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    • 1. 发明授权
    • Porous silicon light emitting diode arrays and method of fabrication
    • 多孔硅发光二极管阵列及其制造方法
    • US5510633A
    • 1996-04-23
    • US257247
    • 1994-06-08
    • Thomas E. OrlowskiSophie V. Vandebroek
    • Thomas E. OrlowskiSophie V. Vandebroek
    • B41J2/44B41J2/45B41J2/455H01L27/15H01L33/00
    • H01L27/15Y10S438/96
    • A porous silicon Light Emitting Diodes (LEDs) device and method for fabricating LEDs with supporting circuits on a silicon chip or wafer for a Full Width Array in which a switch diode structure is used to form the porous silicon LED element and later drives the LED after the LED is fabricated. The LED is formed by defining an area in the switch diode for placing an LED element. Epi silicon is deposited in the defined area; and the epi silicon is electrochemical etched to produce porous silicon. This procedure creates column-like Si structures of nanometer dimension which can efficiently emit visible to infrared light at room temperature. Next, the porous silicon LED chip can be cut and butted without excessive damage. In this way, the chips bearing both LEDs and drive circuitry are made of silicon and can be cut and accurately butted by known techniques to form a low cost, high resolution Full Width LED array.
    • 一种多孔硅发光二极管(LED)器件及其制造方法,用于在全芯片或硅片上制造具有支撑电路的LED,其中开关二极管结构用于形成多孔硅LED元件,并随后驱动LED LED被制造。 LED通过在开关二极管中限定用于放置LED元件的区域而形成。 Epi硅沉积在限定区域内; 并且epi硅被电化学蚀刻以产生多孔硅。 该过程产生纳米尺寸的柱状Si结构,其可以在室温下有效地发射出可见的红外光。 接下来,可以切割和对接多孔硅LED芯片而不会过度损坏。 以这种方式,承载LED和驱动电路的芯片由硅制成,并且可以通过已知技术被切割并精确地对接以形成低成本,高分辨率的全宽度LED阵列。
    • 2. 发明授权
    • Method of fabrication of porous silicon light emitting diode arrays
    • 多孔硅发光二极管阵列的制造方法
    • US5552328A
    • 1996-09-03
    • US463162
    • 1995-06-05
    • Thomas E. OrlowskiSophie V. Vandebroek
    • Thomas E. OrlowskiSophie V. Vandebroek
    • B41J2/44B41J2/45B41J2/455H01L27/15H01L33/00H01L21/3063H01L21/77
    • H01L27/15Y10S438/96
    • A porous silicon Light Emitting Diodes (LEDs) device and method for fabricating LEDs with supporting circuits on a silicon chip or wafer for a Full Width Array in which a switch diode structure is used to form the porous silicon LED element and later drives the LED after the LED is fabricated. The LED is formed by defining an area in the switch diode for placing an LED element. Epi silicon is deposited in the defined area; and the epi silicon is electrochemical etched to produce porous silicon. This procedure creates column-like Si structures of nanometer dimension which can efficiently emit visible to infrared light at room temperature. Next, the porous silicon LED chip can be cut and butted without excessive damage. In this way, the chips bearing both LEDs and drive circuitry are made of silicon and can be cut and accurately butted by known techniques to form a low cost, high resolution Full Width LED array.
    • 一种多孔硅发光二极管(LED)器件及其制造方法,用于在全芯片或硅片上制造具有支撑电路的LED,其中开关二极管结构用于形成多孔硅LED元件,并随后驱动LED LED被制造。 LED通过在开关二极管中限定用于放置LED元件的区域而形成。 Epi硅沉积在限定区域内; 并且epi硅被电化学蚀刻以产生多孔硅。 该过程产生纳米尺寸的柱状Si结构,其可以在室温下有效地发射出可见的红外光。 接下来,可以切割和对接多孔硅LED芯片而不会过度损坏。 以这种方式,承载LED和驱动电路的芯片由硅制成,并且可以通过已知技术被切割并精确地对接以形成低成本,高分辨率的全宽度LED阵列。
    • 10. 发明授权
    • Synchronized process for catalysis of electroless metal plating on
plastic
    • 塑料上化学镀金的同步方法
    • US5462773A
    • 1995-10-31
    • US996990
    • 1992-12-28
    • Joseph A. SwiftThomas E. Orlowski
    • Joseph A. SwiftThomas E. Orlowski
    • C08J7/04C23C18/16C23C18/20C23C18/30H05K3/18B05D1/18
    • C23C18/1608C23C18/1612C23C18/204C23C18/206C23C18/30C23C18/405H05K3/185H05K2201/0129H05K2203/107
    • A method of forming at least one electrically conductive path in a thermoplastic substrate having a melting point below 325.degree. C., by synchronously depositing on the substrate in the predetermined pattern of said conductive path from an atomized stream of a precursor of a catalyst for the electroless deposition of conductive metals and locally heating the deposited precursor in the pattern corresponding to the conductive path, the catalyst precursor having a decomposition temperature below the melting point of the thermoplastic and within the temperature range where the thermoplastic softens, heating the portion of the thermoplastic substrate corresponding to said conductive path to a temperature sufficient to decompose said catalyst precursor to the catalyst and soften the thermoplastic; said substrate, catalyst precursor and temperature being selected such that on heating to the temperature the precursor decomposes to the catalyst, the thermoplastic softens and at least partially melts without substantial decomposition to enable the catalyst to penetrate the surface of the thermoplastic and become anchored thereto to provide nucleation sites for the subsequent electroless deposition of conductive metal and depositing conductive metal by electroless deposition on the heated portion to form the conductive path.
    • 一种在具有低于325℃的熔点的热塑性基材中形成至少一个导电路径的方法,通过以所述导电路径的预定图案从所述导电路径的预定图案中的雾化流同步沉积在用于 导电金属的无电沉积并且以对应于导电路径的图案局部加热沉积的前体,催化剂前体具有低于热塑性塑料的熔点的分解温度,并且在热塑性软化的温度范围内,加热热塑性塑料的一部分 对应于所述导电路径的衬底至足以将所述催化剂前体分解成催化剂并软化热塑性塑料的温度; 所述衬底,催化剂前体和温度被选择为使得在加热到前体分解为催化剂的温度下,热塑性软化并且至少部分地熔融而没有实质的分解,使得催化剂能够穿透热塑性塑料的表面并被锚定到 提供成核位置用于随后的导电金属的无电沉积并通过无电沉积沉积导电金属在加热部分上以形成导电路径。