a second electronic device (3) is provided with a plurality of contact pads (29) each having a noble metal (18) along a first surface (19). One or more of the contact pads (15) on the first device (2) is aligned with one or more of the contact pads (29) on the second device (3) to form pairs of pads (45) for electrical contact with one another. The first surface (19) of a contact pad (15) of the first device (2) is pressed against the first surface (19) of a contact pad (29) on the second device (3) to make contact between the two first surfaces (19).
    • 一种具有互连结构(30,45)的电子系统(1)。 在一个实施例中,系统(1)包括具有第一多个接触焊盘(15)的第一电子设备(2),每个接触焊盘具有沿着第一表面(19)形成的贵金属(18)和第二电子设备(3) )与具有沿着第一表面(19)形成的贵金属(18)的第二多个接触焊盘(29)连接。 第一装置(2)的接触焊盘(15)之一的贵金属(18)被接合到第二装置(3)的接触焊盘(29)之一的贵金属(18)上。 在形成互连结构(45)的相关联的方法的一个实施例中,第一电子器件(2)设置有第一多个接触焊盘(15),每个接触焊盘沿着第一表面(19)具有贵金属(18) ,并且第二电子设备(3)设置有多个接触焊盘(29),每个接触焊盘(29)沿着第一表面(19)具有贵金属(18)。 第一装置(2)上的接触焊盘(15)中的一个或多个与第二装置(3)上的一个或多个接触焊盘(29)对准以形成一对焊盘(45),用于与一个 另一个。 第一装置(2)的接触垫(15)的第一表面(19)被压靠在第二装置(3)上的接触垫(29)的第一表面(19)上,以使第一装置 表面(19)。